BC817 PHILIPS Search Results

15002

Abstract: Transistor BC817 transistor 6D sot23
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC817 NPN general purpose transistor Product specification Supersedes data of 1997 Mar 12 1999 Jun 01 Philips Semiconductors Product specification NPN general purpose transistor BC817 FEATURES PINNING

BF914

Abstract: BZV80 PXTA14 PMBTA64 PMBFJ177 BB219 PMBFJ174 BST60 PMBTA14 PMBT4401
Contextual Info: Surface Mount Transistors & Diodes Type Index Typ« Pag* ivi» Rage type Pago Type Page Type ' Page lype Page BA314L BA423L BA582 BA682 BA683 183 175 175 175 175 BC808-25 BC808-40 BC817-16 BC817-25 BC817-40 144 144 140 140 140 BCV72 BCW29 BCW30 BCW31 BCW32

BC817-40

Abstract: BC807 BC817 BC817-16 BC817-25 marking 6b philips
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BC817 NPN general purpose transistor Product specification Supersedes data of 1999 Jun 01 2004 Jan 05 Philips Semiconductors Product specification NPN general purpose transistor BC817 PINNING FEATURES • Collector current capability IC = 500 mA

2n261 rca

Abstract: 2N301G 2n257 2n185 2n222 motorola diode s2m 2N277 2N244 2N243 2N332A
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2501199 2501424 2N997 2SC982TM MMBT100 MMBT200 MMBT3642 MPSS545 MPSS545 MPSS545 BCWSSRH BCWS8RG BC817 BC817 BC1S7B 2N472 2N472A 2N2247 2N2247 2N2247 ~~i~~9 25 30 2N2038 2N332A 2N757 2N758 MPSS544 2N475

2N904

Abstract: 2N929 texas 2N906 2N905 Emihus 2N828 2N843 2N928 2N850 LOW-POWER SILICON NPN
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2501199 2501424 2N997 2SC982TM MMBT100 MMBT200 MMBT3642 MPSS545 MPSS545 MPSS545 BCWSSRH BCWS8RG BC817 BC817 BC1S7B 2N472 2N472A 2N2247 2N2247 2N2247 ~~i~~9 25 30 2N2038 2N332A 2N757 2N758 MPSS544 2N475

SO45

Abstract: 2N243 2N2247 2SC1072 LOW-POWER SILICON NPN 2N472 2N2897 BSY10
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2501199 2501424 2N997 2SC982TM MMBT100 MMBT200 MMBT3642 MPSS545 MPSS545 MPSS545 BCWSSRH BCWS8RG BC817 BC817 BC1S7B 2N472 2N472A 2N2247 2N2247 2N2247 ~~i~~9 25 30 2N2038 2N332A 2N757 2N758 MPSS544 2N475

transistor 6Cp

Abstract: 6Bp transistor transistor 6bp bc817 6Bp BC807 BC808 BC817 BC817-16 BC817-25 BC817-40
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC817; BC818 NPN general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 12 Philips Semiconductors Product specification

transistor 6Cp

Abstract: bc817 6Bp transistor transistor 6bp 6Cp transistor marking 6ap General Purpose Transistors bc817 6Bp bc818 marking code 6Cp
Contextual Info: DISCRETE SEMICONDUCTORS Æm ülnlEET BC817; BC818 NPN general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors 1997 Mar 12 PHILIPS Philips Semiconductors Product specification

6C TRANSISTOR MARKING

Abstract: transistor marking 6c transistor 6D bc817 philips BC817 transistor 6D sot23 MARKING CODE 16 transistor sot23 BC817-40 BC817-25-6B MARKING 16 transistor sot23
Contextual Info: Philips Semiconductors Product specification NPN general purpose transistor BC817 FEATURES PINNING • High current max. 500 mA PIN • Low voltage (max. 45 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification.

transistor 6Cp

Abstract: transistor 6bp bc817 6Bp 6Bp transistor bc817 marking 6ap marking 6CP 6Cp transistor bc817 philips 8H721
Contextual Info: Philips Semiconductors Product specification NPN general purpose transistors BC817; BC818 FEATURES PINNING • High current max. 500 mA PIN • Low voltage (max. 45 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector General purpose switching and amplification.

c33725

Abstract: c33740 C33740 NPN transistor transistor c33725 c33725 transistor BC337-40 C33740 transistor c33740 c33725 philips C33740 transistor C33740 NPN transistor datasheet
Contextual Info: BC817; BC817W; BC337 45 V, 500 mA NPN general-purpose transistors Rev. 05 — 21 January 2005 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors. Table 1: Product overview Type number Package PNP complement Philips

60S sot223

Abstract: 2PD601A
Contextual Info: P hilip s Sem iconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal transistors GENERAL-PURPOSE L.F. BIPOLAR TRANSISTORS CONTINUED ratings type Vceo (V) *c max. (mA) NPN BC817 BC817W BC818 BC818W BC846

TYP 513 309

Abstract: philips fr 310 PXTA14 PMBTA64 Philips Semiconductors Selection Guide BST60 PDTA143 PMBTA14 2PD601A PDTA144
Contextual Info: Philips Semiconductors Surface mounted transistors Selection guide GENERAL PURPOSE APPLICATIONS hFE TYPE NUMBER V CEO •c V (mA) fr Plot (mw) min. max. typ (MHz) PAGE NPN BC817 45 500 250 100 600 200 159 BC818 25 500 250 100 600 200 159 BC846 65 100 250

Contextual Info: N AUER PHILIPS/DISCRETE ObE » • ^^53^31 00155°^ 3 — BC817 BC818 T -^ 9 -1 7 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a SOT-23 plastic envelope for use in driver and output stages o f audio amplifiers in thick and thin-film hybrid circuits.

BC808

Abstract: BC817R code marking 5Cp sot-23 BC807 BC807-16 BC807-25 BC807-40 BC808-16 BC808-25 BC817
Contextual Info: 7 1 1 0 0 5 b OGbflMQS 752 H P H I N BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a SOT-23 plastic package for use in driver and output stages of aufio amplifiers in thick and thin-film hybrid circuits. N-P-N complements are BC817; R and BC818;R respectively.

code marking 6Cp sot-23

Abstract: marking 6ap BC817-40 marking 6CP BC807 BC808 BC817 BC817-16 BC817-25 BC818
Contextual Info: • bbS3T31 0D24M4fc. EDI H A P X N AUER PHIL I P S / D I S C R E T E BC817 BC818 b?E 3> SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a SOT-23 plastic package fo r use in d river and o u tp u t stages o f audio a m plifiers in th ic k and th in -film h y b rid circu its.

Contextual Info: • bb53^31 002444b EOT * A P X N AUER PHILIPS/DISCRETE b?E B C 817 B C 818 D J V SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a SOT-23 plastic package for use in driver and output stages of audio amplifiers in thick and thin-film hybrid circuits.

BC818-16R

Abstract: BC817-16R sot-23 npn marking code cr 48mT C817 BC807 BC808 BC817 BC817-16 BC818
Contextual Info: N AMER PHILIPS/DISCRETE OLE D • bhS3T3]i OOISSGT 3 ■■ BC8Ï7 BC818 T -^ 9 -1 7 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a SOT-23 plastic envelope for use in driver and output stages of audio amplifiers in thick and thin-film hybrid circuits.

amplifier TRANSISTOR 12 GHZ

Abstract: BFG11/ON961 transistor amplifier 3 ghz 7.1 power amplifier circuit diagram BFG540 bfg540 s-parameter Low frequency amplifier V 12v philips printed circuit board design transistor r06 BFG11
Contextual Info: Philips Semiconductors Power amplifier for 1.9 GHz at 3 V Application report In this note some results of measurements are described performed on a RF amplifier for 1.9GHz applications. The amplifier is build up from three bipolar transistors, the broadband

b050 TRANSISTOR

Abstract: bipolar transistor ghz s-parameter 7.1 power amplifier circuit diagram BFG10 Transistor BC817 power amplifier circuit diagram at c15 100 3p9 amplifier TRANSISTOR 12 GHZ BC817 BFG11
Contextual Info: Philips Semiconductors Power amplifier for 1.9 GHz at 3 V Application report In this note some results of measurements are described performed on a RF amplifier for 1.9GHz applications. The amplifier is build up from three bipolar transistors, the broadband

trw RF POWER TRANSISTOR

Abstract: BLT80 bfg540 s-parameter BLT81 trw rf transistor trw rf semiconductors npn power amplifier circuit BC807 BC817 BFG540
Contextual Info: Philips Semiconductors Power amplifier for 900 MHz at 6 V Application report POWER AMPLIFIER for 900 MHz at 6V In this note some results of measurements are described performed on a RF amplifier for 900 MHz applications. The amplifier is able to deliver 1.2 W RF output power with an efficiency

power amplifier circuit diagram with pcb layout

Abstract: PH ON 4307 2.45 Ghz power amplifier 45 dbm 2.45 Ghz power amplifier BFG480W amplifier TRANSISTOR 12 GHZ power amplifier circuit diagram with pcb layout 2 Um 3562 BC817 2.45 Ghz power amplifier 30 db
Contextual Info: APPLICATION INFORMATION 2.45 GHz power amplifier with the BFG480W Philips Semiconductors Application information 2.45 GHz power amplifier with the BFG480W ABSTRACT • Description of the product The BFG480W, one of the Philips double polysilicon wideband transistors of the BFG400 series. These transistors are

high Power audio amplifier btl class

Abstract: high power class d audio 200 W CLASS D AUDIO AMPLIFIER AN10239 CLASS D AUDIO AMPLIFIER PHP45NQ11T audio amplifier POWER TRANSISTORS high power class d class d amplifier theory audio power amplifiers with transistors
Contextual Info: AN10239_1 High Power Discrete Class D Audio Amplifiers Application note High Power Discrete Class D Audio Amplifiers For high output power, discrete Class D audio amplifiers are the most cost-effective solution. This application note gives an overview of the global design and the semiconductors used in a discrete Class D audio amplifier operating

16w SOT23

Abstract: sc-59 SOT23 NPN SOT323 2PD601A 2PC4081R 2PC4081 2PC4081Q 2PC4081S 2PC4617
Contextual Info: Philips Semiconductors Small-signal Transistors Selection guide SURFACE-MOUNT DEVICES NPN GENERAL PURPOSE LOW-POWER TRANSISTORS TYPE NUMBER PACKAGE VCEO max. V IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) PNP COMPL. PAGE 2PC4081 SC-70 40 100