G5832 Search Results

G5832-21

Abstract: 4801B G5832-11 G3476-01 B1920-01
Contextual Info: Dimensional Outlines Unit: mm i G5832-02, -03 O G3476-01, etc. WINDOW f 3.0+0 1 G5832-05, etc. f 5 4+0.2 f 5.410.2 f 13 9+0.2 f 4 7 t0 1 <p 4.710.1 ÿ 12.3510.1 f W IN D O W I < M 0.5t01 *4 § ! i WHDA0002EB Q G5832-21, etc. O G5832-11, etc. 4 15.3=0.2 WINDOW

Contextual Info: Ge Photodiodes Non-cooled Types NIR (Near Infrared) detectors for stable operation at room temperature • High stability over extended time periods Ge photodiodes are planar type photovoltaic devices that provide stable responsivity over extended time periods.

Contextual Info: Infrared Detectors with Built-in Preamplifiers Dewar Types Easy-to-use, high performance de­ vices with the ultimate in responsivity These devices combine a dewar type detector with a matched pream­ plifier into a metal case. Simply by connecting to a DC power supply,

G5832

Contextual Info: Spectral Response 0.7 to 1.7 |iim • Spectral Response • Dark Current vs. Reverse Voltage • Terminal Capacitance vs. Reverse Voltage Typ.Ta=25’C.1=1MHz 0.6 0.8 1.0 1.2 1.4 1.6 1.8 WAVELENGTH (/im ) 2.0 1 0 -' The cut-off wavelengths of the TE-cooled de­

Contextual Info: Ge Photodiodes Cooled Types Achieves higher S/N ratio by cooling • Optimized for low level infrared photometry • Lower temperature detection limit: Approx. 200 °C By cooling Ge photodiodes, the dark current can be reduced effec­ tively and the S/N ratio improved.

P4488

Abstract: G5832-05 G5832-11 KI80 pbse B1920-01 a7050
Contextual Info: Pyroelectric Detectors Ideally suited for human body sensing and simplified analytical instruments Broad spectral response Operates at room temperature Low cost Thermally-Compensated Types Single Element Including a thermal compensation element in the same package, these

P4488

Abstract: P4488-02 G5832-02 C4159 b617 G3476 a7050 P394 series G5832-05 P3782-12
Contextual Info: Pyroelectric Detectors Ideally suited for human body sensing and simplified analytical instruments Broad spectral response Operates at room temperature Low cost Thermally-Compensated Types Single Element Including a thermal compensation element in the same package, these

G5832-01

Abstract: G5832-03 G5832-05 G3476-01
Contextual Info: InGaAs PIN Photodiodes standard Types Spectral Response Range: 0.7 to 1.7/0.9 to 1.7 |xm High-speed and low noise NIR (Near Infrared) detectors InGaAs PIN photodiodes have small terminal capacitance and there­ fore achieve high-speed response. In addition, these devices feature

G5832-03

Abstract: G3476-03 G3476-05 G5832-01 G5125-03 G5832-05 G5125-10 G5832-21 G3476-01 A3179-01
Contextual Info: InGaAsPIN Photodiodes Standard Types Spectral Response Range: 0.7 to 1.7/0.9 to 1.7 |am High-speed and low noise NIR (Near Infrared) detectors InGaAs PIN photodiodes have small term inal capacitance and there­ fore achieve high-speed response. In addition, th ese devices feature

G5832-01

Abstract: G5832
Contextual Info: InGaAs PIN Photodiodes Standard Types, Short-wavelength Enhanced Types, etc, High-performance NIR (Near Infrared) detectors with low noise • A wide line-up of device types are available: L a rg e a re a ty p es, sh o rt-w a v e len g th e n h an c e d ty p e s, etc.

Infrared photodiode preamplifier

Contextual Info: Two-color Detectors Broad spectral response range from UV through infrared • Broad spectral response range Two-color detectors cover a broad spectral response range, and are effectively used in such applications as flame monitors, spectro­ photometers and film thickness gauges.

P3226

Abstract: P5168 P3226-02 G5832-05 P2682-01 P394 series Photodiode 2PIN TYPES G3476-01 G5832-02 P3258-02
Contextual Info: PbS Photoconductive Detectors Easy-to-use photoconductive detec­ tors with high responsivity over 3 jim • Operates at room temperature Since PbS cells operate stably at room temperature, they are used in a wide range of applications such as radiation thermometers and flame

thermistor inas

Abstract: INSB PHOTODIODE 101 thermistor InSb spectral response insb detector preamplifier c4159
Contextual Info: InAs, InSb Photovoltaic Detectors Photovoltaic detectors with high­ speed response and low noise • Long cooling hold time: 8 hours A large capacity glass dewar cooled by liquid nitrogen is used for standard detector package. It allows for 8-hour continuous cooling.

pr 8501 b

Abstract: P394A P3226-02 P3226 PBS P394 series
Contextual Info: PbS Photoconductive Detectors Easy-to-use photoconductive detec­ tors with high responsivity over 3 jim • Operates at room temperature Since PbS cells operate stably at room temperature, they are used in a wide range of applications such as radiation thermometers and flame

G5832-01

Abstract: G5853-01 G5125-10 G5832-05 G5832-02 G5832-03 G7233 B1919-01 g7233-256 B1920-01
Contextual Info: Applications of Infrared Detectors Infrared radiation is utilized in a wide range of technical and scientific fields, including industry, agriculture, medicine, astronomy, com­ munications and remote sensing from space. Hamamatsu infrared detectors are used in many applications as listed in the table below.

lvds+20+pin+to+30+pin

Contextual Info: MCT HgCdTe Photoconductive Detectors ( Thermoelectric cooling assures stable operation over extended time periods t e -c o o m Types) :C 111 • Choice of spectral response The band gap of HgCdTe can be modified by controlling the compo­ sition ratio of HgTe and CdTe. Utilizing this fact, various types are

Contextual Info: Infrared Detectors with Built-in Preamplifiers Non-cooled Types, TE-cooled Types Integral detector/Preamplifier combination assures easy handling and reliable operation These devices integrate an infrared detector with the matched pream­ plifier into a compact case. By simply connecting to a DC power sup­

transistor C4159

Contextual Info: InGaAs Linear Image Sensors NIR applications 0.9 to 1.7 ¡im/1.2 to 2.6 pm The InGaAs linear image sensors are self-scanning photodiode arrays designed specifically for detectors in near infrared multichannel spectroscopy. They incorporate an InGaAs photodiode array chip, a

Contextual Info: MEETbDT OGGHböb T HS Spectral Response 0.19 to 5 [im Type No. Outline No. P.36 Detector Element Active Area (mm) Shunt Resistance or Dark Resistance (MQ) Peak Photo Element Sensitivity Sensitivity Tempera­ Wavelength S ture Xp X.=?ip (-C ) (nm) (AW ) NEP

G5832-01

Abstract: 50x200 g5746 j13n
Contextual Info: Infrared Detectors InGaAs PIN Photodiodes Type No. Coated Type Packjßs Artwe Area ät-octral Responso flange X m ru (Um Photo aenstfivrty 'A /w ; X iO 76 urn J.=1.3nnv CUt-olt Dé* Cufrent ii. Vfisf Shyril Hbh “ VfestO-mV ."A| IMS!) v ,~ \c D* UlJH NEP

P5138-025

Abstract: P5138-010
Contextual Info: MCT HgCdTe PhotOCOnductive DetectorS(Dewar Types) High sensitivity in the long wavelength range and high-speed response • Choice of spectral response The band gap of HgCdTe can be modified by controlling the compo­ sition ratio of HgTe and CdTe. Utilizing this fact, various types are