4X101 Search Results

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

oximeter

Abstract: PDV-C173SM
Contextual Info: PDV-C173SM Photodiode in Plastic Surface Mount Package PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] .158 [4.00] .079 [2.00] .043 [1.10] CATHODE MARK .019 [0.48] CATHODE 2X .020 [0.51] .085 [2.15] 130° VIEWING ANGLE .197 [5.00] .158 [4.00] .173 [4.40]

C1383 NPN transistor collector base and emitter

Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Contextual Info: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,

P819

Abstract: P1026 p2532-01 P397 12x101 P394A
Contextual Info: HAMAMATSU CORP 11E D m 4 2 2 TbCH 0002720 =1 Ml PbS Photoconductive Cells Characteristics Type No. Out­ line No. /P.28 \ I 29/ Package Window Material Effective Sensitive Area Size Effective Sensitive Area Measure­ ment Temp. mm (mm2) IR Cutoff Wave­

hamamatsu c1000

Abstract: A2098 transistor a2098 A4869 A4539 C1000-12 image intensifier quantum efficiency data 40VA A3472-50 UV led 200nm
Contextual Info: HIGH-SPEED GATED IMAGE INTENSIFIER UNITS C7244, C7245 Capturing still images of high-speed phenomena! C-mount adapter is optional. The Hamamatsu C7244 and C7245 are high-speed gated image intensifier units developed specifically for imaging of highspeed phenomena occurring at low light levels. These image intensifier units consist of an image intensifier head and its controller with a built-in high voltage power supply. The image intensifier head easily connects to the front of a CCD camera to configure a high-speed shutter camera that allows capturing still images of high-speed phenomena at any desired timing. The C7244

Contextual Info: BPV23FL y m m f _ ▼ Vishay Telefunken Silicon PIN Photodiode Description BPV23FL is a high speed and high sensitive PIN photodiode in a plastic package with a spherical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAIAs IR emit­

Contextual Info: Photodiode in Plastic Surface Mount Package PDB-C171SM PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] .158 [4.00] .043 [1.10] CATHODE MARK .079 [2.00] .019 [0.48] CATHODE 2X .020 [0.51] .085 [2.15] 130° VIEWING ANGLE .197 [5.00] .158 [4.00] .173 [4.40]

ford fiesta

Abstract: CAR ALTERNATOR REGULATOR 24 volt IR223X electric motor using float control future enhancement of DC MOTOR SPEED CONTROL CAR ALTERNATOR REGULATOR 3 phase motor soft starter with two SCR
Contextual Info: The Power Conversion Process as a Prosperity Machine Part II — Power Semiconductor Road Maps by Alex Lidow, CEO International Rectifier Last year, I prepared a paper about the role of power conversion in the broadest possible context: power conversion as an instrument for change [1]. To recap very briefly: the

photovoltaic photoconductive

Abstract: PDI-C172SMF
Contextual Info: PDI-C172SMF Photodiode in Plastic Surface Mount Package PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] .158 [4.00] .079 [2.00] .043 [1.10] CATHODE MARK .019 [0.48] CATHODE 2X .020 [0.51] .085 [2.15] 130° VIEWING ANGLE .197 [5.00] .158 [4.00] .173 [4.40]

Contextual Info: Photodiode in Plastic Surface Mount Package PDB-C171SM PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] .158 [4.00] .079 [2.00] .043 [1.10] CATHODE MARK .019 [0.48] CATHODE 2X .020 [0.51] .085 [2.15] 130° VIEWING ANGLE .197 [5.00] .158 [4.00] .173 [4.40]

tektronix 463

Abstract: LVDS-008 10G BERT GETEK FR4 AN-81 national ROGERS4350 Amphenol r2100 1GHz tyco TR30 Teradyne connector
Contextual Info: LVDS オーナーズ・マニュアル 第3版 2004 年 12 月 エンジニアがオーナーズ・マニュアルを手にするのはいつも最後です。エンジニアは説明書を読 まなくとも、自分の知識や技術で製品を使いこなせると考えています。確かに私の経験でも、直感

Contextual Info: SENSITRON SEMICONDUCTOR SHD4137-XXX TECHNICAL DATA DATA SHEET 4137, REV. - High CTR Optocoupler Features: • • • • • LSTTL Compatible Low Input Current Open Collector Output High Current Transfer Ratio Available in DIP and SOIC Packages -411 DIP

stm cl-90

Abstract: GR-1244 GR-253 MT90401 ZL30402 ZL30407 ZL30407QCC ZL30410 G735
Contextual Info: ZL30407 SONET/SDH Network Element PLL Data Sheet Features March 2004 • Meets requirements of GR-253 for SONET Stratum 3 and SONET Minimum Clocks SMC • Meets requirements of GR-1244 for Stratum 3 • Meets requirements of G.813 Option 1 and 2 for SDH Equipment Clocks (SEC)

HgCdTe

Abstract: PA100 ZnSe judson PA-100
Contextual Info: E C U I H C T I Z J I v I C J UDSON 3TE J> . S r ie S • 303Db05 00 00235 3 M J U D Short-Wave Mercury Cadmium Telluride Detectors 2 to 5 jam 7-m-m Figure 24-1 Typical Detectivity vs Wavelength for J15TE Series Short-Wave HgCdTe Detectors General J15TE Series "Short-Wave" detectors

1550nm photodiode nep

Abstract: photodiode 1550nm nep 35PD3M-TO photodiode responsivity 1550nm Photodiode, 1550nm NEP InGaAs Photodiode 1550nm 35PD3M InGaas PIN photodiode, 3mm
Contextual Info: Large Area InGaAs p-i-n Photodiode 35PD3M-TO The 35PD3M-TO series of InGaAs photodiodes has a 3mm-diameter photosensitive region. Applications include high sensitivity instrumentation and sensing. Class A devices feature very low dark current and high dynamic impedance. High reliability is assured through planar,

PDB-C145

Contextual Info: Plastic Photodiode Packages with Leads PDB-C145 PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] .098 [2.49] .043 [1.09] 2X .354 [9.0] MIN ANODE MARK .020 [0.51] .016 [0.41] CATHODE Ø.067 [1.70] 48° VIEWING ANGLE R.034 [0.40] .008 [0.20] 2X .006 [0.15]

LM016L

Abstract: LM213XB LM258XB LMG6411PLGE LMG6250ULGR HITACHI LM213XB LCD LM016L lm086aln hitachi lcd lm 234 LCD 480x64
Contextual Info: LCD M odule Line Up G raphic D isp lay LCD M odule •L M 2 5 8 X B Ili • LM 213X B • LM 721XBN P •L M G 6 3 9 0 Q .H G R • LM 246X • L M G 6 471X T F C ‘ ífiT tU M U U k M L A M i •L M 0 6 4 0 0 P L G R • LM G 5040XU FC • LM 215X B •

Contextual Info: Photodiode in Plastic Surface Mount Package PDI-C172SMF PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] .158 [4.00] .079 [2.00] .043 [1.10] CATHODE MARK .019 [0.48] CATHODE 2X .020 [0.51] .085 [2.15] 130° VIEWING ANGLE .197 [5.00] .158 [4.00] .173 [4.40]

wf vqc 10d

Abstract: TGS 2201 SMD W2T TRANSISTOR SMD W2T 72 EX5962 MMI PAL14L8 C57401j tms 6011 MIMI Ti PROM programming procedure w2t smd
Contextual Info: 2 Specialty Memory Products 1988 Data Book Advanced Micro Devices Monolithic ryisn Memories UliTlU A W h o lly O w n e d S u b s id ia ry o f A d v a n c e d M ic r o D e vice s a Advanced Micro Devices Sp ecialty Memory Products Data Book/Handbook Introduction

Contextual Info: SENSITRON SEMICONDUCTOR SHD4134-XXX TECHNICAL DATA DATA SHEET 4134, REV. - High Speed CMOS Optocoupler Features: • • • • • • Wide Operating Range 4.5V to 20V 300ns propagation delay 5Mbd Typical Signal Rate Low Input Current (1.6mA to 1.8mA)

J15TE

Abstract: PA-101 Pyroelectric detector J15TE4 PA101 pa300
Contextual Info: J15TE Short Wave Mercury Cadmium Telluride Detectors 2 to 5 um judson techn al q gi es Figure30-1 Typical Detectivity vs Wavelength for J15TE Series Short-Wave HgCdTe Detectors G e n e ra l J15TE Series "Short-Wave" detectors are photoconductive HgCdTe elements on

PH 33J

Abstract: w6553 LM 385 N W34400 44811 Winslow W3480 W35500 W36600 W62200
Contextual Info: W3480 W62200 W34400 W65520 W35500 Series W36600 Single in Line Products • • • • • Sockets — Headers — Connectors Screw machine & stamped contacts Very wide range plus “Snap Apart” makes any size from 1 to 32 contacts UL 94 V -0 approved material

CNT-90

Contextual Info: Частотомеры электронно-счётные Частотомер электронно-счётный CNT-90 PENDULUM INSTRUMENTS AB. • Частотный диапазон 0,001 Гц … 14 ГГц • Высокая скорость измерений: до 250 К в секунду

6X101

Abstract: P839-08 K1713-03 B1920-01 P819 P2837-01 ir P838 P838 thermistor inas detector inas
Contextual Info: H A MA MAT S U CORP n E D • 425^bQT 000272b T ■ 'AV InAs, InSb Detectors Characteristics F0v=60° ( /P.28\ 29) Effective Sensitive Area Measure­ ment Temp. (mm) fC) IR Cutoff Wave­ length Ac fam) Min. Typ. 3 .2 3 .6 5X108 1X109 3.1 3 .2 3X109 5X109