DIOD Search Results

C 34 F

Abstract: 1SV274 D234
Contextual Info: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV274 C A T V T U N IN G . • • • • High Capacitance Ratio : C2V / C25V = 12.5 Typ. Low Series Resistance : rs = 0.6f2 (Typ.) Excellent C-V Characteristics, and Small Tracking Error. Small Package

2SD1294

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SD1294 POWER REGULATOR FOR LINE OPERATED TV. Unit in mm # 3 .2 ± Q 2 FEATURES : . Excellent Wide Safe Operating Area (80 W.s z at Tc=25°C) . eo . Included Abalanche Diode : Vz=60±15V . High DC Current Gain

Contextual Info: TOSHIBA PHOTO RELAY TLP595A Unit in mm Telecommunication Data Acquisition Measurement Instrumentation The Toshiba TLP595A consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a six lead plastic DIP package. The

Contextual Info: TO SHIBA 1SS315 TOSHIBA DIODE UHF BAND M IXER APPLICATIONS. 1 SS31 5 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm +0.2 .1 .2 5 -0 . il Nh ÖÖ + 1 M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Maximum (Peak) Reverse Voltage Forward Current Junction Temperature

T500mA

Contextual Info: TD62107F BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62107F DARLINGTON DRIVER WITH ENABLE_ The T D 6 2 1 0 7 F is c omprised of four NPN d a rlington output stages and enable inputs w h i c h can gate the outputs. All o u t p u t s feature integral c lamp diodes for s w i t c h ­

1n758

Contextual Info: TYPES 1N746 THRU 1N759, 1N746A THRU 1N759A SILICON VOLTAGE-REGULATOR DIODES B U L L E T IN NO . D L -S 7311942, M A R C H 1973 V z . . . 3.3 V to 12 V, P d • • •400 mW • Available in 5% and 10% Tolerances • Rugged Double-Plug Construction description and mechanical data

Reel Taping Specification JEDEC

Contextual Info: i V. AXIAL TAPING FOR DO-35 PACKAGE A. PRODUCT NAMING SYSTEM Type of package for shipment is classified by a symbol suffixed to a diode name. [Example] 1N4148 TPA2 © - © i- © B. Indicates the taping specifications Indicates JEDEC registration no.

dg1u

Abstract: TLP624
Contextual Info: TLP624,-2,-4 GaAs IRED a PHOTO-TRANSISTOR TLP6 24 PRO G RAM M ABLE CONTROLLERS AC /DC-INPUT M ODULE TELECOM M UNICATIO N The TOSHIBA TLP624, -2 and -4 consist of a gallium arsenide infrared emitting diode optically coupled to a photo-transistor. The TLP624-2 offers two isolated channels in an eight lead plastic

Contextual Info: GaAÄAs IRED a PHOTO-MOS FET TLP595G TELECOMMUNICATION Unit in m m DATA ACQUISITION MEASUREMENT INSTRUMENTATION The T O S H I B A T L P 5 9 5 G condists of an a l u m i n u m g alium ar s e n i d e infra red e m i tting diode o p t i c a l l y coupled to a p h o t o - M O S FET in a eight lead plastic D IP

TA8707

Abstract: SSOP-16 TA8756F TA8709F
Contextual Info: Camera ICs A5 Function Type No. 77 Features Package H-bridgo Upper Side Built in bias resistors SSOP16 H-bridge Built in bias resistors, free wheeling diodes (lower side) SSOP16 4 channel sink drivers Drivers for LED and plunger for camera Drivers for film loading motor

MG50G2CL3

Abstract: Mg50G2cl mg50g2
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG50G2CL3 HIGH POWER SWITCHING APPLICATIONS. Unit in ram MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector Is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-In to 1 Package. . High DC Current Gain: hFE=100 Min. (Ic=50A)

TLP338

Contextual Info: TLP337,338 GaAs IRED a PHOTO-TRANSISTOR TENTATIVE DATA TELECOMMUNICATION. OFFICE MACHINE. TELEPHONE USE EQUIPMENT. The TOSHIBA TLP337 and TLP338 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package.

1s1555 diode

Abstract: silicon diode 151555 1s1555 silicon diode 1S1555 1s1554 diode 1S1554 1S1553/1S1555
Contextual Info: TOSHIBA W? {DISCRETE/OPTO} 9097250 TOSHIBA DeT| TDT?2SG 0 0 0 ^ 7 D I S C R E T E / O P T O _^ 67C 09297 3 | D. / - Silicon Epitaxial "Planar Type 1S1553-1S1555 Diode Unit in tran GENERAL PURPOSE APPLICATION FOR DETECTOR AND RECTIFIER. FEATURES:

1N4447

Contextual Info: TYPES 1N4148. 1N4149, IN U M i : ^ 4 i9 SILICON SWITCHING DIODES B U L L E T IN NO. D L-S 739269, O C T O B E R 1 9 6 6 - R E V I S E D M A R C H 1973 FA ST S W IT C H IN G D IO D E S • Rugged Double-Plug Construction Electrical Equivalents: 1N4148 . . . 1N914 . .

MG400H1FK1

Abstract: LF400A
Contextual Info: MG400H1FK1 G TR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain : h]?E=200 Min. . Low Saturation Voltage

S1854

Abstract: transistor s1854 s1854 a s1854 equivalent ic s1854 SI854 REGULATOR s1854 transistor s1854 ic error REGULATOR IC FOR 150V s1854 B1036
Contextual Info: SILICON N-SUBSTRATE MONOLITHIC TYPE S1854 SI854 IS A REGULATOR DRIVER FOR LINE OPERATED TV, Unit in mm WHICH ARE BUILT UP OF ERROR AMPLIFIER TRANSISTOR, 10.3MAX. 0&6±O,2 STANDARD VOLTAGE ZENER DIODE AND POLY-SILICON RESISTORS ON MONOLITHIC CHIP. FEATURES:

TLP55

Contextual Info: T O SH IB A TLP5590GM TOSHIBA PHOTOCOUPLER GaAM s IRED + PHOTO-IC TLP55 90GM) TRANSISTOR INVERTOR U nit in mm INVERTER FOR AIR CONDITIONER LINE RECEIVER IPM INTERFACES The TOSHIBA TLP559 IGM) consists of a GaA£As high-output light emitting diode and a high speed detector of one chip photo diodetransistor.

TLP639

Abstract: TLP639-F TLP639F VDE-0110
Contextual Info: TLP639F GaAs IRED a PHOTO-TRANSISTOR TENTATIVE DATA Unit in mm OFFICE MACHINE HOUSEHOLD USE EQUIPMENT 6 5 4 PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE TELECOMMUNICATION The TOSHIBA TLP639F consists of two gallium arsenide infrared emitting diode connected inverse parallel,

MG30G2YM1

Abstract: LD30A
Contextual Info: GTR MODULE SILICON N CHANNEL MOS TYPE MG30G2YM1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm . The Drain is Isolated from Case. . 2 MOS FETs are Built-in to 1 Package . With Built-in Free Wheeling Diode. . Low Drain-Source ON Resistance

A1N4752

Abstract: 1N4728 1N4732
Contextual Info: TYPES 1N4728 THRU 1N4752, 1N4728A THRU 1N4752A SILICON VOLTAGE-REGULATOR DIODES B U L L E T IN f N O . D L -S 7 3 1 1 9 4 9 , M A R C H 1 9 7 3 V z . . . 3.3 V to 33 V PD • • • 1 W • Available in 5% and 10% Tolerances • Rugged Double-Plug Construction

MG75M2CK1

Abstract: tkp7
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG75M2CK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built Into 1 Package. . High DC Current Gain

Contextual Info: TOSHIBA TENTATIVE TA8303F TO SH IBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON M ONOLITHIC TA 8303F MOTOR DRIVER FOR CAMERA TA8303F is Multi Chip 1C incorporates 6 low saturation discrete transistors w hich equipped Bias resistor and FreeW heeling diode. This 1C is suitable for a camera use motor drive

Contextual Info: y — IN T E G R A T E D C IR C U IT S UC1610 UC3610 UNITRODE DUAL Schottky Diode Bridge FEATURES DESCRIPTION • Monolithic Eight-Diode Array This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection makes this

T41G

Contextual Info: OSHIBA < LASER/FBR OPTIC 01 t • 10172S2 DOlbDIS 7 ■ TOSb O T-41-G7 TOSHIBA LASER DIODE TOLD 370 Features • Wavelength 1,55/im • Simple Coaxial Package • Suitable for Local Subscriber Networks • Single-mode Fiber Pigtail 10/125/tm) • Hermetically Sealed