BTB1424N3
Abstract: BTD2150N3
Contextual Info: CYStech Electronics Corp. Spec. No. : C817N3-R Issued Date : 2003.04.03 Revised Date :2004.09.30 Page No. : 1/5 Low VCE sat PNP Epitaxial Planar Transistor BTB1424N3 Features • Excellent DC current gain characteristics • Low Saturation Voltage VCE(sat)=-0.3V(typ)(IC=-2A, IB=-100mA).
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c817n3-rbtb1424n3-100mabtd2150n3+2ot-23ul94v-0
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BTB1424LN3
Abstract: BTD2150LN3
Contextual Info: CYStech Electronics Corp. Spec. No. : C817N3 Issued Date : 2003.06.17 Revised Date:2004.07.01 Page:1/4 Low VCE sat PNP Epitaxial Planar Transistor BTB1424LN3 Features • Low VCE(sat), typically -0.3 V at IC / IB = -2A / -0.2A • Excellent current gain characteristics
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c817n3btb1424ln3btd2150ln3ot-23+1ul94v-0
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B1424
Abstract: BTD2150AT3 b142 B1424 r 03 C817T3
Contextual Info: CYStech Electronics Corp. Spec. No. : C817T3 Issued Date : 2005.10.20 Revised Date : Page No. : 1/4 Low Vcesat PNP Epitaxial Planar Transistor BTB1424AT3 Features • Low VCE sat , typically -0.3V at IC / IB = -2A / -0.1A • Excellent current gain characteristics
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c817t3btb1424at3btd2150at3o-126+4ul94v-0b1424b142b1424 r 03
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B1184
Abstract: transistor b1184 Transistor B1184 Circuit b1184 transistor b1184 R btb1184j3 C817J3 BTD1760J3 C817 to252 footprint wave soldering
Contextual Info: CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTB1184J3 Spec. No. : C817J3 Issued Date : 2003.04.18 Revised Date : 2009.02.04 Page No. : 1/6 BVCEO IC RCESAT -50V -3A 130mΩ Features • Low VCE sat • Excellent current gain characteristics
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btb1184j3c817j3btd1760j3o-252+8ul94v-0b1184transistor b1184transistor b1184 circuitb1184 transistorb1184 rc817to252 footprint wave soldering
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B772 equivalent
Abstract: b772 to 126 b772 p TRANSISTOR b772 B772 SPECIFICATION pnp b772 BTB772T3S complementary b772 B772 b772 pnp
Contextual Info: CYStech Electronics Corp. Spec. No. : C817T3-H Issued Date : 2002.08.18 Revised Date : 2005.09.16 Page No. : 1/4 Low Vcesat PNP Epitaxial Planar Transistor BTB772T3/S Features • Low VCE sat , typically -0.3V at IC / IB = -2A / -0.2A • Excellent current gain characteristics
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c817t3-hbtb772t3/sbtd882t3/so-126+11ul94v-0b772 equivalentb772 to 126b772 ptransistor b772b772 specificationpnp b772btb772t3scomplementary b772b772b772 pnp
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B1424
Abstract: TO126ML BTB1424AD3 BTD2150AD3 126ML
Contextual Info: CYStech Electronics Corp. Spec. No. : C817D3 Issued Date : 2005.05.16 Revised Date : Page No. : 1/4 Low VCE sat PNP Epitaxial Planar Transistor BTB1424AD3 Features • Excellent DC current gain characteristics • Low Saturation Voltage, VCE(sat)=-0.3V(typ) @IC=-2A, IB=-100mA.
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c817d3btb1424ad3-100mabtd2150ad3+5o-126mlul94v-0b1424to126ml126ml
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B772 equivalent
Abstract: C817T3-H TRANSISTOR b772 b772 q b772 b772 p BTD8 BTB772T3 BTD882T3 B772 SPECIFICATION
Contextual Info: CYStech Electronics Corp. Spec. No. : C817T3-H Issued Date : 2002.08.18 Revised Date : 2005.11.22 Page No. : 1/4 Low Vcesat PNP Epitaxial Planar Transistor BTB772T3 Features • Low VCE sat , typically -0.3V at IC / IB = -2A / -0.2A • Excellent current gain characteristics
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c817t3-hbtb772t3btd882t3btb772t3/s+9o-126ul94v-0b772 equivalenttransistor b772b772 qb772b772 pbtd8b772 specification
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B1424
Abstract: BTD2150A3
Contextual Info: CYStech Electronics Corp. Spec. No. : C817A3-R Issued Date : 2006.05.30 Revised Date: Page:1/4 Low Vcesat PNP Epitaxial Planar Transistor BTB1424A3 Features • Low VCE sat ,typically -0.3 V at IC / IB = -2A / -0.2A • Excellent current gain characteristics
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c817a3-rbtb1424a3btd2150a3ul94v-0+1b1424
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b1243 TRANSISTOR
Abstract: B1243 TRANSISTOR B1243 BTB1243I3 BTD1864I3 TO-251 Outline
Contextual Info: Spec. No. : C817I3 Issued Date : 2003.07.03 Revised Date : 2004.07.02 Page No. : 1/4 CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTB1243I3 Features • Low VCE sat , VCE(sat)=-0.2 V (typical), at IC / IB = -2A / -0.1A • Excellent current gain characteristics
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c817i3btb1243i3btd1864i3o-251+5ul94v-0b1243 transistorb1243transistor b1243to-251 outline
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B1424
Abstract: BTB1424L3 C817 BTD2150L3
Contextual Info: CYStech Electronics Corp. Spec. No. : C817L3 Issued Date : 2003.07.31 Revised Date :2004.12.15 Page No. : 1/3 Low VCE sat PNP Epitaxial Planar Transistor BTB1424L3 Features • Excellent DC current gain characteristics • Low Saturation Voltage VCE(sat)=-0.4V(typ) (IC=-2A, IB=-100mA).
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c817l3btb1424l3-100mabtd2150l3+3ul94v-0b1424c817
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dallas date code FOR DS1230Y
Abstract: ds1230ab date code dallas date code ds1230 dallas date code ds1245y DS1245Y-100 date code DS13D12 ds1230Y date code DALLAS SEMICONDUCTOR Ds1230 DS1230Y-200 DALLAS DS1230Y-150 DALLAS
Contextual Info: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244-3292 972 371-4000 Date: 3/17/98 Subject: PRODUCT CHANGE NOTICE - C81701 Description: Revised : NV change in DS1230, DS1245 AND DS1250 DIP-Package NV SRAMS
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c81701ds1230ds1245ds1250+12b80201d1210ds13d12dallas date code for ds1230yds1230ab date codedallas date code ds1230dallas date code ds1245yds1245y-100 date codeds1230y date codedallas semiconductor ds1230ds1230y-200 dallasds1230y-150 dallas
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BTB1424N3
Abstract: BTD2150N3 N3 SOT-23 transistor marking 2A H
Contextual Info: CYStech Electronics Corp. Spec. No. : C817N3-R Issued Date : 2003.04.03 Revised Date :2006.10.13 Page No. : 1/5 Low VCE sat PNP Epitaxial Planar Transistor BTB1424N3 Features • Excellent DC current gain characteristics • Low Saturation Voltage VCE(sat)=-0.25V(typ)(IC=-2A, IB=-100mA).
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c817n3-rbtb1424n3-100mabtd2150n3+4ot-23ul94v-0n3 sot-23transistor marking 2a h
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b1184
Abstract: transistor b1184 Transistor B1184 Circuit b1184 R b1184 transistor BTB1184J3 BTD1760J3 BTD1760
Contextual Info: CYStech Electronics Corp. Spec. No. : C817J3 Issued Date : 2003.04.18 Revised Date : 2005.10.04 Page No. : 1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB1184J3 Features • Low VCE sat • Excellent current gain characteristics • Complementary to BTD1760J3
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c817j3btb1184j3btd1760j3o-252+7ul94v-0b1184transistor b1184transistor b1184 circuitb1184 rb1184 transistorbtd1760
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b772s
Abstract: BTB772SA3 BTD882SA3
Contextual Info: CYStech Electronics Corp. Spec. No. : C817A3-H Issued Date : 2003.05.31 Revised Date:2004.07.02 Page:1/4 Low Vcesat PNP Epitaxial Planar Transistor BTB772SA3 Features • Low VCE sat ,typically -0.3 V at IC / IB = -2A / -0.2A • Excellent current gain characteristics
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Marking ae SOT89
Abstract: marking AE SOT-89 C817 BTB1424AM3 BTD2150AM3
Contextual Info: CYStech Electronics Corp. Spec. No. : C817M3A Issued Date : 2003.10.05 Revised Date :2005.10.04 Page No. : 1/5 Low VCE sat PNP Epitaxial Planar Transistor BTB1424AM3 Features • Excellent DC current gain characteristics • Low Saturation Voltage, VCE(sat)=-0.3V(typ) @IC=-2A, IB=-100mA.
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c817m3abtb1424am3-100mabtd2150am3+5ot-89ul94v-0marking ae sot89marking ae sot-89c817
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B1424
Abstract: TRANSISTOR C 4460 TO126ML b142 BTB1424AD3 BTD2150AD3
Contextual Info: CYStech Electronics Corp. Spec. No. : C817D3 Issued Date : 2005.05.16 Revised Date :2006.04.21 Page No. : 1/4 Low VCE sat PNP Epitaxial Planar Transistor BTB1424AD3 Features • Excellent DC current gain characteristics • Low Saturation Voltage, VCE(sat)=-0.3V(typ) @IC=-2A, IB=-100mA.
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c817d3btb1424ad3-100mabtd2150ad3+6o-126mlul94v-0b1424transistor c 4460to126mlb142
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b772 p
Abstract: TRANSISTOR b772 p complementary b772 H B772 TO-251 B772 BTD8 b772 B772 SPECIFICATION TRANSISTOR b772 B772 TRANSISTOR
Contextual Info: CYStech Electronics Corp. Spec. No. : C817I3-H Issued Date : 2003.04.02 Revised Date: 2009.02.04 Page:1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB772I3 BVCEO IC RCESAT -30V -3A 150mΩ Features • Low VCE sat ,typically -0.3 V at IC / IB = -2A / -0.2A
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c817i3-hbtb772i3btd882i3o-251+12pw350sul94v-0b772 ptransistor b772 pcomplementary b772h b772to-251 b772btd8b772b772 specificationtransistor b772b772 transistor
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B772
Abstract: b772 p B772 SPECIFICATION BTB772SA3 TRANSISTOR b772 complementary b772 b772 pnp BTD882SA3 H B772
Contextual Info: CYStech Electronics Corp. Spec. No. : C817A3-R Issued Date : 2003.05.31 Revised Date:2006.05.15 Page:1/4 Low Vcesat PNP Epitaxial Planar Transistor BTB772SA3 Features • Low VCE sat ,typically -0.3 V at IC / IB = -2A / -0.1A • Excellent current gain characteristics
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c817a3-rbtb772sa3btd882sa3pw350s+8ul94v-0b772b772 pb772 specificationtransistor b772complementary b772b772 pnph b772
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UTC 1316
Abstract: 74hc4060 xtal LM358 RF receiver module HD44100 HD44780 utc 1240 a can1a350ek 940 629 MOTOROLA 220 TBA 240B utc 1018 hc11k
Contextual Info: MOTOROLA Order this document by AN1597/D SEMICONDUCTOR APPLICATION NOTE AN1597 Longwave Radio Data Decoding using an HC11 and an MC3371 Prepared by: P. Topping AMCU Applications Engineering Motorola Ltd., East Kilbride INTRODUCTION The BBC’s Radio 4 198 kHz Longwave transmitter carries
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an1597/dan1597mc3371utc 1316+974hc4060 xtallm358 rf receiver modulehd44100 hd44780utc 1240 acan1a350ek940 629 motorola 220tba 240butc 1018hc11k
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glenair fittings and entraco conduit
Abstract: Glenair entraco RG-233 RG233 SHIPBOARD CONDUIT R/SHIPBOARD CONDUIT
Contextual Info: Conduit Systems M24758 Flexible Waterproof EMI/EMP Conduit and End Fittings General Information The Right Wire Protection Solution for Every Shipboard Application Glenair offers a wire protection solution for every shipboard requirement. Our comprehensive MIL-C-24758 conduit product line
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m24758mil-c-24758glenair fittings and entraco conduitglenair entraco+4rg-233rg233shipboard conduitr/shipboard conduit
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c828 transistor
Abstract: c828 transistor datasheet free C828 transistor c828 c828 C834 transistor tr c828 STEP C839 tr c828 c829 dual C824
Contextual Info: STw5098 Dual low-power asynchronous stereo audio Codec with integrated power amplifiers Features • Dual 20 bit audio resolution, 8 kHz to 96 kHz independent rate ADC and DAC ■ Dual I2S or PCM digital interfaces for dual master ■ Sustain complex voice and audio flow with or
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stw5098cd0006966485/85c828 transistorc828 transistor datasheet+8free c828transistor c828c828c834 transistortr c828step c839tr c828 c829dual c824
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sk 8050 rf
Abstract: smd diode 815b C8050 schottky C475 DIODE 2C101 m15 fah 001 8 24VDc R5C592 LTN154X1-L02 W83L950 BGA144F
Contextual Info: SERVICE MANUAL FOR 8050 BY: Grass.Ren Repair Technology Research Department /EDVD Feb.2004 8050 N/B Maintenance Contents 1. Hardware Engineering Specification …………………………………………………………………. 1.1 Introduce ……………………………………………………………………………………………….
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855gmevt6307lieee1394sk 8050 rf+9smd diode 815bc8050schottky c475 diode2c101m15 fah 001 8 24vdcr5c592ltn154x1-l02w83l950bga144f
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sis 962l
Abstract: 301LV 93lc468 SIS 740 sc728 RT8110 sis962l CMI9739A lc949 CMI9739
Contextual Info: 5 4 3 2 1 Power Now Clock Gen. PAGE 5 AMD Mobile Duron CPU RTC,VCC3,VCC5 PAGE 10 Sideband Bus SYSTEM POWER PAGE 22 PAGE 38 Thermal D D PAGE 2,3,4 Clock Buffer CHARGER &SELECTOR PAGE 11 PAGE 34 S2K Bus CRT North Bridge PAGE 15 BAT.LOW&OVER.T Memory Bus SiS 740
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max1858301lvmax1711ite8705+14ene3886lm3931ss35525c--55c--sis 962l93lc468sis 740sc728rt8110sis962lcmi9739alc949cmi9739
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sl8z4
Abstract: diagram HANNSTAR k mv VDD256 hannstar j mv 1 g792 WISTRON diode c649 ST 1D05V M54-p PCI7412
Contextual Info: A B C D LWG2-D Block Diagram Discrete Mobile CPU CLK GEN. 4 IDT CV125PA Project code: 91.4Q801.001 PCB P/N : 55.4Q801.XXX REVISION : 06210-2 (Hannstar, ACCL) G792 Yonah 478 1.83G/2G/2.16G 4, 5 3 19 PCB STACKUP TOP TVO HOST BUS 400/533/667MHz LVDS DDR2 533/667MHz
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tps51120cv125pa83g/2g/2400/533/667mhz+144q801tps51124533/667mhztps51100sl8z4diagram hannstar k mvvdd256hannstar j mv 1g792wistrondiode c649 st1d05vm54-ppci7412
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