BAR80
Abstract: VSO05553
Contextual Info: BAR80 Silicon RF Switching Diode 3 Design for use in shunt configuration 4 High shunt signal isolation Low shunt insertion loss 2 1 VSO05553 Type Marking BAR80 AAs Pin Configuration 1=C 2=A 3=C Package 4=A MW-4 Maximum Ratings Parameter Symbol Diode reverse voltage
|
Original
|
bar80vso05553aug-17-2001100mhz+2ehd07010ehd07009
|
PDF
|
VSO05553
Abstract: marking BAr
Contextual Info: BAR 81 Silicon RF Switching Diodes 3 • Design for use in shunt configuration 4 • High shunt signal isolation • Low shunt insertion loss 2 1 VSO05553 Type Marking BAR 81 BBs Pin Configuration 1=C 2=A 3=C Package 4=A MW-4 Maximum Ratings Parameter Symbol
|
Original
|
vso05553oct-05-1999marking bar |
PDF
|
VSO05553
Contextual Info: BAR 80 Silicon RF Switching Diode 3 • Design for use in shunt configuration 4 • High shunt signal isolation • Low shunt insertion loss 2 1 VSO05553 Type Marking BAR 80 AAs Pin Configuration 1=C 2=A 3=C Package 4=A MW-4 Maximum Ratings Parameter Symbol
|
Original
|
vso05553oct-05-1999100mhzehd07010+1ehd07009
|
PDF
|
marking BBs
Abstract: BAR81 VSO05553
Contextual Info: BAR81 Silicon RF Switching Diodes 3 Design for use in shunt configuration 4 High shunt signal isolation Low shunt insertion loss 2 1 VSO05553 Type Marking BAR81 BBs Pin Configuration 1=C 2=A 3=C Package 4=A MW-4 Maximum Ratings Parameter Symbol Diode reverse voltage
|
Original
|
bar81vso05553aug-21-2001marking bbs |
PDF
|