BUZ71A ST Search Results

BUZ71A

Abstract: transistor buz71a STripFET
Contextual Info: BUZ71A  N - CHANNEL 50V - 0.1Ω - 13A -TO-220 STripFET POWER MOSFET T YPE BUZ71A • ■ ■ ■ ■ V DSS R DS o n ID 50 V < 0.12 Ω 13 A TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE

BUZ71A

Abstract: transistor buz71a din IEC 68-1
Contextual Info: SGS-THOMSON ^ 7 # M Ê IS M IL II ? » *! {Z T BUZ71A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS BUZ71A 50 V ^DS on 0.12 fi 'd 13 A • ULTRA FAST SWITCHING • LOW DRIVE ENERGY FOR EASY DRIVE • COST EFFECTIVE INDUSTRIAL APPLICATIONS:

Z71A

Contextual Info: Æ 7 SGS-THOMSON BUZ71A * 7 # , Riflô g^ i[Li TrmQ(gs N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^DS(on BUZ71A 50 V 0.12 fi Id 13 A • ULTRA FAST SWITCHING • LOW DRIVE ENERGY FOR EASY DRIVE • COST EFFECTIVE INDUSTRIAL APPLICATIONS:

BUZ71A

Contextual Info: BUZ71A N - CHANNEL 50V - 0.1Ω - 13A TO-220 STripFET POWER MOSFET TYPE BUZ71A • ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.12 Ω 13 A TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE

buz71a

Abstract: transistor buz71a BUZ71A DATASHEET datasheet BUZ71A datecode G1 BUZ71A ST BUZ71A S
Contextual Info: BUZ71A  N - CHANNEL 50V - 0.1Ω - 13A TO-220 STripFET POWER MOSFET T YPE BUZ71A • ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.12 Ω 13 A TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE

BUZ71A

Abstract: BUZ71AFI
Contextual Info: BUZ71A BUZ71AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS R DS on ID BUZ71A BUZ71AFI 50 V 50 V < 0.12 Ω < 0.12 Ω 16 A 11 A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

BUZ71A

Abstract: BUZ71AFI
Contextual Info: BUZ71A BUZ71AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS R DS on ID BUZ71A BUZ71AFI 50 V 50 V < 0.12 Ω < 0.12 Ω 16 A 11 A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

BUZ71A

Abstract: BUZ71AFI
Contextual Info: BUZ71A BUZ71AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS R DS on ID BUZ71A BUZ71AFI 50 V 50 V < 0.12 Ω < 0.12 Ω 16 A 11 A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

Contextual Info: SGS-THOMSON BUZ71A BUZ71AFI M N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V dss R d S on Id BUZ71A BUZ71 AFI 50 V 50 V 0.1 2 il 0.1 2 Q 16 A 11 A . • . . . ■ . AVALANCHE RU G G EDN ESS TECHNO LO G Y 100% AVALANCHE TESTED REPETITIVE AVALANC HE DATA AT 100°C

buz71

Abstract: BUZ71A
Contextual Info: BUZ71, BUZ71A f T S B c o n ix in c o r p o r a te d N-Channel Enhancement Mode Transistors TO-22QAB TOP VIEW o PRODUCT SUMMARY PART NUMBER V BR DSS r DS(ON) •d (V) (n ) (A) BUZ71 50 0.10 14 BUZ71A 50 0.12 13 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

complementary of irf830

Abstract: IRF630 complementary irf630 irf640 irf540n irf640 IRF640 irf510 IRFP150 Irfp250 irfp460 IRF640 IRFP150N IRF610 complementary
Contextual Info: Power MOSFET Selection Trees TM N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S HUF75321P3 HUF75321S3S HUF75329D3

Contextual Info: ¿57 TYP E S G S -T H O M S O N ¡m e ra « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V BUZ71A BUZ71AFI BUZ71A b u z 7 1 AFI dss 50 V 50 V R D S o n < 0.12 < 0.12 a a Id 16 A 11 A • TYPICAL RDS(on) = 0.1 Q . . AVALANCHE RUGGED TECHNOLOGY

SSH6N80

Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
Contextual Info: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L

irf540n irf640

Abstract: IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460
Contextual Info: MOSFET Selection Trees Power MOSFET Products N-CHANNEL MOSFETs N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S

BUZ71A

Abstract: TB334
Contextual Info: BUZ71A Data Sheet December 2001 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET Features • 13A, 50V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,

Contextual Info: BUZ71A N - CHANNEL 50V - 0.1Î2 - 13A -TO-220 STripFET POWER MOSFET TYPE BUZ71 A V R D S o n Id < 0.12 Q. 13 A dss 50 V . • TYPICAL RDS(on) =0.1 AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . HIGH CURRENT CAPABILITY . 175°C OPERATING TEMPERATURE

BUZ71

Abstract: BUZ71A TB334 TO 220AB Mosfet TA9770 transistor buz71a
Contextual Info: BUZ71A Semiconductor Data Sheet 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET October 1998 File Number 2419.1 Features • 13A, 50V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.120Ω (BUZ71 field effect transistor designed for applications such as

Contextual Info: BUZ71A S em iconductor Data Sheet June 1999 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET File Number 2419.2 Features • 13A, 50V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,

transistor buz71a

Abstract: BUZ71A TB334
Contextual Info: BUZ71A Data Sheet June 1999 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET Features This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching

Contextual Info: BUZ71A Data Sheet 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET June 1999 File Number 2419.2 Features • 13A, 50V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.120Ω (BUZ71 field effect transistor designed for applications such as

Contextual Info: *57 SGS-THOMSON iLiOM iQ £I buz7ia BUZ71AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V dss R DS(on) Id BUZ71A BUZ71AFI 50 V 50 V < 0.12 a < 0.12 a 16 A 11 A • . . ■ ■ . ■ TYPICAL RDS(on) = 0.1 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

BUZ71A

Abstract: 0120S
Contextual Info: in t e is il BUZ71A Data Sheet June 1999 13A, 50V, 0.120 Ohm, N -Channel Power M O SFET File Num ber 2419.2 Features • 13A, 50V This is an N-Channel enhancem ent mode silicon gate power field effect transistor designed for applications such as • rDS ON ~ 0.120S2

BUZ71A

Abstract: BUZ71
Contextual Info: BUZ71A O HARRIS N -Channel Enhancem ent-M ode Power Field-Effect Transistor August 1991 Package Features T0-220AB • 13A, 50V TO P VIEW • rD S on = 0 -1 2 f l • SOA is Power-Dissipation Limited DRAIN (FLANGE) • Nanosecond Switching Speeds u • Linear Transfer Characteristics

buz71a

Contextual Info: PowerMOS transistor _ N AMER PHILIPS/DISCRETE OLE D BUZ71A • hhS3131 D D m M C H 5 ■ T-3 1 - 1/ May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies