14CL 40
Abstract: ET1102 et 1102 HFET-1101 HFET-1102 2N6680 HPAC-100A HFET1102 14cl ET 2314
Contextual Info: NEW 2N6680 H E W L E T T PACKARD HFET-1101 HFET-1102 MICROWAVE GaAS FETS GaAs FETs COMPONENTS Features LOW NOISE FIGURE 1.6 dB Typical at 4 GHz (2N6680) 1.7 dB Maximum at 4 GHz (HFET-1102) 1.5 dB Typical HIGH GAIN 16 dB Typical at 4 GHz a HIGH OUTPUT POWER
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2n6680hfet-1101hfet-110214cl 40+6et1102et 1102hpac-100ahfet110214clet 2314
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TRANSISTOR noise figure measurements
Abstract: Hewlett-Packard application note 970 et1102 14CL 40 HFET-1101 HFET-1102 2N6680 D5880 application note Hewlett-Packard 970 line AMPLIFIER satellite
Contextual Info: NEW H E W L E T T P A C KARD 2N6680 HFET-1101 HFET-1102 MICROWAVE GaAS FETS GaAs FETs COMPONENTS Features LOW NOISE FIGURE 1.6 dB Typical at 4 GHz (2N6680) 1.7 dB Maximum at 4 GHz (HFET-1102) 1.5 dB Typical a HIGH GAIN 16 dB Typical at 4 GHz HIGH OUTPUT POWER
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2n6680hfet-1101hfet-1102transistor noise figure measurements+6hewlett-packard application note 970et110214cl 40d5880application note hewlett-packard 970line amplifier satellite
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HFET-1101
Abstract: HP 1102 HPAC-100A 2N6680 b836 HFET-1102 TXVBF-1102 TXVF-1102 HFET1102 GM 1101
Contextual Info: H E W L E T T PACKARD COM PON EN TS HIGH RELIABILITY MICROWAVE GaAS FETS 2N6680 TXV 2N6680 TXVB TXVF-1102 TXVBF-1102 D e s c r ip t io n Hewlett-Packard is capable of executing alternative programs based upon individual customer’s specifi cations. TA B LE I
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2n6680txvf-1102txvbf-1102hfet-1101+6hfet-1102hp 1102hpac-100ab836hfet1102gm 1101
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VN88AF
Abstract: VN89AF VN66AD VN67AD VN88AF SILICONIX VN46AF VN66AF 2N6657 VN0401D IRF622
Contextual Info: Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150
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irf640irf642irf630irf632+15irf620irf622vn1706dirf641irf643irf631vn88afvn89afvn66advn67advn88af siliconixvn46afvn66af2n6657vn0401d
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mospower cross vn66af
Abstract: VN88AF CROSS REFERENCE VN99AB OLS 049 2SJ54 sony IRF542 2N6658 CROSS REFERENCE 2n6661 VN0209N2 VN88
Contextual Info: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170
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o-220vn1000dirf522vn1000a+13irf540irf632irf640mospower cross vn66afvn88afcross reference vn99abols 0492sj54 sonyirf5422n6658cross reference 2n6661vn0209n2vn88
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VN99AB
Abstract: VN66AF 2N6658 VN46AF IRF620 IRF622 IRF630 IRF631 IRF632 IRF633
Contextual Info: Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150 150
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irf640irf642irf630irf632+11irf620irf622vn1706dirf641irf643irf631vn99abvn66af2n6658vn46afirf633
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2N6658
Abstract: VN66AF siliconix VN10KM VN89AF VN88AF 2n6657 2N6656 VN67 VN80AF VN89AD
Contextual Info: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdow n V olta ge (Volts) 60 60 • d C on tin u ou s (Amps) Power D issipation (Watts) . Part Num ber 0.2 0.2 0.315 0.315 VN10KE VN10LE 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0
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vn10kevn10leto-52vn2406m+16vn2410mvw1706mvn1710mvn1206mvn1210mvn0808m2n6658vn66afsiliconix vn10kmvn89afvn88af2n66572n6656vn67vn80afvn89ad
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NE24483
Abstract: AF367 NE38883 BFT93R NE13783, ATF-10135 BFT92R BF936 CFX21 to119
Contextual Info: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Po Manufacturer Max W V(BR)CBO (V) fose Max (Hz) Gp Po N.F. (dB) (W) (dB) at fTeat (Hz) Ie Max (A) TOpe, Mati. Max (OC) Package Style UHF/Microwav Transistors, Bipolar NPN (Co nt' d) S01543 ThmsnCSFEFC
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s01543af367af280s2n2999+152n24152n24162sa1245bfq24ne59333bfq52ne24483ne38883bft93rne13783atf-10135bft92rbf936cfx21to119
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2N6658
Abstract: 2N6656 1rf820 VN64GA 2N6657 inverter irf840 IRF120 IRF122 IRF130 IRF132
Contextual Info: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) rDS(on) (Ohms) >d Continuous (Amps) Power Dissipation (Watts) 100 100 100 100 100 100 100 100 100 100 90 90
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irf150irf152irf140irf142+12vn1000airf130vn1001airf132irf120irf1222n66582n66561rf820vn64ga2n6657inverter irf840
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2N6658
Abstract: VN66AF IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641
Contextual Info: Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150 150
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irf640irf642irf630irf632+9irf620irf622vn1706dirf641irf643irf6312n6658vn66afirf633
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VN66AF equivalent
Abstract: VN67AF equivalent mospower cross vn66af VN66AF 2N6658 IRF540 irf540 equivalent irf540 TTL VN67AF VN88AD
Contextual Info: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170
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o-220vn1000dirf522vn1000a+12irf540irf632irf640vn66af equivalentvn67af equivalentmospower cross vn66afvn66af2n6658irf540 equivalentirf540 ttlvn67afvn88ad
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VN66AF
Abstract: VN67AF VN46AF vn89af VN88AF 2N6658 IN400 VN46 IRF620 IRF630
Contextual Info: Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150 150
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irf640irf642irf630irf632+14irf620irf622vn1706dirf641irf643irf631vn66afvn67afvn46afvn89afvn88af2n6658in400vn46
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irf542 equivalent
Abstract: 2N6658 equivalent IRF640 FI IRF540 irf540 equivalent VN0108N2 2N865 CROSS REFERENCE 2n6661 VN46 IRF232
Contextual Info: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170
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o-220vn1000dirf522vn1000a+12irf540irf632irf640irf542 equivalent2n6658equivalent irf640 fiirf540 equivalentvn0108n22n865cross reference 2n6661vn46irf232
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VN88AD
Abstract: VN66AF 2N6658 VN89AF VN0808M VN88AO siliconix VN10KM VN46AF BSR67 VN89AD
Contextual Info: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdow n V olta ge (Volts) 60 60 • d C on tin u ou s (Amps) Power D issipation (Watts) . Part Num ber 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35 0.4 0.3
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vn10kevn10leto-52vn2406m+15vn2410mvw1706mvn1710mvn1206mvn1210mvn0808mvn88advn66af2n6658vn89afvn88aosiliconix vn10kmvn46afbsr67vn89ad
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VN46AF
Abstract: VN66AF 2N6658 VN89AF VN67AF VN88 2N6657 VN66AD IRF620 IRF630
Contextual Info: Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150 150
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irf640irf642irf630irf632+14irf620irf622vn1706dirf641irf643irf631vn46afvn66af2n6658vn89afvn67afvn882n6657vn66ad
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mospower cross vn66af
Abstract: VN66AF equivalent 2N6658 IRF540 2SJ54 BUZ44 irf540 equivalent VN0400 BUZ24 IRF232
Contextual Info: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170
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o-220vn1000dirf522vn1000a+12irf540irf632irf640mospower cross vn66afvn66af equivalent2n66582sj54buz44irf540 equivalentvn0400buz24irf232
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VN90AB
Abstract: 2N6658 VN67AF equivalent 2n6659 equivalent 2SK173 BUZ 20 BUZ33 VN46AF equivalent VN67AF cross reference IRF240
Contextual Info: Siliconix 1-1? f l Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170
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o-220vn1000dirf522vn1000a+13irf540irf632irf640vn90ab2n6658vn67af equivalent2n6659 equivalent2sk173buz 20buz33vn46af equivalentvn67af cross referenceirf240
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2N6657 data sheet
Abstract: 2N6657 2N6658 sony 2sj54 IRF540 VN64GA irf740 pinout 2N6656 8G6 data sheet BUZ44
Contextual Info: Siliconix 1-1? f l MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) rDS(on) (Ohms) >d Continuous (Amps) Power Dissipation (Watts) 100 100 100 100 100 100 100
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o-220vn1000dirf522vn1000a+12irf540irf632irf6402n6657 data sheet2n66572n6658sony 2sj54vn64gairf740 pinout2n66568g6 data sheetbuz44
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IRF620
Abstract: IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642 IRF643
Contextual Info: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150
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irf640irf642irf630irf632+7irf620irf622vn1706dirf641irf643irf631irf633
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BUZ44
Abstract: 2N6658 IRF232 IRF240 IRF422 IRF522 IRF540 IRF632 IRF640 IRF822
Contextual Info: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170
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o-220vn1000dirf522vn1000a+9irf540irf632irf640buz442n6658irf232irf240irf422irf822
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2N6658
Abstract: IRF631 VN46 VN46AF VN66AF LD1A IRFF121 ssi 12e VN0600D IRF620
Contextual Info: Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150
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irf640irf642irf630irf632+14irf620irf622vn1706dirf641irf643irf6312n6658vn46vn46afvn66afld1airff121ssi 12evn0600d
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2N6657
Abstract: 2N6658 VN66AF VN67AA 2N6656 VN64GA VN88AF VN-99-A 2N6657 siliconix IRF120
Contextual Info: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) 100 100 100 100 100 100 100 100 100 100 90 90 90 8CI 80 60 6Cl 60 60 60 60 60 60 60 60 60 60 60 40 40 35 35
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irf150irf152irf140irf142+15vn1000airf130vn1001airf132irf120irf1222n66572n6658vn66afvn67aa2n6656vn64gavn88afvn-99-a2n6657 siliconix
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VN66AF equivalent
Abstract: sony 2sj54 2N6658 buz 350 equivalent CROSS REFERENCE VN99AB VN66AF vn99ab VN0108N2 VN46AF IRF232
Contextual Info: Siliconix 1-1? f l oa < 2N6661 • VN99AB ■ VN90AB B S ilic o n ix 90V MOSPOWER These pow er F E T s are design ed e sp e c ia lly for low pow er high frequency inverters, interface to C M O S and TTL logic, and line drivers. FEATURES liw v K1ÄÄÄ4 I ■
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o-220vn1000dirf522vn1000a+13irf540irf632irf640vn66af equivalentsony 2sj542n6658buz 350 equivalentcross reference vn99abvn66afvn99abvn0108n2vn46afirf232
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VN88AD
Abstract: 2N6658 VN88 IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640
Contextual Info: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150 150
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irf640irf642irf630irf632+10irf620irf622vn1706dirf641irf643irf631vn88ad2n6658vn88irf633
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