BF998 MARKING CODE Search Results

g1 TRANSISTOR SMD MARKING CODE

Abstract: marking code ff SMD Transistor TRANSISTOR SMD MARKING CODE BS t marking code ff p SMD Transistor smd marking mop NF marking TRANSISTOR SMD c4 marking TRANSISTOR SMD nf c1 marking TRANSISTOR SMD nf c4 BF998 g1 7 TRANSISTOR SMD MARKING CODE
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification Supersedes data of April 1991 File under Discrete Semiconductors, SC07 1996 Aug 01 Philips Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs

Contextual Info: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!

TRANSISTOR mosfet BF998

Abstract: BF998 bf998 mosfet tetrode application note BF998 marking code BF998R BFP181 BFP181R 3G1 transistor
Contextual Info: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!

bf998 MOW

Abstract: marking code mow marking MOW sot143 MOW sot143 BF998B BF998B-GS08 BF998R marking MOW BF998 VISHAY BF998RAW-GS08
Contextual Info: BF998 / BF998R / BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • SOT-143 Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance

bf998

Abstract: application BF998 TRANSISTOR mosfet BF998
Contextual Info: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration

Contextual Info: BF998 / BF998R / BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • • SOT-143 Integrated gate protection diodes Low noise figure e3 Low feedback capacitance High cross modulation performance

BF998B-GS08

Abstract: NATIONAL SEMICONDUCTOR MARKING CODE sot-143 sot143 code marking MS BF998A BF998A-GS08 BF998 VISHAY application BF998 BF998RAW-GS08
Contextual Info: BF998 / BF998R / BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • • SOT-143 Integrated gate protection diodes Low noise figure e3 Low feedback capacitance High cross modulation performance

BF998

Abstract: MGA002 MGE802 bf998 Mop Dual-Gate cfs 455 j BB405 BF998R UGC469 marking code g1s
Contextual Info: Product specification Philips Semiconductors Silicon N-channel dual-gate MOS-FETs BF998; BF998R FEATURES • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz. APPLICATIONS

BF998B

Abstract: BF998 VISHAY bf998 BF998A-GS08 BF998A BF998R BF998RA BF998RAW BF998RB BF998RW
Contextual Info: BF998 / BF998R / BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • • SOT-143 Integrated gate protection diodes Low noise figure e3 Low feedback capacitance High cross modulation performance

Contextual Info: BF998 / BF998R / BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • SOT-143 Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance

BF998RAW-GS08

Contextual Info: Not for new design, this product will be obsoleted soon BF998/BF998R/BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • • Integrated gate protection diodes Low noise figure

TRANSISTOR mosfet BF998

Abstract: BF998 depletion BF998 UCB343 dual gate mosfet
Contextual Info: Philips Components D atasheet status Preliminary specification date of issue October 1990 FEATURES • Short channel transistor with high ratio lYfel/Gis. • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor

Contextual Info: bbS3T31 QQ23b34 4tl N AflER PHILIPS/DISCRETE b?E D Philips Semiconductors Data sheet status Product specification T APX BF998 date of issue April 1991 Silicon n-channel dual gate MOS-FET FEATURES QUICK REFERENCE DATA • Short channel transistor with high

BF998

Abstract: MGA002 MGE802 BF998 depletion BF998R dual-gate bf-998 MGE812 bb405 MGE814
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification Supersedes data of April 1991 File under Discrete Semiconductors, SC07 1996 Aug 01 Philips Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs

Contextual Info: DISCRETE SEMICONDUCTORS DAT BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification Supersedes data of April 1991 1996 Aug 01 NXP Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R FEATURES • Short channel transistor with high forward transfer

Contextual Info: Philips Semiconductors Data sheet sta tu s Product specification date o f issue April 1991 FEATURES BF998 Silicon n-channel dual gate M O S -FET QUICK REFERENCE DATA ratio |Y s l/Cis. • Low noise gain controlled am plifier to 1 GHz. PARAMETER SYMBOL • Short channel transistor with high

BF998R

Abstract: BF998 MGA002 MGE802 application BF998 dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification Supersedes data of April 1991 1996 Aug 01 NXP Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R FEATURES • Short channel transistor with high forward transfer

M74 marking

Abstract: MARKING m3p marking code NB SOT23 m2p SOT23 m33 sot23 MARKING CODE m33 marking Code philips BSR58 marking M33 BF1109
Contextual Info: Philips Semiconductors Small-signal fteld-effect transistors Marking codes Types in SOT23, SOT89, SOT143 and SOT343 packages are marked with a code as listed in the following table. TYPE NUMBER MARKING CODE MARKING CODE TYPE NUMBER TYPE NUMBER MARKING CODE

Philips MARKING CODE

Abstract: Datasheets for BB132 varicap marking code W1 BAT18 A2p sot143 marking code A5 Marking codes sot143 marking code A3 marking A5 sot363 marking W1 S13 SOT363
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small-signal Field-effect Transistors and Diodes 1999 May 12 Philips Semiconductors Small-signal Field-effect Transistors and Diodes Marking codes Product types in SOT23, SOT143, SOT323, SOT343, SOT363, SOD110, SOD323 and SOD523 packages are marked

BSS83 M74

Abstract: bf992 m92 bf998 Mop marking M29 M74 marking BF511 BF909RM29 marking nb transistor M3P BFT46
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Marking codes Small-signal field-effect transistors 1997 Dec 05 Supersedes data of 1995 Apr 12 File under Discrete Semiconductors, SC07 Philips Semiconductors Small-signal field-effect transistors Marking codes Types in SOT23, SOT89, SOT143 and SOT343 packages are marked with a code as listed in the following table.

sot23 marking M6p

Abstract: PMBFJ111 PMBFJ174
Contextual Info: Philips Semiconductors Marking codes Small-signal Field-effect Transistors Types in SOT23, SOT89, SOT143 and SOT343 envelopes are marked with a code as listed in the following tables. TYPE NUM BER M A R K IN G CODE M A R K IN G TYPE NUMBER CODE TYPE NUM BER

BF998

Abstract: G1 TRANSISTOR Marking G2 mosfet tetrode TRANSISTOR mosfet BF998 BF998 marking code BF marking code BF transistor datasheet transistor marking G1 electrostatic discharge
Contextual Info: BF 998R Silicon N-Channel MOSFET Tetrode • Short-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BGT24MTR11

Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Contextual Info: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

Contextual Info: SIEMENS BF 998W Silicon N-Channel MOSFET Tetrode • Short-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD: Electrostatic discharge sensitive device, observe handling precaution!