B34 DATASHEET Search Results

MBRS340

Abstract: on smc b34 B0 B34
Contextual Info: MBRS340 MBRS340 Features • Compact surface mount with J-bend leads SMC • 3.0 Watt Power Dissipation package • 3.0 Ampere, forward voltage less than 500 mV SMC (D0-214AB) Color Band Denote Cathode Top Mark: B34 3.0 Schottky Power Rectifier Absolute Maximum Ratings*

MBRS340

Contextual Info: MBRS340 MBRS340 Features • Compact surface mount with J-bend leads SMC • 3.0 Watt Power Dissipation package • 3.0 Ampere, forward voltage less than 500 mV SMC (D0-214AB) Color Band Denote Cathode Mark: B34 Schottky Rectifier Absolute Maximum Ratings*

FAIRCHILD MBRS340

Abstract: MBRS340
Contextual Info: MBRS340 MBRS340 Features • Compact surface mount with J-bend leads SMC • 3.0 Watt Power Dissipation package • 3.0 Ampere, forward voltage less than 500 mV SMC (D0-214AB) Color Band Denote Cathode Mark: B34 Schottky Rectifier Absolute Maximum Ratings*

b34 marking

Abstract: Mark B34 FAIRCHILD MBRS340 MBRS340
Contextual Info: MBRS340 MBRS340 Features • Compact surface mount with J-bend leads SMC • 3.0 Watt Power Dissipation package • 3.0 Ampere, forward voltage less than 500 mV SMC (D0-214AB) Color Band Denote Cathode Mark: B34 Schottky Rectifier Absolute Maximum Ratings*

ON B34

Abstract: MBRS340 b34 surface mount diode b34 B34 on 001 B34 b34 datasheet FAIRCHILD MBRS340 CBVK741B019 F63TNR
Contextual Info: MBRS340 MBRS340 Features • Compact surface mount with J-bend leads SMC • 3.0 Watt Power Dissipation package • 3.0 Ampere, forward voltage less than 500 mV SMC (D0-214AB) Color Band Denote Cathode Top Mark: B34 3.0 Schottky Power Rectifier Absolute Maximum Ratings*

smd rgb led PLCC4

Abstract: VLMRGB343-ST-UV-RS
Contextual Info: VLMRG B34 3. Se r ie s FEATURES • Black surface • AEC-Q101 automotive qualified • Qualified according to JEDEC moisture sensitivity level 2 • Compatible with IR reflow soldering • Environmentally friendly; RoHS-compliant • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

MBRS340

Abstract: 3M Philippines 616 3g diode b34 CBVK741B019 F63TNR F924 T0012 do214ab packaging reels date code
Contextual Info: S3A-S3M S3A - S3M Features • Low profile package. • Glass passivated junction. SMC/DO-214AB COLOR BAND DENOTES CATHODE 3.0 Ampere General Purpose Rectifiers Absolute Maximum Ratings* Symbol IF AV TA = 25°C unless otherwise noted Parameter Value Units

b34 surface mount

Abstract: MBRS340 diode b34 CBVK741B019 F63TNR F924 MBRS320 T0012 ON B34 AA SMC
Contextual Info: MBRS320 MBRS320 Features • Compact surface mount with J-bend leads SMC • 3.0 Watt Power Dissipation package • 3.0 Ampere, forward voltage less than 500 mV SMC (D0-214AB) Color Band Denotes Cathode Top Mark: B32 3.0 Schottky Power Rectifier Absolute Maximum Ratings*

FAIRCHILD MBRS340

Abstract: MBRS340 diode b34 CBVK741B019 F63TNR F924 T0012 ON B34 strain smart
Contextual Info: ES3A - ES3D ES3A - ES3D Features • For surface mount applications. • Glass passivated junction. • Low profile package. • Easy pick and place. • Built-in strain relief. • SMC/DO-214AB COLOR BAND DENOTES CATHODE Superfast recovery times for high efficiency.

ON B34

Abstract: b34 diode FAIRCHILD MBRS340 diode b34 diode schottky B34 b34. device data on semiconductor DO-214AB SS32-S310 MBRS340 diode 019 b34
Contextual Info: SS32-S310 SS32 - S310 Features • Metal to silicon rectifiers, majority carrier conduction. • Low forward voltage drop. • Easy pick and place. • High surge current capability. SMC/DO-214AB COLOR BAND DENOTES CATHODE 3.0 Ampere Schottky Barrier Rectifiers

marking code B34

Abstract: DO-214AB b34 FAIRCHILD MBRS340 gdv 64 a
Contextual Info: SMCJ5.0 C A - SMCJ170(C)A SMCJ5.0(C)A - SMCJ170(C)A Features • • • • • • • Glass passivated junction. 1500 W Peak Pulse Power capability on 10/1000 µs waveform. Excellent clamping capability. Low incremental surge resistance. Fast response time; typically less

BFM SMC

Abstract: b34 marking smc bem 129 gez FAIRCHILD GHM marking code B34 MBRS340
Contextual Info: SMCJ5.0 C A - SMCJ170(C)A SMCJ5.0(C)A - SMCJ170(C)A Features • • • • • • Glass passivated junction. 1500 W Peak Pulse Power capability on 10/1000 µs waveform. Excellent clamping capability. Low incremental surge resistance. Fast response time; typically less

gfx do-214ab

Abstract: FAIRCHILD MBRS340 equivalent of BFT 51 b34 diode Diode 133 B34 diode GFP AA diode smc bfk marking code B34 gex smc SMCJ11
Contextual Info: SMCJ5.0 C A - SMCJ170(C)A SMCJ5.0(C)A - SMCJ170(C)A Features • • • • • • • Glass passivated junction. 1500 W Peak Pulse Power capability on 10/1000 µs waveform. Excellent clamping capability. Low incremental surge resistance. Fast response time; typically less

XS1-L2

Abstract: L1128 XS1-L02A-QF124-C5 XS1-L02A-QF124-C4 XS1-L02A-QF124-I5 marking p1j XS1 XMOS xcore IC MARKING A60 xla0
Contextual Info: XS1-L2 124QFN Datasheet Version 1.5 Publication Date: 2010/06/16 Copyright 2010 XMOS Ltd. All Rights Reserved. XS1-L2 124QFN Datasheet 1.5 Description XMOS Link XS1-L2 I/O PLL Switch XCore1 Switch JTAG I/O JTAG XMOS Link XCore 8KBytes OTP 64KBytes SRAM

Contextual Info: MS18R3266AH0 Revision History Version 0.1 November 2003 - Preliminary - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Module Datasheet. Version 1.0 (May 2004) - Eliminate "Preliminary" Page 0 Rev. 1.0 May 2004 MS18R3266AH0 (32Mx18)*6pcs SO-RIMM™ based on 576Mb A-die, 32s banks,32K/32ms Refresh, 2.5V

MARKING CODE B82

Abstract: a87 marking Marking b66 marking a86 MARKING B83 marking a75
Contextual Info: MR18R162WAG0 Change History Version 1.0 January 2002 * First copy. * Based on the 1.0 ver. 288Mbit RIMM Module Datasheet Version 1.1 (July 2002) * Based on the 1.0 ver.(January 2002) 288Mbit A-die 32d RIMM Module Datasheet * eliminate "Target" etc. Page 0

A74 marking

Abstract: a80 marking code MS18R3266AH0-CT9 a74 marking code diode code B74 marking A32 marking code B38
Contextual Info: MS18R3266AH0 Preliminary Revision History Version 0.1 November 2003 - Preliminary - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Module Datasheet. Page 0 Rev. 0.1 Nov. 2003 MS18R3266AH0 Preliminary (32Mx18)*6pcs SO-RIMM™ based on 576Mb A-die, 32s banks,32K/32ms Refresh, 2.5V

b41 Marking

Contextual Info: MR18R162WEG0 Change History Version 0.1 January 2004 * First copy. * Based on the 1.0 ver.(July 2002) 288Mbit D-die 32d RIMM Module Datasheet Version 1.0 (May 2004) * Eliminate "Preliminary" Page 0 Version 1.0 May 2004 MR18R162WEG0 (16Mx18)*32pcs RIMM Module based on 288Mb E-die, 32s banks,16K/32ms Ref, 2.5V

A76 MARKING CODE

Abstract: a77 package marking a80 marking code marking A32 marking A45 marking code B38 MR18R162WEG0-CM8 MARKING B17 MARKING CODE B82 marking a86
Contextual Info: Preliminary MR18R162WEG0 Change History Version 0.1 January 2004 * First copy. * Based on the 1.0 ver.(July 2002) 288Mbit D-die 32d RIMM Module Datasheet Page 0 Version 0.1 Jan. 2004 Preliminary MR18R162WEG0 (16Mx18)*32pcs RIMM Module based on 288Mb E-die, 32s banks,16K/32ms Ref, 2.5V

transistor marking A21

Abstract: a74 marking code b82 400 B83 004 marking B44 MARKING CODE b48
Contextual Info: MR18R162WAG0 Change History Version 1.0 January 2002 * First copy. * Based on the 1.0 ver. 288Mbit RDRAMs RIMM Datasheet Version 1.1 (July 2002) * Based on the 1.0 ver.(January 2002) 288Mbit A-die 32d RIMM Datasheet * eliminate "Target" etc. Page 0 Version 1.1 July. 2002

a80 marking code

Abstract: MR18R162WDG0-CM8 B83 004 marking code B38 MR18R162WDG0 MR18R162WDG0-CK8 marking A70 marking code b84
Contextual Info: MR18R162WDG0 Change History Version 1.0 July 2002 * First copy. * Based on the 1.1 ver.(July 2002) 288Mbit A-die 32d RIMM Module Datasheet Page 0 Version 1.0 July. 2002 MR18R162WDG0 (16Mx18)*32pcs RIMM Module based on 288Mb D-die, 32s banks,16K/32ms Ref, 2.5V

a74 marking code

Abstract: MARKING B82 MARKING B83 a80 marking code B11 marking code Device marking code B12 B13 B14 B15 B16 marking A45 a64 marking code A79 marking code a86 diode
Contextual Info: MR18R162WDG0 Change History Version 1.0 July 2002 * First copy. * Based on the 1.1 ver.(July 2002) 288Mbit A-die 32d RIMM Datasheet Page 0 Version 1.0 July. 2002 MR18R162WDG0 (16Mx18)*32pcs RIMMTM Module based on 288Mb D-die, 32s banks,16K/32ms Ref, 2.5V

a80 marking code

Abstract: marking A32 marking A86 marking code B38 samsung electronics logo
Contextual Info: MR16R0828ER T 0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.0ver. 128Mb D-die Consumer RIMM Module Datasheet. Page 0 Version 1.0 July 2002 MR16R0828ER(T)0 (8Mx16)*8pcs Consumer RIMM Module based on 128Mb E-die, 32s banks,16K/32ms Ref, 2.5V

Contextual Info: SMUUUUUFU0U01 November 30, 2000 Revision History • November 30, 2000 Modified supply current profile specifications on page 8. • October 19, 2000 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel: 510 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com