BC817W Search Results

Contextual Info: BC807W PNP General Purpose Transistor FEATURES • Ideally suited for automatic insertion • Epitaxial planar die construction • Complementary to BC817W MECHANICAL DATA • Case: SOT-323 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, No Br. Sb. CI

Transistor 8fc

Abstract: marking A1 TRANSISTOR transistor 6B transistor marking MH 6C TRANSISTOR MARKING marking AF BC817W
Contextual Info: BC817W NPN Transistor Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product Description The BC817W is designed for switching and AF amplifier application, suitable for driver storages and low power output storages. Features * * * * For General AF Appliacations

BC817W

Abstract: BC818W v 250 c 45
Contextual Info: BC817W / BC818W NPN Silicon Epitaxial Planar Transistors for general purpose and switching applications These transistors are subdivided into three groups –16, -25, -40 according to their current gain. Absolute Maximum Ratings Ta = 25 OC Parameter Collector Base Voltage

BC817W-40

Abstract: BC807W BC817W
Contextual Info: SEMICONDUCTOR BC817W TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES M Complementary to BC807W. B M D J SYMBOL RATING UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V

Contextual Info: bbS3T31 QDE4M5Q 73T » A P X Philips Semiconductors NPN general purpose transistor BC817W; BC818W AMER PHILIPS/DISCRETE FEATURES Product specification b7E D PIN CONFIGURATION • High current CM a; • S -m in i package. 1 D ESCRIPTION NPN transistor in a plastic SOT323

marking 5bs

Abstract: BC818W VSO05561 BC807-16W BC807-25W BC807-40W BC807W BC808-16W BC808-25W BC808-40W
Contextual Info: BC807W, BC808W PNP Silicon AF Transistors 3
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage 2
Complementary types: BC817W, BC818W NPN 1 Pin Configuration VSO05561 Type Marking Package

BC807

Contextual Info: BC807-16W BC807-25W BC807-40W SOT-323 Transistor PNP 1. BASE 2. EMITTER SOT-323 3. COLLECTOR Features — — — Ldeally suited for automatic insertion epitaxial planar die construction complementary to BC817W MARKING: 16W:5A; 25W:5B; 40W:5C MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

BC817W

Contextual Info: SEMICONDUCTOR BC817W TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B M FEATURES M ・Complementary to BC807W. D J G A 2 RATING UNIT VCBO 50 V C SYMBOL Collector-Base Voltage L P MAXIMUM RATING Ta=25℃

transistor BA RW

Contextual Info: Product specification Philips S em iconductors BC817W; BC818W NPN general purpose transistor PIN CONFIGURATION FEATURES • H igh c u rre n t • S - m in i p a c k a g e . R> R 1 DESCRIPTION °“C N P N tra n s is to r in a p la s tic S O T 3 2 3 package.

BC817W

Abstract: BC818W
Contextual Info: BC817W / BC818W NPN Silicon Epitaxial Planar Transistors for general purpose and switching applications These transistors are subdivided into three groups –16, -25, -40 according to their current gain. Absolute Maximum Ratings Ta = 25 OC Parameter Collector Base Voltage

npn 6bt

Abstract: transistor 6bt TRANSISTOR 6CT marking 6CT TRANSISTOR 6CT 27 marking code 6ct 6BT MARKING Q 817 BC818W BC817-16W
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BC817W; BC818W NPN general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 05 Philips Semiconductors Product specification

SMD TRANSISTOR MARKING 6C

Abstract: smd transistor 6B SMD TRANSISTOR MARKING 6B transistor SMD 6b 6b smd transistor MARKING SMD TRANSISTOR 6c transistor smd 6C smd transistor 6c TRANSISTOR 6B smd SMD 6b
Contextual Info: Transistors IC SMD Type General Purpose Transistor BC817W Features High current. Low voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage IC = 10 mA

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors BC807-16W BC807-25W BC807-40W TRANSISTOR PNP SOT-323 FEATURES Ldeally suited for automatic insertion z epitaxial planar die construction z complementary to BC817W

BC807-16W

Abstract: BC807-25W BC807-40W BC807W BC817W
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors BC807-16W BC807-25W BC807-40W TRANSISTOR PNP SOT-323 FEATURES Ldeally suited for automatic insertion z epitaxial planar die construction z complementary to BC817W

5Ct marking code

Abstract: marking 5Ct sot BC-818W marking 5cs MARKING 5ct bc808-40 diotec
Contextual Info: BC817W / BC818W BC817W / BC818W Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN NPN Version 2010-10-22 2±0.1 0.3 1±0.1 Type Code 1 1.25±0.1 2.1±0.1 3 2 1.3 Dimensions - Maße [mm]

Q62702-C2325

Contextual Info: SIEMENS BC 807-16W PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain * Low collector-emitter saturation voltage • Complementary types: BC817W, BC818W NPN 2 Q62702-C2325 1 =B BC 807-25W 5Bs Q62702-C2326

BC807-16W

Abstract: BC807-25W BC807-40W BC807W BC817W 5B marking transistor
Contextual Info: BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor BC807W FEATURES z High current max.500mA z Low voltage. z Complements the BC817W. Pb Lead-free APPLICATIONS z For general purpose amplification and switching. SOT-323 ORDERING INFORMATION

bc817-40w

Abstract: marking 6b philips
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BC817W series NPN general purpose transistors Product specification Supersedes data of 1999 Apr 15 2004 Feb 25 Philips Semiconductors Product specification NPN general purpose transistors BC817W series

c33725

Abstract: c33740 C33740 NPN transistor transistor c33725 c33725 transistor BC337-40 C33740 transistor c33740 c33725 philips C33740 transistor C33740 NPN transistor datasheet
Contextual Info: BC817; BC817W; BC337 45 V, 500 mA NPN general-purpose transistors Rev. 05 — 21 January 2005 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors. Table 1: Product overview Type number Package PNP complement Philips

6C TRANSISTOR MARKING

Abstract: BC817-40W lem HA BC817-16W BC817-25W BC817W BC818-16W BC818-25W BC818W UBB012
Contextual Info: GOEMHSG Philips Sem iconductors 73T IAPX Product specificati on NPN general purpose transistor BC817W; BC818W AMER PHIL I P S / D I S C R E T E FEATURES b7E ]> PIN CONFIGURATION • High current • S- mini package. j=b n DESCRIPTION NPN transistor in a plastic SOT323

marking 6bs

Abstract: sot323 marking code A.C
Contextual Info: BC817W, BC818W NPN Silicon AF Transistors 3 • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage 2 • Complementary types: BC807W, BC808W PNP 1 Pin Configuration VSO05561 Type Marking

5Cs transistor

Abstract: Q62702-C2328 C2328 transistor C2330 transistor 5cs transistor 5bs Q62702-C2330 c2330 1B marking transistor TRANSISTOR C2328
Contextual Info: BC 807-16W PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC817W, BC818W NPN Type Marking Ordering Code Pin Configuration Package

BC807-16W

Abstract: BC807-25W BC807-40W BC807W BC817W
Contextual Info: BC807W PNP General Purpose Transistor FEATURES • Ideally suited for automatic insertion • Epitaxial planar die construction • Complementary to BC817W MECHANICAL DATA • Case: SOT-323 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, No Br. Sb. CI

BC807w-40

Abstract: BC807W BC817W
Contextual Info: SEMICONDUCTOR BC807W TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES M ・Complementary to BC817W. B M D J 3 1 G A 2 MAXIMUM RATING Ta=25℃ RATING UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage