103SL Search Results

BUZ 326

Contextual Info: BUZ 103SL-4 Preliminary data SIPMOS Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated Type VDS ID RDS on Package Ordering Code BUZ 103SL-4 55 V 4.8 A 0.055 Ω P-DSO-28 C67078-S. . . .- . . Maximum Ratings

Contextual Info: TELECOMMUNICATIONS TRANSFORMERS FCC PART 68 L File N o“s. 138028 142035 « File No. L R 1383 "ta m u ra M1CROTRAIU, Coupling, Hybrid, Voice, and Data Applications. PCMCIA V.32 & V.34 MODEM APPLICATIONS 8.38 0.33 ' 10.2(0.40) y 4.16(0.164) TTC-103SL TTC-203SL

diode zd 48

Contextual Info: SIEMENS BUZ 103SL-4 Preliminary data SIPMOS Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • d v/d t rated Type ^DS BUZ 103SL-4 55 V 4.8 A f f DS on Package Ordering Code 0.055 £1 P-DSO-28 C67078-S. . . . . . .

Q67040-S4008-A2

Abstract: BUZ103SL E3045 Q67040-S4008-A6 Q67040-S4008-A5
Contextual Info: BUZ 103SL SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.026 Ω Continuous drain current ID Enhancement mode • Avalanche rated 55 V 28 A • Logic Level • dv/dt rated

smd transistor marking dj

Abstract: SMD Transistor PIT BUZ103SL E3045 Q67040-S4008-A2 P-T0263-3-2
Contextual Info: ,•— BUZ 103SL Infineon \m p fO ',c d l w • e fi n o I o g I e $ ’ SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage Vds • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current

Contextual Info: Part Number Index J M C P a rt N u m b e r J M C P a rt N u m b e r Page J M C P a rt N u m b e r Page J M C P a rt N u m b e r Page 2320-0 . 4 9 3 4 2 -1 R8 . 14 9401-0 .6 9612 . 10 2 3 2 0 -OSL . 4 9 3 4 2 -2R8 .14

BUZ MOSFET

Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
Contextual Info: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8

4279g

Abstract: G52E111 G74B111 ET-46 microtran t5115 IFS-0505 TTC05 TTC 103 2PC 502 m 8044
Contextual Info: ~tamura Product Number Index MICROTRAIM, Part No. Page Part No. Page 1 0A 006 20 3FD -348 18 Part No. 3FS -2120 Page 18 630A4201 33 A K S 25-12 39 DCM 4-PC 10A 007 20 3FD -356 18 3FS -216 18 630 A 4 3 0 4 33 A K S 25-15 39 DCM 5-PC 6 1 0A 008 20 3FD -410 18

Contextual Info: REV. S ta tu s IS SU E 1 1 1 / 1 8 / 9 4 TS IS SU E 2 T.H.D. -8 2 d B 7YP WAS —7 6 d B MAX UPDATED AGENCY A PPRO VALS AND DIMENSIONS 1 1 / 1 8 / 9 4 TS IS SU E 3 ADDED P /N TSL10 3 0 8 / 2 1 / 9 7 TS SURFACE MOUNT TELECOMMUNICATION TRANSFORMER A. Electrical specifications @ 25 ° C

TTC 103

Abstract: TTC-103SL TSL-103 CSA-C22 TSL103
Contextual Info: REV. S ta tu s ISSUE 1 1 1 / 1 8 / 9 4 TS ISSUE 2 T.H.D. —82 d B TYP WAS —7 6 d B MAX UPDATED AGENCY APPROVALS AND DIMENSIONS 1 1 / 1 8 / 9 4 TS ISSUE 3 AD D ED P /N T S L103 0 8 / 2 1 / 9 7 TS SURFACE MOUNT TELECOMMUNICATION TRANSFORMER A. Electrical specifications 25 ° C

BUZ MOSFET

Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
Contextual Info: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package