BC143 TRANSISTOR Search Results

BC144

Abstract: bc143 transistor BC143 5C p T445 acbo
Contextual Info: BC143 GENERAL DESCRIPTION : The BC143 is a PNP silicon planar epitaxial transistor. It features low saturation voltage, low collector cutoff current a;nd high breakdown voltage. It is intended for use in driver stage of high power audio amplifiers. It can be supplied together with

bc143 transistor

Abstract: bc143 transistor BC143
Contextual Info: BC143 AUDIO AMPLIFIER DESCRIPTION The BC143 is a silicon planar epitaxial PNP transistor specially designed for use in the driver of high power audio amplifiers. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-base Voltage IE = 0

Contextual Info: MICRO GENERAL DESCRIPTION : The BC143 Is a PNP silicon planar epitaxial transistor. It features low saturation voltage, low collector cutoff current a:nd high breakdown voltage. It is intended for use in driver stage of high power audio amplifiers. It can be supplied together with

bc144

Abstract: bc143 transistor transistor bC144 BC-144 bc143
Contextual Info: MICRO GENERAL DESCRIPTION : The BC143 Is a PNP silicon planar epitaxial transistor. It features low saturation voltage, low collector cutoff current a:nd high breakdown voltage. It is intended for use in driver stage of high power audio amplifiers. It can be supplied together with

bc142 transistor

Abstract: BC142 bc143 transistor bc143 transistor BC143 142-BC143
Contextual Info: MICRO GENERAL DESCRIPTION ; The BC142 is a NPN silicon planar epitaxial transistor. It features low saturation voltage, low collector cut­ off current and high breakdown voltage. It is intended for use in driver stages of high power audio amplifiers. It can

transistor BC142

Abstract: BC142 BC143 bc143 transistor
Contextual Info: BC142 GENERAL DESCRIPTION : The BC142 is a NPN silicon planar epitaxial transistor. It features low saturation voltage, low collector cut­ off current and high breakdown voltage. It is intended for use in driver stages of high power audio amplifiers. It can

BC140 equivalent

Abstract: 2n3019 equivalent BC107 equivalent transistors bcy59 equivalent equivalent to BC177 BC141 equivalent 2n930 equivalent BC107 pnp equivalent bc109 equivalent BC160 equivalent
Contextual Info: Discrete Devices Transistors Cont. European “Pro Electron” Types Type Near Equivalent Polarity Pkg. Type Near Equivalent Polarity Pkg. BC107 BC107A BC107B BC108 BC108A 2 N 2484 2N930 2N930 2 N 2484 2N930 NPN NPN NPN NPN NPN T O -18 T O -18 T O -18 T O -18

ME0412

Abstract: BC116 bc153 BC154 ME0413 ME0492 BC126 me0411 ME0402 V405A
Contextual Info: M icro - Electronics Sem iconductors PN P Transistors PN P General Purpose Transistors REFER EN C E T A B L E Code o o >> V EBO V BC153 BC154 40 40 5 5 50 160 BCY70 BCY71 BCY72 40 45 25 5 5 5 50 100 50 BFX48 30 5 6 6 5 45 45 25 ME0411 ME0412 ME0413 h FE min.

transistor BC287

Abstract: BC286 BC287 2N2907A fairchild 2n3568 BC527-25 BC537 BC537-16 SE6020 bc142 transistor
Contextual Info: FAIRCHILD TRANSISTORS SMALL SIGNAL GENERAL PURPOSE AMPLIFIER AND SWITCHING TRANSISTORS BY ASCENDING VcEO (Cont’d) (ALSO SEE LOW LEVEL AND HIGH VOLTAGE SECTION) Item 1 DEVIC E NO. Pole rlty NPN PNP BC141-6 ^FE @ ic v CEO (V c e r ) (hfe) V mA Min/Max Min

sx3704

Abstract: BRC157 BRC-116 Germanium Diode aa143 1n4148 ITT TRANSISTOR BC147 BC107/spice model bf199 BY238 SN76226DN tungsram
Contextual Info: rh is Booklet • • • ue to fluctuations in availability, some types of semiconductors used in Thorn products have >f necessity changed from those originally specified and quoted in service literature. This )lus the fact that some service replacements are

BF178

Abstract: bf179 BFT79 BF177 2N2219 2N2905 bf338 BFQ36 BC325 2N3571 2N3572
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450

ME0412

Abstract: ME0413 V405A BC153 me0411 BC126 2sc 1091 BC154 bc143 ME0404-2
Contextual Info: M icro - Electronics Sem iconductors PN P Transistors P N P General Purpose Transistors REFERENCE TA B LE o o >> V EBO V min. max. BC153 BC154 40 40 5 5 50 160 _ BCY70 BCY71 BCY72 40 45 25 5 5 5 50 100 50 BFX48 30 5 Code ME0411 ME0412 ME0413 6 6 5 45 45

BC140 equivalent

Abstract: 2N2484 equivalent transistors BC141 equivalent bcy59 equivalent bc160 equivalent 2n930 equivalent BC107 equivalent transistors 2n3019 equivalent BC177 equivalent BC107 pnp equivalent
Contextual Info: Discrete Devices Transistors Cont. Low Level Amplifiers Maximum Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts HpE *C Min/Max mA V c E (S a t) @ Ic/lß Volts mA/mA ft MHz Min NF@f Cob pF Max dB

bcy59 equivalent

Abstract: BC140 equivalent 2N3913 BCY95 bc140-10 2n3019 equivalent 2N2708 2N328A BC109C NPN BCY22
Contextual Info: Discrete Devices Transistors Cont. Choppers Maximum Ratings Polarity PD Ambient h f e @>c VCE V e B Volts Volts Min/Max mA II Type Electrical Characteristics @ 25° C V c E (S a t) @ Ic/lß mA/mA — Vq @Ib mV rd@l B Cob Package pF mA Ohms mA - 14 Max 2N943

F13S

Abstract: BFQ35 BC177 pnp transistor transistor bc303 transistor t05 BF179 2n3440 equivalent bc304 equivalent bc143 equivalent 2N3570
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450

C736

Abstract: C495 transistor bc303 equivalent 2N2222A 026 C735 bc143 equivalent bc143 C644 equivalent transistor 2N1711 transistor c633
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450

BC140 equivalent

Abstract: BCY34 2N328A BCY31 bcy59 equivalent BC109 MOTOROLA BCY25 DH3725CN bc108c equivalent 2N3133 MOTOROLA
Contextual Info: Discrete Devices Transistors C ont. Medium Current, High-Speed Amplifiers Maximum Ratings Type Polarity PD Ambient mW Electrical Characteristics @ 25° C VCB VCE VEB Volts Volts Volts hfe VcE(Sat) @ Ic/lß @ ic Min/Max mA Volts mA/mA ft MHz Min Cob pF tON tOFF

2N4252

Abstract: 2N3570 2N3571 pnp hfe 70 BFT69 2N3572 048J 2N3571 NPN bc143 2N918
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *T t i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450

EQUIVALENT TRANSISTOR bc109c

Abstract: equivalent transistor 2N1711 Transistor BC107 motorola bc109 Transistor Equivalent list EQUIVALENT TRANSISTOR bc108 Transistor BC107b motorola TRANSISTOR pnp BC140 TRANSISTOR BC140 BC140 equivalent transistor bc107b equivalent
Contextual Info: Discrete Devices Transistors Cont. Low Level Amplifiers Maximum Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts HpE *C Min/Max mA V c E (S a t) @ Ic/lß Volts mA/mA ft MHz Min NF@f Cob pF Max dB

C495 transistor

Abstract: BF194 2N4996 BF194 equivalent BF195 bf357 BF597 BF195 equivalent BF594 transistor c495
Contextual Info: Silect High Frequency Transistors Maximum Ratings Device Type Case outline B V PTOT in brackets CBO ic S j o < hFE Ic BF594 (9) V V mA mW 30 20 30 250 V 1 10 BF595 (9) 30 20 30 250 35 BF597 (9) 40 25 30 360 38 2N4996 (2) T1S02A (2) 30 30 18 50 12 30 250

EQUIVALENT TRANSISTOR bc109c

Abstract: TRANSISTOR pnp BC140 TRANSISTOR BC140 BC140 equivalent TRANSISTOR BC141 2N1026 EQUIVALENT TRANSISTOR bc108 bcy59 equivalent bcy31 BC177 pnp transistor
Contextual Info: Discrete Devices Transistors Cont. Low Level Amplifiers Maxim um Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts V c E (S a t) @ Ic / lß H p E *C Min/Max mA Volts m A/m A ft MHz Min NF@f Cob pF

2N3053 equivalent

Abstract: bf258 equivalent 2N2219 2N2905 BC107 equivalent transistors bc109 equivalent BF178 BC107 pnp equivalent BC177 equivalent bc303 f-002
Contextual Info: Metal Can Complementary Pairs Maximum ratin ps BV Case | Device Type Polarity Core Drivers BV BV CBO CEO EBO ICM V V V mA hFE1 Ic mA min. max. Ic mA HFE2 fT min. min. max. MHz VCE sat IC mA V 2N3724A NPN 2N3725A NPN T039 T039 50 80 30 50 6 6 1200 1200 100

BC177 NPN transistor

Abstract: BC178 TRANSISTOR bc108 bc325 bf179 BF177 transistor NPN BC178 applications of Transistor BC108 BC326 BFQ35
Contextual Info: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a small extra

2N290

Abstract: bc143 2N3570 2N3571 2N3572 2N4252 2N4253 2N918 BFT79 T018
Contextual Info: Metal Can Device Type 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0-48 0 2N3570 2N3571 2N3572 *T t i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T 072 T 072 T 072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200