BC856B ITT Search Results

Contextual Info: BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors M ark in g PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H J - 0_ BC857A = 3E 2.8 0 .14 0.48 BC857B = 3F BC857C = 3G 0.38 BC858 = 3M 3 BC858A = 3]

Contextual Info: BC856 BC857 BC858 CDIL SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors M a rk in g BC856 = 3D BC856A - 3A BC856B - 3B BC857 = 3H BC857A = 3E BC857B - 3F BC857C - 3G BC858 - 3M RC858A = 3J BC858B - 3K BC858C = 3L PACKAGE OUTLINE DETAILS ALL DIM ENSIONS IN m m

BCs56

Abstract: BC857Ser BC85 BC856 BC857 BC858 BC859
Contextual Info: BC856A/B-BC ’857A/B BC858A/R/C-BC859B/C G en eral P urpose t ran sisto r P N P Silicon < o iim o « c ; d i \< ; k \ 3 m v k m m — m □ 2 XX - r>«tic# C o ó t S ee S O I2 J H T >MI I I > K R ating Loiiector-E m itter Voltage BC856 Symbol Nuhic VCE0

BC656

Contextual Info: MAXIMUM RATINGS Symbol BC856 BC857 BC858 Unit C o lle ctor-E m itter Voltage Rating v CEO -6 5 -4 5 -3 0 V C ollector-Base Voltage v CBO -8 0 -5 0 -3 0 V Em itter-Base Voltage v EBO - 5.0 - 5 .0 - 5 .0 V >C '1 0 0 -1 0 0 -1 0 0 m A dc C o lle ctor C u rrent — C ontinuous

TRA BC857

Abstract: LT1M
Contextual Info: MAXIMUM RATINGS Symbol BC856 BC857 BC858 Unit C o lle c to r -E m itte r V o lta g e Rating v CEO -6 5 -4 5 -3 0 V C o lle c to r-B a s e V o lta g e VCBO -8 0 -5 0 -3 0 V E m itte r-B a s e V o lta g e v EBO - 5.0 - 5.0 - 5.0 V 'c -1 00 -1 00 -1 0 0 m Adc

BC856B

Abstract: BC666 BC856 BC856A BC857 BC857A BC857B BC857C BC858 BC858A
Contextual Info: • bbS3^31 0024471 4b4 BIAPX N AMER PHILIPS/DISCRETE BC856 BC857 BC858 b?E D J V . SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistros, in a SOT-23 plastic package. Q U IC K R E F E R E N C E D A T A BC856 C o lle c to r-e m itte r voltage + V g g = 1 V

BC858R

Contextual Info: BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P tra n s is to rs , in a S O T -2 3 p la s tic package. Q U IC K R E F E R E N C E D A T A C o lle c to r-e m itte r vo lta g e + V g g = 1 V ~ V CEX C o lle c to r-e m itte r vo lta g e (o pen base)

c858

Abstract: C585A motorola c858 BCB57 C858A
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors PNP Silicon COLLECTOR 3 BC856ALT1,BLT 1 BC857ALT1 ,BLT1 BC858ALT1 ,BLT1, CLT1 M o to rola P referre d D e v ice s 2 M AXIM UM R A T IN G S EMIT1 Rating Collector-Em itter Voltage C o lle c to r-B a s e Voltage

BC857

Abstract: BC857 KEC MARKING KEG SOT-23 BC856 BC856B BC856A BC857A BC857B BC857C BC858
Contextual Info: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC856/7/8 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURE • For Complementary With NPN Type BC846/847/848. DIM A B C D E G H J MAXIMUM RATINGS Ta=25°C

bc856b itt

Contextual Info: M C C SOT-23 P lastic-E n cap su late Tran sisto rs BC856A/BLT1,857A/BLT1,858A/B/CLT1 TRANSISTOR PNP 1.B A S E 2.E M I T T E R 3.C O L L E C T O R FEATURES P o w e r d is s ip a t io n PcM: 0.3 W ( Tam b=25‘C ) C o lle c t o r c u r re n t ICM: -0.1 A

C858C

Contextual Info: BC856A - BC858C VISHAY PNP SURFACE MOUNT SMALL SIGNALTRANSISTORS /uTE M ir I POWER SEMICONDUCTOR J Features • • • • • Epitaxial Die Construction Ideally Suited tor Automatic Insertion 310 mW Power Dissipation Complementary NPN Types Available BC846-BC848)

3B marking

Abstract: BC846-BC848 BC856A BC856B BC857A BC857B BC857C BC858A BC858B BC858C
Contextual Info: BC856A - BC858C VISHAY PNP SURFACE MOUNT SMALL SIGNALTRANSISTORS /Li T E M I ri / POWERSEMICONDUCTOR I Features • • • • • Epitaxial Die Construction Ideally Suited for Automatic Insertion 310 mW Power Dissipation Complementary NPN Types Available

ITT9014C

Abstract: TCA700Y ITT9013H jc5010 PVPU2204 TCA700 TVP02066 SAA1094-2 SAK215 itt8050cu
Contextual Info: Alphanumerical List of Types Type Page 1N914 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 1N4148 1N4148S 1N4149 1N4149S 1N4150 1N4150S 1N4151 1N4151S 1N4448 1N4448S 1N4454 1N4454S 1N4731 to 1N4764 1N5226 to 1N5262 1N5226S to 1N5262S 1N5817 1N5817M 1N5818

bcb57b

Abstract: BCB57 BC856B 3BP BC858 BC856 BC856A BC856B silicon planar epitaxial transistors BC857A BC857B
Contextual Info: 7 1 1 G Ô E b Q O b ö H B ? 2b2 BC856 BC857 BC858 IPHIN SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistros, in a S O T-23 plastic package. Q U IC K R E F E R E N C E D A T A BC856 BC857 BC858 Col lector-emitter voltage + V g E = 1 V “ V C EX max. 80

BC856B TO-92

Contextual Info: I T T CORP/ I T T CHPNTS MIE II • Mt82bflM OQOiMOa 4 ■ IT O PNP TRAN SISTO RS PNP Silicon Transistors with plastic package 10D3 according to DIN 41870 -TO-92 . On special request, these transistors will also be produced with TO-18 pin configura­ tion.

MOSFET MARKING 3F

Abstract: BT3904 sot23 s07 marking 702 sot23 Diode marking CODE 1M transistor marking 6c 2F PNP SOT23 marking code 2f 2F P marking NA MARKING SOT23
Contextual Info: Surface M o u n t Transistors NPN Transistors/SOT23 Type Num ber M arking Code* VcEO Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 ID MMBT2222A IMBT/MMBT3904 MMBT4401 hpE@ VCE/IC VcE SAT@ Ic/Ib fT @ VCE/IC Cqb @ Vcb V/m A max.V mA/m A MHz

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors BC856AWT1 ,BWT1 BC857AWT1 ,BWT1 BC858AWT1 ,BW T1, CWT1 PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-323/SC-70 which is designed for low power surface mount applications.

marking code ce SOT23

Abstract: MOSFET MARKING 3F marking code 3a sot23 CE MARKING CODE
Contextual Info: Surface M ount Transistors NPN Transistors/SOT23 Type Num ber hpE @ VCE/IC M arking Code* Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 1D MMBT2222A IMBT/MMBT3904 MMBT4401 V ceo V CE SAT @ Ic /lß fT @ V ce/I c Cqb @ VCB V/m A max.V m A/m A

C857

Abstract: c858 C857B
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors BC856AWT1 ,BWT1 BC857AWT1 ,BWT1 BC858AWT1 ,BWT1, CWT1 PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SO T -32 3/SC -7 0 which is

TCA700y

Abstract: SAF1091 TCA700 SAK215 MSP3400 ACP2371-NI ADC2301E SAF1092 5.1 audio converter speech to text converter ic
Contextual Info: List of Types - Integrated Circuits ICs for Consumer Electronics Type Type Page CCD3000 CCU2050 CCU2050PI CCU2070 CCU2070PI CCU3000 CCU3001 CCU3002 CCU3004 CCU3005C/D/E CCU3008 SAA1293A TFP02065/ TVP02066 Closed-Caption-Decoder Central Control Unit Central Control Unit

Contextual Info: BC856A - BC858C PNP SURFACE MOUNT SMALL SIGNALTRANSISTOR /L I T E M îl'j I P O W E R S E M IC O N D U C T O R / Features • • • • • Epitaxial Die Construction Ideally Suited for Automatic Insertion 310 mW Power Dissipation Complementary NPN Types Available

Contextual Info: MOTOROLA Order this document by BC856ALT1/D SEMICONDUCTOR TECHNICAL DATA BC856ALT1 ,BLT1 BC857ALT1, BLT1,CLT1 BC858ALT1 ,BLT1, CLT1 General Purpose Transistors PNP Silicon BASE Motorola Preferred Devices 2 EMITTER MAXIMUM RATINGS Rating Symbol BC856 BC857

transistor bc 649

Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Apr 17 Philips Sem iconductors 1999 Apr 12 PHILIPS Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857 FEATURES PINNING • Low curren t max. 100 mA

ku 602 vc

Abstract: difference between bc856a bc856b
Contextual Info: M O TO R O LA Order this document by b c 8 5 6 a w ti/d SEMICONDUCTOR TECHNICAL DATA General Purpose TVansistors BC856AWT1 ,BWT1 BC857AWT1 ,BWT1 BC858AWT1 ,BW T1, CWT1 PNP Silicon designed for low power surface mount applications. Motorola Preferred Devices