RF2001 Search Results

RF2001T4S

Contextual Info: RF2001T4S Diodes Fast recovery diode RF2001T4S zApplications General rectification zExternal dimensions Unit : mm zStructure 4.5±0.3 0.1 2.8±0.2 0.1 15.0±0.4 0.2 8.0±0.2 12.0±0.2 zConstruction Silicon epitaxial planar 5.0±0.2

rf2001

Abstract: RF2007 RF2005 rf2000 FL01
Contextual Info: » m FAGOR S7E 345^5 D D G D ? n 754 IFGRS RF2001 . RF2007 „ FAGOR ELECTRONICS .Amp. Silicon Rectifier Diodes • Dimensions in nun. DO-15 Voltage 50 to 1.000 V. Plastic Current 2.0 A. at 55°C. Mounting instructions 1. Min. distance from body to soldering point,

RF2001-T3D

Contextual Info: Data Sheet Fast recovery diodes RF2001T3D Dimensions Unit : mm Applications General rectification Structure 4.5±0.3 0.1 Features 1) Cathode common type. (TO-220) 2) Ultra Low V F 3) Very fast recovery 4) Low switching loss 8.0±0.2

RF2001T2D

Contextual Info: RF2001T2D Data Sheet Fast recovery diode RF2001T2D Applications General rectification Dimensions Unit : mm  Structure 4.5±0.3 0.1 2.8±0.2 0.1 10.0±0.3 0.1 5.0±0.2 ① 13.5MIN 1.2 Construction Silicon epitaxial planar

Contextual Info: Data Sheet Fast recovery diode RF2001T4S Applications General rectification  Dimensions Unit : mm Structure Features 1) High reliability. (TO-220) 2) Low noise. 3) Very fast switching . (1) (2) (3) Construction Silicon epitaxial planar

RF2001

Abstract: RF2007 rf2000 RF2005
Contextual Info: RF2001 . RF2007 2 Amp. Silicon Rectifier Diodes Dimensions in mm. DO-15 Plastic Voltage 50 to 1000 V. Current 2.0 A. at 55°C. 6.35 ± 0.2 58.5 min. • Low cost Mounting instructions 1. Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350°C.

RF2001T3D

Abstract: bv-300 RF*T3D RF2001 TRS1 DRF2001T3D RF2001-T3D ,RF2001T3D
Contextual Info: SPICE PARAMETER RF2001T3D by ROHM FAE Div. * RF2001T3D D model * Date: 2008/07/29 .MODEL RF2001T3D D + IS=15.486E-9 + N=1.4399 + RS=22.191E-3 + IKF=94.033E-3 + CJO=363.34E-12 + M=.48883 + VJ=.59618 + ISR=101.31E-12 + NR=4 + BV=300 + TT=41.113E-9 + TRS1=-0.001

RF2001

Abstract: RF2001n
Contextual Info: Data Sheet Super Fast Recovery Diode RF2001NS3D Series Standard Fast Recovery Dimensions Unit : mm Land size figure (Unit : mm) RF2001 NS3D Applications General rectification ① Features 1)Ultra low switching loss 2)High current overload capacity

BAI59

Abstract: B40 35-10 IN5345B Diodes In4007 HVR062 IN4007F RF2007 B40C3700-2200 b40c2000 rf2001
Contextual Info: FAGOR ^ NUMERICAL INDEX TRANSIENT VOLTAGE SUPPRESSOR DIODES RECTIFIER DIODES Plastic Case IN4007F. 1N4001F. IN4007 . 1N4001 . P513 . BY 133 . 1N5399 . 1N5391 . RF2007 . RF2001 . BY255 .

RF2001T2D

Contextual Info: Fast recovery diode RF2001T2D Dimensions Unit : mm Applications General rectification  Structure 4.5±0.3 0.1 15.0±0.4 0.2 8.0±0.2 12.0±0.2 ① 8.0 (1) (2) (3) 5.0±0.2 1.2 13.5MIN Features 1) Cathode common type. (TO-220)

2360a

Abstract: RF2001T4S rf2001t
Contextual Info: Fast recovery diode RF2001T4S Applications General rectification  Dimensions Unit : mm Structure 4.5±0.3 0.1 Features 1) High reliability.(TO-220) 2) Low noise. 3) Very fast switching . 15.0±0.4 0.2 8.0 8.0±0.2

2360A

Abstract: RF2001T4S
Contextual Info: RF2001T4S Data Sheet Fast recovery diode RF2001T4S Applications General rectification  Dimensions Unit : mm Structure 4.5±0.3 0.1 Features 1) High reliability. (TO-220) 2) Low noise. 3) Very fast switching . 15.0±0.4

RF2001T3D

Contextual Info: RF2001T3D Data Sheet Fast recovery diodes RF2001T3D Dimensions Unit : mm Applications General rectification Structure 4.5±0.3 0.1 Features 1) Cathode common type. (TO-220) 2) Ultra Low V F 3) Very fast recovery 4) Low switching loss

Contextual Info: Data Sheet Fast recovery diode RF2001T2D Applications General rectification Dimensions Unit : mm  Structure 4.5±0.3 0.1 2.8±0.2 0.1 10.0±0.3 0.1 Features 1) Cathode common type. (TO-220) 2) Ultra Low V F 3) Very fast recovery

rf2001

Abstract: RF2007 rf2000 2 amp silicon rectifier
Contextual Info: RF2001 . RF2007 2 Amp. Silicon Rectifier Diodes Dimensions in mm. DO-15 Plastic Voltage 50 to 1000 V. Current 2.0 A. at 55°C. 6.35 ± 0.2 58.5 min. • Low cost Mounting instructions 1. Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350°C.

Contextual Info: Data Sheet AEC-Q101 Qualified Fast recovery diodes RF2001T3DFH Applications General rectification Dimensions Unit : mm Structure 4.5±0.3 0.1 Features 1) Cathode common type. (TO-220) 2) Ultra Low V F 3) Very fast recovery 4) Low switching loss

RF2001T2D

Contextual Info: RF2001T2D Diodes Fast recovery diode RF2001T2D zApplications General rectification zExternal dimensions Unit : mm zStructure 4.5±0.3 0.1 zFeatures 1) Cathode common type. (TO-220) 2) Ultra Low VF 3) Very fast recovery 4) Low switching loss 2.8±0.2

RF2007

Abstract: RF2001
Contextual Info: FAGOR ^ RF2001 .RF2007 2 Amp. Silicon Rectifier Diodes Dimensions in mm. DO-15 Plastic Voltage 50 to 1.000 V. Current 2.0 A. at 55°C. • Low cost Mounting instructions • Diffused junction 1. Min. distance from body to soldering point, 4 mm.

RF2001T3D

Abstract: RF2001-T3D ,RF2001T3D RF2001-T3D
Contextual Info: RF2001T3D Diodes Fast recovery diode RF2001T3D zExternal dimensions Unit : mm zApplications General rectification zStructure 9.9 2.2 0.3 0.8 10.0 4.5±0.3 0.1 10.0±0.3 0.1 1.8±0.2 2.8±0.2 0.1 1.1 7.2 5.0±0.2 ① 8.0 8.0±0.2

Contextual Info: RF2001T2D Diodes Fast recovery diode RF2001T2D zApplications General rectification zExternal dimensions Unit : mm zStructure 9.9 2.2 0.3 0.8 10.0 4.5±0.3 0.1 10.0±0.3 0.1 1.8±0.2 2.8±0.2 0.1 1.1 7.2 5.0±0.2 ① 8.0 8.0±0.2

RF2001T2D

Contextual Info: RF2001T2D Diodes Fast recovery diode RF2001T2D zApplications General rectification zDimensions Unit : mm zStructure 4.5±0.3 0.1 zFeatures 1) Cathode common type. (TO-220) 2) Ultra Low VF 3) Very fast recovery 4) Low switching loss 2.8±0.2 0.1

Contextual Info: Data Sheet Fast recovery diodes RF2001T3D Applications General rectification Dimensions Unit : mm Structure 4.5±0.3 0.1 Features 1) Cathode common type. (TO-220) 2) Ultra Low V F 3) Very fast recovery 4) Low switching loss 8.0±0.2

RF2001

Contextual Info: » S7E m FAGOR 345^5 D D G D ? n 754 IFGRS RF2001 . RF2007 „ FAGOR ELECTRONICS • . Amp. Silicon Rectifier Diodes Dimensions in nun. DO-15 Voltage 50 to 1.000 V. Plastic Current 2.0 A. at 55°C. • Low cost Mounting instructions 1. Min. distance from body to soldering point,

RF2001T4S

Abstract: 2360a
Contextual Info: Data Sheet Fast recovery diode RF2001T4S Applications General rectification  Dimensions Unit : mm Structure 4.5±0.3 0.1 Features 1) High reliability. (TO-220) 2) Low noise. 3) Very fast switching . 15.0±0.4 0.2