BAR81 Search Results
BAR81 Datasheets (16)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| BAR81 | Infineon Technologies | RF switching diode for use in shunt configuration | Original | 22.82KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BAR81 | Kexin | Silicon RF Switching Diode | Original | 31.86KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BAR81 | Siemens | Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) | Original | 47.65KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BAR81 | Siemens | RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide | Original | 465.63KB | 37 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BAR81 | TY Semiconductor | Silicon RF Switching Diode - SOT-143 | Original | 57.82KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BAR81W | Infineon Technologies | RF switching diode for use in shunt configuration | Original | 42.24KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BAR81W | Infineon Technologies | DIODE SWITCHING 30V 0.1A 4SOT343 | Original | 417.16KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BAR81W | Infineon Technologies | Antenna Switch; Package: PG-SOT343-4; IF (max): 100.0 mA; CT (max): 1.0 pF; rF (typ): 0.7 Ohm; Trr (typ): 80.0 ns; Configuration: Single; | Original | 72.5KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BAR81W | Kexin | Silicon RF Switching Diode | Original | 33.76KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BAR81W | Siemens | Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) | Original | 34.27KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BAR81W | Siemens | RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide | Original | 465.63KB | 37 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BAR81W | TY Semiconductor | Silicon RF Switching Diode - SOT-343 | Original | 59.7KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BAR81WE6327 | Infineon Technologies | RF Diodes, Discrete Semiconductor Products, DIODE RF SGL 30V 100MA SOT-343 | Original | 6 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BAR81WE6327BTSA1 | Infineon Technologies | Discrete Semiconductor Products - Diodes - RF - DIODE RF SGL 30V 100MA SOT-343 | Original | 819.43KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BAR81WH6327 | Infineon Technologies | RF Diodes, Discrete Semiconductor Products, DIODE RF SW 30V 100MA SOT343 | Original | 6 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BAR81WH6327XTSA1 | Infineon Technologies | Discrete Semiconductor Products - Diodes - RF - DIODE RF SW 30V 100MA SOT343 | Original | 819.43KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAR81 Price and Stock
Infineon Technologies AG BAR81WH6327XTSA1Diode PIN Switch 30V 100mA 4-Pin SOT-343 T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BAR81WH6327XTSA1 | 6,868 | 1,273 |
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| BAR81WH6327XTSA1 | 4,785 | 6 |
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| BAR81WH6327XTSA1 | 355 | 31 |
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BAR81WH6327XTSA1 | Tape & Reel | 6,000 |
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BAR81WH6327XTSA1 | Cut Strips | 4,785 | 26 Weeks | 1 |
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| BAR81WH6327XTSA1 | 355 | 1 |
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BAR81WH6327XTSA1 | 7,000 | 1 |
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BAR81WH6327XTSA1 | 935 | 1 |
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Tripp Lite IBAR8-15RM- Bulk (Alt: IBAR8-15RM) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IBAR8-15RM | Bulk | 1 |
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IBAR8-15RM |
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KELLER PA-21Y/25BAR/81554.33/4-20MAPressure Sensor, -40 To 100°C, 25 Bar; |Keller PA-21Y/25BAR/81554.33/4-20MA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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PA-21Y/25BAR/81554.33/4-20MA | Bulk | 21 | 1 |
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KELLER PA-21Y / 100BAR / 81684.33 / 0Pressure Tx, Absolute, 0 To 100Bar; |Keller PA-21Y / 100BAR / 81684.33 / 0 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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PA-21Y / 100BAR / 81684.33 / 0 | Bulk | 10 | 1 |
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Tripp Lite IBAR8-15RM (IB8RM)SURGE PROTECTOR, 8 OUT, 12FT, RA PLUG, 3840 JOULES, REMOTE MASTER, ISOBAR SERIES |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IBAR8-15RM (IB8RM) | Bulk | 5 Weeks | 1 |
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BAR81 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: BAR81. Silicon RF Switching Diode Designed for use in shunt configuration in high performance RF switches High shunt signal isolation Low shunt insertion loss Optimized for short - open transformation using lines BAR81W 4 3 1 2 Type BAR81W Package |
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bar81bar81wot343 | |
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Contextual Info: Product specification BAR81W SOT-343 Unit: mm Features Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss Absolute Maxim um Ratings Ta = 25 Param eter Sym bol Value Unit VR 30 V IF 100 mA P tot 100 mW Diode reverse voltage |
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bar81wot-343 | |
BAR81WContextual Info: BAR81W Silicon RF Switching Diode 3 Design for use in shunt configuration 4 High shunt signal isolation Low shunt insertion loss 2 1 Type Marking BAR81W BBs Pin Configuration 1=A 2=C 3=A VPS05605 Package 4=C SOT343 Maximum Ratings Parameter Symbol Diode reverse voltage |
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bar81wvps05605ot343app10+2 | |
marking bbsContextual Info: BAR81. Silicon RF Switching Diode • Designed for use in shunt configuration in high performance RF switches • High shunt signal isolation • Low shunt insertion loss • Optimized for short - open transformation using λ/4 lines • Pb-free RoHS compliant package |
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bar81bar81wot343marking bbs | |
bbs 2002
Abstract: BAR81 BAR81W marking 015
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bar81bar81wot343dec-20-2002+2 | |
BAR81
Abstract: BAR81W BGA420
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bar81bar81wot343bga420 | |
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Contextual Info: BAR81. Silicon RF Switching Diode Designed for use in shunt configuration in high performance RF switches High shunt signal isolation Low shunt insertion loss Optimized for short - open transformation using lines BAR81W 4 3 1 2 Type BAR81W Package |
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bar81bar81wot343 | |
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Contextual Info: BAR81. Silicon RF Switching Diode • Designed for use in shunt configuration in high performance RF switches • High shunt signal isolation • Low shunt insertion loss • Optimized for short - open transformation using λ/4 lines BAR81W " ! Type BAR81W |
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bar81bar81wot343 | |
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Contextual Info: BAR81. Silicon RF Switching Diode • Designed for use in shunt configuration in high performance RF switches • High shunt signal isolation • Low shunt insertion loss • Optimized for short - open transformation using λ/4 lines BAR81W " ! Type BAR81W |
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bar81bar81wot34315mponents | |
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Contextual Info: Product specification BAR81 Unit: mm Features Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss A bsolute M axim um R atings T a = 25 S ym bol V alue U nit D iode revers e voltage P aram eter VR 30 V F orw ard c urrent |
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bar81 | |
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Contextual Info: Diodes SMD Type Silicon RF Switching Diodes BAR81 Unit: mm Features Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss A bsolute M axim um R atings T a = 25 S ym bol V alue U nit D iode revers e voltage P aram eter VR |
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bar81 | |
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Contextual Info: BAR81. Silicon RF Switching Diode • Designed for use in shunt configuration in high performance RF switches • High shunt signal isolation • Low shunt insertion loss • Optimized for short - open transformation using λ/4 lines • Pb-free RoHS compliant package |
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bar81bar81wot343 | |
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Contextual Info: BAR81. Silicon RF Switching Diode • Designed for use in shunt configuration in high performance RF switches • High shunt signal isolation • Low shunt insertion loss • Optimized for short - open transformation using λ/4 lines BAR81W " ! Type BAR81W |
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bar81bar81wot343 | |
marking BBs
Abstract: BAR81 VSO05553
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bar81vso05553aug-21-2001marking bbs | |
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dcf77
Abstract: BAR988HG-T barometer MSF-60 BAR933HG DCF-77 BAR816HG barometer sensor BAR826 BAR916
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bar816hgbar933hgbar988hg-tbar989hg-t+7 | |
harmonic 4000 hl
Abstract: BAR65-03W Lambda diode harmonic HL 4000 AN013 BAR65 BAR80 BAR81 microstripline
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04-dec-96\schaffer\proj96\gsmsw01\gsmharmonic 4000 hl+8 | |
smd code book
Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
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od-80od123/323ot-23ot346+16 | |
schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
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p462-ndp463-ndlng295lfcp2ulng395mftp5u+11 | |
irfb4115
Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
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element-14f155-6af155-10af165-15a+11 | |
FR4 substrate antenna
Abstract: BAR63-02W BAR63 BAR81W SCD80 siemens diodes DECT siemens 140FF
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scd80ot343bar63bar81w+7 | |
XM0830SJ
Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
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24ghzbf517bf770abf771+16 | |
MMBD2104
Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
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bas32bas45bav105ll4148+15 | |
MMBD2103
Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
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bzv49bzv55500mwbas32+16 | |
SMD Codes
Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
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bzv49bzv55500mwbas32+16 | |