G6891 Search Results

G5832-21

Abstract: 4801B G5832-11 G3476-01 B1920-01
Contextual Info: Dimensional Outlines Unit: mm i G5832-02, -03 O G3476-01, etc. WINDOW f 3.0+0 1 G5832-05, etc. f 5 4+0.2 f 5.410.2 f 13 9+0.2 f 4 7 t0 1 <p 4.710.1 ÿ 12.3510.1 f W IN D O W I < M 0.5t01 *4 § ! i WHDA0002EB Q G5832-21, etc. O G5832-11, etc. 4 15.3=0.2 WINDOW

Contextual Info: Infrared Detectors with Built-in Preamplifiers Non-cooled Types, TE-cooled Types Integral detector/Preamplifier combination assures easy handling and reliable operation These devices integrate an infrared detector with the matched pream­ plifier into a compact case. By simply connecting to a DC power sup­

transistor C4159

Contextual Info: InGaAs Linear Image Sensors NIR applications 0.9 to 1.7 ¡im/1.2 to 2.6 pm The InGaAs linear image sensors are self-scanning photodiode arrays designed specifically for detectors in near infrared multichannel spectroscopy. They incorporate an InGaAs photodiode array chip, a

G5832-01

Abstract: 50x200 g5746 j13n
Contextual Info: Infrared Detectors InGaAs PIN Photodiodes Type No. Coated Type Packjßs Artwe Area ät-octral Responso flange X m ru (Um Photo aenstfivrty 'A /w ; X iO 76 urn J.=1.3nnv CUt-olt Dé* Cufrent ii. Vfisf Shyril Hbh “ VfestO-mV ."A| IMS!) v ,~ \c D* UlJH NEP

P5138-025

Abstract: P5138-010
Contextual Info: MCT HgCdTe PhotOCOnductive DetectorS(Dewar Types) High sensitivity in the long wavelength range and high-speed response • Choice of spectral response The band gap of HgCdTe can be modified by controlling the compo­ sition ratio of HgTe and CdTe. Utilizing this fact, various types are