ATF10100 Search Results
ATF10100 Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| ATF-10100 | Agilent Technologies | 0.5-12 GHz Low Noise Gallium Arsenide FET | Original | 49.36KB | 4 | ||
| ATF-10100-GP3 | Agilent Technologies | 0.5-12 GHz Low Noise Gallium Arsenide FET | Original | 49.36KB | 4 | ||
| ATF10100-GP3 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 40.65KB | 1 |
ATF10100 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
GHZ micro-X Package
Abstract: micro-x ATF-10136 atf 26836 ATF-25570 ATF-10236 ATF-25735 ATF-26884 ATF-13736 ATF-10100
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Original |
atf-13100atf-13336atf-13736atf-13786+12 | |
ATF-10100
Abstract: ATF-10100-GP3 ATF10100
|
Original |
atf-10100atf-10100-gp3atf10100 | |
ATF-10100Contextual Info: What H E W L E T T * mLliMPACKARD 0.5-12 GHz Low Noise Gallium Arsenide FET Technical Data A TF-10100 F e atu res • L o w N o ise F ig u re : 0.5 dB Typical at 4 GHz • L o w B ia s: Vds = 2V,I ds = 25mA • H igh A sso c ia te d G ain: 14.0 dB Typical at 4 GHz |
OCR Scan |
tf-10100atf-10100 | |
25C1815Contextual Info: WhoI ATF-10100 0.5-12 GHz Low Noise Gallium Arsenide FET H EW LETT WL'HM PACKARD Features • • • • Chip Outline Low Noise Figure: 0.5 dB typical at 4 GHz Low Bias: VDS = 2 V, IDS = 25 mA High Assosiated Gain: 14.0 dB typical at 4 GHz High Output Power: 21.0 dBm typical |
OCR Scan |
atf-10100nit12225c1815 | |
AVANTEK transistorContextual Info: AVANTEK INC EOE D im iU L . avan tek data sheet OQObâMc? b ATF-10100 0.5-12 GHz Low Noise Gallium Arsenide FET October, 1989 C T31-2S Avantek Chip Outline Features • • • • Low Noise Figure: 0.5 dB typical at 4 GHz Low Bias: V ds = 2 V , I ds = 25 mA |
OCR Scan |
atf-10100t31-2savantek transistor | |
HRMA-0470B
Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
|
OCR Scan |
e-28230s-164ch-8902hrma-0470b+9 | |
IAM-81008
Abstract: 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800
|
Original |
1n57111n57121n57191n5767+16 | |
atf 204
Abstract: ATF-10100-GP1
|
OCR Scan |
atf-10100total60atf 204atf-10100-gp1 | |
5082-2830
Abstract: IAM-81008 HSMP-3895 hsms-2850 5082-0012 8205 datasheet hsms-285b HSMS-285C HSMS-2862 MSA-0870
|
Original |
1n57111n57121n57191n5767+16 | |
GHZ micro-X Package
Abstract: ATF-36163 Field Effect Transistors ATF-26884 atf 26836 ATF-10100 ATF-10136 ATF-13100 ATF-13336 ATF-13736
|
Original |
atf-36077atf-36163ot-363sc-70+14 | |
|
Contextual Info: 0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10100 Features • Low Noise Figure: 0.5 dB Typical at 4 GHz • Low Bias: VDS = 2 V, IDS = 25 mA chip. Its premium noise figure makes this device appropriate for use in the first stage of low noise |
Original |
atf-10100metalliz055965-8702e | |
HSCH-5337
Abstract: HSMS-2850 5082-3188 HSMP-3804 ifd 0512 5082-2970 5082-2800 SERIES DATASHEET 5082-2830 AT-41470 HSCH-9301
|
Original |
1n57111n57121n57191n5767+16 | |
ATF-35176
Abstract: ATF-3507 ATF-35076 ATF-21170 ATF-44100 ATF26550 ATF-13036 ATF-10170 ATF-35576 ATF-35376
|
OCR Scan |
atf-10100atf-13100atf-21100atf-25100+14 | |
AT-41486
Abstract: 8060 IAM MSA-1105 VTO-8000 HSMP-3895 HSCH-5337 ATF-46171 HSMS-2804 HSCH-5313 HSMS-2862
|
Original |
1n57111n57121n57191n5767+15 |