BISCR Search Results

Contextual Info: N AUER PHILIPS/BISCRETE bRE D bb53331 □□30630 804 B A P X Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope

BGY41

Abstract: BGY41B BGY41A
Contextual Info: N AMER PHILIPS/BISCRETE I 86D 0 1 0 1 4 ObE D bbS3.131 0Q132SS M P T -w -d q -o r BGY40A BGY41A J _ BGY40B BGY41B U.H.F. POWER AMPLIFIER MODULES A range of broadband u.h.f. modules, primarily designed for mobile communication equipment, operating directly from 12 V electrical systems.

Contextual Info: • ^ 5 3 ^ 3 1 0024E>05 556 BIAPX N AMER PHILIPS/BISCRETE b7E D J BCX51 BCX52 BCX53 V SILICON PLANAR EPITAXIAL TRANSISTORS Medium power p-n-p transistors in a miniature plastic envelope intended fo r applications in thick and thin-film circuits. These transistors are intended for general purposes as well as fo r use in driver stages

Contextual Info: i_L N AUER PHILIPS/BISCRETE DbE D • bbS3T31 QOlSlb? 1 RV2833B5X r - 3 3 - D MICROWAVE POWER POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier, operating in the 2.8 to 3.3 GHz frequency range.

BJE 42

Contextual Info: Philips Sem iconductors bbS B TB l Q03QQ16 TST IM A P X Product specification VHF power MOS transistor BLF277 N AnER PHILIPS/BISCRETE FEATURES b*E ]> PIN CONFIGURATION • High power gain • Easy power control • Gold metallization ensures excellent reliability

100-BT

Contextual Info: TLK100 www.ti.com SLLS931B – AUGUST 2009 – REVISED DECEMBER 2009 Industrial Temp, Single Port 10/100 Mb/s Ethernet Physical Layer Transceiver Check for Samples: TLK100 1 Introduction 1.1 Features 1 • • • • • • • • • • • • Temperature From –40°C to 85°C

IEEE1588

Abstract: VD11
Contextual Info: TLK100 www.ti.com SLLS931B – AUGUST 2009 – REVISED DECEMBER 2009 Industrial Temp, Single Port 10/100 Mb/s Ethernet Physical Layer Transceiver Check for Samples: TLK100 1 Introduction 1.1 Features 1 • • • • • • • • • • • • Temperature From –40°C to 85°C

S03-400

Abstract: BMS-R 0X0043 TLK110PT s0340
Contextual Info: TLK110 SLLS901 – DECEMBER 2011 www.ti.com Industrial Temp, Single Port 10/100Mbs Ethernet Physical Layer Transceiver Check for Samples: TLK110 1 Introduction 1.1 Features 1 • Low Power Consumption: <205mW PHY and 275mW with Center Tap Typical • Cable Diagnostics

Contextual Info: TLK105L TLK106L www.ti.com SLLSEE3A – AUGUST 2013 – REVISED NOVEMBER 2013 Industrial Temp, Single Port 10/100Mbs Ethernet Physical Layer Transceiver Check for Samples: TLK105L, TLK106L 1 Introduction 1.1 Features 1 • IEEE 1588 SFD indication enables time

Contextual Info: TLK111 www.ti.com SLLSEF8A – AUGUST 2013 – REVISED NOVEMBER 2013 TLK111 PHYTER Industrial Temperature 10/100Mbs Ethernet Physical Layer Transceiver Check for Samples: TLK111 1 Introduction 1.1 Features 123456 • Fully Pin Compatible with the TLK110 Device

Contextual Info: it N AFTER PHILIPS/DISCRETE 2SE I> bb53T31 001A7S1 3 • BUS23 SERIES T - 2 3 -'IS' SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in aTO-3 envelope, intended fo r use in converters, inverters, switching regulators, motor control systems etc.

Contextual Info: N AMER PHILIPS/DISCRETE bTE ]> b b s a ^ l □□2883'! 3bl I IAPX BLU45/12 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-119 envelope primarily intended for use in mobile radio transmitters in the 470 MHz communications band. Features

Contextual Info: N AUER PHILIPS/DISCRETE bSE ]> bbS 3T31 0 0 30 7B 0 45= • APX Philips Semiconductors Product Specification Pow erM OS transistor Logic level FET_ G E N E R A L D E S C R IP T IO N N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

Contextual Info: TLK105L TLK106L www.ti.com SLLSEE3 – AUGUST 2013 Industrial Temp, Single Port 10/100Mbs Ethernet Physical Layer Transceiver Check for Samples: TLK105L, TLK106L 1 Introduction 1.1 Features 1 • IEEE 1588 SFD indication enables time stamping by a controller or processor

Contextual Info: TLK100 www.ti.com SLLS931B – AUGUST 2009 – REVISED DECEMBER 2009 Industrial Temp, Single Port 10/100 Mb/s Ethernet Physical Layer Transceiver Check for Samples: TLK100 1 Introduction 1.1 Features 1 • • • • • • • • • • • • Temperature From –40°C to 85°C

Contextual Info: TOSHIBA {DISCRETE/OPTO} 3T 39C SEMICONDUCTOR 01861 D E | C] 0 C1 7 E S 0 □□□Iflbl * 2 : h 7 V&7.» TO SH IBA TR A N SIST O R 2 S O 5 5 1 TECHNICAL DATA SIL IC O N NPN E P IT A X IA L PLANAR a m X * o % t i m e ra v h f æ IN D U S T R IA L A P P L IO A T IO N

Contextual Info: TLK105 TLK106 www.ti.com SLLSEB8 – AUGUST 2012 Industrial Temp, Single Port 10/100Mbs Ethernet Physical Layer Transceiver Check for Samples: TLK105, TLK106 1 Introduction 1.1 Features 1 • Low Power Consumption: <205mW PHY and 275mW with Center Tap Typical

tag 8514

Abstract: COR11 0X0174 TLK105
Contextual Info: TLK105 TLK106 www.ti.com SLLSEB8 – AUGUST 2012 Industrial Temp, Single Port 10/100Mbs Ethernet Physical Layer Transceiver Check for Samples: TLK105, TLK106 1 Introduction 1.1 Features 1 • Low Power Consumption: <205mW PHY and 275mW with Center Tap Typical

Contextual Info: TLK105L TLK106L www.ti.com SLLSEE3B – AUGUST 2013 – REVISED JANUARY 2014 Industrial Temp, Single Port 10/100Mbs Ethernet Physical Layer Transceiver Check for Samples: TLK105L, TLK106L 1 Introduction 1.1 Features 12 • Low Power Consumption: – Single Supply: <205mW PHY, 275mW with

Contextual Info: TLK105L TLK106L www.ti.com SLLSEE3 – AUGUST 2013 Industrial Temp, Single Port 10/100Mbs Ethernet Physical Layer Transceiver Check for Samples: TLK105L, TLK106L 1 Introduction 1.1 Features 1 • IEEE 1588 SFD indication enables time stamping by a controller or processor

Contextual Info: TLK105L TLK106L www.ti.com SLLSEE3B – AUGUST 2013 – REVISED JANUARY 2014 Industrial Temp, Single Port 10/100Mbs Ethernet Physical Layer Transceiver Check for Samples: TLK105L, TLK106L 1 Introduction 1.1 Features 12 • Low Power Consumption: – Single Supply: <205mW PHY, 275mW with

tda 8268

Contextual Info: TLK105L TLK106L www.ti.com SLLSEE3 – AUGUST 2013 Industrial Temp, Single Port 10/100Mbs Ethernet Physical Layer Transceiver Check for Samples: TLK105L, TLK106L 1 Introduction 1.1 Features 1 • IEEE 1588 SFD indication enables time stamping by a controller or processor

tam 0340

Contextual Info: b b 53^31 Philips Semiconductors □ □ 31 S 7 S TEb H A P X Product specification PNP 5 GHz wideband transistor 1 DESCRIPTION « N ArlER BFQ51 p h x l x p s / d i s CRETE b 'lE » PINNING PNP transistor in a plastic SOT37 envelope. It is primarily intended for use in RF

bdx67

Abstract: transistor bdx67
Contextual Info: N AMER PHILIPS/DISCRETE E5E bL.53‘ 3> 1 Q O nW 7 • BDX67; 67A BDX67B; 67C T -3 3 -3 .7 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-3 envelope. P-N-P complements are BDX66, BDX66A,