P1026 Search Results

ka-band transistor

Abstract: P1026-BD 30SPA0553 DM6030HK TS3332LD XP1026-BD XP1026-BD-000V XP1026-BD-EV1 ka-band bare
Contextual Info: 27.0-32.0 GHz GaAs MMIC Power Amplifier P1026-BD February 2006 - Rev 23-Feb-07 Features Ka-Band 2W Power Amplifier 22.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing

P1026

Abstract: P1026-BD 30SPA0553 DM6030HK TS3332LD XP1026-BD XP1026-BD-000V XP1026-BD-EV1 ka-band transistor
Contextual Info: 27.0-32.0 GHz GaAs MMIC Power Amplifier P1026-BD August 2007 - Rev 30-Aug-07 Features Ka-Band 2W Power Amplifier 22.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing

max cw 4004

Abstract: XP1026-BD-EV1 30SPA0553 DM6030HK P1026-BD XP1026-BD XP1026-BD-000V ID213
Contextual Info: 27.0-32.0 GHz GaAs MMIC Power Amplifier P1026-BD January 2010 - Rev 25-Jan-10 Features Ka-Band 2W Power Amplifier 21.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing

ka-band transistor

Contextual Info: 27.0-32.0 GHz GaAs MMIC Power Amplifier P1026-BD August 2007 - Rev 30-Aug-07 Features Ka-Band 2W Power Amplifier 22.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: 27.0-32.0 GHz GaAs MMIC Power Amplifier P1026-BD February 2006 - Rev 23-Feb-07 Features Ka-Band 2W Power Amplifier 22.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: 27.0-32.0 GHz GaAs MMIC Power Amplifier P1026-BD February 2009 - Rev 15-Feb-09 Features Ka-Band 2W Power Amplifier 21.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing

BD 139 140

Abstract: P1026 30SPA0553 DM6030HK P1026-BD TS3332LD XP1026-BD XP1026-BD-000V XP1026-BD-EV1 ID-2250
Contextual Info: 27.0-32.0 GHz GaAs MMIC Power Amplifier P1026-BD January 2009 - Rev 19-Jan-09 Features Ka-Band 2W Power Amplifier 21.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing

NDL5422P

Abstract: NDL5471R NDL5471RC NDL5471RD
Contextual Info: DATA SHEET PHOTO DIODE NDL5471R Series 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS φ120 µm InGaAs PIN PHOTO DIODE RECEPTACLE MODULE DESCRIPTION The NDL5471R Series is an InGaAs PIN photo diode receptacle module especially designed for a detector of long

P819

Abstract: P1026 p2532-01 P397 12x101 P394A
Contextual Info: HAMAMATSU CORP 11E D m 4 2 2 TbCH 0002720 =1 Ml PbS Photoconductive Cells Characteristics Type No. Out­ line No. /P.28 \ I 29/ Package Window Material Effective Sensitive Area Size Effective Sensitive Area Measure­ ment Temp. mm (mm2) IR Cutoff Wave­

B1720-02

Abstract: B1720-05 B1920-01 B2144-01 B1720 1x10-11 B1919-01 B2144 B1720-04 B1918
Contextual Info: HA MA M A T S U CORP D • 4ESTbOT 0QQ271S T ■ Ge Photodiodes: Uncooled Types Type No. Out­ line No. /P.28\ \ 29/ Package Window Material B1720-04 O 3 pin TO-18 B B1720-02 3 pin TO-18 B B1720-05 3 pin TO-18 B2144 B1918 O B1918-01 B1919 B1919-01 B1920-01

NDL5590P

Abstract: NDL5590P1 NDL5590P1C NDL5590P1D NDL5590P2 NDL5590P2C NDL5590PC NDL5590PD InGaAs APD Pre-Amplifier ingaas apd preamp receiver -20 1.25
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

Contextual Info: DATA SHEET PHOTO DIODE NDL5421P Series 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS ¿SO pm InGaAs PIN PHOTO DIODE MODULE DESCRIPTION NDL5421P Series is an InGaAs PIN photo diode module with multimode fiber. It is designed for 2.5Gb/s optical fiber communication systems and covers the wavelength range between 1 000 and 1 600 nm with high efficiency.

B1919-01

Abstract: B1920-01 hamamatsu PIN TO5
Contextual Info: HA MA M A T S U CORP D • 4ESTbOT 0QQ271S T ■ Ge Photodiodes: Uncooled Types Characteristics O Type No. Out­ line No. /P.28\ \ 29/ Package Window Material B1720-04 O 3 pin TO-18 B B1720-02 3 pin TO-18 B B1720-05 3 pin TO-18 B2144 B1918 O B1918-01 B1919

NDL5422P

Abstract: NDL5471R NDL5471RC NDL5471RD
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

schematic diagram inverter air conditioner

Abstract: schematic diagram dc-ac inverter schematic diagram for inverter air conditioner 80C196MC PHOTOCOUPLER P112 CD40938 cd40138 schematic diagram inverter control motor control inverter schematic diagram CD4584B
Contextual Info: Inverter Motor Control Using the 8xC196MC Microcontroller Design Guide Application Note August 2000 Order Number: 273175-002 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual

80C186

Abstract: 80C188 Am29F40C A01313 80C186 USER MANUAL
Contextual Info: PRELIMINARY Am186 ER and Am188~ER AMDÎI High-Performance, 80C186- and 80C188-Compatible, 16-Bit Embedded Microcontrollers with RAM DISTINCTIVE CHARACTERISTICS • E86™ family 80C186- and 80C188-compatible m icrocontrollers with enhanced bus interface

nec 2501

Abstract: PDF PIN APD DIODE DESCRIPTION NDL5421P NDL5421P1 NDL5421P2 NDL5421PC NDL5421PD NDL5421PS NDL5421PSC NDL55
Contextual Info: DATA SHEET PHOTO DIODE NDL5421P Series 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS φ 50 µm InGaAs PIN PHOTO DIODE MODULE DESCRIPTION NDL5421P Series is an InGaAs PIN photo diode module with multimode fiber. It is designed for 2.5Gb/s optical fiber communication systems and covers the wavelength range between 1 000 and 1 600 nm with high efficiency.

b427525

Abstract: nec ir receiver P1026
Contextual Info: DATA SHEET RECEIVER NDL5590P Series 150 fi m InGaAs AVALANCHE PHOTO DIODE WITH MULTIMODE FIBER INTERNAL PRE-AMPLIFIER DESCRIPTION NDL5590P Series is an InGaAs avalanche photo diode module with multimode fiber incorporating silicon pre­ amplifier 1C. It is designed as an optical receiver for fiber optic communications systems such as SDH, SONET,

ZD-98 F

Abstract: PI019
Contextual Info: _ P R E L I M I N A R Y _ AM D£1 TQFP CONNECTION DIAGRAMS AND PINOUTS Am186EM Microcontroller Top Side View—100-Pin Thin Quad Flat Pack TQFP O g 3 o i s S É É X o ? CC DC 2 S I- H Q ü O CE C*5 CM CM CO |CO ¡CO „ ico ico 9 ICO

6X101

Abstract: P839-08 K1713-03 B1920-01 P819 P2837-01 ir P838 P838 thermistor inas detector inas
Contextual Info: H A MA MAT S U CORP n E D • 425^bQT 000272b T ■ 'AV InAs, InSb Detectors Characteristics F0v=60° ( /P.28\ 29) Effective Sensitive Area Measure­ ment Temp. (mm) fC) IR Cutoff Wave­ length Ac fam) Min. Typ. 3 .2 3 .6 5X108 1X109 3.1 3 .2 3X109 5X109

lm7805cv

Abstract: METAL DETECTOR PROGRAM PIC16F84 planar spiral coil Ferrite core 13.56 MHz RFID tag inductor antennas 5043cx100r0j PSK reader RFID FSK RFID reader SOURCE CODE ,microchip PG103001 DS00680C 4-henry choke
Contextual Info: microID 125 kHz RFID System Design Guide  2004 Microchip Technology Inc. DS51115F DATA SHEET MARKINGS Microchip uses various data sheet markings to designate each document phase as it relates to the product development stage. The markings appear at the bottom of the data sheet, between the copyright and document and page

NDL5421P

Abstract: NDL5421P1 NDL5421P2 NDL5421PC NDL5421PD NDL5421PS NDL5421PSC
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: PRELIMINARY A m 1 8 6 “ E R a n d A M D ÎI A m 1 8 8 'E R High-Performance, 80C186- and 80C188-Compatible, 16-Bit Embedded Microcontrollers with RAM DISTINCTIVE CHARACTERISTICS • E86 family 80C186- and 80C188-compatible m icrocontrollers with enhanced bus interface