c328 transistor
Abstract: BV 724 C C328 ASI10810 C3-28
Contextual Info: C3-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L STUD The C3-28 is Designed for Class A, B and C Power Amplifier Applications Up to 500 MHz. A 45° C E E B FEATURES: B • PG = 13 dB Typ. at 3.0 W/400 MHz • Emitter Ballasting for Ruggedness
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c3-28asi10810c328 transistorbv 724 c+1c328
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C 32725
Abstract: BC327 C327 C327 C 327-25 C327 PNP BC327B c328 bc328c
Contextual Info: BC327,-16,-25 BC328,-16,-25 MAXIMUM RATINGS Rating S ym bol BC 327 VCEO -4 5 C o lle c to r-B a s e V o lta g e VCBO - 50 E m itte r-B a s e V o lta g e V £B O - 5.0 V dc >C -8 0 0 m Adc PD 625 5.0 C o lle c to r-E m itte r V o lta g e C o lle c to r C u rre n t —
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bc327bc328o-226aac 32725+7bc327 c327c327c 327-25c327 pnpbc327bc328bc328c
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c328 transistor
Abstract: C327 IRGPC40M C327 - 25
Contextual Info: Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1078 IRGPC40M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses
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irgpc40m10khzo-247acc-328+3c328 transistorc327c327 - 25
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C327
Abstract: c328 transistor C328 IRGPC40M
Contextual Info: Preliminary Data Sheet PD - 9.1078 IRGPC40M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to
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irgpc40m10khzo-247acc-328+3c327c328 transistorc328
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C327
Abstract: c328 transistor
Contextual Info: International ËüRectifier Preliminary Data Sheet P D - 9.1078 IRGPC40M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10ps @ 125°C, V ge = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to
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irgpc40m10khzo-247acc-328+4ma5545e00h0116c327c328 transistor
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c328 transistor
Abstract: IRGPC40M C328 C327
Contextual Info: Preliminary Data Sheet PD - 9.1078 IRGPC40M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to
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irgpc40m10khzdevices75o-247ac+4c-328c328 transistorc328c327
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c328 transistor
Abstract: C327
Contextual Info: International i r]Rectifier Preliminary Data Sheet PD - 9.1078 IRGPC40M Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10ms @ 125°C, V qe = 15V • Switching-ioss rating includes all ’tail" losses • Optimized for medium operating frequency 1 to
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10khzirgpc40mo-247acc-328+2c328 transistorc327
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32xe
Contextual Info: 28-Lead ROM-Based DSP Motor Controller ADMC328 ANALOG DEVICES Preliminary Technical Data TARGET APPLICATIONS Washing Machines, Refrigerator Compressors, Fans, Pumps, Industrial V ariable Speed Drives FEATURES 20 MIPS Fixed-Point DSP Core Single Cycle Instruction Execution 50 ns
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adsp-210024-bit16-bit28-lead+132xe
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three phase motor control schematics diagrams
Abstract: control of three phase induction motor ECM 2.3 Motor PWM PWM AMPLIFIER applications ADMC328 ADSP-2100 ADSP-2171 1rfs
Contextual Info: ANALOG D E V IC E S 28-Lead ROM-Based DSP Motor Controller with Current Sense ADMC328 TARGET APPLICATIONS Washing Machines, Refrigerator Compressors, Fans, Pumps, Industrial V ariable Speed Drives MOTOR TYPES AC Induction ACIM Permanent M agnet Synchronous M otors (PMSM)
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28-leadadmc328adsp-21xx24-bit+7three phase motor control schematics diagramscontrol of three phase induction motorecm 2.3 motor pwmpwm amplifier applicationsadsp-2100adsp-21711rfs
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C735
Abstract: C749 NPN C460 C644 BS9300 c495 C-725 CV7580 c496 c727
Contextual Info: 7 BS9000 Converted CV Case Outlines Small Signal Transistors . B S Type Number Com m ercial Equivalent Case Outline Polarity Ab solute Maximum Rating VCB V VCE V h F E at Co llecto r Current VEB V hFE min. hFE max. 1C mA M in. fT MHz Com m ents 0-76 0 -4 8 0
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bs90008s9300bs93002n2221a+122n2222a2n18932n1613c735c749npn c460c644c495c-725cv7580c496c727
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1RF9510
Abstract: IRF9513 IRF9511 c328 diode IRF9510
Contextual Info: HE 0 I <4555452 OOaâS7b 1 | Data Sheet No. PD-9.390C T INTERNATIONAL RECTIFIER > INTERNATIONAL RECTIFIER * 7 ^ o f TOR HEXFET TRANSISTORS IRF9 5 1 0 IRF9 5 1 1 P-CHANNEL 1 0 0 VOLT IRFSS1 S POWER MOSFETs IRF9 5 1 3 -100 Volt, 1.2 Ohm HEXFET T0-220AB Plastic Package
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t0-220abc-329irf9510irf9511+7irf9512irf9513ms554s2t-39-09c-3301rf9510c328 diode
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C495 transistor
Abstract: BF194 2N4996 BF194 equivalent BF195 bf357 BF597 BF195 equivalent BF594 transistor c495
Contextual Info: Silect High Frequency Transistors Maximum Ratings Device Type Case outline B V PTOT in brackets CBO ic S j o < hFE Ic BF594 (9) V V mA mW 30 20 30 250 V 1 10 BF595 (9) 30 20 30 250 35 BF597 (9) 40 25 30 360 38 2N4996 (2) T1S02A (2) 30 30 18 50 12 30 250
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bf594bf194bf595bf195+10bf597bf1972n4996bs93002n2219ac495 transistorbf194 equivalentbf357bf195 equivalenttransistor c495
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bc657
Abstract: BC566 BC659 BC159 BC463 BCX36 BCY34A BC167 BC462 transistor bc668
Contextual Info: Transistors P-N-P silicon lo w /m ed iu m pow er transistors book 1 parts 1 and 2 Type No. 1 3 o e ! VcBO V ce.0 V (V) M axim um Ratings ' cm Ic <AV) (m AJ Tj P«ot (m A) a t 2 5 °C <°C) (mW) 200 200 50 200 3 60 100 125 3 50 h FE m in. m ax. at le (m A)
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bcy70bcy71bcy72bfx37+13bc167ot-25kbc158bc15915khzbc657bc566bc659bc463bcx36bcy34abc462 transistorbc668
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NPN C460
Abstract: 2N2907 equivalent c496 2N2906 equivalent 2N2905 equivalent 2n2484 complementary 2N2907 t018 C735 BS9300 CV7496
Contextual Info: Metal Can Complementary Pairs Core Drivers | Polarity Maximum ratin ps 2N 3724A 2N 372 5A NPN N PN T039 T0 3 9 50 80 30 50 6 6 1200 1200 100 100 60 60 150 150 1500 1500 25 20 — - 300 300 100 100 0.20 0.26 2N 3244 PN P T0 3 9 40 40 5 1000 500 50 150 750 25
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2n3724a2n3725a2n3244bf257+13bs93002n2219a2n22212n2222npn c4602n2907 equivalentc4962n2906 equivalent2n2905 equivalent2n2484 complementary2n2907 t018c735cv7496
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NPN pnp MATCHED PAIRS 2n2905A 2N2219A
Abstract: BFR39 BFR80 BFR40 BS9300 BFR81 BC326 BFR79 TIS90 BFR62
Contextual Info: Silect Polarity General Purpose Transistors — Ic up to 800 mA Case Outlines Device Type case outline in brackets 2N3702 2N3703 2N3704 2N3705 2N3706 (1) (1) (1) (1) (1) TIS90 (1) TIS91 (1) PTOT Maximum ratings CEO V Cont IC A pk IC A Free Air @ 25‘C mW
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bs93652n40362n4037bs3365+122n40302n4031npn pnp matched pairs 2n2905a 2n2219abfr39bfr80bfr40bs9300bfr81bc326bfr79tis90bfr62
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C495 transistor
Abstract: transistor c495 C735 c495 bc300 equivalent NPN C460 BFY50 equivalent u c756 2n-2411 2n1613 equivalent
Contextual Info: 7 Metal Can High Current NPN Am plifiers Case Outlines Maximum ratinas Device Type ¡5 o £L BV Case BV BV hFEI CBO CEO EBO ICM mA V V V hFE2 1C Ic mA min. max. mA BFT39 BFT40 BFT41 NPN NPN NPN T039 T039 T039 90 70 60 80 60 50 5 5 5 1000 1000 1000 100 50 100 75
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bft39bft40bft41bft29+16bft30bft31bfy50bfy51bfy52bft53c495 transistortransistor c495c735c495bc300 equivalentnpn c460bfy50 equivalentu c7562n-24112n1613 equivalent
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C495 transistor
Abstract: c735 2N1893 equivalent c644 C735 O 2N2222 hfe C749 2N3570 transistor C633 NPN C460
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *T t i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450
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4-95j02n35702n35712n3572+142n9182n42522n4253bs93002n2219ac495 transistorc7352n1893 equivalentc644c735 o2n2222 hfec749transistor c633npn c460
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C495 transistor
Abstract: c638 transistor EQUIVALENT TRANSISTOR bc108 C756 TRANSISTOR PNP Transistor 2N2222 equivalent C735 transistor c637 transistor transistor c495 TRANSISTOR bc107 current gain c372 transistor
Contextual Info: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a small extra
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bcw35gpbs93002n2219a2n2221+132n22222n2221aft018c495 transistorc638 transistorequivalent transistor bc108c756 transistorpnp transistor 2n2222 equivalentc735 transistorc637 transistortransistor c495transistor bc107 current gainc372 transistor
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MMA0204-50
Abstract: Zener C444 MMA-0204-50 C343 "zener diode" zener c346 C406 Zener BUF C221 diode c446 c343 diode motorola D402 user guide
Contextual Info: Application Report SLEA032 - MARCH 2004 TAS5066-5121K6EVM Application Report Jonas Svendsen Digital Audio & Video Products The TAS5066-5121K6EVM PurePath Digital customer evaluation module demonstrates two integrated circuits TAS5066 and TAS5121DKD from Texas Instruments TI .
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slea032tas5066-5121k6evmtas5066tas5121dkd+1224-bit192khzmma0204-50zener c444mma-0204-50c343 "zener diodezener c346c406 zenerbuf c221diode c446c343 diodemotorola d402 user guide
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C736
Abstract: C495 transistor bc303 equivalent 2N2222A 026 C735 bc143 equivalent bc143 C644 equivalent transistor 2N1711 transistor c633
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450
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4-95j02n35702n35712n3572+152n9182n42522n4253bs93002n2219ac736c495 transistorbc303 equivalent2n2222a 026c735bc143 equivalentbc143c644equivalent transistor 2n1711transistor c633
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DIODE SMD v105
Abstract: DIODE SMD c336 smd V105 TP218 transistor 27C202 TCO-987 C219-33 diode V105 L-286 C345 plastic transistor
Contextual Info: INTEGRATED CIRCUITS DATA SHEET SAA1575HL Global Positioning System GPS baseband processor Product specification Supersedes data of 1999 May 17 File under Integrated Circuits, IC18 1999 Jun 04 Philips Semiconductors Product specification Global Positioning System (GPS)
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saa1575hl80c51xa285002/02/pp56diode smd v105+9diode smd c336smd v105tp218 transistor27c202tco-987c219-33diode v105l-286c345 plastic transistor
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smd code A9 3 pin transistor
Abstract: EL 817 c334 transistor SMD MARKING CODE 772 smd transistor marking code D13 LM317T voltage regulator 1n4007 smd diode R-20610 DIODE SMD v105 varactor smd BPF302
Contextual Info: INTEGRATED CIRCUITS DATA SHEET SAA1575HL Global Positioning System GPS baseband processor Product specification Supersedes data of 1999 May 17 File under Integrated Circuits, IC18 1999 Jun 04 Philips Semiconductors Product specification Global Positioning System (GPS)
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saa1575hl80c51xasaa1575hl/v2saa1575hlbe+11ot407smd code a9 3 pin transistorel 817 c334transistor smd marking code 772smd transistor marking code d13lm317t voltage regulator1n4007 smd dioder-20610diode smd v105varactor smdbpf302
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TRANSISTOR SMD K23
Abstract: C345 plastic transistor TP218 transistor SMD transistor k23 C219-33 DIODE SMD v105 EL 817 c321 MHB320 varactor V104 C318 transistor
Contextual Info: INTEGRATED CIRCUITS DATA SHEET UAA1570HL Global Positioning System GPS front-end receiver circuit Product specification File under Integrated Circuits, IC18 1999 May 10 Philips Semiconductors Product specification Global Positioning System (GPS) front-end
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uaa1570hl285002/00/01/pp76transistor smd k23c345 plastic transistor+8tp218 transistorsmd transistor k23c219-33diode smd v105el 817 c321mhb320varactor v104c318 transistor
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TRANSISTOR SMD K23
Abstract: EL 817 c321 C345 plastic transistor varactor diode V101 SMD transistor k23 Solid Tantalum Surface Mount Capacitors C106 mark varactor V104 TP218 transistor J201 spice model equivalent transistor LM317T
Contextual Info: INTEGRATED CIRCUITS DATA SHEET UAA1570HL Global Positioning System GPS front-end receiver circuit Product specification File under Integrated Circuits, IC18 1999 May 10 Philips Semiconductors Product specification Global Positioning System (GPS) front-end
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uaa1570hl10-may-99transistor smd k23el 817 c321+8c345 plastic transistorvaractor diode v101smd transistor k23solid tantalum surface mount capacitors c106 markvaractor v104tp218 transistorj201 spice modelequivalent transistor lm317t
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