BUZ71A ST Search Results

BUZ71A

Contextual Info: BUZ71A N - CHANNEL 50V - 0.1Ω - 13A TO-220 STripFET POWER MOSFET TYPE BUZ71A • ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.12 Ω 13 A TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE

BUZ71A

Abstract: BUZ71AFI
Contextual Info: BUZ71A BUZ71AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS R DS on ID BUZ71A BUZ71AFI 50 V 50 V < 0.12 Ω < 0.12 Ω 16 A 11 A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

BUZ71A

Abstract: BUZ71AFI
Contextual Info: BUZ71A BUZ71AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS R DS on ID BUZ71A BUZ71AFI 50 V 50 V < 0.12 Ω < 0.12 Ω 16 A 11 A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

buz71

Abstract: BUZ71A
Contextual Info: BUZ71, BUZ71A f T S B c o n ix in c o r p o r a te d N-Channel Enhancement Mode Transistors TO-22QAB TOP VIEW o PRODUCT SUMMARY PART NUMBER V BR DSS r DS(ON) •d (V) (n ) (A) BUZ71 50 0.10 14 BUZ71A 50 0.12 13 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

Contextual Info: ¿57 TYP E S G S -T H O M S O N ¡m e ra « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V BUZ71A BUZ71AFI BUZ71A b u z 7 1 AFI dss 50 V 50 V R D S o n < 0.12 < 0.12 a a Id 16 A 11 A • TYPICAL RDS(on) = 0.1 Q . . AVALANCHE RUGGED TECHNOLOGY

Contextual Info: , One, TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 BUZ71 BUZ71A Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FETs 12 AMPERES •DSIon) 0.12 OHMS 60 VOLTS

BUZ71A

Abstract: TB334
Contextual Info: BUZ71A Data Sheet December 2001 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET Features • 13A, 50V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,

Contextual Info: BUZ71A N - CHANNEL 50V - 0.1Î2 - 13A -TO-220 STripFET POWER MOSFET TYPE BUZ71 A V R D S o n Id < 0.12 Q. 13 A dss 50 V . • TYPICAL RDS(on) =0.1 AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . HIGH CURRENT CAPABILITY . 175°C OPERATING TEMPERATURE

BUZ71

Abstract: BUZ71A TB334 TO 220AB Mosfet TA9770 transistor buz71a
Contextual Info: BUZ71A Semiconductor Data Sheet 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET October 1998 File Number 2419.1 Features • 13A, 50V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.120Ω (BUZ71 field effect transistor designed for applications such as

Contextual Info: BUZ71A S em iconductor Data Sheet June 1999 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET File Number 2419.2 Features • 13A, 50V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,

buz71a

Contextual Info: PowerMOS transistor _ N AMER PHILIPS/DISCRETE OLE D BUZ71A • hhS3131 D D m M C H 5 ■ T-3 1 - 1/ May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

ta9770

Abstract: transistor buz71a BUZ71A TB334 cip soa rl
Contextual Info: BUZ71A Semiconductor June 1999 Data Sheet 13A, 50 V, 0.120 Ohm, N-Channel Power MOSFET File Number 2419.2 Features • 13A, 50V T his is an N -C hannel e n h a n ce m e n t m ode silicon ga te pow er field effect tra n sisto r de sig n e d for ap plicatio ns such as

552 MOSFET TRANSISTOR motorola

Abstract: 552 transistor motorola Z71A
Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA BUZ71 BUZ71A Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FETs 12 AMPERES RDS on = 0.10 and 0.12 OHMS 50 VOLTS T h e s e T M O S III P o w e r FETs a re d e s ig n e d f o r lo w

BUZ71

Abstract: buz71a SM 71A diode BUZ-71A BUZ71 Siliconix
Contextual Info: Tem ic BUZ71/71A Siliconix N-Channel Enhancement-Mode Transistors Product Summary P a rt N um ber V BR DSS 0 0 ri)S(on) (& ) I d (A) BU Z71 50 0.10 14 B U Z 71A 50 0.12 13 D TO-22QAB P o DRAIN connected to TAB U U U ^ G D S S Top View N-Channel M OSFET Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)

BUZ171 circuit

Abstract: varistor 10k 391 1045 pin out data BUZ17 GE V24ZA50 transistor buz71a 24V relay buz171 BUZ171 equivalent CD4016 equivalent
Contextual Info: LTC1045 Programmable Micropower Hex Translator/ Receiver/Driver U FEATURES • ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Efficiently Translate Voltage Levels Internal Hysteresis for Noise Immunity Output Latches Included Three-State Outputs Programmable Power/Speed

BUZ10A

Abstract: ISOWATT-220 TO-220 MOS MTP15N05L MTP3055A SGSP382 SGSP222 BUZ10 SGSP492 sgsp482
Contextual Info: SCS‘THOMSON GENERAL PURPOSE & INDUSTRIAL POWER MOS SOT 82 TO 3 TO 240 ISOTOP : STANDARD VERSION Internal schematic diagrams ISOTOP: FASTON VERSION Without final «V» in the sales type D o D G O- Ò S POWER MOS HIMOS (IGBT) V(BR) DSS RDS(on) max (V) (0)

BUZ171 application note

Abstract: "Bar-Graph Display" Driver 16 DIP transistor buz71a BUZ171 BUZ171 circuit varistor 10007 Varistor 391 10k LTC1045 LTC1045CJ LTC1045CN
Contextual Info: LTC1045 Programmable Micropower Hex Translator/ Receiver/Driver U FEATURES • ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Efficiently Translate Voltage Levels Internal Hysteresis for Noise Immunity Output Latches Included Three-State Outputs Programmable Power/Speed

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

SSH6N80

Abstract: IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent
Contextual Info: Power MOSFETs Cross Reference INDUSTY STANDARD 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205

MTP3055A

Abstract: MTM12N06 mtp25n06 MTM20N08 irf150 MTH8P20 MTM35N05 MTP2P45 MTM10N05 BUZ11
Contextual Info: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 @ ID VBR(DSS) (Volts) Min (Ohms) Max (Amp) 100 0.055 20 0.04 27.5 0.5 4 80 rDS(on) Device 0.4 40 150 55 250 MTM8N08 8 75 0.33 5 MTM10N08

SMP16P06

Abstract: SMM14N65 SMW60N06-18 SMP25N06 SMW60N10 SMP60N06-18 MDD100B SMM24N40 SMM40N20 SMV1P06
Contextual Info: CXSiliconix in c o r p o r a te d Selector Guide Plastic Packages N-Channel Cont’d N-Channel V(BÇDSS (A) Part Number >d s ( o n ) (Û ) V(BRJDSS r D S(O N ) Id (A) ( il) Part Number 650 5.8 1.5 VNT008D1 50 30 0.040 650 5.0 2.0 VNT009D1 50 25 0.060 BUZ11A1

mosfet cross reference

Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
Contextual Info: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local

std2n52

Abstract: stp3n60 STE38NA50 *D2N52 FTP5021-0 TO220 STP60NE06-16 STD2NB60 STP3N60FI STD12NE06 stp7nb20
Contextual Info: TRANSISTORS POWER MOSFETS POWER MOS 2 1 2 3 3 1 ISOTOPTM DPAK D2PAK IPAK SOT-82 SOT-223 1 TO-220 ISOWATT 220TM / TO-220FP Fully isolated MAX220TM ISOWATT 218TM (Fully isolated) TO-247 MAX247TM Internal schematic diagrams POWER MOS Sales Type STB80NE03L-06

Bow94c

Abstract: MTP3055A IRFZ22 mosfet b0334 BUZ11 SGSP222 BUZ10 STVHD90 SGS137 SGSD93G
Contextual Info: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80