C5886
Contextual Info: 2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) •
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c5886
Abstract: transistor c5886 2SC5886
Contextual Info: 2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) •
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transistor c5886
Abstract: c5886 c5886 transistor 2SC5886
Contextual Info: 2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) •
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C5886
Abstract: 2SC5886
Contextual Info: 2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A · Low collector-emitter saturation: VCE (sat) = 0.22 V (max) · High-speed switching: tf = 55 ns (typ.)
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transistor c5886
Contextual Info: 2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) •
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C5886
Abstract: transistor c5886 c5886 transistor
Contextual Info: 2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) •
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c5886
Abstract: 2SC5886
Contextual Info: 2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) •
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c5886
Abstract: 2SC5886 transistor c5886
Contextual Info: 2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) •
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C5802
Abstract: c1226a modern china tv 8893 circuit diagram c5888 Reducing sleeve, AWG 16-20 8741 substitution
Contextual Info: What’s New? E X PA N D E D C O M P E T I T I V E O F F E R I N G S Cross-Reference & Online Spec Sheets We have expanded our Carol Brand Electronics offering and now have more competitive crosses than anyone. Many of these cables are in stock and ready for
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e3842se3843seo24c0045510eo26c0045510+12eo28c0045510eo28p0181510eo28p0501510eo30c0045510sp00c0011010sp00c0012010c5802c1226amodern china tv 8893 circuit diagramc5888reducing sleeve, awg 16-208741 substitution
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transistor c3150
Abstract: c3271 KEMA KEUR thermostat C4108
Contextual Info: What’s New? E X PA N D E D C O M P E T I T I V E O F F E R I N G S Cross-Reference & Online Spec Sheets We have expanded our Carol Brand Electronics offering and now have more competitive crosses than anyone. Many of these cables are in stock and ready for
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e3842se3843seo24c0045510eo26c0045510+10eo28c0045510eo28p0181510eo28p0501510eo30c0045510sp00c0011010sp00c0012010transistor c3150c3271kema keur thermostatc4108
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GT30F131
Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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sce0004lttc41162sc4118tta1586+162sa15882sc41172sa15872sc52332sc47382sa1832gt30f131gt30f124tk18a60vsmd m5 transistor 6-pinsmd transistor h2a npngt50n322marking smd pnp transistor h2agt30j12430f124tpcp8r01
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transistor bc 245
Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243
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sc-432sc1815tps615tps616+11tps610transistor bc 245247ysmd transistor h2agt30g122gt35j321gt45f123marking smd pnp transistor h2agt45f122gt45f122 seriesgt30f122
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schematic diagram online UPS
Abstract: data circuit schematics satellite connector 3026C VHDCI Connector 2G 3020 450 3021C A 3020 AM MODULATion C6325 IQ vector generator MHZ
Contextual Info: 3020A, 3020C, 3021C, 3025, 3025C, 3026C 3020 Series Digital RF Signal Generator PXI Modules User Manual Document no. 46892/834 Issue 5 23 November 2009 About this manual This manual explains how to set up and configure an Aeroflex 3020A, 3020C, 3021C, 3025,
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3020c3021c3025c3026c+8schematic diagram online upsdata circuit schematics satellite connectorvhdci connector2g 3020 450a 3020am modulationc6325iq vector generator mhz
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GT30J124
Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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sce0004isc-432sc1815gt30j124+9smd transistor h2agt45f122tpcp8r01gt30f1232sc1815 smd typesmd marking 8l01h2a smd2sc54712sc5200 amplifiers circuit diagram
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GT45F122
Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ
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scj0004osc-432sc18152sc732tm+142sc19592sa10152sc22402sa970gt45f122tk13a60ugt30f1232sk4207gt30j124igbt gt30f123gt30f122gt30g1222sc5471igbt gt30j124
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*45F122
Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322
Contextual Info: 東芝半導体製品総覧表 2010 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ
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scj0004osc-432sc18152sc732tm+142sc19592sa10152sc22402sa97045f122gt30f12430g12230f124igbt gt30f124gt30j124gt45f122gt30f123tpca*8023gt50n322
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