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    BY299S Search Results

    BY299S Datasheets (4)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    BY299S
    Changzhou Galaxy Electrical Rectifier Diode, Fast Recovery Rectifier, Single, 1000V, DO-27, 2-Pin Original PDF 53.78KB 2
    BY299S
    Good-Ark FAST RECOVERY SILICON RECTIFIER Original PDF 49.2KB 2
    BY299S
    Fagor 2 Amp Silicon Diodes Scan PDF 340.21KB 7
    BY299S
    Fagor 2 Amp Fast Recovery Silicon Diodes Scan PDF 77.78KB 2
    SF Impression Pixel

    BY299S Price and Stock

    Luguang Electronic Technology Co Ltd

    Luguang Electronic Technology Co Ltd BY299S

    Diode: rectifying; THT; 1kV; 2A; Ifsm: 70A; DO27; tape; Ufmax: 1.3V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME BY299S 1,191 1
    • 1 $0.34
    • 10 $0.20
    • 100 $0.07
    • 1000 $0.04
    • 10000 $0.03
    Buy Now

    BY299S Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BY297

    Abstract: BY298 BY299S BY296 BY299
    Contextual Info: BY296 THRU BY299S FAST RECOVERY SILICON RECTIFIER Reverse Voltage - 100 to 1000 Volts Forward Current - 2.0 Amperes Features Fast recovery diodes Diffused junction High current capability The plastic material carries U/L recognition 94V-0 Terminals: Axial leads


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    by296by299sby297by298+1by299 PDF

    BY298 Diode

    Abstract: diode BY299 by299 diode diode BY298 BY296 BY297 BY298 BY299 BY299S
    Contextual Info: CURRENT 2.0 Amperes VOLTAGE 100 to 1000 Volts BY296 THRU BY299S Features • Plastic package has Underwrites Laboratory Flammability Classification 94V-0 · Fast switching speed · Diffused junction · High current capability · High temperature soldering guaranteed : 250℃/10 seconds,


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    by296by299sdo-201admil-std-750+7by298 diodediode by299by299 diodediode by298by297by298by299 PDF

    BY290

    Abstract: BY290/FRi55 BY296 BY297 BY298 BY299 BY299S
    Contextual Info: BY296.BY299S 2 Amp. Fast Recovery Silicon Diodes Dimensions in mm. DO-201 AD Plastic Voltage 100 to 1000 V. Current 2.0 A. at 50°C. 9.1 ± 0.3 62.5 ± 0.5 • Fast Recovery Diodes Mounting instructions 1. Min. distance from body to soldering point,


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    by296by299sdo-201by297+4by298by299by290by290/fri55 PDF

    Contextual Info: tmmwmm FAGOR ? BY296.BY299S Dimensions in mm. D 0-201 AD Plastic Voltage 100 to 1.000 V. Current 2.0 A. at 50°C. jA i • Fast Recovery Diodes Mounting instructions • Diffused junction 1. Min. distance from body to soldering point, 4 mm. • High current capability


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    by296by299sby297by298+2by299by290 PDF

    Contextual Info: BY299SGP Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current2.0 V(RRM)(V) Rep.Pk.Rev. Voltage800 t(rr) Max.(s) Rev.Rec. Time500n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage1.3


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    by299sgpvoltage800time500ncurrent10u+3current200ustyleaxial-10urrent200u PDF

    BY296

    Abstract: BY299S
    Contextual Info: BL GALAXY ELECTRICAL BY296 Z -BY299S(Z) VOLTAGE RANGE: 100- 1000 V CURRENT: 2.0 A FAST RECOVERY RECTIFIER FEATURES DO - 27 Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol


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    by296---by299sdo-27std-202+1by299s PDF

    FA60R

    Abstract: AT50A BY296 BY299S diode do-201
    Contextual Info: 57E D • 345*1325 GD0D74D 2b4 IFGRS BY296 HM iOR BY299S FA60R ELECTRONICS 2 Amp. Fast Recovery Silicon Diodes Dimensions in nun. D0-201 AD DO-27 A io Plastic Q 8o Voltage 100 to 1.000 V. Current 2.0 A. at50°C. ■ al f.3103 • Fast Recovery Diodes Mounting instructions


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    by296by299sfa60rdo-201+4do-2703oc0tt-0at50adiode do-201 PDF

    BY299S

    Abstract: k 2968 BY296S BY297S BY298S
    Contextual Info: BY296S. BY299S Fast Silicon Rectifiers Nominal forward current Repetitive peak reverse voltage 2A 100. 800 V The rectifiers in plastic case 17-02 are designated by suffix S. Dim. Milli meters Min. Max. A 8.38 8.89 B 3.30 3.68 C 25.40 31.75 D 0.94 1.09


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    by296sby299sby297sby298s+24bfl2711k 2968 PDF

    BY296

    Abstract: BY299S FA60R HVR062 diode do-201
    Contextual Info: 57E D • 345*1325 GD0D74D 2b4 IFGRS BY296 H M iO R BY299S FA60R ELECTRONICS 2 Amp. Fast Recovery Silicon Diodes Dimensions in nun. D0-201 AD DO-27 A in Plastic Q 8o Voltage 100 to 1.000 V. Current 2.0 A. at50°C. ■ al f.3103 • Fast Recovery Diodes Mounting instructions


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    by296by299sfa60rdo-201+7do-27c2-17do-201addo-27ado-201aehvr062diode do-201 PDF

    299S

    Abstract: G661 BY290/FRi55
    Contextual Info: 57E D • H M iO R 345*1325 GD0D74D 2b4 IFGRS BY296 BY299S FA60R ELECTRONICS 2 Amp. Fast Recovery Silicon Diodes Dimensions in nun. D0-201 AD DO-27 A io Plastic Q 8o Voltage 100 to 1.000 V. Current 2.0 A. at50°C. ■ al f.3103 • Fast Recovery Diodes Mounting instructions


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    gd0d74dby296by299sfa60r+9d0-201do-27do-201addo-27a--------------do-201aedo-201299sg661by290/fri55 PDF

    Contextual Info: BY299S Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current2 V(RRM)(V) Rep.Pk.Rev. Voltage800 t(rr) Max.(s) Rev.Rec. Time500n @I(F) (A) (Test Condition)10m @I(R) (A) (Test Condition)10m V(FM) Max.(V) Forward Voltage1.3 @I(FM) (A) (Test Condition)3


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    by299svoltage800time500ncurrent10u PDF

    BYX 13 400 R

    Abstract: BY 218-400 byx 200 BY299S by 228 BYX92 GS43 1D013 10MSA Diodes de redressement
    Contextual Info: fast recovery rectifier diodes < 100 A ^ diodes de redressement rapide < 100 A Types •o Vr r m ■f s m 10 ms Vf A (V) (A) (V) (A) 60 1,3 1 / lF max 1 A / Tamb = 40°C BYX92- 50 BYX 92-100 BYX 92-200 BYX 92-300 BYX 92-400 1A / BYX BYX BYX BYX BYX Tamb


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    byx92-cb-37cb-317by299s+9byx 13 400 rby 218-400byx 200by 228byx92gs431d01310msadiodes de redressement PDF

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


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    bap1321-02bap65-05bap65-03bap65-05w+16bap65-02bap63-03bap63-02bap64-03bap64-02bb143bc548 transistor replacementtyn612 pin diagram1n4007 smd, toshibas0817mhtyn604 scr pin diagramkmz51 compasstransistor s1a 64 smdtoshiba l 300 laptop motherboard circuit diagramjfet transistor replacement guide j201replacements for transistor nec d 587 PDF

    BUT11APX equivalent

    Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
    Contextual Info: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210


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    bt148-600rbt148-400rbut11apx equivalentbu4508dx equivalent+82sd18762sd1651 equivalentbys21-45smd zener diode color band2sd1878 data sheet2sc5296 equivalentbt151-600rbuk98150 spice PDF

    26fbp06

    Abstract: SKE350CA B80C2000 Fagor* fbi 3.7 B250C1500 1000 SKE400 FBU4K BAI 59 fagor B80C1500 26FBP04
    Contextual Info: FAGOR ^ Numerical Index 1N4001 . . 1N4001F . . 1N4001GP . . 1N4002 . . 1N4002F . . 1N4002GP . .


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    1n40011n4001f1n4001gp1n4002+161n4002f1n4002gp1n40031n4003f1n4003gp1n400426fbp06ske350cab80c2000fagor* fbi 3.7b250c1500 1000ske400fbu4kbai 59fagor b80c150026fbp04 PDF

    LR Amps

    Abstract: Fast Silicon Rectifiers BA157 BA157S BA158 BA158S BA159 BA159S LZ4001 LZ4002
    Contextual Info: RECTIFIERS ITT SEMI COND/ INTERP1ETALL Fast Silicon R ectifiers 1 A Type BA157 BA158 BA159 BY296 BY297 BY298 BY299 Fast S ilico n R ectifiers 3 A Type BY396 BY397 BY398 BY399 56 Peak Inverse Voltage Surge Forward Current Half Cycle 50 Hz Max. Forward Voltage Drop


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    00qss27ba157ba159ba157s+8ba159sdo-41ba158ba158slr ampsfast silicon rectifierslz4001lz4002 PDF

    IR 30DF

    Abstract: FF1004 RGP10 DO-201AD BA150 BY290 30df FF1506 FF1504 BY398GP
    Contextual Info: QUICK GUIDE Fast Recovery Rectifiers FAST RECOVERY RECTIFIERS (AXIAL DEVICES) IF IFSM 50V 100V 200V RGP08 1A 30A RGP08A RGP08B RGP08D FF1001 FF1002 FF1003 SERIES FF1000 1A 35A BA150GP 1A 35A 1N4930GP 1A 30A 1N4933GP RGP10A 1N4934GP 300V 400V 500V RGP08G


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    rgp08rgp08argp08brgp08d+16ff1001ff1002ff1003ff1000ba150gprgp08jir 30dfff1004rgp10do-201adba150by29030dfff1506ff1504by398gp PDF

    EQUIVALENT BYD33D

    Abstract: 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent
    Contextual Info: DISCRETE SEMICONDUCTORS Cross reference guide Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Cross reference guide “Philips Type” refers to closest Philips alternative or direct equivalent if available. Always consider the application and


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    pbyr3045wtbyd73dctb34mbyd73g+14sb1035pbyr10401n5059sb1040equivalent byd33d1n5062 equivalentsuf5402diode cross reference bys21-45bys21-451n4007 general instrumentsby255 ittda3/10001n6644fr207 equivalent PDF

    SBLF10100CT

    Abstract: SBLF1030CT-SBLF10100CT SB320-SB3A0 sbl20100 SMD 1N60 RN1Z 1N4139-1N4146 MTZJ 188 US2A-US2M LR kbpc3510
    Contextual Info: CONTENTS TABLE OF CONTENTS ……………………C NUMERICAL INDEX ……………………L SYMBOLS AND TERMS ……………………S HIGH RELIABILITY EXPERIMENT ……………………U trr REVERSE RECOVERY TIME MEASUREMENT CIRCUIT ……………………V


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    szq50a24l3szq50a28l3szq50a34l3szq50a38l3+14szq50k24l3szq50k28l3szq50k34l3szq50k38l3sblf10100ctsblf1030ct-sblf10100ctsb320-sb3a0sbl20100smd 1n60rn1z1n4139-1n4146mtzj 188us2a-us2mlr kbpc3510 PDF

    BT136-600E equivalent

    Abstract: D2499 equivalent D1878 equivalent BT139-600 equivalent C4927 d1577 d1554 C5386 c5129 e13005 equivalent
    Contextual Info: “Philips Type” refers to closest Philips alternative or equivalent if available. Always consider the application and compare data specifications before recommending the suitable Philips type. Notes: 1 - dual device. 2 - competitor RDS on falls between two Philips types, hence either stated device may be suitable.


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    10tq045s11dq0311dq0411eq03+1411eq0411eqs15df41n3645bt136-600e equivalentd2499 equivalentd1878 equivalentbt139-600 equivalentc4927d1577d1554c5386c5129e13005 equivalent PDF

    BU4508DX equivalent

    Abstract: BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note diode cross reference BYW96E ct 2A05 diode BU2508Dx equivalent ST2001HI equivalent BU2508DF equivalent
    Contextual Info: 6535 07-03-2001 06:32 Pagina 1 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210


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    bt148-600rbt148-400rbu4508dx equivalentbut11apx equivalent+8s0806mhp0201ma to92bt136 application notediode cross reference byw96ect 2a05 diodebu2508dx equivalentst2001hi equivalentbu2508df equivalent PDF

    ba159 smd

    Abstract: ITT BY297 BY296 itt ITT BY399
    Contextual Info: RECTIFIERS ITT S E M I C O N D / INTERP1ETALL Fast Silicon Rectifiers 1 A Type BA157 BA158 BA159 BY296 BY297 BY298 BY299 Fast Silicon Rectifiers 3 A Type BY396 BY397 BY398 BY399 56 Max. Forward Voltage Drop Max. Reverse Current Max. Reverse Recovery Time VF


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    4bfi2711ba157ba159ba157s+7ba159sdo-41ba158ba159 smditt by297by296 ittitt by399 PDF

    BY290/FRi55

    Abstract: BY399 fagor
    Contextual Info: FAGOR ^ Fast recovery silicon diodes. 2 Amp. to 3 Amps. The plastic material carries U L recognition 94V-0. Average Peak Rectified Inverse Current Voltage Type I at T VRRM A (°C ) (V) Repetitive Peak Forward Current IFKM Surge Forward Current I (A) (A)


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    by290do-201by296by297+7by298by299by299sby390by396by290/fri55by399 fagor PDF