BU125 Search Results

BU606D

Abstract: BU606 BU608D BUY18S 2N341B BSW68 2N4895 2N5154 2N5415 sis 650
Contextual Info: CRIMSON SEMICO ND UC TO R INC 2514096 CRIMSON SSlMtHt. D O Q O B B b 2 | Ti SEMICONDUCTOR 1 99D 00336 IN C D T '33 ' J EPITAXIAL PLANAR - TO-39 PNP NPN BFX34 BSS44 BSW67 BSW68 BU125 BU125S BUY47 BUY48 BUY49S BUY68 2N341B 2N3419 2N3420 2N3421 2N3439 2N3440

2N5415

Contextual Info: C R I M S O N S E M I C O N D U C T O R INC D e | SSm CHti 00Q033L Ti 2514096 CRIMSON SEMICONDUCTOR 99 D 0 0 3 3 6 INC D T'33 ' J EPITAXIAL PLANAR - TO-39 PN P NPN BFX34 BSS44 BSW67 BSW68 BU125 BU125S BUY47 BUY48 BUY49S BUY68 2N341B 2N3419 2N3420 2N3421

Contextual Info: r z 7 S C S -T H O M S O N “ 7# BU125S M ^ m iO ïïlïM O û S HIGH VOLTAGE POWER AMPLIFIER D E S C R IP T IO N The BU125S is a silicon epitaxial planar NPN tran­ sistor in Jedec T O -3 9 metal case. It is intended for general purpose, linear and switching applications.

BU125S

Contextual Info: 0056505 1 • H^3>3-C>7 S G S - T H O M S O N M0œ m i ( m K S S 6 S-TH0MS0N B U 125S 30E D HIGH VOLTAGE POWER AMPLIFIER DESCRIPTION The BU125S is a silicon epitaxial planar NPN tran­ sistor in Jedec TO-39 metal case. It is intended for general purpose, linear andswitching applications.

BU606

Abstract: bu606d 2N5415
Contextual Info: EPITAXIAL PLANAR - TO-39 PNP NPN BFX34 BSS44 BSW67 BSW68 B U125 BU125S BUY47 BUY48 BUY49S BUY68 2N3418 2N3419 2N3420 2N3421 2N3439 2N3440 2N3867 2N3868 2N4150 2N4234 2N4235 2N4236 2N4237 2N4238 2N4239 2N4895 2N4896 2N4897 2N5152 2N5154 2N5336 2N5337 2N5338

BU125

Abstract: se 130 n
Contextual Info: SGS-mOMSON SMO g[i? iHi Tr^®iD(SÌ B U 125 HIGH CURRENT, GENERAL PURPOSE TRANSISTOR D E S C R IP T IO N The BU125 is a silicon epitaxial planar NPN transistor in Jedec T O -3 9 metal case. It is used in switching output and general purpose applica­ tions.

BU125

Abstract: BU125S
Contextual Info: 1 3 2 ^ 23 7 r r z ^ 7# 0026501 H • T*-3>3-07 S C S -T H O M S O N IRaDO ^IILIlOir^^lOOl_ S G S-TH0MS0N B U 125 30E D _ HIGH CURRENT, GENERAL PURPOSE TRANSISTOR D ESC RIPTIO N The BU125 is a silicon epitaxial planar NPN transistor in Jedec TO -39 metal case. It is used

Contextual Info: BU125 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)130 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)800m Maximum Operating Temp (øC)175 I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

bu125

Abstract: C101 SN74CB3Q3125 SN74CB3Q3125DBQR SN74CB3Q3125PW SN74CB3Q3125RGYR
Contextual Info: SN74CB3Q3125 QUADRUPLE FET BUS SWITCH 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH www.ti.com SCDS143B – OCTOBER 2003 – REVISED MARCH 2005 FEATURES • • • • • • • • • High-Bandwidth Data Path up to 500 MHz (1 5-V Tolerant I/Os With Device Powered Up or

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

C101

Abstract: SN74CB3Q3125 SN74CB3Q3125DBQR SN74CB3Q3125PW SN74CB3Q3125RGYR
Contextual Info: SN74CB3Q3125 QUADRUPLE FET BUS SWITCH 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH www.ti.com SCDS143B – OCTOBER 2003 – REVISED MARCH 2005 FEATURES • • • • • • • • • High-Bandwidth Data Path up to 500 MHz (1 5-V Tolerant I/Os With Device Powered Up or

C101

Abstract: SN74CB3Q3125 SN74CB3Q3125DBQR SN74CB3Q3125PW SN74CB3Q3125RGYR
Contextual Info: SN74CB3Q3125 QUADRUPLE FET BUS SWITCH 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH www.ti.com SCDS143B – OCTOBER 2003 – REVISED MARCH 2005 FEATURES • • • • • • • • • High-Bandwidth Data Path up to 500 MHz (1 5-V Tolerant I/Os With Device Powered Up or

Contextual Info: SN74CB3Q3125 QUADRUPLE FET BUS SWITCH 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH www.ti.com SCDS143B – OCTOBER 2003 – REVISED MARCH 2005 FEATURES • • • • • • • • • High-Bandwidth Data Path up to 500 MHz (1 5-V Tolerant I/Os With Device Powered Up or

Contextual Info: SN74CB3Q3125 QUADRUPLE FET BUS SWITCH 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH www.ti.com SCDS143B – OCTOBER 2003 – REVISED MARCH 2005 FEATURES • • • • • • • • • High-Bandwidth Data Path up to 500 MHz (1 5-V Tolerant I/Os With Device Powered Up or

Contextual Info: SN74CB3Q3125 QUADRUPLE FET BUS SWITCH 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH www.ti.com SCDS143B – OCTOBER 2003 – REVISED MARCH 2005 FEATURES • • • • • • • • • High-Bandwidth Data Path up to 500 MHz (1 5-V Tolerant I/Os With Device Powered Up or

Contextual Info: SN74CB3Q3125 QUADRUPLE FET BUS SWITCH 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH www.ti.com SCDS143B – OCTOBER 2003 – REVISED MARCH 2005 FEATURES • • • • • • • • • High-Bandwidth Data Path up to 500 MHz (1 5-V Tolerant I/Os With Device Powered Up or

C101

Abstract: SN74CB3Q3125 SN74CB3Q3125DBQR SN74CB3Q3125PW SN74CB3Q3125RGYR BU125
Contextual Info: SN74CB3Q3125 QUADRUPLE FET BUS SWITCH 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH www.ti.com SCDS143B – OCTOBER 2003 – REVISED MARCH 2005 FEATURES • • • • • • • • • High-Bandwidth Data Path up to 500 MHz (1 5-V Tolerant I/Os With Device Powered Up or

mje520

Abstract: SGS1F444 SGSD00030 e13008 BUT23 2m3771 BUT62 BUW42AP 2n5337 BUW32AP
Contextual Info: S E L E C T IO N G U ID E B Y P A C K A G E GENERAL PURPOSE TRANSISTO RS SO T-32 P 4 Complemen­ hFE«* 'c A VCE (V) “CEsat » 'c (A) (V) BD434 MJE210 MJE370 BD436 2N4918 2N5193 50 70 25 50 30 25 2.00 0.50 1.00 2.00 0.50 1.50 1.0 1.0 1.0 1.0 1.0 2.0 0.50

Texas Instruments TTL

Abstract: ALVC16425 CD4066B spice model LVT - Low-Voltage BiCMOS Technology working principle of ic cd4066 CD4054B SCHEMATIC AND PIN DETAILS TI audio squelch can CU384A CD4053 spice MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Contextual Info: Signal Switch Including Digital/Analog/Bilateral Switches and Voltage Clamps Data Book Introducing Three New Bus-Switch Families S CB3Q High-Bandwidth Bus Switch S CB3T Low-Voltage Translator Bus Switch S CBT- C Bus Switch With –2-V Undershoot Protection

Contextual Info: SN74CB3Q3125 QUADRUPLE FET BUS SWITCH 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH www.ti.com SCDS143B – OCTOBER 2003 – REVISED MARCH 2005 FEATURES • • • • • • • • • High-Bandwidth Data Path up to 500 MHz (1 5-V Tolerant I/Os With Device Powered Up or

DK53

Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513
Contextual Info: BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240

TRANSISTOR DATASHEET D1555

Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440

C101

Abstract: SN74CB3Q3125 SN74CB3Q3125DBQR SN74CB3Q3125PW SN74CB3Q3125RGYR
Contextual Info: SN74CB3Q3125 QUADRUPLE FET BUS SWITCH 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH www.ti.com SCDS143B – OCTOBER 2003 – REVISED MARCH 2005 FEATURES • • • • • • • • • High-Bandwidth Data Path up to 500 MHz (1 5-V Tolerant I/Os With Device Powered Up or