SDT 9202
Contextual Info: fK> \Pj F Q W f i P_t mmS.A. TYPE NPN PNP BD 135 BD136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 $ BD 239 $ BD 240 $ BD 239A $ BD 240A $ BD 239B $ BD 240B $ BD 239C $ BD 240C $ BD 241 $ BD 242 $ BD 241A £ BD 242A
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bd136o-126o-220sdt 9202 |
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bd 142 transistor
Abstract: BD142 bd 142 transistor bf 454
Contextual Info: BD 142 NPN SILICON TRANSISTOR, HOMOBASE T R A N S IS T O R N P N S IL IC IU M , H O M O B A S E - LF large signal power amplification Am plificateur B F grands signaux de puissance Dissipation derating Case TO-3 Variation de dissipation B o îtie r v CEO 45 V
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cb-19468n2bd 142 transistorbd142+2bd 142transistor bf 454
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BDX 71
Abstract: 3055C BD142 40251 C 5039 2N6354
Contextual Info: POWER TRANSISTORS TYPE a: <_ j o a. A 0 9 3 A >h; > > LU O < _u X CO ^E c E ÜJ IL cj ( 3) s> < _o > X <o o LT3 < _u E tz > II O H @ g Ili JZ CM PACKAGE Hometaxial for linear and switching applications O a Ü. BD 142 NPN 50 45 15 12/60 4 1.1 4 117 2N 3055/BDX 10
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3055/bdx3055c71/2no-220+773/2n75/2nbdx 71bd14240251c 50392n6354
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2N 3055
Abstract: 2N3055 ESM434 BDX 71 2N5294 2N6109 2N6111 ESM435 ESM142 84132N
Contextual Info: N PN Power transistors « Homobase » L l: amplifier and switching » Transistors de puissance « Homobase » Amplification et commutation BF Case f*tot m * B oîtie r O ui _ Compì. > Type C (A ^21E m in max A / (A) Tease 25 C / v CEsat iv i y 'B (A )
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tpu752n52942n61112n6109+72n 30552n3055esm434bdx 71esm435esm14284132n
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Transistors bd 133
Abstract: BD304 2n3054 81 220 bdy82 2N3713 2N6101 2N6111 2N3055 bd 135
Contextual Info: PNP Power Transistors « Epitaxial Bas« » L F Am plifier and switching Transistors de puissance PNP « Base 6pitaxi6e » A m plification e t com m utation B F Type Compl. I Case j B oitier Ptot h21E W V cE O (V) TO 66 29 -5 5 -4 25 TO 66 25 -6 0 -4 20
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tpu752n6101transistors bd 133bd304+72n305481 220bdy822n37132n61112n3055bd 135
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bd 142 transistor
Abstract: bd 109 transistor BD175 BD 139 transistor K1461 BD175.6 BD177 10 watt power transistor bd bd 731 BD179
Contextual Info: Tb M O T O R O L A SC -CXSTRS/R F> 6 3 6 7 2 54 M OT O R O L A SC XSTRS/R DlF|b3b7aS4 96D F MOTOROLA 80559 B D 1 7 5 ,- 6 ,- 1 0 ,- 1 6 SEMICONDUCTOR B D 1 7 7 ,- 6 ,- 1 0 TECHNICAL DATA B D 1 7 9 ,- 6 ,- 1 0 PLASTIC MEDIUM POWER SILICON NPN TRANSISTOR 3 AM PERE
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bd 142 transistorbd 109 transistorbd175bd 139 transistor+6k1461bd175.6bd17710 watt power transistor bdbd 731bd179
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transistor BD 522
Abstract: bd800 bd802 TRANSISTOR BD 168 BD798 transistor L33 L33 TRANSISTOR BD79 BD800 MOTOROLA transistor BD 800
Contextual Info: MOTORCLA SC XSTRS/R 12E F D I b3fcj72SM MOTOROLA Qüfl MTST " M | BD796 BD798 SEMICONDUCTOR TECHNICAL DATA BÒ800 BD8Û2 PLASTIC HIGH POWER SILICON PNP TRANSISTOR 8 AMPERE POWER TRANSISTOR . designed for use up to 3 0 W att audio amplifiers utilizing complementary or quasi complementary circuits.
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b3fcj72smbd796bd798bd800+8bd802transistor bd 522transistor bd 168transistor l33l33 transistorbd79bd800 motorolatransistor bd 800
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BD633
Abstract: BD637 darlington complementary power amplifier tip 142 BD635 tip 42 tip 3055 B0633 TIP 5530 TIP NPN tip 120
Contextual Info: PRELIM IN ARY BD633, BD635, BD637 NPN EPIBASE POWER TRANSISTORS Amplifier Switch Complementary O utput Stages Complementary with BD 633, BD 635, BD 637 mechanical data TO-66P All dimensions are in mm absolute maximum ratings Collector-Emitter Voltage.
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bd633bd635bd637darlington complementary power amplifier tip 142+6tip 42tip 3055b0633tip 5530tip npntip 120
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bd136g
Abstract: bd140 bd series of pnp transistor BD136 BD140 pnp transistor bd 142 transistor
Contextual Info: BD136, BD138, BD140 Plastic Medium Power Silicon PNP Transistor This series of plastic, medium−power silicon PNP transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http://onsemi.com Features
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bd136bd138bd140bd136g+3bd series of pnp transistorbd140 pnp transistorbd 142 transistor
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bdx340
Abstract: Bow94c b0334 Bow93c b0333 BUZ10 d 6283 ic 2N6286 BUZ11 BUZ11S2
Contextual Info: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO p»ot (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60
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2n6284bdx340bow94cb0334+7bow93cb0333buz10d 6283 ic2n6286buz11buz11s2
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B0738
Abstract: b0734 TIP5530 B0736 TIP 5530 BD 147 TIP 3055 tip 125 tip 42 b073
Contextual Info: PRELIMINARY BD734, BD736, BD738 PNP EPIBASE POWER TRANSISTORS H IG H G A IN G E R M A N IU M R E PLA C E M E N T • Car and Portable Radio • Complementary O utput Stages • Complementary w ith B D 733, B D 735, B D737 mechanical data TO-66P All d im e n s io n s a r e in m m
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bd734bd736bd738bd733+12bd735bd737b0738b0734tip5530b0736tip 5530bd 147tip 3055tip 125tip 42b073
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B0638
Abstract: BD638 TIP 122 100 V BD636 B0738 BD637 tip 42 darlington complementary power amplifier tip 142 BD634 73 5302
Contextual Info: BD634, BD636, BD638 PNP EPIBASE POWER TRANSISTORS IPRELIMINARY 873 Amplifier Switch Complementary Output Stages Complementary with BD633, BD635, BD637 mechanical data •— 6 , 0 - o ss l-i ! i J — 1.3 r r - - 16,5 , TT , I * ri | i * t ^ 0.05 thick Base' j i g
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bd634bd636bd638bd633+8bd635bd637b0638tip 122 100 vb0738tip 42darlington complementary power amplifier tip 14273 5302
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Bow94c
Abstract: Bow93c box 53c IC SGS transistors b0334 SGS6388 BO 336 b0333 BOW93B SGSP222
Contextual Info: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80
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buz11sgsp492mtp3055airfp153+12irfp151buz11s2bow94cbow93cbox 53c icsgs transistorsb0334sgs6388bo 336b0333bow93bsgsp222
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Bow94c
Abstract: MJE 131 BD 147 tip 220 sgs mosfet SGSD93G b0333 B0680 bow93b bdw 34 a
Contextual Info: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80
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bdx53bow94cmje 131bd 147+7tip 220sgs mosfetsgsd93gb0333b0680bow93bbdw 34 a
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silicon power 2GB
Abstract: DG432
Contextual Info: BDT63F; BDT63AF ^DTBSBF; BDT63CF 1 PHILIPS INTERNATIONAL SbE D • 7 1 1 0 0 2 b Q 0 4 3 2 b b «îM *1 H P H I N T -3 3 -2 ^ SILICON DARLINGTON POWER TRANSISTORS NPN silicon darlington power transistors in a SOT186 envelope with an electrically insulated mounting
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bdt63fbdt63afbdt63cfot186+4t62bft62cfsilicon power 2gbdg432
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bow94c
Abstract: BOW93C SGSP591 MTP3055A SGSD93G SGSP381 SGSP461 SMD SJ 87 b0334 BUZ10
Contextual Info: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80
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irf530fisgsp361sgsp461buz21+15buz25irf142irf542irf542fiirf152irfp152bow94cbow93csgsp591mtp3055asgsd93gsgsp381smd sj 87b0334buz10
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sot-23 MARKING CODE ZA
Abstract: b0808 BCB47B BCB17-16 marking za sot89 2SB0151K marking k5 sot89 SOT 86 MARKING E4 n33 SOT-23 10Y sot-23
Contextual Info: SURFACE-MOUNTED DEVICE MARKINGS Because of their smali size, it's not possible to show types/ values on most surface-mounted components. The following tables show the code markings used to identify most common surface-mounted transistors and diodes. Note that the same
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ot-23ot-89ot-143bzv49+112sc2059ksot-23 marking code zab0808bcb47bbcb17-16marking za sot892sb0151kmarking k5 sot89sot 86 marking e4n33 sot-2310y sot-23
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TIP42C EQUIVALENT
Abstract: TIP 122 transistor APPLICATION NOTES TIP 122 transistor tip 127 TRANSISTOR equivalent transistor tip 5530 TIP 122 transistor APPLICATION circuit tip 147 TRANSISTOR equivalent TIP41A equivalent TIP42A equivalent TRANSISTOR tip 122
Contextual Info: TYPES TIP42, TIP42A, TIP42B, TIP42C P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS F O R P O W E R -A M P L IF IE R A N D H IG H -SP EED -SW ITCH IN G A P P L IC A T IO N S D E S IG N E D F O R C O M P L E M E N T A R Y U S E W ITH T IP 4 1 , T IP 4 1 A , TIP 4 1 B , T IP 41C
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tip42tip42atip42btip42c+14tip41tip41atip41btip41ctip42c equivalenttip 122 transistor application notestip 122 transistortip 127 transistor equivalenttransistor tip 5530tip 122 transistor application circuittip 147 transistor equivalenttip41a equivalenttip42a equivalenttransistor tip 122
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nf 922
Contextual Info: T O SH IB A 2SK2856 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2SK2856 UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure : NF = 0.7dB f=1.5GHz High Gain : Ga = 21.5dB (f= 1.5GHz) MAXIMUM RATINGS (Ta = 25°C)
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2sk285653z14--j250nf 922 |
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BGY133
Abstract: BGY132 PHILIPS 108 CAPACITOR Amplifier Modules VHF Amplifier Chip "Amplifier Modules" vHF amplifier module BGV132
Contextual Info: Philips Semiconductors Product specification VHF amplifier modules BGY132; BGY133 FEATURES DESCRIPTION • Broadband VHF amplifiers The BGY132 and BGY133 are two stage amplifier modules. Each module comprises two NPN silicon planar transistor chips together with lumped-element
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bgy132bgy133-sot132b711d6eb+700742l5ot132bphilips 108 capacitoramplifier modulesvhf amplifier chipvhf amplifier modulebgv132
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bd157
Abstract: d159
Contextual Info: rZ 7 SGS-THOMSON Ä TI « E Udra «! BD157/8/9 LOW POWER FAST SWITCHING DESCRIPTIO N The BD157, BD158 and BD159 are silicon epitaxial planar NPN transistors in TO-126 plastic package, intended for applications in low power linear and switching. ABSO LU TE MAXIM UM RATINGS
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bd157bd158bd159o-126+2bd157/8/9d159
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Tip 26C transistor
Abstract: tip 26c T1P142 tip140 texas instruments TIP142 Application Note TIP14Z 1N014 tlp142 circuit 2N 3055 transistor tip 3055
Contextual Info: TYPES TIP140, TIP141, TIP142 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS DESIGNED FOR COM PLEM ENTARY USE WITH TIP145, TIP146, TIP147 125 W at 25°C Case Temperature • Min hpE of 1000 at 4 V , 5 A 10-A Rated Collector Current • 100-mJ Reverse Energy Rating
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tip140tip141tip142tip145+13tip146tip147100-mjt1p142tip 26c transistortip 26ctip140 texas instrumentstip142 application notetip14z1n014tlp142circuit 2n 3055transistor tip 3055
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TIP 41 transistor
Abstract: tip 147 TRANSISTOR equivalent TIP 122 transistor tip 127 TRANSISTOR equivalent transistor tip 35c transistor BD 141 transistor tip 5530 transistor tip35c TIP 122 transistor APPLICATION NOTES TRANSISTOR bd 147
Contextual Info: T Y P E S TIP 36, TIP36A, TIP36B, TIP36C P-N-P SINGLE-DIFFUSED M ESA SILICO N POWER TRANSISTORS F O R P O W E R -A M P L IF IE R A N D H IG H -SP EED -SW ITCH IN G A P P L IC A T IO N S D E S IG N E D F O R C O M P L E M E N T A R Y U S E W ITH T IP 3 5 , T IP 3 5 A , T IP 3 5 B , T IP 3 5 C
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tip36tip36atip36btip36c+14tip35tip35atip35btip35ctip 41 transistortip 147 transistor equivalenttip 122 transistortip 127 transistor equivalenttransistor tip 35ctransistor bd 141transistor tip 5530transistor tip35ctip 122 transistor application notestransistor bd 147
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Lautsprecher LP
Abstract: transistor gt 322 service-mitteilungen AC188K ac187k schiebe funkschau STRALSUND MP20A SF225
Contextual Info: SERVICE-MITTEILUNGEN VEB IN D U S T R IE V E R T R IE B R U N D F U N K U N D F E R N S E H E N lE fe r a d io -television \ AUSGABE: Seite April 1-6 Aus der Sowjet-Union wird noch in diesem Jahr der TTEmpfänger " SIGNAL 601 " importiert. Es handelt sich um ein Gerät für den Empfang der Berei
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lautsprecher lptransistor gt 322service-mitteilungenac188k+6ac187kschiebefunkschaustralsundmp20asf225
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