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    BUZ103S Search Results

    BUZ103S Datasheets (22)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    BUZ103S
    		Infineon Technologies SIPMOS Power Transistor Original PDF 123.92KB 8
    BUZ103S
    		Siemens Original PDF 1.09MB 7
    BUZ103S
    		Siemens SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175°C operating temperature) Original PDF 120.57KB 8
    BUZ103S
    		Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    BUZ103S-4
    		Infineon Technologies SIPMOS Power Transistor Original PDF 91.99KB 8
    BUZ103S-4
    		Siemens SIPMOS Power Transistor Scan PDF 342.42KB 8
    BUZ103S-E3045
    		Infineon Technologies SIPMOS Power Transistor Original PDF 123.92KB 8
    BUZ103SE3045
    		Infineon Technologies SIPMOS Power Transistor Scan PDF 606.66KB 14
    BUZ103SE3045A
    		Infineon Technologies N-Channel SIPMOS Power Transistor Original PDF 123.91KB 8
    BUZ103S-E3045A
    		Infineon Technologies Transistor Mosfet N-CH 55V 31A 3P-TO263-3-2 T/R Original PDF 123.92KB 8
    BUZ103SE3045A
    		Infineon Technologies SIPMOS Power Transistor Scan PDF 606.66KB 14
    BUZ103SL
    		Infineon Technologies SIPMOS Power Transistor Original PDF 122.26KB 8
    BUZ103SL
    		Siemens Original PDF 1.09MB 7
    BUZ103SL
    		Siemens SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated) Original PDF 118.84KB 8
    BUZ103SL
    		Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    BUZ103SL-4
    		Infineon Technologies SIPMOS Power Transistor Original PDF 109.06KB 8
    BUZ103SL-4
    		Siemens SIPMOS Power Transistor Scan PDF 383.73KB 8
    BUZ103SL-E3045
    		Infineon Technologies SIPMOS Power Transistor Original PDF 122.26KB 8
    BUZ103SLE3045
    		Infineon Technologies SIPMOS Power Transistor Scan PDF 612.42KB 14
    BUZ103SLE3045A
    		Infineon Technologies N-Channel SIPMOS Power Transistor Original PDF 122.26KB 8
    SF Impression Pixel

    BUZ103S Price and Stock

    Select Manufacturer

    Siemens BUZ103S

    Trans MOSFET N-CH 55V 31A 3-Pin(3+Tab) TO-220 Tube
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics BUZ103S 153 1
    • 1 $2.92
    • 10 $2.19
    • 100 $1.81
    • 1000 $1.46
    • 10000 $1.46
    		Buy Now
    Quest Components BUZ103S 122
    • 1 $3.90
    • 10 $3.90
    • 100 $1.46
    • 1000 $1.36
    • 10000 $1.36
    		Buy Now

    Siemens BUZ103SL

    28 A, 55 V, 0.044 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components () BUZ103SL 1,200
    • 1 $2.34
    • 10 $2.34
    • 100 $2.34
    • 1000 $0.82
    • 10000 $0.82
    		Buy Now
    BUZ103SL 400
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Infineon Technologies AG BUZ103SE3045A

    Power Field-Effect Transistor, 31A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian BUZ103SE3045A 286
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    BUZ103S Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    smd transistor marking 7j

    Abstract: TRANSISTOR SMD MARKING CODE c015 TRANSISTOR SMD MARKING CODE BS s BUZ103S E3045 Q67040-S4009-A2 diode marking code MU marking 684 diode smD
    Contextual Info: Infineon BUZ103S ,y e d Rosi0"' ’ technologie» im p f SIPMOS® Power Transistor Features Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance ñ D S o n • Avalanche rated Continuous drain current


    OCR Scan     		buz103sp-t0220-3-1q67040-s4009-a2e3045a+8p-t0263-3-2q67040-s4009-a6e3045smd transistor marking 7jtransistor smd marking code c015transistor smd marking code bs sdiode marking code mumarking 684 diode smd PDF

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		stp7nb40stt3pf30lstd20ne03lstp60ne03l-12+14stp60ne03l-10stp40nf03lstp80ne03l-06sts4dpf30lfqp60n06spb32n03lrfp60n06ssh6n80fqp50n10fsd6680stp55nf06 and its equivalentsfp70n03hgtg*n60a4dirf630 irf640 PDF

    Spice Model for TMOS Power MOSFETs

    Abstract: scr spice model n mosfet depletion pspice model parameters transistor SMD making code 3f MOTOROLA smd SCR 707n AN1043 1E12 ABM11 BUZ103S
    Contextual Info: A Hierarchical Cross-Platform Physics Based MOSFET Model for SPICE and SABER By Jon Mark Hancock Siemens Microelectronics ABSTRACT A physics based MOSFET subcircuit model has been developed and implemented for SABER and several SPICE platforms, including PSPICE, IS-SPICE, and S-SPICE. The model is hierarchical in


    Original     		spice model for tmos power mosfetsscr spice modeln mosfet depletion pspice model parameterstransistor smd making code 3f+6motorola smd scr707nan10431e12abm11buz103s PDF

    IRF540 complementary

    Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
    Contextual Info: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3


    Original     		rfp6n50rfd16n03lsmrfp15n05lrfp50n05+16rfp15n05rfp50n05lrfd14n05lrfd14n05lsmrfd14n05smrfp14n05lirf540 complementaryirfz44n complementarystd2n52toshiba irfz44a datasheetstp2na60ssh6n80rfp60n06ste38na50irf630 complementaryirf3205 ir PDF

    103S

    Abstract: BUZ103S E3045 Q67040-S4009-A2
    Contextual Info: BUZ 103S SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.036 Ω Continuous drain current ID Enhancement mode • Avalanche rated 55 V 31 A • dv/dt rated • 175 ˚C operating temperature


    Original     		buz103sp-to263-3-2q67040-s4009-a6e3045+4p-to220-3-1q67040-s4009-a2e3045a103s PDF

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		2n70002n70022sj3772sj378+162sj3802sj4012sj4022sj4072sj4122sj419yta630mtw14p20bss125mtaj30n06hd2sk2837 equivalentsmu10p05smp60n06 replacementste180n10rfh75n05eirfd620 PDF

    TLE5205 cross

    Abstract: tle6205 c167 ecu ECU PWM Throttle Position Sensor TLE6209 Electronic accelerator pedal automotive ecu circuit TLE5206 Different types of PWM ICs
    Contextual Info: System Engineering Automotive Application Note Throttle Control with Smart Power Bridges Microcontrollers of the C500 and the C16x-families. and This application note shows different solutions for electronic throttle control with components of Infineon Technologies.


    Original     		c16x-familiestle5205 crosstle6205c167 ecu+7ecu pwmthrottle position sensortle6209electronic accelerator pedalautomotive ecu circuittle5206different types of pwm ics PDF

    SSH6N80

    Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
    Contextual Info: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L


    Original     		buz10buz11buz11abuz71+16buz71abuz72abuz80airf520irf530irf540ssh6n80rfp60n06irf3205 irbuk417-500aesfp70n03buz91a2sk2717stmicroelectronicsbuz22ixfh13n50 PDF

    Q67040-S4008-A2

    Abstract: BUZ103SL E3045 Q67040-S4008-A6 Q67040-S4008-A5
    Contextual Info: BUZ 103SL SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.026 Ω Continuous drain current ID Enhancement mode • Avalanche rated 55 V 28 A • Logic Level • dv/dt rated


    Original     		103slbuz103slp-to263-3-2q67040-s4008-a6+5e3045p-to220-3-1q67040-s4008-a2e3045aq67040-s4008-a5 PDF

    2N5101

    Abstract: BUY46 BUW32 BUS13A BUV21 ISO BUZ171 equivalent BUY22 BUT51P BUX23 BUT13P
    Contextual Info: STI Type: 2N5050 Notes: Polarity: NPN Power Dissipation: 40 VCBO: 125 VCER: 125 ICBO: 125 ICBO ua: 500 hFE: 25 hFE A: 1.0 VCE: 1.0 VBE: 1.2 IC A: .75 COB: 250 fT: 10 Case Style: TO-213AA/TO-66 Industry Type: 2N5050 STI Type: 2N5052 Notes: *BVCEO Polarity: NPN


    Original     		2n5050o-213aa/to-662n50522n5055+12o-206aa/to-182n50562n5101buy46buw32bus13abuv21 isobuz171 equivalentbuy22but51pbux23but13p PDF

    D1N5226

    Abstract: D1N4750 1N5226 pspice D1N5242 D1N5227 SCHEMATIC circuit scr H-Bridge scr driver dc motor speed control H-bridge simulation dc motor speed control using scr driver 2n2222a spice model
    Contextual Info: PRODUCT APPLICATIONS Using Current Sense PROFETs and Speed TEMPFETs in a High Current H-Bridge Motor Driver A high power bridge driver can be constructed from Smart SIPMOS high side and low side switches. Design issues are addressed, including the use of simulation


    Original     		150us200us250us300us+14350us400us450usdriver13d1n5226d1n47501n5226 pspiced1n5242d1n5227schematic circuit scr h-bridgescr driver dc motor speed controlh-bridge simulationdc motor speed control using scr driver2n2222a spice model PDF

    smd transistor marking dj

    Abstract: SMD Transistor PIT BUZ103SL E3045 Q67040-S4008-A2 P-T0263-3-2
    Contextual Info: ,•— BUZ 103SL Infineon \m p fO ',c d l w • e fi n o I o g I e $ ’ SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage Vds • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current


    OCR Scan     		buz103slp-t0220-3-1q67040-s4008-a2e3045a+6p-t0263-3-2q67040-s4008-a6bu2103sle3045smd transistor marking djsmd transistor pit PDF

    fqp60n06

    Abstract: SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30
    Contextual Info: 电子元器件系列 wwww.rf-china.com RF-Micom co.,Ltd EMail:sales@rf-china.com Sale Phone:86-592-5713956 MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL


    Original     		stp7nb40stt3pf30lstd20ne03lstp60ne03l-12+14stp60ne03l-10stp40nf03lstp80ne03l-06sts4dpf30lfqp60n06ssh6n80spb32n03lsmp60n03-10lssp80n06airf540 applicationrfp60n06fsd9933a2sk790irfz30 PDF