126ML Search Results

126ML Price and Stock

Filter by Manufacturer

Select Manufacturer


Glenair Inc 445VL126ML1208 COMMERCIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	445VL126ML1208	Each			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
COI DO1608C126MLC AVAILABLE EU
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	DO1608C126MLC		679			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Glenair Inc 445VK126ML1813 BACKSHELL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Interstate Connecting Components	445VK126ML1813					1 - 10 - 100 - 1000 - 10000 -	Buy Now
Powell Electronics	445VK126ML1813		6		1	1 $19852.38 10 $15881.90 100 $15881.90 1000 $15881.90 10000 $15881.90	Buy Now
Glenair Inc 445VK126ML1611 BACKSEHLL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Interstate Connecting Components	445VK126ML1611					1 - 10 - 100 - 1000 - 10000 -	Buy Now
Powell Electronics	445VK126ML1611		3		1	1 $18586.69 10 $18586.69 100 $18586.69 1000 $18586.69 10000 $18586.69	Buy Now
Glenair Inc 445VZ126ML2217 BACKSHELL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Interstate Connecting Components	445VZ126ML2217					1 - 10 - 100 - 1000 - 10000 -	Buy Now

Find more 126ML price and stock on Findchips.com

126ML Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
C5201 transistor Abstract: c5201 Marking 8A 737 TRANSISTOR Transistor C5201 k 1457 BTC5201D3 Contextual Info: Spec. No. : C653D3 Issued Date : 2003.10.03 CYStech Electronics Corp. Revised Date : Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTC5201D3 Features • Low VCE sat • High BVCEO • Excellent current gain characteristics Symbol Outline TO-126ML	Original	C653D3 BTC5201D3 O-126ML UL94V-0 C5201 transistor c5201 Marking 8A 737 TRANSISTOR Transistor C5201 k 1457 BTC5201D3	PDF
TL 188 TRANSISTOR PNP Abstract: HTIP117D Contextual Info: HI-SINCERITY Spec. No. : HD200204 Issued Date : 2002.04.01 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HTIP117D PNP EPITAXIAL PLANAR TRANSISTOR Description TO-126ML The HTIP117D is designed for use in general purpose amplifier and low-speed	Original	HD200204 HTIP117D O-126ML HTIP117D 183oC 217oC 260oC TL 188 TRANSISTOR PNP	PDF
H11-44 Contextual Info: PN P S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H1144 █ APPLICATIONS Medium frequency power amplifier，Medium Seed switching. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-126ML Tstg——Storage Temperature………………………… -55~150℃	Original	H1144 O-126ML -120V -100V -100V, -100mA -500mA, -50mA H11-44	PDF
hb123d Contextual Info: NPN S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HB123D █ APPLICATIONS Power Amplifie █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-126ML Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃	Original	HB123D O-126ML 300mA 500mA 100mA, hb123d	PDF
Contextual Info: N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HM13002 █ HIGH VOLTAGE SWITCH MODE APPLICICATIONS High Speed Switching Suitable for Switching Regulator and Montor Control █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-126ML	Original	HM13002 O-126ML 500mA 100mA	PDF
Contextual Info: NPN S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H2682 █ APPLICATIONS . Audio Power Amplifie. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-126ML Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃	Original	H2682 O-126ML 10AIC	PDF
B1143 Abstract: transistor D1683 2SD 1143 2SB1143S Contextual Info: Ordering number : EN2063C 2SB1143/2SD1683 Bipolar Transistor http://onsemi.com – 50V, (–)4A, Low VCE(sat), (PNP)NPN Single TO-126ML Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • • Adoption of FBET, MBIT processes	Original	EN2063C 2SB1143/2SD1683 O-126ML 2SB1143 B1143 transistor D1683 2SD 1143 2SB1143S	PDF
lb123d Contextual Info: DC COMPONENTS CO., LTD. LB123D DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for high voltage, high speed switching circuits, and amplifier applications. TO-126ML Pinning .163 4.12 .153(3.87) 1 = Emitter	Original	LB123D O-126ML lb123d	PDF
2sc3902 Abstract: 2sa1507 EN2101E Contextual Info: Ordering number : EN2101E 2SA1507/2SC3902 Bipolar Transistor http://onsemi.com – 160V, (–)1.5A, Low VCE(sat), (PNP)NPN Single TO-126ML Applications • Color TV audio output, converters, inverters Features • • • Large current capacity • Adoption of FBET and MBIT process	Original	EN2101E 2SA1507/2SC3902 O-126ML 2SA1507 180where 2sc3902 2sa1507 EN2101E	PDF
sd1609 Abstract: sd 1609 TO126ML HSB1109 HSD1609 Contextual Info: HI-SINCERITY Spec. No. : HE6606 Issued Date : 1993.03.15 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HSD1609 NPN EPITAXIAL PLANAR TRANSISTOR Features • Low frequency high voltage amplifier • Complementary pair with HSB1109 TO-126ML	Original	HE6606 HSD1609 HSB1109 O-126ML 183oC 217oC 260oC sd1609 sd 1609 TO126ML HSB1109 HSD1609	PDF
Contextual Info: HI-SINCERITY Spec. No. : HE6602 Issued Date : 1993.03.15 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HSC3953 NPN EPITAXIAL PLANAR TRANSISTOR Description High definition CRT display video output, wide-band amplifier. TO-126ML Features • High fT: 500MHz	Original	HE6602 HSC3953 O-126ML 500MHz 120Vmin 183oC 217oC 260oC	PDF
sc2682 Abstract: HSC2682 Contextual Info: HI-SINCERITY Spec. No. : HE6626 Issued Date : 1994.12.07 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HSC2682 NPN EPITAXIAL PLANAR TRANSISTOR Description Audio frequency power amplifier, high frequency power amplifier. TO-126ML Absolute Maximum Ratings TA=25°C	Original	HE6626 HSC2682 O-126ML 183oC 217oC 260oC sc2682 HSC2682	PDF
HMPSA44V Abstract: A44V Contextual Info: HI-SINCERITY Spec. No. : HE6611 Issued Date : 1993.05.17 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HMPSA44V NPN EPITAXIAL PLANAR TRANSISTOR Description The HMPSA44V is designed for application that require high voltage. Features TO-126ML	Original	HE6611 HMPSA44V HMPSA44V O-126ML 300mV HMPSA94V 183oC 217oC 260oC A44V	PDF
sd669a Abstract: HSD669A HSB649A Contextual Info: HI-SINCERITY Spec. No. : HE6630 Issued Date : 1995.12.18 Revised Date : 2006.07.27 Page No. : 1/4 MICROELECTRONICS CORP. HSD669A NPN Epitaxial Planar Transistor Description Low frequency power amplifier complementary pair with HSB649A TO-126ML Absolute Maximum Ratings T =25°C	Original	HE6630 HSD669A HSB649A O-126ML 150oC 200oC 183oC 217oC 260oC 245oC sd669a HSD669A HSB649A	PDF

h882 Abstract: h882 transistor 5v 10w amplifier ic Shantou Huashan Electronic Devices h882 data DC06A h882 NPN Contextual Info: NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H882 █ ＡＰＰＬＩＣＡＴＩＯＮＳ Audio Frequency Power Amplifier , Switching Power Amplifier. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-126ML T stg ——Storage Temperature………………………… －55~150℃	Original	O-126ML 10VIE h882 h882 transistor 5v 10w amplifier ic Shantou Huashan Electronic Devices h882 data DC06A h882 NPN	PDF
Contextual Info: N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HBD195 █ APPLICATIONS . .Medium Power Amplifie. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-126ML Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃	Original	HBD195 O-126ML 500mA 10Msmax	PDF
h1357 Abstract: audio power amplifie Contextual Info: P N P S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H1357 █ APPLICATIONS . Audio Power Amplifie. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-126ML Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃	Original	H1357 O-126ML -500mA 10Msmax h1357 audio power amplifie	PDF
HBD437D Abstract: DSA0026081 Contextual Info: HI-SINCERITY Spec. No. : HD200201 Issued Date : 2001.04.01 Revised Date : 2005.08.16 Page No. : 1/4 MICROELECTRONICS CORP. HBD437D COMPLEMENTARY SILICON POWER TRANSISTORS Description The HBD437D is silison epitaxial-base NPN power transistor in TO-126ML plastic	Original	HD200201 HBD437D HBD437D O-126ML HBD438D. O-126ML Collecto60 183oC 217oC 260oC DSA0026081	PDF
H649A Abstract: H649 Huashan Contextual Info: P NP S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H649A █ LOW FREQUANCY POWER AMPLIFIER █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-126ML Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃	Original	H649A O-126ML -180V -160V -150mA -500mA -500mA, -50mA -10mA, -160V, H649A H649 Huashan	PDF
HSB1109 Abstract: HSD1609 sb1109 TL 188 TRANSISTOR PNP Contextual Info: HI-SINCERITY Spec. No. : HE6607 Issued Date : 1993.03.15 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HSB1109 PNP EPITAXIAL PLANAR TRANSISTOR Features • Low frequency high voltage amplifier • Complementary pair with HSD1609 TO-126ML	Original	HE6607 HSB1109 HSD1609 O-126ML 183oC 217oC 260oC HSB1109 HSD1609 sb1109 TL 188 TRANSISTOR PNP	PDF
OC 140 germanium transistor Abstract: germanium power devices corporation germanium transistors NPN OC 74 germanium transistor HSD879D Germanium Transistor Contextual Info: HI-SINCERITY Spec. No. : HD200203 Issued Date : 1996.07.15 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HSD879D SILICON NPN EPITAXIAL TYPE TRANSISTOR Description For 1.5V and 3v electronic flash use. TO-126ML Features • Charger-up time is about 1 ms faster than of a germanium transistor.	Original	HD200203 HSD879D O-126ML 183oC 217oC 260oC OC 140 germanium transistor germanium power devices corporation germanium transistors NPN OC 74 germanium transistor HSD879D Germanium Transistor	PDF
HSB649A Abstract: TL 188 TRANSISTOR PNP SB649A HSD669A Contextual Info: HI-SINCERITY Spec. No. : HE6629 Issued Date : 1995.12.18 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HSB649A SILICON PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier complementary pair with HSD669A. TO-126ML Absolute Maximum Ratings TA=25°C	Original	HE6629 HSB649A HSD669A. O-126ML 183oC 217oC 260oC HSB649A TL 188 TRANSISTOR PNP SB649A HSD669A	PDF
HSB1109 Abstract: HSD1609 Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6607 Issued Date : 1993.03.15 Revised Date : 2002.02.06 Page No. : 1/3 HSB1109 PNP EPITAXIAL PLANAR TRANSISTOR Features • Low frequency high voltage amplifier • Complementary pair with HSD1609 TO-126ML	Original	HE6607 HSB1109 HSD1609 O-126ML HSB1109 HSD1609	PDF
HSD1609 Abstract: HSB1109 Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6606 Issued Date : 1993.03.15 Revised Date : 2002.01.15 Page No. : 1/4 HSD1609 NPN EPITAXIAL PLANAR TRANSISTOR Features • Low frequency high voltage amplifier • Complementary pair with HSB1109 TO-126ML	Original	HE6606 HSD1609 HSB1109 O-126ML HSD1609 HSB1109	PDF

126ML Search Results

126ML Price and Stock

Glenair Inc 445VL126ML1208

COI DO1608C126MLC

Glenair Inc 445VK126ML1813

Glenair Inc 445VK126ML1611

Glenair Inc 445VZ126ML2217

126ML Datasheets Context Search

C5201 transistor

TL 188 TRANSISTOR PNP

H11-44

hb123d

B1143

lb123d

2sc3902

sd1609

sc2682

HMPSA44V

sd669a

h882

h1357

HBD437D

H649A

HSB1109

OC 140 germanium transistor

HSB649A

HSB1109

HSD1609