B2538 Search Results

Contextual Info: Ge Photodiodes Cooled Types Achieves higher S/N ratio by cooling • Optimized for low level infrared photometry • Lower temperature detection limit: Approx. 200 °C By cooling Ge photodiodes, the dark current can be reduced effec­ tively and the S/N ratio improved.

P819

Abstract: P1026 p2532-01 P397 12x101 P394A
Contextual Info: HAMAMATSU CORP 11E D m 4 2 2 TbCH 0002720 =1 Ml PbS Photoconductive Cells Characteristics Type No. Out­ line No. /P.28 \ I 29/ Package Window Material Effective Sensitive Area Size Effective Sensitive Area Measure­ ment Temp. mm (mm2) IR Cutoff Wave­

B1720-02

Abstract: B1720-05 B1920-01 B2144-01 B1720 1x10-11 B1919-01 B2144 B1720-04 B1918
Contextual Info: HA MA M A T S U CORP D • 4ESTbOT 0QQ271S T ■ Ge Photodiodes: Uncooled Types Type No. Out­ line No. /P.28\ \ 29/ Package Window Material B1720-04 O 3 pin TO-18 B B1720-02 3 pin TO-18 B B1720-05 3 pin TO-18 B2144 B1918 O B1918-01 B1919 B1919-01 B1920-01

B2538-05

Abstract: B6175-05
Contextual Info: Ge Photodiodes Cooled Types Spectral Response Range: 0.8 to 1.8 urn Achieving higher S/N by cooling T h e c h a rcte ristics of dark cu rrent and S / N can be im proved effectiviely by cooling Ge photodiodes. When cooled, it should be noted that the spectral response of Ge pho­

B2538-05

Abstract: B6175-05
Contextual Info: Ge Photodiodes Cooled Types Achieves higher S/N ratio by cooling • Optimized for low level infrared photometry • Lower tem perature detection limit: Approx. 200 °C By coo lin g G e photo d io d es, the dark c u rre n t can be reduced e ffe c ­ tively and the S/N ratio im proved.

Contextual Info: Ge Photodiodes Cooled Types Achieves Higher S/N Ratio by Cooling By cooling G e photodiodes, the dark current can be reduced effec­ tively and the S/N ratio improved. W hen cooling, it should be noted that the spectral response o f Ge photodiodes shifts slightly to the short wavelength side.

B5170

Abstract: P4115 Thermistor IR Detector Ir detector pin details b2538 ps138 B1920-01 B2144
Contextual Info: Dimensional Outlines Unit: mm O B1720-02, etc. B1720-05 B2144-01, etc. 1 102 _ I #81±01 WINDOW I t* *•; *5 9 ± 0 I ' I I E SENSITIVE SURFACE ( ' fcj „ ! 1 KIROA0024EA O B1919-01 B1920-01 B3188 *1 3 8 + 02 *1 2 4 + 0 2 ir k ,« KIRDA0026EA PIN No

P873-G35-552

Abstract: p1760-04 P873-13
Contextual Info: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel­ oped a variety of opto-electronic semiconductor de­ vices. These competitively priced high quality products are designed to meet the requirements of general and

B1919-01

Abstract: B1920-01 hamamatsu PIN TO5
Contextual Info: HA MA M A T S U CORP D • 4ESTbOT 0QQ271S T ■ Ge Photodiodes: Uncooled Types Characteristics O Type No. Out­ line No. /P.28\ \ 29/ Package Window Material B1720-04 O 3 pin TO-18 B B1720-02 3 pin TO-18 B B1720-05 3 pin TO-18 B2144 B1918 O B1918-01 B1919

B5170-02

Contextual Info: Ge Photodiodes Cooled Types Achieves Higher S/N Ratio by Cooling By cooling Ge photodiodes, the dark current can be reduced effec­ tively and the S/N ratio improved. W hen cooling, it should be noted that the spectral response o f Ge photodiodes shifts slightly to the short wavelength region.

6X101

Abstract: P839-08 K1713-03 B1920-01 P819 P2837-01 ir P838 P838 thermistor inas detector inas
Contextual Info: H A MA MAT S U CORP n E D • 425^bQT 000272b T ■ 'AV InAs, InSb Detectors Characteristics F0v=60° ( /P.28\ 29) Effective Sensitive Area Measure­ ment Temp. (mm) fC) IR Cutoff Wave­ length Ac fam) Min. Typ. 3 .2 3 .6 5X108 1X109 3.1 3 .2 3X109 5X109

ATXP1

Abstract: G3476-01 B2538 P2613 B2538-05
Contextual Info: HAMAMATSU CORP n E ». L MSHTbOT OOOE^? T • IJStiBB^äM^SäSlBr Pyroelectric Infrared Detectors Type No. Effective Window Spectral Sensitive Material Response 1Hz 10Hz Area Noise M NEP 500,1,1 D* (500,1,1) (mm) (wm) (WW) (V/W) (nV/Hz’/*) (W/Hz'/a) (cmHz’-^/W)

Thermistor IR Detector

Abstract: B1920-01
Contextual Info: HAMAMATSU CORP l^ E D • 4 5 S ci t , Q I:] □ □ □ S T lL i 7 ■ High-Speed Ge Photodiodes Characteristics Type No. Out­ line Package No. Window Material P.28 Effective Sensitive Area Size Effective Sensitive Area (mm) (mm2) IR Cutoff Wave­ length

B2538-05

Abstract: B-3179 P3226
Contextual Info: HAMAMATSU CORP ITE D • 4 2 2 'ïb a 'ï 00G2714 3 Ge Photodiodes: Cooled Types Type No. Out­ line No. /P.28\ \ 29/ 6 Package 9 Window Material Characteristics Effective Sensitive A rea S ize Effective Sensitive Area mm (mm2) Measure­ ment Temp. Co) Peak

P791-01

Abstract: P791-02 p903 P3207 P791 P791-03 G708 hamamatsu PIN TO5
Contextual Info: HAMAMATSU CORP 1=1E D • 422^ 30^ 0G02722 2 PbSe Photoconductive Ceils Characteristics Type No. Out­ line No. P.24 25 Package Window Material Effective Sensitive Area ' Size Effective Sensitive Area Measure­ ment Temp. (mm (mm2) fC ) Peak Respon­ sivity

P903

Abstract: 4X103 P2051 p819 B1920-01
Contextual Info: HAMAMATSU CORP 1=1E D • 422^ 30^ 0 G 0 2 7 2 2 2 PbSe Photoconductive Ceils Characteristics Type No. Out­ line No. P.24 25 Package Window Material Effective Sensitive Area ' Size Effective Sensitive Area Measure­ ment Temp. (mm (mm2) IR Cutoff Wave­