BC109C NPN Search Results

MLED96

Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B

Contextual Info: BC109C Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)30 I(C) Max. (A)200m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)15nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

bc109c

Abstract: BC107 characteristic BC109C MOTOROLA bc108b BC107A TR BC c108b 109C
Contextual Info: BC107, A, B thru BC109C M A XIM U M RATINGS Rating C o lle c to r-E m itte r V o lta g e Symbol BC 107 BC 108 BC 109C Unit v CEO 45 25 25 V dc C o lle c to r-B a s e V olta g e v CBO 50 30 30 Vdc E m itte r-B a s e V olta g e v EBO 6 5 5 C o lle c to r C u rre n t — C o n tin u o u s

TRANSISTOR bc107 current gain

Abstract: bc107a bc109 bc109c BC108B bc108a bc108c BC107B transistor TO-92 bc108 transistor bc107b
Contextual Info: Philips Semiconductors Product specification NPN general purpose transistors BC107; BC108; BC109 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 45 V). 1 APPLICATIONS DESCRIPTION emitter 2 base 3 collector, connected to the case • General purpose switching and amplification.

bc108b

Abstract: bc109c bc107 Transistor BC107 NPN BC108B transistor transistor bc107b for transistor bc107 bc109 Transistor BC109 BC107B
Contextual Info: BC107,A,B BC108B,C BC109B,C NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BC107, BC108, BC109 series types are small signal NPN silicon transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier

Transistor BC109

Abstract: 8C109 BC109 applications of Transistor BC108 TRANSISTOR bc108 Transistor BC107 BC108 transistor BC107A BC107 bc109c
Contextual Info: Datasheet 1 BC108,A,B,C BC1 0 9 , B, C BC 0 7 , A , B E O l l ll U ff H V w V lI l1 semiconductor Corp- NPN SI LI CON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 1 JEDEC T O - 8 CASE Manufacturers of World Class Discrete Semiconductors

TRANSISTOR bc108

Abstract: BC107 Transistor application notes transistor BC107 specifications BC109c transistor Transistor BC107 BC109C BC107A Transistor BC109 BC108 applications of Transistor BC108
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BC107; BC108; BC109 NPN general purpose transistors Product specification Supersedes data of 1997 May 01 File under Discrete Semiconductors, SC04 1997 Jun 03 Philips Semiconductors Product specification NPN general purpose transistors

transistor BC107 specifications

Abstract: BC107 Transistor application notes TRANSISTOR bc108 Transistor BC107 TRANSISTOR DATASHEET BC107B BC109c TRANSISTOR bc107 current gain BC107 equivalent transistors DATASHEET Transistor BC109 symbol transistor BC108
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BC107; BC108; BC109 NPN general purpose transistors Product specification Supersedes data of 1997 Jun 03 File under Discrete Semiconductors, SC04 1997 Sep 03 Philips Semiconductors Product specification NPN general purpose transistors

bc109b datasheet

Abstract: BC337 BC547 bc237 bc546 bc108 TO-92 bc108b equivalent bc546 equivalent BC109B equivalent 2PC945K BC108 to92 2PC945P
Contextual Info: Philips Semiconductors Small-signal Transistors Selection guide LEADED DEVICES NPN GENERAL PURPOSE LOW-POWER TRANSISTORS TYPE NUMBER PACKAGE VCEO max. V IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) 800 60 2N2484 TO-18 60 50 360 250 2N4124

BC140 equivalent

Abstract: 2n3019 equivalent BC107 equivalent transistors bcy59 equivalent equivalent to BC177 BC141 equivalent 2n930 equivalent BC107 pnp equivalent bc109 equivalent BC160 equivalent
Contextual Info: Discrete Devices Transistors Cont. European “Pro Electron” Types Type Near Equivalent Polarity Pkg. Type Near Equivalent Polarity Pkg. BC107 BC107A BC107B BC108 BC108A 2 N 2484 2N930 2N930 2 N 2484 2N930 NPN NPN NPN NPN NPN T O -18 T O -18 T O -18 T O -18

BC548C

Abstract: BC107A BC108A BC108b ZTX301
Contextual Info: SEM ICO N D U CTOR DICE NPN SMALL SIGNAL TRANSISTORS V CBO V CEO h FE ^CBO V CE sat! at Dice type Min. Min. Wax. at VCB VCE at lc Volts Volts nA Volts Min. Max. mA Volts Volts mA BC546A BC546B ZTX304 BCY65EA BC182 BC107A BC107B BC237 BC547A BC547B BC550B BC550C

Bc177a

Contextual Info: 37E D SEMELAB LTD fll331fl7 DDD0031 5 ISMLB - y - X J - 01 — type No. Package Vc e o •c cont hFEc PD V c e /'C B C1 0 7 BC107A BC107B BC108 BC108A SCRE E N SCREEN SCREEN SCRE E N SCREEN NPN NPN NPN NPN NPN T018 T018 T018 T018 T018 45 45 45 20 20 0.1 0.1

Contextual Info: TO-18 Metal-Can Package Transistors NPN Electrical Characteristics (Ta=25'C, Unless Otherwise Specified) Maximum Ratings Type No. Pd (W) 0Tc=25°c ^C8Q (V) Min ^GEO ^EBO (V) Min (V) Min 2N915 70 50 5 0.36 2N916 45 25 5 0.36 2N929 45 45 5 0.5 ^CM *C80 ^C B

bc238

Contextual Info: SbE 3> • ^70570 0DG7DM7 3 3 1 ■ Z E T B SEMICONDUCTOR DICE zetex semiconductors NPN SM ALL SIGNAL TRA N SISTO R S V CBO V CE0 hFE at •CBO Dice type Min. Min. Max. at V CB Volts Volts BC 546A BC546B ZTX304 BCY65EA BC182 BC 107A BC107B BC237 BC 547A BC547B

BC108A

Abstract: bc109
Contextual Info: BC107 to 109 _ A .F. SILICON PLANAR EPITAXIAL TRANSISTORS General purpose NPN transistors in TO-18 metal packages w ith the collector connected to the case. PNP com plem ents are BC177, BC178 and BC179. QUICK REFERENCE D ATA Collector-emitter voltage VgE = 0

BC238

Abstract: BCY59A ZTX304 ZTX302 BC107A BC107B BC182 BC237 BC546A BC546B
Contextual Info: SEMICONDUCTOR DICE NPN SMALL SIGNAL TRANSISTORS V CBO V CEO IcBO Min. Min. Max. at V CB Volts Volts BC 546A BC546B Z TX304 BC Y65EA BC182 BC 107A BC107B BC237 BC 547A BC547B BC550B BC550C B C Y59A BC Y59B BCY59C BCY59D 2N930 Z TX303 BC183 BC184 ZTX302 ZTX301

BC106B

Abstract: BCI07A bc177 TO-92 BCI07B
Contextual Info: DEVICE TYPE PACKAGE BVCEO BVCBO BVEBO C BO 9 VCB |V> M IN |V| MIN VI MIN |mAI M A X |V> HFE @ VC & 1C MIN -M A X (V |mA] COB FT (pi) MAX |MHl| NF Idbl MAX BC10> BCI07A BCI07B BC108 BC108A NPN NPN NPN NPN NPN TO-18 TO -18 TO -18 TO -18 TO-18 45 45 45 20 20

2sc711

Abstract: 2SC871 2SC374 2SC2001L PA6013B 2SC631 2SC1684 R TBC338 LOW-POWER SILICON NPN PET4003
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 704 V BR CEO hFE V} V(BR)CEO 5 Manufacturer HSE415 2SC870 2SC538 2SC539 A5T3391 A5T3391A A8T3391 A8T3391A MPS3391A MPS3391A 1 2SC368 BSY90 BSY90 TBC338A 2N3391

2N4007

Abstract: BC140 equivalent 2N4007 equivalent TRANSISTOR pnp BC140 TRANSISTOR BC140 BC141 equivalent 2N3060 BC179C TRANSISTOR BC109b bc108b equivalent
Contextual Info: SPRAGUE Metal-Encased Silicon S E P T R Transistors HIGH-VOLTAGE VIDEO OUTPUT TRANSISTOR >- Type No. os < Pd T* = 25 C s V BR Ic B O CEO V o lts EBO V o lts iiA lc Watts CBO V olts Max. (m A) 1.0 300 250 7 ' Lim ts Con dition s V <BR) NPN 2N3440 D-C C U R R E N T G A I N ( h FE)

BC109 pin configuration

Abstract: BC109C pin configuration bc109 transistor BC109 BC109C BC109C datasheet DATASHEET Transistor BC109 BC109c transistor datasheet BC109B 30Hz
Contextual Info: BC109 Series Low Power Bipolar Transistors Feature: • NPN Silicon Planar Epitaxial Transistors. TO-18 Metal Can Package Dimensions Minimum Maximum A 5.24 5.84 B 4.52 4.97 C 4.31 5.33 D 0.40 0.53 E - 0.76 F - 1.27 G - 2.97 H 0.91 1.17 J 0.71 1.21 K 12.70

bcv59

Abstract: N705 bcv-59 ZTX301
Contextual Info: ’ ZETEX SEMICONDUCTORS IbE D • =1170570 000b675 0 ■ ZETB ' SEM IC O N D U C T O R DICE ELECTRICAL C H A RA C TERIST ICS NPN SM A LL SIGNAL TRA N SISTO R S Dice type- BC546A BC546B ZT X304 BCY65EA BC182 BC107A BC107B BC237 BC547A BC547B BC550B BC550C

bc238

Abstract: ZTX304 ZTX108 BC107P BC182P BC212P BC546P BC547P BC556P BC557P
Contextual Info: TABLE 1: NPN GENERAL PURPOSE The d e vice s s h o w n in this table are general p urpose tra n sisto rs d esigned for sm all signal am plification from d.c. to radio frequencies. Typical application areas include: A U D IO F R E Q U E N C Y A M P L IF IE R S , D R IV E R S and O U T P U T S T A G E S , O S C IL L A T O R S , A N D G E N E R A L

BC107 pin configuration

Abstract: BC109 pin configuration BC109 BC109C pin configuration BC108 BC107 pin BC108 pin configuration bc107a pin out DATASHEET Transistor BC109 BC107
Contextual Info: BC107/ BC108/ BC109 Low Power Bipolar Transistors TO-18 Features: NPN Silicon Planar Epitaxial Transistors. Suitable for applications requiring low noise and good hFE linearity, eg. audio pre-amplifiers, and instrumentation. TO-18 Metal Can Package Dimension

2n3019 equivalent

Abstract: 2N3053 equivalent BC140 equivalent BC141 equivalent 2n930 equivalent bcy59 equivalent BC107 equivalent transistors 2N328A BC109C NPN bcy31
Contextual Info: Discrete Devices Transistors Cont. General Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N2897 NPN 2N2898 NPN NPN 2N2899 2N2900 2N3019 2N3020 2 N 3036 2N3053 NPN NPN NPN NPN NPN VCB Volts VCE