TO126ML Search Results

c3807

Abstract: C3898 k443 d16810 K545 K1311 b1127 C4146 K2073 B986
Contextual Info: sa H yo ^ Qui c = V < S ö 1ect 1on Gu 1de S P A \ v \ ÇE0 i cx v m A )\ 1 1 0 2 0 1 5 1 8 5 0 K7 1 5 K2 0 7 4 K2 3 9 5 2 5 K1 5 7 8 K212 K3 1 5 K4 0 4 K4 2 7 K444 K2270 3 0 2 0 C4 4 3 3 5 7 0 0 8 0 0 A1765 C4 4 5 4 B8 0 8 D10 12 B12 9 6 D19 3 6 3 0 K3 0 4

TO-126LP

Contextual Info: Precautions when handling transistors 1. Lead forming and cutting Sanyo transistor products are available in a range of lead configurations and lengths. As required, however, you can form or cut package leads to meet the needs of specific applications. As a general precaution, you should always handle

SB01

Abstract: SB05 SB20 SB30 SB40 SB02W03S S09A S02 sanyo
Contextual Info: Schottky Barrier Diodes Shortform Table Lead Type Package Series CONTENTS •Packages ■Quick selection guide ■Recommendation circuit diagram ■Lineup according to packages ・TP ・SPA ・NP ・MP ・NMP ・TO-126 ・FLP 2 3 4 5 6 7 7 8 9 10 Mar.2008

TRANSISTOR D882

Abstract: transistor D882 datasheet D882 SPECIFICATION D882 TRANSISTOR PIN D882 d882 npn transistor h D882 D882 TRANSISTOR d882 equivalent marking d882
Contextual Info: CYStech Electronics Corp. Spec. No. : C848D3-H Issued Date : 2005.05.04 Revised Date : Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD882D3 Features • Low VCE sat , VCE(sat)=0.25 V (typical), at IC / IB = 2A / 200mA • Excellent current gain characteristics

C5201 transistor

Abstract: c5201 Marking 8A 737 TRANSISTOR Transistor C5201 k 1457 BTC5201D3
Contextual Info: Spec. No. : C653D3 Issued Date : 2003.10.03 CYStech Electronics Corp. Revised Date : Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTC5201D3 Features • Low VCE sat • High BVCEO • Excellent current gain characteristics Symbol Outline TO-126ML

EN3643

Abstract: 2SA1749
Contextual Info: Ordering number:EN3643 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1749/2SC4564 High-Definition CRT Display Video Output Applications Features Package Dimensions • High fT : fT=400MHz typ . · High breakdown voltage : VCEO≥200V min. · High current.

B1143

Abstract: transistor D1683 2sb1143 D1683 TRANSISTOR MARKING NK 2SB1143S 2SD1642 2SD1683 EN2063C 7516a
Contextual Info: 2SB1143/2SD1683 Ordering number : EN2063C SANYO Semiconductors DATA SHEET PNP/NPN Epitaxial Planar Silicon Transistor 2SB1143/2SD1683 50V/4A Switching Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features

TL 188 TRANSISTOR PNP

Abstract: HTIP117D
Contextual Info: HI-SINCERITY Spec. No. : HD200204 Issued Date : 2002.04.01 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HTIP117D PNP EPITAXIAL PLANAR TRANSISTOR Description TO-126ML The HTIP117D is designed for use in general purpose amplifier and low-speed

d1857a

Abstract: D1857 BTB12 BTD1857AD3
Contextual Info: CYStech Electronics Corp. Spec. No. : C855D3 Issued Date : 2004.09.21 Revised Date :2005.04.20 Page No. : 1/4 Silicon NPN Epitaxial Planar Transistor BTD1857AD3 Description • High BVCEO • High current capability • Complementary to BTB1236AD3 • Pb-free package

2SA1833

Abstract: 2SA1842 2SC4614 2SA1770 2SA1812 2SA1772 2SA1773 2SA1775 2SA1776 2SA1777
Contextual Info: 50 O V 2 5 U 2SA1770 Vc b o VcEO V (V) HV SW -180 !C C D C ) (A) *EPfàTc=25t;) Pc Pc* (W) (W) -160 -1.5 1 M ICBO (max) (*A) VcB (V) -1 -120 M (min) 1i ft (max) Vc e (V) 100 400 -5 (Ta=25°C) Ic / I e (A) [*EPÍátyp (max) (V) (V) ic (A) -0.1 -0.5 -1.2

H11-44

Contextual Info: PN P S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H1144 █ APPLICATIONS Medium frequency power amplifier，Medium Seed switching. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-126ML Tstg——Storage Temperature………………………… -55~150℃

hb123d

Contextual Info: NPN S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HB123D █ APPLICATIONS Power Amplifie █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-126ML Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃

Contextual Info: N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HM13002 █ HIGH VOLTAGE SWITCH MODE APPLICICATIONS High Speed Switching Suitable for Switching Regulator and Montor Control █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-126ML

transistor 649A

Abstract: H649A 649a HS649A H649 transistor 160v 1.5a pnp 2SB649A
Contextual Info: PNP 汕头华汕电子器件有限公司 SILICON TRANSISTOR 649A 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：A117AJ-00 芯片厚度：240±20µm 管芯尺寸：1170x1170µm 2 焊位尺寸：B 极 272×192µm 2；E 极 226×298µm 2

transistor 772

Abstract: 772 transistor H772 2SB772HS772H772 H*772 2SB772 HS772
Contextual Info: PNP 汕头华汕电子器件有限公司 SILICON TRANSISTOR 772 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：A100AJ-00 芯片厚度：240±20µm 管芯尺寸：1000x1000µm 2 焊位尺寸：B 极 215×215µm 2；E 极 210×210µm 2

Contextual Info: How To Handle Transistors Although SAN YO makes all possible efforts to assure quality and reliability in its development and production of transistor products, transistor reliability depends not only on the inherent factors in the transistors but also on the

B1143

Abstract: transistor D1683 2SD 1143 2SB1143S
Contextual Info: Ordering number : EN2063C 2SB1143/2SD1683 Bipolar Transistor http://onsemi.com – 50V, (–)4A, Low VCE(sat), (PNP)NPN Single TO-126ML Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • • Adoption of FBET, MBIT processes

2SJ609

Abstract: TA-2920
Contextual Info: Ordering number : ENN6671 2SJ609 P-Channel Silicon MOSFET 2SJ609 DC / DC Converter Applications Features • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2190 [2SJ609] 8.0 3.3 1.4 4.0 1.0 1.0 1.5 7.5 3.0 11.0 • Package Dimensions

2SA1536

Abstract: 2SC3951 ITR03875 ITR03876
Contextual Info: Ordering number:ENN2435B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1536/2SC3951 High-Definition CRT Display Video Output Applications Applications Package Dimensions • High definition CRT display video output, wide-band amplifier. unit:mm 2042B [2SA1536/2SC3951]

2SK3449

Contextual Info: Ordering number : ENN6672 2SK3449 N-Channel Silicon MOSFET 2SK3449 DC / DC Converter Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2190 [2SK3449] 8.0 3.3 1.5 7.5 3.0 11.0 1.4 4.0 1.0

IC 7667

Abstract: 2SC5951
Contextual Info: Ordering number : ENN7667 2SC5951 NPN Triple Diffused Planar Silicon Transistor 2SC5951 Switching Regulator Applications Features • • High breakdown voltage. High-speed switching. Wide ASO. Adoption of MBIT process. unit : mm 2042B [2SC5951] 8.0 4.0 1.0

lb123d

Contextual Info: DC COMPONENTS CO., LTD. LB123D DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for high voltage, high speed switching circuits, and amplifier applications. TO-126ML Pinning .163 4.12 .153(3.87) 1 = Emitter

2042A

Abstract: 2SA1537
Contextual Info: Ordering number:EN2436B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1537/2SC3952 High-Definition CRT Display Video Output Applications Applications Package Dimensions • High-definition CRT display video output, wide-band amplifier. unit:mm 2042A [2SA1537/2SC3952]

SC3416

Abstract: tt2202 2SA1371 2SC3790 2SC4732 2SC5291 2SA1829 2SC2857 2SC4075 TD-220F
Contextual Info: SA$iYO Transistors for TV Display Video Output Us P c i t u r c s ^Excellent HP characteristic. * S m ll reverse tn n sfer capacitaac*. *C c«*lei*ntiry WP and NW type*. ♦ Adoption of MBIT, FB€T processes. ^Highly resistant to d ie le c tric breakdown.