BY299 DIODES Search Results

by299

Abstract: 8002A BY299 Diodes
Contextual Info: BY296 . BY299 BY296 . BY299 Fast Silicon Rectifier Diodes – Schnelle Silizium-Gleichrichterdioden Version 2012-10-04 Nominal current Nennstrom 7.5±0.1 Type 62.5 ±0.5 Ø 4.5+0.1 -0.3 Ø 1.2±0.05 Dimensions - Maße [mm] 2A Repetitive peak reverse voltage

BY299

Abstract: BY296 BY297 BY298 by299-800
Contextual Info: BY296 . BY299 BY296 . BY299 Fast Silicon Rectifier Diodes – Schnelle Silizium-Gleichrichterdioden Version 2010-03-30 Nominal current Nennstrom 7.5±0.1 Type 62.5 ±0.5 Ø 4.5+0.1 -0.3 Ø 1.2±0.05 Dimensions - Maße [mm] 2A Repetitive peak reverse voltage

BY296

Abstract: BY297 BY298 BY299
Contextual Info: BY296 - BY299 FAST RECOVERY RECTIFIER DIODES PRV : 100 - 800 Volts Io : 2.0 Amperes DO-201AD FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency

Contextual Info: BY296 - BY299 FAST RECOVERY RECTIFIER DIODES PRV : 100 - 800 Volts Io : 2.0 Amperes DO-201AD FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency

BY296

Abstract: BY297 BY298 BY299
Contextual Info: BY296 - BY299 FAST RECOVERY RECTIFIER DIODES PRV : 100 - 800 Volts Io : 2.0 Amperes DO-201AD FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency

BY296

Abstract: BY297 BY298 BY299 BY299 Diodes
Contextual Info: BY296 - BY299 FAST RECOVERY RECTIFIER DIODES PRV : 100 - 800 Volts Io : 2.0 Amperes DO-201AD FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency

Contextual Info: tmmwmm FAGOR ? BY296.BY299S Dimensions in mm. D 0-201 AD Plastic Voltage 100 to 1.000 V. Current 2.0 A. at 50°C. jA i • Fast Recovery Diodes Mounting instructions • Diffused junction 1. Min. distance from body to soldering point, 4 mm. • High current capability

BY290

Abstract: BY290/FRi55 BY296 BY297 BY298 BY299 BY299S
Contextual Info: BY296.BY299S 2 Amp. Fast Recovery Silicon Diodes Dimensions in mm. DO-201 AD Plastic Voltage 100 to 1000 V. Current 2.0 A. at 50°C. 9.1 ± 0.3 62.5 ± 0.5 • Fast Recovery Diodes Mounting instructions 1. Min. distance from body to soldering point,

BY297

Abstract: BY298 BY299S BY296 BY299
Contextual Info: BY296 THRU BY299S FAST RECOVERY SILICON RECTIFIER Reverse Voltage - 100 to 1000 Volts Forward Current - 2.0 Amperes Features Fast recovery diodes Diffused junction High current capability The plastic material carries U/L recognition 94V-0 Terminals: Axial leads

BA150

Abstract: BY390 1P640 1P643 1P644 1P645 1P646 BA157 BA158 BA159
Contextual Info: | SEMICONDUCTORS INC DTE D fll3bbSQ 0DD0SS4 □| T" Ò 3, - g Fast Recovery Silicon Diodes. 1 Amp. to 3 Amps. The plastic material carries U/L recognition 94 V-O. Type Peak Inverse V oltage Repetitive Peak Forward Current Surge Forward Current Ta P.l.V.

BY290/FRi55

Abstract: BY399 fagor
Contextual Info: FAGOR ^ Fast recovery silicon diodes. 2 Amp. to 3 Amps. The plastic material carries U L recognition 94V-0. Average Peak Rectified Inverse Current Voltage Type I at T VRRM A (°C ) (V) Repetitive Peak Forward Current IFKM Surge Forward Current I (A) (A)

FRI57

Abstract: FRi55 fri07 BAI 59 FRi52 BAI 57 BAi58 FRI53 EiC series BA150
Contextual Info: E i e SEUICONDUCTOR INC fe,ÖE D • OQDQOm fl P2 ■ EICS Fast recovery silicon diodes. 1.0 Amp. to 3 Amps. The plastic material carries U /L recognition 94V-0. Type A verage Rectified Current V AV (A) Peak Inverse Voltage V RRM at (°C) Repetitive Peak Forward

SB550 1n5402

Abstract: BY2000 P1000J p1000M p1000s BY1800 1N4002 1N4003 SB840 1N4005
Contextual Info: 3A 5A 5/8 A 12 A 7.5±0.1 ±0.5 62.5 7,5±0.1 62.5±0.5 Type 7.5 ±0.1 Type ±0.5 6.3±0.1 Type 62.5±0.5 5.1-0.1 Type +0.5 62.5 -2.5 3.9 62.5 Voltage [V] Diodes / Rectifiers Standard Recovery 2A 5/6 A 10.15 A 15/20 A 25 A 30 A Current 1N4001 BYW27-50 1N5391

Contextual Info: Fast recovery silicon diodes. 1.5 Amps, to 2.5 Amps. The plastic material carries U/L recognition 94V-0. Maximum Average Max.Recurrent Repetitive Forward Reverse Forward Rectified Peak Forward Surge TYPE Voltage Current Current Current V rr m I fca V Ta Ifrm

K40UF

Abstract: SV0200-2 300F2 ER3001 300L2 1NS417 ER3004 SV0200
Contextual Info: HIGH•SPEED DIODES Item Number Part Number 10 Max A VAAM (V) trr Max (s) VF IF Max @ Test (V) (A) Package Style High-Speed Diodes, General-Purpose (Cont'd) BY29S 2.0 100 1.3 3.0 00-27 . 1S0 SOOn SV01S0-2 2.0 1.1 2Sn 2.0 00-41 S 10 SV0200-2 2PFF2 1N4942 BY297

TCA700y

Abstract: SAF1091 TCA700 SAK215 MSP3400 ACP2371-NI ADC2301E SAF1092 5.1 audio converter speech to text converter ic
Contextual Info: List of Types - Integrated Circuits ICs for Consumer Electronics Type Type Page CCD3000 CCU2050 CCU2050PI CCU2070 CCU2070PI CCU3000 CCU3001 CCU3002 CCU3004 CCU3005C/D/E CCU3008 SAA1293A TFP02065/ TVP02066 Closed-Caption-Decoder Central Control Unit Central Control Unit

MDA2501

Abstract: pbl302 g1756 g1756 Diode MDA2502 MDA970A6 MDA3510 MDA2500 MDA3502 Bridge rectifier mda970a1
Contextual Info: DIOTEC ELECTRONICS CORP SflE D • Sfl^lG? ÜDOOlfl^ bTT WÊDIX Appendix IV: Cross Reference Tables <x^o\ _oZ_ SCHOTTKY BARRIER DIODES: INDUSTRY PART NO. 1N5817 1N5818 1N5819 1N5820 1N5821 1N5822 1N5823 1N5824 1N5825 MBR1035 MBR1045 MBR1050 MBR1060 MBR1090

EQUIVALENT BYD33D

Abstract: 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent
Contextual Info: DISCRETE SEMICONDUCTORS Cross reference guide Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Cross reference guide “Philips Type” refers to closest Philips alternative or direct equivalent if available. Always consider the application and

BY228 equivalent

Abstract: BYD14G RU20A cross reference
Contextual Info: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book Sinterglass Avalanche Diodes vishay semiconductors vSE-db0112-1009 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

diode cross reference

Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
Contextual Info: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: Support@diotec-usa.com DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS

BUT11APX equivalent

Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
Contextual Info: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books