ATF101 Search Results

ATF-10136

Abstract: gaas fet micro-X Package ATF-10136-STR ATF-10136-TR1 36 Micro-X agilent atf10136 ATF 136
Contextual Info: 0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10136 Features Description • Low Noise Figure: 0.5 dB Typical at 4 GHz The ATF-10136 is a high performance gallium arsenide Schottky-barriergate field effect transistor housed in a cost effective microstrip package. Its

GHZ micro-X Package

Abstract: micro-x ATF-10136 atf 26836 ATF-25570 ATF-10236 ATF-25735 ATF-26884 ATF-13736 ATF-10100
Contextual Info: Low Noise MESFETs Typical Specifications @ 25°C Case Temperature Gate Width (mm) Optimum Frequency Range (GHz) Test Frequency (GHz) Vdd NFo Ga P1 dB [1] (V) (dB) (dB) (dBm) ATF-13100 250 2 - 18 12 2.5 1.1 9.5 ATF-13336 250 2 - 16 12 2.5 1.4 ATF-13736 250

ATF-10100

Abstract: ATF-10100-GP3 ATF10100
Contextual Info: 0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10100 Features • Low Noise Figure: 0.5 dB Typical at 4 GHz • Low Bias: VDS = 2 V, IDS␣ =␣ 25 mA chip. Its premium noise figure makes this device appropriate for use in the first stage of low noise

ATF-10100

Contextual Info: What H E W L E T T * mLliMPACKARD 0.5-12 GHz Low Noise Gallium Arsenide FET Technical Data A TF-10100 F e atu res • L o w N o ise F ig u re : 0.5 dB Typical at 4 GHz • L o w B ia s: Vds = 2V,I ds = 25mA • H igh A sso c ia te d G ain: 14.0 dB Typical at 4 GHz

ATF-10136-TR1

Abstract: ATF-10136 ATF-10136-STR 36 Micro-X
Contextual Info: 0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10136 Features Description • Low Noise Figure: 0.5 dB Typical at 4 GHz The ATF-10136 is a high performance gallium arsenide Schottky-barriergate field effect transistor housed in a cost effective microstrip package. Its

ATF-10135

Abstract: Avantek 10135 ATF10135 avantek ATF101
Contextual Info: GbE D I AVANTEK INC AVANTEK im n b fa 00G 5% 4 4 | T-31-25 ATF-10135 2-12 GHz Low Noise Gallium Arsenide FET Avantek micro-X Package Features • Low Noise Figure 0.5 dB typical at 4 GHz • Low Bias V d s = 2 V , I d s = 2 0 mA • High Associated Gain

25C1815

Contextual Info: WhoI ATF-10100 0.5-12 GHz Low Noise Gallium Arsenide FET H EW LETT WL'HM PACKARD Features • • • • Chip Outline Low Noise Figure: 0.5 dB typical at 4 GHz Low Bias: VDS = 2 V, IDS = 25 mA High Assosiated Gain: 14.0 dB typical at 4 GHz High Output Power: 21.0 dBm typical

S parameters for ATF 10136

Abstract: AVANTEK transistor Avantek atf-1323
Contextual Info: AVANTEK E GE INC D 0AVANTEK im n tb 0D0kiS35 a ATF-10136 0.5-12 GHz Low Noise Gallium Arsenide FET T'K-^S" Features • • • • • • Avantek 36 micro-X Package1 Low Noise Figure: 0.5 dB typical at 4 GHz Low Bias: V ds = 2 V , I ds = 20 mA High Associated Gain: 13.0 dB typical at 4 GHz

AVANTEK transistor

Contextual Info: AVANTEK INC EOE D im iU L . avan tek data sheet OQObâMc? b ATF-10100 0.5-12 GHz Low Noise Gallium Arsenide FET October, 1989 C T31-2S Avantek Chip Outline Features • • • • Low Noise Figure: 0.5 dB typical at 4 GHz Low Bias: V ds = 2 V , I ds = 25 mA

NE24483

Abstract: AF367 NE38883 BFT93R NE13783, ATF-10135 BFT92R BF936 CFX21 to119
Contextual Info: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Po Manufacturer Max W V(BR)CBO (V) fose Max (Hz) Gp Po N.F. (dB) (W) (dB) at fTeat (Hz) Ie Max (A) TOpe, Mati. Max (OC) Package Style UHF/Microwav Transistors, Bipolar NPN (Co nt' d) S01543 ThmsnCSFEFC

Toko inductor 20211

Abstract: AMP2300 Transistor S 40443 AN-G005 ATF-21186 Toko 20211 low noise design ATF 10136 INA-02184 LTC1044CS8 MSA-0686
Contextual Info: Low Noise and Moderate Power Amplifiers Using the ATF-21186 Application Note 1064 Introduction This application note describes the use of a low cost Gallium Arsenide Field Effect Transistor GaAs FET designed specifically for the VHF through 2500 MHz frequency range. The Agilent

S parameters for ATF 10136

Abstract: Hewlett-Packard MICRO-X ATF-10136 ATF10136-STR 8G75
Contextual Info: E S I HEW LETT* WLEM PA C K A R D 0 .5 -1 2 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10136 Features Description • Low Noise Figure: The ATF-10136 is a high performance gallium arsenide Schottky-barriergate field effect transistor housed in a

7804 regulator

Abstract: AFT-10136 S parameters for ATF 10136 AN-A002 low noise design ATF 10136 ATF10236 AFT-10236 7804 voltage regulator MSF8885
Contextual Info: 4 GHz Television Receive Only LNB Design Application Note A007 NOTE: This publication is a reprint of a previously published Application Note and is for technical reference only. For more current information, see the following publications: • AN1091, 1 and 2 Stage 10.7 to 12.7 GHz Amplifiers Using the

laser diode spice modeling

Abstract: laser diode spice model simulation spice ATF 10136 atf-10136 spice MSA-09 ATF13136 mmic a20 MSA-0311 AT-41500 S parameters for ATF 10136
Contextual Info: Application Design Tools Services and Applications Literature Hewlett-Packard customers are supported by an Applications Engineering Department. The applications engineering staff investigates circuit applications, design techniques, and device performance. The results of these

AN-G005

Abstract: transistor 1248 Toko inductor 20211 transistor tt 2206 transistor w1a 94 transistor rf m 9860 ST 9343 transistor bd 9262 ef Toko 20211 LT 7202
Contextual Info: r m HEW LETT mL'/LM P A C K A R D Low N oise and M oderate P ow er A m plifiers U sin g th e ATF-21186 Application Note 1064 In tro d u c tio n This application note describes the use of a low cost Gallium Arsenide Field Effect T ransistor GaAs FET designed specifically

phemt biasing ATF-36077

Abstract: atf-36077 low noise design ATF 10136 microstripline ATF-10136 ATF36077 thickness of microstripline AN-G004 D5880 amplifier lna low noise amplifier s-band
Contextual Info: Low Noise Amplifier for 2.3 GHz using the ATF-36077 Low Noise PHEMT Application Note 1129 Introduction Design The Avago Technologies ATF-36077 PHEMT device is described in a low noise amplifier for 2.3 GHz. The ATF36077 is characterized for use as a low noise amplifier in

atf-41435

Abstract: 99250 schematic diagram receiver data circuit satellite ATF-10235 5091-8823E
Contextual Info: Design of a 4 GHz LNA for a TVRO System Application Note A002 Introduction With the advent of low cost GaAs FETs, the consumer home entered a new phase in communications: the era of satellite television reception. A typical Television Receive Only TVRO system for this market is

S parameters for ATF 10136

Abstract: ATF-10136 TSC7662 ATF10136 AN-A002 low noise design ATF 10136 Teledyne Semiconductor NE555
Contextual Info: S-Band Low Noise Amplifier Using the ATF-10136 Application Note G004 ΓO Introduction This application note documents the results of using the ATF-10136 in low noise amplifier applications at S band. The ATF-10136 device is capable of a 0.5 dB noise figure at 2.3 GHz. The ATF-10136 is packaged

IAM-81008

Abstract: 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800
Contextual Info: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101

avantek

Abstract: ATF-10170 Avantek S
Contextual Info: AVANTEK INC 2GE D • data sheet 1141=1 lab OGObflMb 3 ATF-10170 0.5-12 GHz Low Noise Gallium Arsenide FET October, 1989 AVANTEK T-ll-ZS Avantek 70 mit Package Features • • • • • ■040 Low Noise Figure: 0.5 dB typical at 4 GHz Low Bias: V ds = 2 V, Ids = 25 mA

Contextual Info: 20E D AVANTEK INC 0 AVANTEK • Hi data sheet 1 1 4 1 % ^ QDQhflMb 3 ATF-10170 0.5-12 GHz Low Noise Gallium Arsenide FET October, 1989 T-S i-ZS Avantek 70 mit Package Features • • • • • Low Noise Figure: 0.5 dB typical at 4 GHz Low Bias: V ds = 2 V , I ds = 25 mA

atf 204

Abstract: ATF-10100-GP1
Contextual Info: HEWLETT-PACKARD/ Cfl PNTS blE D WIJ}« HEWLETT mLUm PACKARD • 4447504 * Î ST ■ H P A ATF-10100 0.5-12 GHz Low Noise Gallium Arsenide FET Features • • • • 000^678 Chip Outline Low Noise Figure: 0.5 dB typical at 4 GHz Low Bias: VDS = 2 V, IDS = 25 mA

Contextual Info: HEWLETT-PACKARD/ CHPNTS LIE ]> T O * H EW LETT wHEMPACKARD • H 4 4 7 5A 4 0D[Hflfl3 217 ■ H P A ATF-10170 0.5-12 GHz Low Noise Gallium Arsenide FET Features 70 mil Package • • • • Low Noise Figure: 0.5 dB typical at 4 GHz Low Bias: V ds = 2 V, Ids = 25 mA

ATF1013

Contextual Info: What H E W L E T T * mLliMPACKARD 0.5-12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10136 F e atu res D escription • Low N oise Figure: 0.5 dB Typical at 4 GHz The ATF-1013 6 is a high performance gallium arsenide Schottky-barriergate field effect transistor housed in a