BCY 85 Search Results

65e7

Abstract: BCY65 BCY 59 bcy58 59VIII BCY58-VIII BCY59 Q60203-Y58-G BCY 65 Q60203-Y59-J
Contextual Info: BCY 58, BCY 59, BCY 65 E ~ 2 N 2483 NPN Transistors fo r AF prestages, driver stages and switching applications BCY 58, BCY 59 and BCY 65 E are silicon planar NPN epitaxial transistors in a case 18 A 3 DIN 41 876 (TO -18). The collector is electrically connected to the case.

BCY 107

Abstract: BCY 62 BCY71 BCY72 BCY 12 bcy70
Contextual Info: BCY 70 BCY 71 BCY 72 SILICON PLANAR PNP GENERAL PURPOSE APPLICATIONS The BCY 70, BCY 71 and BCY 72 are silicon planar epitaxial F‘NP transistors in Jedec T O -1 8 metal case. They are intended fo r general purpose am p lifie r and switching applica­ tions.

BCY79

Abstract: bcy 78 bcy 79
Contextual Info: BCY 78 BCY 79 PNP SILICON TRANSISTOR TRANSISTOR PNP S ILIC IU M Compì, of BCY 58 and BCY 59 • Switching and amplifier Commutation e t am plification -3 2 V BCY 78 v CEO -4 5 V BCY 79 'c - 2 0 0 mA M a xim u m pow er dissipation Case TO-18 — See outline drawing CB-6 on last pages

BCY 59

Abstract: BCY 12 BCY58X BCY 85 BCY59 BCY59X BCY58 BCY58-VIII Ucesat BCY 58
Contextual Info: N P N -Transistoren fü r N F -V o r- und T re ib erstu fen sow ie S ch alteran w en dungen - BCY 58 BCY 59 BCY 65 E BCY 58, BCY 59 und BCY 65 E sind epitaktische NPN-Silizium -Planar-Transistoren im Gehäuse 18 A 3 DIN 41 876 T O -1 8 . Der Kollektor ist m it dem Gehäuse elektrisch ver­

bcy580

Abstract: BCY590 transistor h21e SCHEMA BCY59 BCY 59
Contextual Info: *BCY 58 BCY59 NPN SILICON TRANSISTOR TRANSÌSTOR NPN S ILIC IU M Compì, of BCY 78 and BCY 79 Preferred device Dispositif recommandé • For switching and amplifier - Pour com m utation et am plification V CEO 32 V 45 V BCY 58 •c 200 mA BCY 59 Maximum power dissipation

1B57

Abstract: BCY78 BCY79
Contextual Info: SILICON PLANAR PNP BCY78 BCY79 LO W -N O IS E A U D IO A M P L IF IE R S The BCY 78 and BCY 79 are silicon planar epitaxial PNP transistors in Jed ecT O -18 metal case. They are designed fo r use in audio driver and low -noise in p u t stages. The com plem entary NPN types are respectively the BCY 58 and BCY 59.

BCY77

Abstract: BCY79 BCY 791x zr 4.7v bcy 78 Q62702-C327 BCY78 Q62702-C327-V1 Transistor 78 L 05 1Zv transistor
Contextual Info: BCY77, BCY 78, BCY79 PNP Transistors for low-noise AF pre- and driver stages BCY 77, BCY 78 and BCY 79 are epitaxial PNP silicon planar transistors in a case 18 A 3 DIN 41876 TO-18 . The collector is electrically connected to the case. The transistors are of particular use in low-noise AF pre- and driver stages as well as in

BCY77VII

Abstract: BCY78X BCY79 BCY 791x BCY77VIII BCY77 BCY78 Q62702-C327-V1 1Zv transistor
Contextual Info: BCY77, BCY 78, BCY79 PNP Transistors for low-noise AF pre- and driver stages BCY 77, BCY 78 and BCY 79 are epitaxial PNP silicon planar transistors in a case 18 A 3 DIN 41876 TO-18 . The collector is electrically connected to the case. The transistors are of particular use in low-noise AF pre- and driver stages as well as in

BCY59

Abstract: BCY58 BcY591
Contextual Info: BCY58 BCY59 SILICON PLANAR NPN LOW-NOISE AUDIO AMPLIFIERS The BCY58 and BCY59 are silicon planar epitaxial IMPN transistors in Jledec T O -1 8 metal case. They are intended fo r use in audio in p u t stages, driver stages and low-noise in put stages. The com plem entary PNP types are respectively the BCY 78 and !BCY 79.

BCY59IX

Abstract: bcy59 motorola bcy59 BCY59X bcy58-ix bcy58-vii
Contextual Info: MOTORCLA SC XSTRS/R IE E D I F b3b?2S4 00flt.4bfc, T T-M-Äl BCY58 -VII, -Vili, -IX, -X BCY59-VII, -Vili, -IX, -X M A X IM U M R A T IN G S Sym bol BCY 58 BCY 59 Collector-Emitter Voltage VC E O 32 45 Vdc Collector-Emitter Voltage R B E = 10 O hm s VcES

BCY791x

Abstract: bcy791 BCV79-VII BCY79X BCY79IX BCY79-X BCY79 BCY79-VIII BCY78 bcy78 MOTOROLA
Contextual Info: MOTOROLA SC XSTRS/R 12E D | F b3fci72S4 QGflt.M73 7 | r -y t - z I BCY78-VII, -Vili, -IX, -X BCY79-VII, -Vili, -IX, -X MAXIM UM RATINGS R a tin g Coliector-Em itter Voltage S ym b o l BCY 78 BCY 79 U n it VCEO 32 45 Vdc Co llector-Em ittar Voltage R B E 10 Ohm s

BCY79

Abstract: BCY78 bcy 78 bcy 79
Contextual Info: BCY78 BCY 79 SILICON PLANAR PNP LOW-NOISE AUDIO AMPLIFIERS The B C Y 78 and B C Y 79 are silicon planar epitaxial P N P transistors in J e d e c T O - 1 8 metal case. T h e y are designed fo r use in audio driver and lo w -n oise in p u t stages. The com plem entary N P N types are respectively the B C Y 58 and B C Y 59.

BCY59

Abstract: BCY58
Contextual Info: BCY 58 BCY59 SILICON PLANAR NPN LOW-NOISE A UDIO AM PLIFIERS The B C Y 5 8 and B C Y 5 9 are s ilic o n p la n a r e p ita x ia l NPN tran sisto rs in Jedec T O -1 8 m etal case. T he y are in te n de d fo r use in au d io in p u t stages, d riv e r stages and lo w -n o is e in p u t stages.

Q62702-C327

Abstract: BCY79 BCY 12 C327 78-VIII 79IX 34RR
Contextual Info: PIMP-Transistoren für rauscharm e NF-Vor- und B C Y 77 Treiberstufen B C Y 78 -B C Y 79 BC Y 77; BC Y 78; BC Y 79 sind epitaktische PNP-Silizium-Planar-Transistoren im Gehäuse 18 A3 DIN 41 876 TO -18 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden. Die

BCY59

Abstract: BCY58 bcy59c bcy58v BCY 85 bcy59v
Contextual Info: BCY58, BCY59 NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications electronic design in commercial The transistors are subdivided into four groups A, B, C and D according to their current gain. max. 5.0$ max.0.50 Metal case JE D E C TO -18

AC125K

Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T

BC 2219a

Abstract: BFX48 transistor 3504 npn 2N3108 2N3109 BFY50 BFY51 BFY56A
Contextual Info: ¿ 7 7 SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# M M I & J O T « ! SMALL SIGNAL TRANSISTORS NPN GENERAL PURPOSE TRANSISTORS - TO 39 v CEO V C ER* h FE m in/m ax 3> <C Type mA (V) v CE(sat) m ax Ï ic (mA) (V) Pfot «T min ‘ off* (M H z) (ns) (m W )

bc 301 transistor

Abstract: bc 303 transistor A2N transistor BC 170c transistor TRANSISTOR BC 650 c transistor BSX 82 BC211 transistor TRANSISTOR BC 313 BC211 transistor BC 56
Contextual Info: general purpose and fast switching transistor selector guide guide de sélection transistors usage général et commutation rapide ^ THOMSON-CSF 3 a r METAL-CASE/BOITIER METAL Case TO 39 Polarity PIMP NPN ic PNP NPN 0,6.0,8 A < 0 ,2 A v C E O ^ \^ PNP PNP

transistor vergleichsliste

Abstract: Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR vergleichsliste transistor BC-148 rft transistoren Transistoren DDR
Contextual Info: TRANSISTOR VERGLEICHSLISTE Teil 2: Siliziumtransistoren r a d io - t e le v is io n Transistorverglèich& liste T eil 2 : S iliziu in tra n sistoren TRA N SISTO R, V ER G LEICH S LIS T E Teil 2: Siliziumtransistoren DER D EU TSCH EN M IL IT Ä R V E R L A G

Contextual Info: SAFETY ORGANIZATIONS RELIABILITY SPECIFICATIONS: THIS FILTER HAS BEEN FORMALLY RECOGNIZED, CERTIFIEO OR APPROVED BY THE LISTED AGENCY. ALL TEST/REQUIREKENTS SPECIFIED IN THE LATEST REVISION OF THE FOLLOWING AGENCY STANDARDS HAVE BEEN MET: STORAGE TEMPERATURE: -40°C TO +85°C

KT 819 transistor

Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Contextual Info: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e

LDR 03

Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Contextual Info: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren

2sc 9015

Abstract: 2SC644 CS9015 2N4248 scr 4059 transistor MPS 6518 mpsa09 2SC923 2N3550 2SC644 transistor
Contextual Info: 7 -. SEMICONDUCTORS INC OIE I | SlBktSO 0000275 1 | ¿Lf-/? TYPE NO. ; POLARITY 1 Audio Frequency Small Signal Transistors MAXIMUM RATINGS CASE HFE Pd mW) >C (mA) VCEO (V) min max •c (mA) VCE (V) VCE(SAT) max ■c (V) (mA) fT min (MHz) Cob max (pF) 5+

RPY 86

Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Contextual Info: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­