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    H649A Datasheets (1)

    Shantou Huashan Electronic Devices
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    H649A
    		Shantou Huashan Electronic Devices Low Frequancy Power Amplifier Original PDF 27.42KB 1

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    H649A

    Abstract: H649 Huashan
    Contextual Info: P NP S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H649A █ LOW FREQUANCY POWER AMPLIFIER █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-126ML Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃


    Original     		h649ao-126ml-180v-160v+6-150ma-500ma-50ma-10mah649huashan PDF

    transistor 649A

    Abstract: H649A 649a HS649A H649 transistor 160v 1.5a pnp 2SB649A
    Contextual Info: PNP 汕头华汕电子器件有限公司 SILICON TRANSISTOR 649A 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：A117AJ-00 芯片厚度：240±20µm 管芯尺寸：1170x1170µm 2 焊位尺寸：B 极 272×192µm 2；E 极 226×298µm 2


    Original     		100mma117aj-002sb649ahs649ah649ao-126to-126ml+9-180v-160vtransistor 649ah649a649ahs649ah649transistor 160v 1.5a pnp2sb649a PDF

    transistor 649A

    Abstract: H649A 649A H649 HS649A 2SB649A transistor 160v 1.5a pnp A080BJ-00
    Contextual Info: PNP 汕头华汕电子器件有限公司 SILICON TRANSISTOR 649A 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：A080BJ-00 芯片厚度：240±20µm 管芯尺寸：800x800µm 2 焊位尺寸：B 极 124×124µm 2；E 极 221×110µm 2


    Original     		100mma080bj-002sb649ahs649ah649ao-126to-126ml+9-180v-160vtransistor 649ah649a649ah649hs649a2sb649atransistor 160v 1.5a pnp PDF