BCXXX TRANSISTOR Search Results

2N5307

Abstract: CBVK741B019 F63TNR MPSA14 PN2222N
Contextual Info: 2N5307 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: BC327, BC327-16, BC327-25, BC327-40 Amplifier Transistors PNP Silicon http://onsemi.com Features • These are Pb−Free Devices* COLLECTOR 1 MAXIMUM RATINGS Symbol Value Unit Collector −Emitter Voltage VCEO −45 Vdc Collector −Emitter Voltage VCES −50

MPSA12

Abstract: CBVK741B019 F63TNR MPSA14 PN2222N
Contextual Info: MPSA12 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

2N5306

Abstract: F63TNR MPSA14 PN2222N CBVK741B019
Contextual Info: 2N5306 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

k 3683 transistor

Abstract: BCxxx TRANSISTOR PN2222N 2N6076 CBVK741B019 F63TNR small signal transistor transistor k 3683 transistor k 0247
Contextual Info: DISCRETE POWER & SIGNAL TECHNOLOGIES 2N6076 SILICON PNP SMALL SIGNAL TRANSISTOR 1 BVCEO . . . . 25 V Min 1 2 3 hFE . . . . 100 (Min) @ VCE = 10 V, IC = 10 mA B C E 2 0.135 - 0.145 (3.429 - 3.683) 3 0.175 - 0.185 (4.450 - 4.700) ABSOLUTE MAXIMUM RATINGS (NOTE 1)

2N5308

Abstract: PN2222N TO5 package D9842 F63TNR MPSA14 CBVK741B019 PN222N D74z transistor k 0247
Contextual Info: 2N5308 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

2N3663

Abstract: CBVK741B019 F63TNR PN2222N PN918
Contextual Info: 2N3663 2N3663 B TO-92 CE NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings*

bc 7-25 pnp

Abstract: BC327-16 BC327-25 BC327 pin out bc327 pin out diagram bc327 application note bc327-40 BC32716 BC32725 C 32725
Contextual Info: BC327, BC327-16, BC327-25, BC327-40 Amplifier Transistors PNP Silicon http://onsemi.com Features • These are Pb−Free Devices* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −45 Vdc Collector −Emitter Voltage

PN2222N

Abstract: 2N6426 CBVK741B019 F63TNR MPSA14 transistor k 0247
Contextual Info: 2N6426 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

2N5770

Contextual Info: 2N5770 C TO-92 BE NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings* Symbol

2N5769

Contextual Info: 2N5769 C TO-92 BE NPN Switching Transistor This device is designed for high speed saturated switching applications at currents to 100 mA. Sourced from Process 21. See PN2369A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

PN2222N

Abstract: BCxxx TRANSISTOR transistor 2001 H1 PN222N D27Z TAPE AMMO PACK TO92 transistor k 0247 TRANSISTOR W2 CBVK741B019 F63TNR
Contextual Info: TO-92 Tape and Reel Data TO-92 Packaging Configuration: Figure 1.0 TAPE and REEL OPTION FSCINT Label sample See Fig 2.0 for various Reeling Styles FAIRCHILD SEMICONDUCTOR CORPORATION LOT: CBVK741B019 PN2222N NSID: D/C1: HTB:B QTY: 10000 SPEC: D9842 SPEC REV:

CBVK741B019

Abstract: F63TNR MPSA28 MPSA29 PN2222N BCxxx TRANSISTOR
Contextual Info: MPSA29 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03. See MPSA28 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

transistor 2001 H1

Abstract: PN4275 CBVK741B019 F63TNR PN2222N PN2369A
Contextual Info: PN4275 C TO-92 BE NPN Switching Transistor This device is designed for high speed saturated switching applications at currents to 100 mA. Sourced from Process 21. See PN2369A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: 2N6426 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

NZT7053

Abstract: 2N7052 2N7053 CBVK741B019 F63TNR PN2222N
Contextual Info: 2N7053 2N7052 NZT7053 C E C B C TO-92 C E B TO-226 B SOT-223 E NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06. Absolute Maximum Ratings*

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F63TNR

Abstract: PN2222N BS270 CBVK741B019
Contextual Info: April 1995 BS270 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to

BCxxx TRANSISTOR

Abstract: PN2222N transistor k 0247
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2N6427

Abstract: CBVK741B019 F63TNR MMBT6427 MPSA14 PN2222N transistor bel 100
Contextual Info: 2N6427 / MMBT6427 2N6427 MMBT6427 C E C B TO-92 B SOT-23 E Mark: 1V NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.

Contextual Info: April 1995 BS270 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to

Contextual Info: 2N6427 / MMBT6427 2N6427 MMBT6427 C E C B TO-92 B SOT-23 E Mark: 1V NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.

rf transistor mark code H1

Abstract: CBVK741B019 F63TNR MMBTH24 MPSH11 MPSH24 PN2222N
Contextual Info: MPSH24 / MMBTH24 MPSH24 MMBTH24 C E C B TO-92 B SOT-23 E Mark: 3A NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 20 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for

Contextual Info: FPNH10 FPNH10 C TO-92 BE NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42.