P2748 Search Results

Contextual Info: MCT photoconductive detectors P2748/P5274 series Dewar type detector with high sensitivity and high-speed response in long wavelength range Features Applications Choice of spectral response range up to 25 m The band gap can be adjusted by controlling the composition

Dewar

Contextual Info: MCT photoconductive detectors P2748/P5274 series Dewar type detector with high sensitivity and high-speed response in long wavelength range Features Applications Choice of spectral response range up to 25 m The band gap can be adjusted by controlling the composition

P3257

Abstract: A3515 C5185 P2748-40 P2748-41 P2748-42 P3257-50 P5274 P5274-01 P7752-10
Contextual Info: INFRARED DETECTOR MCT光導電素子 P2748/P5274シリーズ, P3257-50 長波長域で高感度高速応答を実現したデュワ型検出素子 特長 用途 l さまざまな感度波長範囲 ~25 µm l FTIR l 分光光度計 l サーマルイメージング

high range METAL detector circuit

Abstract: METAL DETECTOR CIRCUIT
Contextual Info: INFRARED DETECTOR MCT photoconductive detector P2748/P5274 series, P3257-50 Dewar type detector with high sensitivity and high-speed response in long wavelength range Features Applications l Choice of spectral response range up to 25 µm The band gap can be adjusted by controlling the composition

Contextual Info: MCT photoconductive detectors P2748/P5274 series Dewar type detector with high sensitivity and high-speed response in long wavelength range Features Applications Choice of spectral response range up to 25 m The band gap can be adjusted by controlling the composition

Contextual Info: INFRARED DETECTOR MCT photoconductive detector P2748/P5274 series, P3257-50 Dewar type detector with high sensitivity and high-speed response in long wavelength range Features Applications l Choice of spectral response range up to 25 µm The band gap can be adjusted by controlling the composition

high range METAL detector circuit

Abstract: C5185 Dewar cdte infrared detector A3515 C3871 P2748-40 P2748-41 P2748-42
Contextual Info: INFRARED DETECTOR MCT photoconductive detector P2748/P5274 series, P3257-50 Dewar type detector with high sensitivity and high-speed response in long wavelength range Features Applications l Choice of spectral response range up to 25 µm The band gap can be adjusted by controlling the composition

Contextual Info: INFRARED DETECTOR MCT photoconductive detector P2748/P5274 series, P3257-50 Dewar type detector with high sensitivity and high-speed response in long wavelength range Features Applications l Choice of spectral response range up to 25 µm The band gap can be adjusted by controlling the composition

Contextual Info: MCT photoconductive detectors P2748/P5274 series Dewar type detector with high sensitivity and high-speed response in long wavelength range Features Applications Choice of spectral response range up to 25 m The band gap can be adjusted by controlling the composition

Contextual Info: MCT photoconductive detectors P2748/P5274 series Dewar type detector with high sensitivity and high-speed response in long wavelength range Features Applications Choice of spectral response range up to 25 m The band gap can be adjusted by controlling the composition

P5274-01

Contextual Info: MCT photoconductive detectors P2748/P5274 series Dewar type detector with high sensitivity and high-speed response in long wavelength range Features Applications Choice of spectral response range up to 25 m The band gap can be adjusted by controlling the composition

high range METAL detector circuit

Contextual Info: INFRARED DETECTOR MCT photoconductive detector P2748/P5274 series, P3257-50 Dewar type detector with high sensitivity and high-speed response in long wavelength range Features Applications l Choice of spectral response range up to 25 µm The band gap can be adjusted by controlling the composition

Contextual Info: MCT光導電素子 P2748/P5274シリーズ 長波長域で高感度高速応答を実現したデュワ型 検出素子 特長 用途 さまざまな感度波長範囲 ～25 m HgTeとCdTeの組成比によってバンドギャップが変わります。

C5185

Abstract: photoconductive MCT dewar Metal Detector A3515 P2748-40 P2748-41 P2748-42 P3257-50 P5274
Contextual Info: INFRARED DETECTOR MCT photoconductive detector P2748/P5274 series, P3257-50 Dewar type detector with high sensitivity and high-speed response in long wavelength range Features Applications l Choice of spectral response range up to 25 µm The band gap can be adjusted by controlling the composition

P819

Abstract: P1026 p2532-01 P397 12x101 P394A
Contextual Info: HAMAMATSU CORP 11E D m 4 2 2 TbCH 0002720 =1 Ml PbS Photoconductive Cells Characteristics Type No. Out­ line No. /P.28 \ I 29/ Package Window Material Effective Sensitive Area Size Effective Sensitive Area Measure­ ment Temp. mm (mm2) IR Cutoff Wave­

B1720-02

Abstract: B1720-05 B1920-01 B2144-01 B1720 1x10-11 B1919-01 B2144 B1720-04 B1918
Contextual Info: HA MA M A T S U CORP D • 4ESTbOT 0QQ271S T ■ Ge Photodiodes: Uncooled Types Type No. Out­ line No. /P.28\ \ 29/ Package Window Material B1720-04 O 3 pin TO-18 B B1720-02 3 pin TO-18 B B1720-05 3 pin TO-18 B2144 B1918 O B1918-01 B1919 B1919-01 B1920-01

P873-G35-552

Abstract: p1760-04 P873-13
Contextual Info: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel­ oped a variety of opto-electronic semiconductor de­ vices. These competitively priced high quality products are designed to meet the requirements of general and

Contextual Info: プリアンプ付赤外検出モジュール C12495-411V 取り扱いが容易な高感度モジュール 直流電源を接続するだけで赤外線の検出を行うことができるプリアンプ内蔵のデュワ型MCTモジュール 液体窒素で冷却

Contextual Info: 化合物光半導体 受光素子 1 InGaAs/GaAs PINフォトダイオード 1-1 1-2 特性 使い方 2 InGaAs APD 2-1 2-2 2-3 動作原理 特性 使い方 第 章 6 8 MCT HgCdTe 光起電力素子 8-1 8-2 特性 使い方 9 複合素子 10 オプション

B1919-01

Abstract: B1920-01 hamamatsu PIN TO5
Contextual Info: HA MA M A T S U CORP D • 4ESTbOT 0QQ271S T ■ Ge Photodiodes: Uncooled Types Characteristics O Type No. Out­ line No. /P.28\ \ 29/ Package Window Material B1720-04 O 3 pin TO-18 B B1720-02 3 pin TO-18 B B1720-05 3 pin TO-18 B2144 B1918 O B1918-01 B1919

mct 12

Abstract: Dewar
Contextual Info: Infrared detector modules with preamp Metal dewar type High sensitivity modules of easy-to-use These devices combine a dewar type detector with a compatible preamplifier, and easily operate to detect infrared radiation just by connecting to a DC power supply. InGaAs, InSb and MCT HgCdTe detectors are provided as standard devices (liquid nitrogen cooling). Custom-designed devices with different active areas, FOV or amplifier gain, etc. are also available to meet your specific needs.

6X101

Abstract: P839-08 K1713-03 B1920-01 P819 P2837-01 ir P838 P838 thermistor inas detector inas
Contextual Info: H A MA MAT S U CORP n E D • 425^bQT 000272b T ■ 'AV InAs, InSb Detectors Characteristics F0v=60° ( /P.28\ 29) Effective Sensitive Area Measure­ ment Temp. (mm) fC) IR Cutoff Wave­ length Ac fam) Min. Typ. 3 .2 3 .6 5X108 1X109 3.1 3 .2 3X109 5X109

Selection guide

Abstract: United Detector Technology PSD
Contextual Info: Selection guide - September 2013 Opto-semiconductor Modules Related products and circuits that enable semiconductor elements to operate at peak performance. A broad range of customization is available. HAMAMATSU PHOTONICS K.K. Opto-semiconductor Modules Related products and circuits that enable

Contextual Info: セレクションガイド 2014.12 赤外線検出素子 赤 外 域 の さま ざ ま な 感 度 波 長 範 囲 に 対 応 INFRARED DETECTOR 赤外線検出素子 赤外線検出素子は計測・分析・工業・通信・農業・医 学・理 化 学・天 文 学・宇 宙 などの 分 野に幅 広く利 用