B2144 Search Results

B1720-02

Abstract: B1720-05 B1920-01 B2144-01 B1720 1x10-11 B1919-01 B2144 B1720-04 B1918
Contextual Info: HA MA M A T S U CORP D • 4ESTbOT 0QQ271S T ■ Ge Photodiodes: Uncooled Types Type No. Out­ line No. /P.28\ \ 29/ Package Window Material B1720-04 O 3 pin TO-18 B B1720-02 3 pin TO-18 B B1720-05 3 pin TO-18 B2144 B1918 O B1918-01 B1919 B1919-01 B1920-01

B5170

Abstract: P4115 Thermistor IR Detector Ir detector pin details b2538 ps138 B1920-01 B2144
Contextual Info: Dimensional Outlines Unit: mm O B1720-02, etc. B1720-05 B2144-01, etc. 1 102 _ I #81±01 WINDOW I t* *•; *5 9 ± 0 I ' I I E SENSITIVE SURFACE ( ' fcj „ ! 1 KIROA0024EA O B1919-01 B1920-01 B3188 *1 3 8 + 02 *1 2 4 + 0 2 ir k ,« KIRDA0026EA PIN No

B1919-01

Abstract: B1920-01 hamamatsu PIN TO5
Contextual Info: HA MA M A T S U CORP D • 4ESTbOT 0QQ271S T ■ Ge Photodiodes: Uncooled Types Characteristics O Type No. Out­ line No. /P.28\ \ 29/ Package Window Material B1720-04 O 3 pin TO-18 B B1720-02 3 pin TO-18 B B1720-05 3 pin TO-18 B2144 B1918 O B1918-01 B1919

Contextual Info: Ge Photodiodes Non-cooled Types NIR (Near Infrared) detectors for stable operation at room temperature • High stability over extended time periods Ge photodiodes are planar type photovoltaic devices that provide stable responsivity over extended time periods.

Contextual Info: Infrared Detectors with Built-in Preamplifiers Dewar Types Easy-to-use, high performance de­ vices with the ultimate in responsivity These devices combine a dewar type detector with a matched pream­ plifier into a metal case. Simply by connecting to a DC power supply,

G5832

Contextual Info: Spectral Response 0.7 to 1.7 |iim • Spectral Response • Dark Current vs. Reverse Voltage • Terminal Capacitance vs. Reverse Voltage Typ.Ta=25’C.1=1MHz 0.6 0.8 1.0 1.2 1.4 1.6 1.8 WAVELENGTH (/im ) 2.0 1 0 -' The cut-off wavelengths of the TE-cooled de­

Contextual Info: Ge Photodiodes Cooled Types Achieves higher S/N ratio by cooling • Optimized for low level infrared photometry • Lower temperature detection limit: Approx. 200 °C By cooling Ge photodiodes, the dark current can be reduced effec­ tively and the S/N ratio improved.

P4488

Abstract: G5832-05 G5832-11 KI80 pbse B1920-01 a7050
Contextual Info: Pyroelectric Detectors Ideally suited for human body sensing and simplified analytical instruments Broad spectral response Operates at room temperature Low cost Thermally-Compensated Types Single Element Including a thermal compensation element in the same package, these

P819

Abstract: P1026 p2532-01 P397 12x101 P394A
Contextual Info: HAMAMATSU CORP 11E D m 4 2 2 TbCH 0002720 =1 Ml PbS Photoconductive Cells Characteristics Type No. Out­ line No. /P.28 \ I 29/ Package Window Material Effective Sensitive Area Size Effective Sensitive Area Measure­ ment Temp. mm (mm2) IR Cutoff Wave­

b1415

Abstract: N5244A MARKING W63
Contextual Info: Agilent N5244A and N5245A 2-Port and 4-Port PNA-X Microwave Network Analyzers 10 MHz - 43.5 GHz (10 MHz - 50 GHz) Service Guide Agilent Technologies Notices Agilent Technologies, Inc. 2010 - 2013 Manual Part Number No part of this manual may be reproduced

P4488

Abstract: P4488-02 G5832-02 C4159 b617 G3476 a7050 P394 series G5832-05 P3782-12
Contextual Info: Pyroelectric Detectors Ideally suited for human body sensing and simplified analytical instruments Broad spectral response Operates at room temperature Low cost Thermally-Compensated Types Single Element Including a thermal compensation element in the same package, these

JV 3pin

Abstract: B1920-01
Contextual Info: Ge Photodiodes Noncooled Types NIR (Near Infrared) Detectors for Stable Operation at Room Temperature High Stability Over Extended Time Periods G e photodiodes are planar type photovoltaic devices that provide stable responsivity over extended time periods.

P873-G35-552

Abstract: p1760-04 P873-13
Contextual Info: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel­ oped a variety of opto-electronic semiconductor de­ vices. These competitively priced high quality products are designed to meet the requirements of general and

B1920-01

Contextual Info: Ge Photodiodes Non-cooled Types Spectral Response Range: 0.8 to 1.8 |im NIR (Near Infrared) detectors for stable operation at room temperature •High stability over extended tim e periods Ge photo d io d es are planar type photovoltaic devices th a t provide

Infrared photodiode preamplifier

Contextual Info: Two-color Detectors Broad spectral response range from UV through infrared • Broad spectral response range Two-color detectors cover a broad spectral response range, and are effectively used in such applications as flame monitors, spectro­ photometers and film thickness gauges.

P3226

Abstract: P5168 P3226-02 G5832-05 P2682-01 P394 series Photodiode 2PIN TYPES G3476-01 G5832-02 P3258-02
Contextual Info: PbS Photoconductive Detectors Easy-to-use photoconductive detec­ tors with high responsivity over 3 jim • Operates at room temperature Since PbS cells operate stably at room temperature, they are used in a wide range of applications such as radiation thermometers and flame

6X101

Abstract: P839-08 K1713-03 B1920-01 P819 P2837-01 ir P838 P838 thermistor inas detector inas
Contextual Info: H A MA MAT S U CORP n E D • 425^bQT 000272b T ■ 'AV InAs, InSb Detectors Characteristics F0v=60° ( /P.28\ 29) Effective Sensitive Area Measure­ ment Temp. (mm) fC) IR Cutoff Wave­ length Ac fam) Min. Typ. 3 .2 3 .6 5X108 1X109 3.1 3 .2 3X109 5X109

ATXP1

Abstract: G3476-01 B2538 P2613 B2538-05
Contextual Info: HAMAMATSU CORP n E ». L MSHTbOT OOOE^? T • IJStiBB^äM^SäSlBr Pyroelectric Infrared Detectors Type No. Effective Window Spectral Sensitive Material Response 1Hz 10Hz Area Noise M NEP 500,1,1 D* (500,1,1) (mm) (wm) (WW) (V/W) (nV/Hz’/*) (W/Hz'/a) (cmHz’-^/W)

thermistor inas

Abstract: INSB PHOTODIODE 101 thermistor InSb spectral response insb detector preamplifier c4159
Contextual Info: InAs, InSb Photovoltaic Detectors Photovoltaic detectors with high­ speed response and low noise • Long cooling hold time: 8 hours A large capacity glass dewar cooled by liquid nitrogen is used for standard detector package. It allows for 8-hour continuous cooling.

verilog code for fifo

Abstract: pci verilog code verilog code for 100mbps ethernet
Contextual Info: DIGITAL Semiconductor 21440 Multiport 10/100Mbps Ethernet Controller Verilog Model Kit Read Me First Order Number: EC–R5N2B–TE March 1998 This document provides information on the DIGITAL Semiconductor 21440 Multiport 10/100Mbps Ethernet Controller Verilog Model Kit in a Verilog-XL

278162

Abstract: verilog code verilog code for fifo fifo design in verilog
Contextual Info: 21440 Multiport 10/100 Mb/s Ethernet Controller Verilog Model Kit Application Note November 1998 Order Number: 278162-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual

pr 8501 b

Abstract: P394A P3226-02 P3226 PBS P394 series
Contextual Info: PbS Photoconductive Detectors Easy-to-use photoconductive detec­ tors with high responsivity over 3 jim • Operates at room temperature Since PbS cells operate stably at room temperature, they are used in a wide range of applications such as radiation thermometers and flame

P4115

Abstract: B1919 G5832-11
Contextual Info: PbSe Photoconductive Detectors Capable of detecting to 5 fim range TE-cooled types • High-speed response • Operates at room temperature Compared to other types of detectors used in the same wavelength range, PbSe cells have higher response speed and can also operate at

Thermistor IR Detector

Abstract: B1920-01
Contextual Info: HAMAMATSU CORP l^ E D • 4 5 S ci t , Q I:] □ □ □ S T lL i 7 ■ High-Speed Ge Photodiodes Characteristics Type No. Out­ line Package No. Window Material P.28 Effective Sensitive Area Size Effective Sensitive Area (mm) (mm2) IR Cutoff Wave­ length