126ML Search Results

C5201 transistor

Abstract: c5201 Marking 8A 737 TRANSISTOR Transistor C5201 k 1457 BTC5201D3
Contextual Info: Spec. No. : C653D3 Issued Date : 2003.10.03 CYStech Electronics Corp. Revised Date : Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTC5201D3 Features • Low VCE sat • High BVCEO • Excellent current gain characteristics Symbol Outline TO-126ML

TL 188 TRANSISTOR PNP

Abstract: HTIP117D
Contextual Info: HI-SINCERITY Spec. No. : HD200204 Issued Date : 2002.04.01 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HTIP117D PNP EPITAXIAL PLANAR TRANSISTOR Description TO-126ML The HTIP117D is designed for use in general purpose amplifier and low-speed

H11-44

Contextual Info: PN P S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H1144 █ APPLICATIONS Medium frequency power amplifier，Medium Seed switching. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-126ML Tstg——Storage Temperature………………………… -55~150℃

hb123d

Contextual Info: NPN S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HB123D █ APPLICATIONS Power Amplifie █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-126ML Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃

Contextual Info: N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HM13002 █ HIGH VOLTAGE SWITCH MODE APPLICICATIONS High Speed Switching Suitable for Switching Regulator and Montor Control █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-126ML

Contextual Info: NPN S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H2682 █ APPLICATIONS . Audio Power Amplifie. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-126ML Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃

B1143

Abstract: transistor D1683 2SD 1143 2SB1143S
Contextual Info: Ordering number : EN2063C 2SB1143/2SD1683 Bipolar Transistor http://onsemi.com – 50V, (–)4A, Low VCE(sat), (PNP)NPN Single TO-126ML Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • • Adoption of FBET, MBIT processes

lb123d

Contextual Info: DC COMPONENTS CO., LTD. LB123D DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for high voltage, high speed switching circuits, and amplifier applications. TO-126ML Pinning .163 4.12 .153(3.87) 1 = Emitter

2sc3902

Abstract: 2sa1507 EN2101E
Contextual Info: Ordering number : EN2101E 2SA1507/2SC3902 Bipolar Transistor http://onsemi.com – 160V, (–)1.5A, Low VCE(sat), (PNP)NPN Single TO-126ML Applications • Color TV audio output, converters, inverters Features • • • Large current capacity • Adoption of FBET and MBIT process

sd1609

Abstract: sd 1609 TO126ML HSB1109 HSD1609
Contextual Info: HI-SINCERITY Spec. No. : HE6606 Issued Date : 1993.03.15 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HSD1609 NPN EPITAXIAL PLANAR TRANSISTOR Features • Low frequency high voltage amplifier • Complementary pair with HSB1109 TO-126ML

Contextual Info: HI-SINCERITY Spec. No. : HE6602 Issued Date : 1993.03.15 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HSC3953 NPN EPITAXIAL PLANAR TRANSISTOR Description High definition CRT display video output, wide-band amplifier. TO-126ML Features • High fT: 500MHz

sc2682

Abstract: HSC2682
Contextual Info: HI-SINCERITY Spec. No. : HE6626 Issued Date : 1994.12.07 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HSC2682 NPN EPITAXIAL PLANAR TRANSISTOR Description Audio frequency power amplifier, high frequency power amplifier. TO-126ML Absolute Maximum Ratings TA=25°C

HMPSA44V

Abstract: A44V
Contextual Info: HI-SINCERITY Spec. No. : HE6611 Issued Date : 1993.05.17 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HMPSA44V NPN EPITAXIAL PLANAR TRANSISTOR Description The HMPSA44V is designed for application that require high voltage. Features TO-126ML

sd669a

Abstract: HSD669A HSB649A
Contextual Info: HI-SINCERITY Spec. No. : HE6630 Issued Date : 1995.12.18 Revised Date : 2006.07.27 Page No. : 1/4 MICROELECTRONICS CORP. HSD669A NPN Epitaxial Planar Transistor Description Low frequency power amplifier complementary pair with HSB649A TO-126ML Absolute Maximum Ratings T =25°C

h882

Abstract: h882 transistor 5v 10w amplifier ic Shantou Huashan Electronic Devices h882 data DC06A h882 NPN
Contextual Info: NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H882 █ ＡＰＰＬＩＣＡＴＩＯＮＳ Audio Frequency Power Amplifier , Switching Power Amplifier. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-126ML T stg ——Storage Temperature………………………… －55~150℃

Contextual Info: N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HBD195 █ APPLICATIONS . .Medium Power Amplifie. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-126ML Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃

h1357

Abstract: audio power amplifie
Contextual Info: P N P S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H1357 █ APPLICATIONS . Audio Power Amplifie. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-126ML Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃

HBD437D

Abstract: DSA0026081
Contextual Info: HI-SINCERITY Spec. No. : HD200201 Issued Date : 2001.04.01 Revised Date : 2005.08.16 Page No. : 1/4 MICROELECTRONICS CORP. HBD437D COMPLEMENTARY SILICON POWER TRANSISTORS Description The HBD437D is silison epitaxial-base NPN power transistor in TO-126ML plastic

H649A

Abstract: H649 Huashan
Contextual Info: P NP S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H649A █ LOW FREQUANCY POWER AMPLIFIER █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-126ML Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃

HSB1109

Abstract: HSD1609 sb1109 TL 188 TRANSISTOR PNP
Contextual Info: HI-SINCERITY Spec. No. : HE6607 Issued Date : 1993.03.15 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HSB1109 PNP EPITAXIAL PLANAR TRANSISTOR Features • Low frequency high voltage amplifier • Complementary pair with HSD1609 TO-126ML

OC 140 germanium transistor

Abstract: germanium power devices corporation germanium transistors NPN OC 74 germanium transistor HSD879D Germanium Transistor
Contextual Info: HI-SINCERITY Spec. No. : HD200203 Issued Date : 1996.07.15 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HSD879D SILICON NPN EPITAXIAL TYPE TRANSISTOR Description For 1.5V and 3v electronic flash use. TO-126ML Features • Charger-up time is about 1 ms faster than of a germanium transistor.

HSB649A

Abstract: TL 188 TRANSISTOR PNP SB649A HSD669A
Contextual Info: HI-SINCERITY Spec. No. : HE6629 Issued Date : 1995.12.18 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HSB649A SILICON PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier complementary pair with HSD669A. TO-126ML Absolute Maximum Ratings TA=25°C

HSB1109

Abstract: HSD1609
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6607 Issued Date : 1993.03.15 Revised Date : 2002.02.06 Page No. : 1/3 HSB1109 PNP EPITAXIAL PLANAR TRANSISTOR Features • Low frequency high voltage amplifier • Complementary pair with HSD1609 TO-126ML

HSD1609

Abstract: HSB1109
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6606 Issued Date : 1993.03.15 Revised Date : 2002.01.15 Page No. : 1/4 HSD1609 NPN EPITAXIAL PLANAR TRANSISTOR Features • Low frequency high voltage amplifier • Complementary pair with HSB1109 TO-126ML