B2834 Search Results

P819

Abstract: P1026 p2532-01 P397 12x101 P394A
Contextual Info: HAMAMATSU CORP 11E D m 4 2 2 TbCH 0002720 =1 Ml PbS Photoconductive Cells Characteristics Type No. Out­ line No. /P.28 \ I 29/ Package Window Material Effective Sensitive Area Size Effective Sensitive Area Measure­ ment Temp. mm (mm2) IR Cutoff Wave­

B1720-02

Abstract: B1720-05 B1920-01 B2144-01 B1720 1x10-11 B1919-01 B2144 B1720-04 B1918
Contextual Info: HA MA M A T S U CORP D • 4ESTbOT 0QQ271S T ■ Ge Photodiodes: Uncooled Types Type No. Out­ line No. /P.28\ \ 29/ Package Window Material B1720-04 O 3 pin TO-18 B B1720-02 3 pin TO-18 B B1720-05 3 pin TO-18 B2144 B1918 O B1918-01 B1919 B1919-01 B1920-01

B834 Y

Abstract: T B834 B834 B2834 33P33
Contextual Info: Ge Avalanche Photodiodes Spectral Response 0.8 to 1.7 ¡1 m Highly Sensitive Photodiodes with Internal Gain Mechanism G e av alan ch e p h o to d io d es A P D d e te c t an d am p lify low level light by m ean s o f av alan ch e effects that take place w hen a rev erse bias is

B5170

Abstract: P4115 Thermistor IR Detector Ir detector pin details b2538 ps138 B1920-01 B2144
Contextual Info: Dimensional Outlines Unit: mm O B1720-02, etc. B1720-05 B2144-01, etc. 1 102 _ I #81±01 WINDOW I t* *•; *5 9 ± 0 I ' I I E SENSITIVE SURFACE ( ' fcj „ ! 1 KIROA0024EA O B1919-01 B1920-01 B3188 *1 3 8 + 02 *1 2 4 + 0 2 ir k ,« KIRDA0026EA PIN No

B5170

Abstract: B5170-05 G3476-01 G3476-10 P2682-01 B 1403 N P3226-02 B5170-02 G5125-10 P903
Contextual Info: Applications of Infrared Detectors I n frared rad iatio n is u tilized in a w i d e ra n g e o f te c h n ic a l a n d sc ien tif ic fields, i n clu din g in d u str y , ag r i c u l t u re , m e d i c i n e , a s t r o n o m y , c o m m u n i c a t i o n s a n d r e m o t e s e n s i n g f ro m

P873-G35-552

Abstract: p1760-04 P873-13
Contextual Info: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel­ oped a variety of opto-electronic semiconductor de­ vices. These competitively priced high quality products are designed to meet the requirements of general and

B1919-01

Abstract: B1920-01 hamamatsu PIN TO5
Contextual Info: HA MA M A T S U CORP D • 4ESTbOT 0QQ271S T ■ Ge Photodiodes: Uncooled Types Characteristics O Type No. Out­ line No. /P.28\ \ 29/ Package Window Material B1720-04 O 3 pin TO-18 B B1720-02 3 pin TO-18 B B1720-05 3 pin TO-18 B2144 B1918 O B1918-01 B1919

Contextual Info: Ge Avalanche Photodiodes Spectral Response 0.8 to 1.7 fj. m Highly Sensitive Photodiodes with Internal Gain Mechanism Ge avalanche photodiodes APD detect and amplify low level light by means of avalanche effects that take place when a reverse bias is applied.

6X101

Abstract: P839-08 K1713-03 B1920-01 P819 P2837-01 ir P838 P838 thermistor inas detector inas
Contextual Info: H A MA MAT S U CORP n E D • 425^bQT 000272b T ■ 'AV InAs, InSb Detectors Characteristics F0v=60° ( /P.28\ 29) Effective Sensitive Area Measure­ ment Temp. (mm) fC) IR Cutoff Wave­ length Ac fam) Min. Typ. 3 .2 3 .6 5X108 1X109 3.1 3 .2 3X109 5X109

Thermistor IR Detector

Abstract: B1920-01
Contextual Info: HAMAMATSU CORP l^ E D • 4 5 S ci t , Q I:] □ □ □ S T lL i 7 ■ High-Speed Ge Photodiodes Characteristics Type No. Out­ line Package No. Window Material P.28 Effective Sensitive Area Size Effective Sensitive Area (mm) (mm2) IR Cutoff Wave­ length

B2538-05

Abstract: B-3179 P3226
Contextual Info: HAMAMATSU CORP ITE D • 4 2 2 'ïb a 'ï 00G2714 3 Ge Photodiodes: Cooled Types Type No. Out­ line No. /P.28\ \ 29/ 6 Package 9 Window Material Characteristics Effective Sensitive A rea S ize Effective Sensitive Area mm (mm2) Measure­ ment Temp. Co) Peak

P791-01

Abstract: P791-02 p903 P3207 P791 P791-03 G708 hamamatsu PIN TO5
Contextual Info: HAMAMATSU CORP 1=1E D • 422^ 30^ 0G02722 2 PbSe Photoconductive Ceils Characteristics Type No. Out­ line No. P.24 25 Package Window Material Effective Sensitive Area ' Size Effective Sensitive Area Measure­ ment Temp. (mm (mm2) fC ) Peak Respon­ sivity

P903

Abstract: 4X103 P2051 p819 B1920-01
Contextual Info: HAMAMATSU CORP 1=1E D • 422^ 30^ 0 G 0 2 7 2 2 2 PbSe Photoconductive Ceils Characteristics Type No. Out­ line No. P.24 25 Package Window Material Effective Sensitive Area ' Size Effective Sensitive Area Measure­ ment Temp. (mm (mm2) IR Cutoff Wave­