BC85 Search Results

BC857BV

Abstract: BC847BV BC857BV-7 J-STD-020A
Contextual Info: BC857BV PNP DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODEL: BC857BV NEW PRODUCT Features • · · · Epitaxial Die Construction Complementary NPN Types Available BC847BV Ultra-Small Surface Mount Package Lead Free Plating A · · · · · · · SOT-563

MARKING CODE 3J

Contextual Info: BC858W PNP General Purpose Transistor FEATURES • Ideally suited for automatic insertion • For Switching and AF Amplifier Applications MECHANICAL DATA • Case: SOT-323 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, No Br. Sb. CI

Contextual Info: BC856 PNP General Purpose Transistor FEATURES • Ideally suited for automatic insertion • For Switching and AF Amplifier Applications MECHANICAL DATA • Case: SOT-23 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, No Br. Sb. CI

BC859

Abstract: BC859A BC859B BC859C BC860 BC860A BC860B BC860C BST 33
Contextual Info: BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors M arking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F BC860C = 4G _3.0_ 2.8 0.48 0.38 0.14 3 2.6 Pin configuration

Contextual Info: BC856 PNP General Purpose Transistor FEATURES • Ideally suited for automatic insertion • For Switching and AF Amplifier Applications MECHANICAL DATA • Case: SOT-23 Plastic • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃ Characteristic

5F smd transistor

Abstract: SMD Transistor 5f smd transistor marking C2 smd transistor b2 e2 smd transistor Transistors Diodes smd e2 smd transistor ja marking 5F MARKING 5F SOT363 SMD MARKING E1
Contextual Info: Transistors SMD Type PNP General Purpose Double Transistor KC856S BC856S SOT-363 1.3 Unit: mm +0.1 -0.1 0.525 0.65 +0.15 2.3-0.15 Two transistors in one package +0.1 1.25-0.1 Features 0.36 Reduces number of components and board space No mutual interference between the transistors.

Contextual Info: Transistors IC SMD Type BC859W,BC860W Features Low current max. 100 mA . Low voltage (max. 45 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol BC859W BC860W Unit Collector-base voltage Parameter VCBO -30 -50 V Collector-emitter voltage

100MHZ

Abstract: BC858A
Contextual Info: BC858A SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.225 W (Tamb=25OC) Note1 * Collector current ICM : -0.1 A * Collector-base voltage V(BR)CBO : -30 V * Operating and storage junction temperature range O O TJ,Tstg: -55 C to +150 C

100MHZ

Abstract: BC858C
Contextual Info: BC858C SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.225 W (Tamb=25OC) Note1 * Collector current ICM : -0.1 A * Collector-base voltage V(BR)CBO : -30 V * Operating and storage junction temperature range O O TJ,Tstg: -55 C to +150 C

k1R transistor

Abstract: MARKING CODE K1R SOT23 k1R diodes BC846A-BC848C BC847B MARKING k1 MARKING CODE K1m SOT23 BC846B BC848CQ-7-F bc848b transistor marking K1R
Contextual Info: BC846A-BC848C NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • Ideally Suited for Automatic Insertion Complementary PNP Types Available BC856 – BC858 For switching and AF Amplifier Applications

BC848CMTF

Abstract: BC848AMTF BC847CMTF BC850 sot-23 body marking A 4 BC847AMTF BC846 BC849 BC856 BC860
Contextual Info: BC846- BC850 tm NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for automatic insertion in thick and thin-film circuits 3 • Low Noise: BC849, BC850 • Complement to BC856 . BC860 2 1 SOT-23 1. Base 2. Emitter 3. Collector

Contextual Info: BC856 thru BC859 Small Signal Transistors PNP TO-236AB (SOT-23) Mounting Pad Layout .122 (3.1) .110 (2.8) .016 (0.4) 0.037 (0.9 0.037 (0.95) Top View .056 (1.43) .052 (1.33) 3 1 0.079 (2.0) 0.035 (0.9) Dimensions in inches and (millimeters) .007 (0.175)

Contextual Info: BC856 thru BC859 Small Signal Transistors PNP TO-236AB (SOT-23) Mounting Pad Layout 0.031 (0.8) .122 (3.1) .110 (2.8) .016 (0.4) Top View 0.035 (0.9) .056 (1.43) .052 (1.33) 3 1 0.079 (2.0) 2 0.037 (0.95) 0.037 (0.95) Dimensions in inches and (millimeters)

BC856BW

Abstract: KSPR05 BC856AW BC856W
Contextual Info: BC856W PNP General Purpose Transistor FEATURES • Ideally suited for automatic insertion • For Switching and AF Amplifier Applications MECHANICAL DATA • Case: SOT-323 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, No Br. Sb. CI

Transistors

Abstract: BC849 BC850 BC850C BC849 BC849B BC849C BC850 BC850B BC859 BC860
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BC849; BC850 NPN general purpose transistors Product specification Supersedes data of 1999 Apr 08 2004 Jan 16 Philips Semiconductors Product specification NPN general purpose transistors BC849; BC850 FEATURES PINNING • Low current max. 100 mA

Contextual Info: DF N1 10B -6 BC847QAS 45 V, 100 mA NPN/NPN general-purpose transistor 29 July 2014 Product data sheet 1. General description NPN/NPN general-purpose transistor in a leadless ultra small DFN1010B-6 SOT1216 Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: BC857QAS.

BC850 SOT23

Abstract: 2FP TRANSISTOR
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC849; BC850 NPN general purpose transistors Product specification Supersedes data of 1997 Sep 02 File under Discrete Semiconductors, SC10 1998 Aug 06 Philips Semiconductors Product specification NPN general purpose transistors

BC856

Abstract: BC856ALT1 BC856BLT1 BC857 BC857ALT1 BC857BLT1 BC858 BC858ALT1 BC858BLT1 BC859
Contextual Info: BC856ALT1 Series Preferred Devices General Purpose Transistors PNP Silicon MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO –65 –45 –30 V Collector-Base Voltage VCBO –80 –50 –30 V Emitter–Base Voltage

Contextual Info: BC856 SERIES PNP GENERAL PURPOSE TRANSISTORS 30/45/65 Volt VOLTAGE POWER 330 mWatt 0.006 0.15 MIN. FEATURES 0.120(3.04) • General Purpose Amplifier Applications 0.110(2.80) • Collector Current IC = -100mA • Complimentary (PNP) Devices : BC846/BC847/BC848/BC849

Contextual Info: BC856 THRU BC859 Small Signal Transistors PNP FEATURES SOT-23 .118 ( 3 . 0 ) .016 ( 0 .4 ) ♦ PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. ♦ Especially suited for automatic insertion in thick- and thin-film circuits.

BC857 st

Abstract: BC857 DSA00103967
Contextual Info: SEMICONDUCTOR BC857 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 3E 1 2 Item Marking Description Device Mark 3 BC857 hFE Grade E E, F * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

MARKING 4a

Abstract: BC859 .a h marking marking 4a sot23
Contextual Info: SEMICONDUCTOR BC859 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 4A 1 2 Item Marking Description Device Mark 4 BC859 hFE Grade A A, B * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

MARKING 2F SOT23

Abstract: sot23 marking 2f 2f bc850 BC850 marking 2f 3
Contextual Info: SEMICONDUCTOR BC850 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 2F 1 2 Item Marking Description Device Mark 2 BC850 hFE Grade F F, G * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

BC846W

Abstract: BC846W-A BC846W-B BC847W BC848W
Contextual Info: SEMICONDUCTOR BC846W/7W/8W TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . E B M M FEATURES D A J 2 High Voltage : BC846W VCEO=65V. 3 1 G For Complementary With PNP Type BC856W/857W/858W. DIM A B C MILLIMETERS