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    P397 Search Results

    P397 Result Highlights (5)

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    LP3972SQ-5810/NOPB
    Texas Instruments Power Management IC (PMIC) for Advanced Application Processors 40-WQFN Visit Texas Instruments
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    Texas Instruments Power Management IC (PMIC) for Advanced Application Processors 40-WQFN -40 to 125 Visit Texas Instruments Buy
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    Texas Instruments Power Management IC (PMIC) for Advanced Application Processors 40-WQFN Visit Texas Instruments Buy
    LP3971SQ-N510/NOPB
    Texas Instruments Power Management IC (PMIC) for Advanced Application Processors 40-WQFN Visit Texas Instruments
    LP3972SQ-I514/NOPB
    Texas Instruments Power Management IC (PMIC) for Advanced Application Processors 40-WQFN -40 to 125 Visit Texas Instruments Buy

    P397 Datasheets (1)

    Hamamatsu
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    P397
    Hamamatsu PbS Photoconductive Detectors Scan PDF 634.16KB 6
    SF Impression Pixel

    P397 Price and Stock

    Amphenol Corporation

    Amphenol Corporation PT00A-16-26P(397)

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    Amphenol Corporation PT00A-22-21P(397)

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    Amphenol Corporation PT00CP-18-11P(397)

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    Amphenol Corporation PT00E-10-6P(397)

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    Amphenol Corporation PT00SP-16-26P(397)

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    P397 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    P281 B01

    Abstract: G187
    Contextual Info: LogiCORE IP Processing System 7 v4.02a DS871 October 16, 2012 Product Specification Introduction LogiCORE IP Facts Table The Processing System 7 IP is the software interface around the Zynq Processing System. The Zynq -7000 family consists of an system-on-chip (SoC) style


    Original
    ds871zynq-7000p281 b01g187 PDF

    Contextual Info: User’s Manual The sales of these products are limited for China, Hong Kong, and India. R7F0C008A/B/F, R7F0C009A/B/F 16 User’s Manual: Hardware 16-Bit Single-Chip Microcontrollers All information contained in these materials, including products and product specifications,


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    r7f0c008a/b/fr7f0c009a/b/f16-bitr01uh0399ej0200 PDF

    P819

    Abstract: P1026 p2532-01 P397 12x101 P394A
    Contextual Info: HAMAMATSU CORP 11E D m 4 2 2 TbCH 0002720 =1 Ml PbS Photoconductive Cells Characteristics Type No. Out­ line No. /P.28 \ I 29/ Package Window Material Effective Sensitive Area Size Effective Sensitive Area Measure­ ment Temp. mm (mm2) IR Cutoff Wave­


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    p394ap3258p394rp3226+95x1043x1051x1053x104p819p1026p2532-01p39712x101 PDF

    B1720-02

    Abstract: B1720-05 B1920-01 B2144-01 B1720 1x10-11 B1919-01 B2144 B1720-04 B1918
    Contextual Info: HA MA M A T S U CORP D • 4ESTbOT 0QQ271S T ■ Ge Photodiodes: Uncooled Types Type No. Out­ line No. /P.28\ \ 29/ Package Window Material B1720-04 O 3 pin TO-18 B B1720-02 3 pin TO-18 B B1720-05 3 pin TO-18 B2144 B1918 O B1918-01 B1919 B1919-01 B1920-01


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    422uch2856kb1720-04b1720-02+10b1720-05b2144b2144-01b1918b1918cb2614-01b1920-01b17201x10-11b1919-01 PDF

    P132-P134

    Abstract: p331 TRANSISTOR P452
    Contextual Info: MSX Family Data Sheet Features • SRAM-based, in-system programmable • Configurable I/O Ports – Individually programmable as input, output, bi-directional, or Bus Repeater mode – Control Signals per I/O port: 2 input enables, 2 output enables, 2 Global Clock inputs and Next Neighbor


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    p132-p134p331 transistorp452 PDF

    aw7 TRANSISTOR

    Abstract: P449 I-CUBE iq P-033 Bus repeater p426 P-238 P122-P120 p331 TRANSISTOR P339
    Contextual Info: MSX Family Data Sheet Features • SRAM-based, in-system programmable • Configurable I/O Ports – Individually programmable as input, output, bi-directional, or Bus Repeater mode – Control Signals per I/O port: 2 input enables, 2 output enables, 2 Global Clock inputs and Next Neighbor


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    aw7 transistorp449i-cube iqp-033+6bus repeaterp426p-238p122-p120p331 transistorp339 PDF

    B5170

    Abstract: P4115 Thermistor IR Detector Ir detector pin details b2538 ps138 B1920-01 B2144
    Contextual Info: Dimensional Outlines Unit: mm O B1720-02, etc. B1720-05 B2144-01, etc. 1 102 _ I #81±01 WINDOW I t* *•; *5 9 ± 0 I ' I I E SENSITIVE SURFACE ( ' fcj „ ! 1 KIROA0024EA O B1919-01 B1920-01 B3188 *1 3 8 + 02 *1 2 4 + 0 2 ir k ,« KIRDA0026EA PIN No


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    b1720-02b1720-05b2144-01kiroa0024ea+13b1919-01b1920-01b3188kirda0026eakirda0027ebkirda0028ebb5170p4115thermistor ir detectorir detector pin detailsb2538ps138b2144 PDF

    B5170

    Abstract: B5170-05 G3476-01 G3476-10 P2682-01 B 1403 N P3226-02 B5170-02 G5125-10 P903
    Contextual Info: Applications of Infrared Detectors I n frared rad iatio n is u tilized in a w i d e ra n g e o f te c h n ic a l a n d sc ien tif ic fields, i n clu din g in d u str y , ag r i c u l t u re , m e d i c i n e , a s t r o n o m y , c o m m u n i c a t i o n s a n d r e m o t e s e n s i n g f ro m


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    b1710-02b1918-01b1720-05g5125-10+14p394ap3258-02p3982p2750p5138b5170b5170-05g3476-01g3476-10p2682-01b 1403 np3226-02b5170-02p903 PDF

    P521 G

    Abstract: P452 p477 p520 p508 p364 p372 p421 data sheet P439 IR P116
    Contextual Info: MSX532 Matrix Switch Preliminary Data Sheet Features • SRAM-based, in-system programmable • 532 Configurable I/O Ports – Individually programmable as input, output, bi-directional, or Bus Repeater mode – Control Signals per I/O port: 2 input enables, 2 output


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    msx532mkt-msx532-dsp521 gp452+8p477p520p508p364p372p421 data sheetp439ir p116 PDF

    B1919-01

    Abstract: B1920-01 hamamatsu PIN TO5
    Contextual Info: HA MA M A T S U CORP D • 4ESTbOT 0QQ271S T ■ Ge Photodiodes: Uncooled Types Characteristics O Type No. Out­ line No. /P.28\ \ 29/ Package Window Material B1720-04 O 3 pin TO-18 B B1720-02 3 pin TO-18 B B1720-05 3 pin TO-18 B2144 B1918 O B1918-01 B1919


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    0qq271sb1720-04b1720-02b1720-05+8b2144b2144-01b1918b1918-01b1919b1919-01b1920-01hamamatsu pin to5 PDF

    TF800BB14-061

    Abstract: P1999 8051 microwave oven ec 9410 cf K 2676 9343-11R1 TF800BA14-061 2320-1SL 9816SL 9410-3SL-1
    Contextual Info: < ] ^  _dZkijho$@e^Wdied^Wibed]X[[dh[Ye]d_p[ZWiW $ J^[jhWZ_j_edYedj_dk[i°


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    jk-943l9343-11r19343-12r19343-13r1+139343-14r19343-16r19343-18r1jk-943htf800bb14-061p19998051 microwave ovenec 9410 cfk 2676tf800ba14-0612320-1sl9816sl9410-3sl-1 PDF

    Contextual Info: PbS Photoconductive Cells Easy-to-Use Photoconductive Detectors with High Responsivity Over 3 ¡i m PbS cells make use of the photoconductive effect by which the elec­ trical resistance decreases with application of infrared radiation Operates at Room Tem perature


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    kirdb004beakirdb0049eakirdb0050ea PDF

    transistor P479

    Abstract: P521 FAIRCHILD P124 FAIRCHILD p491 p331 TRANSISTOR p372 p525 AU38 p268 "Fairchild Semiconductor" fairchild aa35
    Contextual Info: Revised April 2003 MSX532 532 Port Digital Crosspoint Switch with LVTTL I/O’s General Description Features The MSX family of SRAM-based bit-oriented switching devices offer flow-through NRZ data rates of up to 150Mb/s and registered clock frequencies of up to 75MHz. The I/O


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    msx532150mb/s75mhztransistor p479+9p521 fairchildp124 fairchildp491p331 transistorp372p525au38p268 "fairchild semiconductorfairchild aa35 PDF

    r72v17

    Abstract: hs 7461 S1R72V17B00B S1R72V17B05Q 63936-1 S1R72 usb/usb/str 7656
    Contextual Info: S1R72V17*Q Technical Manual Rev.1.5 NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any liability of any kind arising out of any


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    s1r72v17acco1295-750-216/r72v17hs 7461+5s1r72v17b00bs1r72v17b05q63936-1s1r72usb/usb/str 7656 PDF

    Glass Thermometers

    Abstract: 15V temperature controller peltier peltier effect element 9x104
    Contextual Info: PbS Photoconductive Cells Easy-to-Use Photoconductive Detectors with High Responsivity Over 3 jjl m PbS cells make use of the photoconductive effect by which the elec­ trical resistance decreases with application o f infrared radiation Operates at Room Temperature


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    kirdb0048eakirdb0049eakihdb0050eaglass thermometers+315v temperature controller peltierpeltier effect element9x104 PDF

    6X101

    Abstract: P839-08 K1713-03 B1920-01 P819 P2837-01 ir P838 P838 thermistor inas detector inas
    Contextual Info: H A MA MAT S U CORP n E D • 425^bQT 000272b T ■ 'AV InAs, InSb Detectors Characteristics F0v=60° ( /P.28\ 29) Effective Sensitive Area Measure­ ment Temp. (mm) fC) IR Cutoff Wave­ length Ac fam) Min. Typ. 3 .2 3 .6 5X108 1X109 3.1 3 .2 3X109 5X109


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    000272bp2837-015x1081x109+152x10104x1023x1096x1095x109k1713-016x101p839-08k1713-03b1920-01p819ir p838p838thermistor inasdetector inas PDF

    transistor P397

    Abstract: P521 G P089 P521 FAIRCHILD transistor P479 MSX532 MSX532TB792 P039 UP501 P449
    Contextual Info: Revised June 2002 MSX532 532 Port Digital Crosspoint Switch with LVTTL I/O’s General Description Features The MSX family of SRAM-based bit-oriented switching devices offer flow-through NRZ data rates of up to 150Mb/s and registered clock frequencies of up to 75MHz. The I/O


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    msx532150mb/s75mhztransistor p397+8p521 gp089p521 fairchildtransistor p479msx532tb792p039up501p449 PDF

    J29 P190

    Abstract: p331 TRANSISTOR p477 p525 P364 P521 G P440 C 05 P521 G2 p372 transistor P519
    Contextual Info: MSX Family Data Sheet Features • SRAM-based, in-system programmable • Configurable I/O Ports – Individually programmable as input, output, bi-directional, or Bus Repeater mode – Control Signals per I/O port: 2 input enables, 2 output enables, 2 Global Clock inputs and Next Neighbor


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    j29 p190p331 transistorp477p525+6p364p521 gp440 c 05p521 g2p372transistor p519 PDF

    P521 FAIRCHILD

    Abstract: J29 P190 P211A11 fairchild AG12 diode fairchild Ah7 FAIRCHILD AB29 transistor P421 fairchild AJ23 P449 P315 transistor
    Contextual Info: MSX Family Datasheet Features • SRAM-based, in-system programmable • Configurable I/O Ports – Individually programmable as input, output, bi-directional, or Bus Repeater mode – Control Signals per I/O port: 2 input enables, 2 output enables, 2 Global Clock inputs and Next Neighbor


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    p521 fairchildj29 p190p211a11fairchild ag12 diode+6fairchild ah7fairchild ab29transistor p421fairchild aj23p449p315 transistor PDF

    G5832-21

    Abstract: 4801B G5832-11 G3476-01 B1920-01
    Contextual Info: Dimensional Outlines Unit: mm i G5832-02, -03 O G3476-01, etc. WINDOW f 3.0+0 1 G5832-05, etc. f 5 4+0.2 f 5.410.2 f 13 9+0.2 f 4 7 t0 1 <p 4.710.1 ÿ 12.3510.1 f W IN D O W I < M 0.5t01 *4 § ! i WHDA0002EB Q G5832-21, etc. O G5832-11, etc. 4 15.3=0.2 WINDOW


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    g3476-01g5832-02g5832-05whda0002eb+8g5832-11g5832-21kirda0031ebg6890-128b1720-02g66904801bb1920-01 PDF

    pr 8501 b

    Abstract: P394A P3226-02 P3226 PBS P394 series
    Contextual Info: PbS Photoconductive Detectors Easy-to-use photoconductive detec­ tors with high responsivity over 3 jim • Operates at room temperature Since PbS cells operate stably at room temperature, they are used in a wide range of applications such as radiation thermometers and flame


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    ki80a0055ea0g0470p394ap3226-02+9p791-11p3207-04p4115k1713-01k3413-01p3981-01pr 8501 bp3226 pbsp394 series PDF

    Contextual Info: PbS Photoconductive Detectors Easy-to-use photoconductive detec­ tors with high responsivity over 3 um • Operates at room temperature Since PbS cells operate stably at room tem perature, they are used in a w ide range o f applications such as radiation therm om eters and flam e


    OCR Scan
    kirdb0048eakirdb0049eakirdb0050eakirdc0005ea PDF

    Thermistor IR Detector

    Abstract: B1920-01
    Contextual Info: HAMAMATSU CORP l^ E D • 4 5 S ci t , Q I:] □ □ □ S T lL i 7 ■ High-Speed Ge Photodiodes Characteristics Type No. Out­ line Package No. Window Material P.28 Effective Sensitive Area Size Effective Sensitive Area (mm) (mm2) IR Cutoff Wave­ length


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    b2297-02b2297-03b2297-042856k+8k1713-01k1713-02k1713-03p1026p2750p2748thermistor ir detectorb1920-01 PDF

    P5168

    Contextual Info: PbS Photoconductive Cells Easy-to-Use Photoconductive Detectors with High Responsivity Over 3 ¡u m PbS cells make use of the photoconductive effect by which the elec­ trical resistance decreases with application o f infrared radiation Operates at Room Temperature


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    kirdb0048eap5168 PDF