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    D5880 Datasheets (4)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    D5880
    		Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF 137.36KB 1
    D5880A
    		Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF 137.36KB 1
    D5880B
    		Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF 137.36KB 1
    D5880C
    		Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF 137.36KB 1
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    D5880 Price and Stock

    Samtec Inc

    Samtec Inc FW-05-05-G-D-588-085

    .050 Flex Stack Flexible Micro Board Stacker Surface Mount
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    Master Electronics FW-05-05-G-D-588-085
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    Avnet Americas FW-05-05-G-D-588-085 Tube 1 Weeks, 2 Days 1
    • 1 $2.39
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    • 1000 $1.32
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    Sager FW-05-05-G-D-588-085 1
    • 1 $2.87
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    • 100 $1.95
    • 1000 $1.46
    • 10000 $1.24
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    Samtec Inc FW-10-05-G-D-588-070

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    Samtec Inc FW-03-05-G-D-588-085

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    Master Electronics FW-03-05-G-D-588-085
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    Samtec Inc FW-02-05-G-D-588-085

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    Master Electronics FW-02-05-G-D-588-085
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    Samtec Inc FW-04-05-G-D-588-085-A

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    Master Electronics FW-04-05-G-D-588-085-A
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    Find more D5880 price and stock on Findchips.com

    D5880 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Toko inductor 20211

    Abstract: AMP2300 Transistor S 40443 AN-G005 ATF-21186 Toko 20211 low noise design ATF 10136 INA-02184 LTC1044CS8 MSA-0686
    Contextual Info: Low Noise and Moderate Power Amplifiers Using the ATF-21186 Application Note 1064 Introduction This application note describes the use of a low cost Gallium Arsenide Field Effect Transistor GaAs FET designed specifically for the VHF through 2500 MHz frequency range. The Agilent


    Original     		atf-211865962-6875etoko inductor 20211amp2300+7transistor s 40443an-g005toko 20211low noise design atf 10136ina-02184ltc1044cs8msa-0686 PDF

    TB228

    Abstract: c12 ph zener diode ph c15 zener c10 ph zener zener diode c16 ph
    Contextual Info: March 6, 2014 TB228 Frequency=20-1000MHz Pout=1W Gain=13dB avg. Vds=28Vdc Idq=0.8A LP801 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com March 6, 2014 PH:(805)484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012


    Original     		tb22820-1000mhz28vdclp801+10cf14jt150rcf14jt3k90eca-1jhg470cf14jt10k0mcr18ezhj222mcr18ezpj103c12 ph zener diodeph c15 zenerc10 ph zenerzener diode c16 ph PDF

    TRANSISTOR noise figure measurements

    Abstract: Hewlett-Packard application note 970 et1102 14CL 40 HFET-1101 HFET-1102 2N6680 D5880 application note Hewlett-Packard 970 line AMPLIFIER satellite
    Contextual Info: NEW H E W L E T T P A C KARD 2N6680 HFET-1101 HFET-1102 MICROWAVE GaAS FETS GaAs FETs COMPONENTS Features LOW NOISE FIGURE 1.6 dB Typical at 4 GHz (2N6680) 1.7 dB Maximum at 4 GHz (HFET-1102) 1.5 dB Typical a HIGH GAIN 16 dB Typical at 4 GHz HIGH OUTPUT POWER


    OCR Scan     		2n6680hfet-1101hfet-1102transistor noise figure measurements+6hewlett-packard application note 970et110214cl 40d5880application note hewlett-packard 970line amplifier satellite PDF

    AN-G005

    Abstract: transistor 1248 Toko inductor 20211 transistor tt 2206 transistor w1a 94 transistor rf m 9860 ST 9343 transistor bd 9262 ef Toko 20211 LT 7202
    Contextual Info: r m HEW LETT mL'/LM P A C K A R D Low N oise and M oderate P ow er A m plifiers U sin g th e ATF-21186 Application Note 1064 In tro d u c tio n This application note describes the use of a low cost Gallium Arsenide Field Effect T ransistor GaAs FET designed specifically


    OCR Scan     		atf-21186device405962-6875ean-g005+9transistor 1248toko inductor 20211transistor tt 2206transistor w1a 94transistor rf m 9860st 9343 transistorbd 9262 eftoko 20211lt 7202 PDF

    phemt biasing ATF-36077

    Abstract: atf-36077 low noise design ATF 10136 microstripline ATF-10136 ATF36077 thickness of microstripline AN-G004 D5880 amplifier lna low noise amplifier s-band
    Contextual Info: Low Noise Amplifier for 2.3 GHz using the ATF-36077 Low Noise PHEMT Application Note 1129 Introduction Design The Avago Technologies ATF-36077 PHEMT device is described in a low noise amplifier for 2.3 GHz. The ATF36077 is characterized for use as a low noise amplifier in


    Original     		atf-36077atf36077an-g004atf-10136+10atf-132845091-9311e59643854e5966-0782ephemt biasing atf-36077low noise design atf 10136microstriplinethickness of microstriplined5880amplifier lna low noise amplifier s-band PDF

    phemt biasing ATF-36077

    Abstract: D5880 AN-G004 microstripline ATF-10136 ATF-36077 low noise design ATF 10136 agilent atf10136 ATF13284 ATF36077
    Contextual Info: Low Noise Amplifier for 2.3 GHz using the ATF-36077 Low Noise PHEMT Application Note 1129 Introduction The Agilent Technologies ATF36077 PHEMT device is described in a low noise amplifier for 2.3 GHz. The ATF-36077 is characterized for use as a low noise amplifier in 12 GHz DBS


    Original     		atf-36077atf36077an-g004atf-10136+9atf132845091-9311e5964-3854e5966-0782ephemt biasing atf-36077d5880microstriplinelow noise design atf 10136agilent atf10136 PDF

    phemt biasing ATF-36077

    Abstract: ATF-13284 5964-3854E D5880 amplifier lna low noise amplifier s-band ATF-36077 low noise design ATF 10136
    Contextual Info: Low Noise Amplifier for 2.3 GHz using the ATF-36077 Low Noise PHEMT Application Note 1129 Introduction The Hewlett-Packard ATF-36077 PHEMT device is described in a low noise amplifier for 2.3 GHz. The ATF-36077 is characterized for use as a low noise amplifier in


    Original     		atf-36077an-g004atf-10136atf13284+85091-9311e5964-3854e5966-0782ephemt biasing atf-36077atf-13284d5880amplifier lna low noise amplifier s-bandlow noise design atf 10136 PDF