B3FCI7254 Search Results

BD806

Abstract: TRANSISTOR C 557 B B0806 TRANSISTOR bd 147 BD808 b0808 ADC 808 adc 809 T557 221A-04
Contextual Info: M OT OR OL A SC X S TR S /R 1EE D I F b3fci7254 QDâM7ti3 b | MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC HIGH POWER SILICON PNP TRANSISTOR . . . designed for use in high power audio amplifiers complementary or quasi complementary circuits. utilizing 10 AMPERE

MJ340

Abstract: EM- 546 motor MJ3042
Contextual Info: MOTORCLA SC 12E D I b3fci7254 QG0MC17,1 7 | XSTRS/R F r-33^ 9 MOTOROLA SEMICONDUCTOR TECHNICAL DATA DARUNGTON 10 AMPERES POWER TRANSISTORS NPN SILICON HIGH VOLTAGE SILICON POWER DARUNGTONS . . . developed for line operated amplifier, series pass and switching

mrf2001

Abstract: RF2005 MRF2005
Contextual Info: lEE D I b3fci7254 ÜOflñOEO 2 | MO TOR OLA SC T - XSTRS/R F MOTOROLA SEM ICO NDUCTOR MRF2001 MRF2001B TECHNICAL DATA The RF Line 1.0 W NPN SILICON MICROWAVE POWER TRANSISTORS 2 GHz MICROWAVE POWER TRANSISTORS NPN S IL IC O N , . . designed fo r Class B and C am p lifie r o r oscillator applications

J03037

Abstract: motorola rf Power Transistor RF POWER TRANSISTOR NPN J0303
Contextual Info: MOTOROLA SC XSTRS/R F 4bE b3fci7254 D O O 'm ns T-3 1 •flOTb 3 -1 3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA J03037 The RF Line NPN Silicon UHF Power Transistor 3 7 W — 512 M H z RF PO W ER T R A N S IS T O R N P N S IL IC O N . . . des ig n e d p rim a rily fo r 12.5 V o lt w id e b a n d , larg e-sig n al a m p lifie r ap p licatio n s in

wf vqe 24 d

Abstract: 2N5898 2N5989 225AB 25CC 2N5991 MBD5300 TO-225AB mbd-5300 Transistor J3T 3 pin
Contextual Info: MOTOROLA SC XSTRS/R F 12Ë D | b3L?254 OG 0MS?b ? | ^33 NPN MOTOROLA SEMICONDUCTOR 2N5989 2N5991 TECHNICAL DATA 12 AM PERE POWER PLASTIC COM PLEM ENTARY SILICON POWER TRANSISTORS POWER TRANSISTORS COM PLEM ENTARY SILICON * '* .J .J. . designed fo r use In g eneral-purpose am p lifier and sw itching

vk200 rf choke

Abstract: vk200 MRF156 VK200 r.f choke arco 469 340G-02 choke vk200 MOSFET J220 MRF156120 Arco 469 ceramic capacitor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF156 MRF156R The RF MOSFET Line RF Power Field-E ffect Transistors Motorola Preferred Device N-Channel Enhancement Mode MOSFETs Designed for broadband industrial/commercial applications up to 120 MHz.

1RFZ40

Abstract: 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50
Contextual Info: MOTOROLA SC X S T R S /R IME D | F b3b?2S4 Q O fl' iB n 1 | J l 9 / - 6 0 Selection by Package The product listed in Tables t through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained

mtd10n05e

Abstract: CASE369A
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MTD10N05E Designer's Data Sheet Motorola Preferred Device TM OS IV Power Field Effect Transistor TM O S POWER FETs 10 AMPERES RDS on = 0.1 O H M 50 VOLTS N-Channel Enhancement-Mode DPAK fo r Surface Mount This advanced "E " series of TMOS power MOSFETs is

BCX70GL

Abstract: BCX70HL BCX70JL BCX70KL MPS3904
Contextual Info: MOT OROL A SC XSTRS/R F 1SE 0 I b3t,7aS4 OGflSiQB 1 | MAXIMUM RATINGS S ym bol Value U n it C o lle ctor-E m itter Voltage R ating VCEO 45 Vdc Collector-Base Voltage VCBO 45 Vdc Em itter-Base Voltage Vebo 5.0 Vdc ic 200 m A dc S ym bol M ax U n it PD 225 mW

Contextual Info: b 3 b ? 2 5 4 G l O l b l G Sbb « M O T b O rder th is data sheet by MUN5211T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor TVansistor NPN Silicon Surface Mount Transistor With M onolithic Bias Resistor N etw ork M UN5211T1 M UN5212T1 M UN5213T1

mgb20n40cl

Abstract: MGB20N40 MTB50P03HDL motorola automotive transistor coil ignition
Contextual Info: D2PAK DEVICES continued TMOS Power MOSFETs — N-Channel V(BR)DSS R DS(on) (Volts) Min (Ohms) Max @ Id Id PD<1> (Amps) (cont) Amps (Watts) Max Device 50 0.0095 37.5 MTB75N0SHD 30 0.007 37.5 MTB75N03HDLW 75 75 (') Tc - 25°C I2) Indicates Logic level (3) power rating when mounted on an FR-4 glass epoxy printed circuit board with the minimum pad

je240

Abstract: MJE241 MJE263 mje240 JE250 MJE244 mje260 mje250 mje252 mjE26
Contextual Info: MOT OR CL A SC ÎEE D I b3b?254 QGÖS315 b | X S T RS /R F NPN MOTOROLA SEMICONDUCTOR T -3Î-07 T-33-17 TECHNICAL DATA M1E240, MJE241 MJE243, MJE244 PNP MJE250 thru MIE254 COMPLEMENTARY SILICON POWER PLASTIC TRANSISTORS 4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON

8N35

Abstract: 72SM AN569 MTH8N35 MTH8N40 MTM8N35 MTM8N40 TMOS 8IM40 MTH8
Contextual Info: MOTOROLA SC IM E D I XST R S/R F t.3b?aS4 OOfiTötiM 4 | MOTOROLA m SEMICONDUCTOR TECHNICAL DATA MTH8INI35 MTH8N40 MTM8N35 MTM8N40 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TM OS Th ese TM O S Pow er FE T s are designed for high voltage, high

BC 177 transistor

Abstract: TRANSISTOR BC 384 MJ16110 transistor a013 MJH16110 AM603 AM503 MJ16010 MUR870 P6302
Contextual Info: MOTOROLA SC I X STRS/R F 1 EE 0 I MOTOROLA b3L7E5M D0flSLb4 ^ I T - 3 3 -1 3 Order this data sheet by MJ16110/D SEMICONDUCTOR TECHNICAL DATA M J16110 MJH16110 Designer's Data Sheet IMPN Silico n Pow er Transistors Switchmode III Bridge Series POWER TRANSISTORS

motorola 2198

Contextual Info: I MOT OR OL A SC XSTRS/R F 4bE D b3b?2SH □G'mSEG 7 «110Tb MOTOROLA • SEMICONDUCTOR T- 33-05 TECHNICAL DATA The RF Line NPN Silicon High Frequency Transistor 1C = 200 mA HIGH FREQUENCY TRAN SISTO R NPN SILICON . . d e sign e d for ultra-linear co m m u n ic a tio n s o r instrum entation applications. L o w n oise

BUZ-10L

Abstract: mtp23n BUZ10L
Contextual Info: MOTOROLA SC X STRS/R F 2bE D b3b72SM OGICHDG 1 O rder this d ata sheet by B U Z 10U D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUZ10L M TP23N 05L Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate These T M O S Power FETs are designed for high speed,

N493

Abstract: basf 100cjd
Contextual Info: MOTORCLA SC XSTRS/R F 12E D | b3fc,72SM O G ä M m M T | T- 33-/3 MOTOROLA BUX47 BUX47A SEMICONDUCTOR TECHNICAL DATA 9 AM PERES SWITCHMODE llA SERIES NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS 400 AND 450 V O LT S BVCEO 160 WATTS 850 * 1000 V (BVCEX)

MJE520

Abstract: bd189 sc 6038 MJE12007 MOTOROLA 527 33A mj4647 mje13006 BD 433NPNTO-126 Je105 mps-u
Contextual Info: MOTORCLA SC XSTRS/R F 12E D | t3t?5SM aüâ4m ? T | T -9 1 -0 1 Selection By Package Motorola power transistors are available in a wide variety of metal and plastic packages to match thermal, electrical and cost requirements. The following table com pares the basic

Contextual Info: MOTOROLA SC ÍXSTRS/R F> HbE D Order this data sheet by MTH6N100E/D b3b72S4 QÜ'lQ'nb 4 MOTOROLA • i SEMICONDUCTOR S TECHNICAL DATA ■ MTH6N100E Designer's Data Sheet TMOS E-FET High Energy Power FET N-Channel Enhancem ent-Mode Silico n Gate T M O S P O W E R FET