ATF13284 Search Results

Contextual Info: ATF13284 Transistors N-Channel UHF/Microwave MESFET V BR DSS (V)5 V(BR)GSS (V)-4 I(D) Max. (A)100m P(D) Max. (W)225m Maximum Operating Temp (øC)175õ I(DSS) Min. (A)20m I(DSS) Max. (A)100m @V(DS) (V) (Test Condition)2.5 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.25m

ATF-13284-STR

Abstract: ATF-13284 ATF-13284-TR1 ATF-13284-TR2 FW50 IS21I2
Contextual Info: ATF-13284 1-16 GHz Low Noise G allium Arsenide FET H E W LE T T PACKARD ^ 84 Plastic Package Feature« • Low Nolee Figure: 0.7 dB typical at 4 GHz • High Associated Gain: 15.0 dB typical at 4 GHz • High Output Power: 18.0 dBm typical Pi dB at 4 GHz • Low Cost I

2SC3355 SPICE MODEL

Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness

Toko inductor 20211

Abstract: AMP2300 Transistor S 40443 AN-G005 ATF-21186 Toko 20211 low noise design ATF 10136 INA-02184 LTC1044CS8 MSA-0686
Contextual Info: Low Noise and Moderate Power Amplifiers Using the ATF-21186 Application Note 1064 Introduction This application note describes the use of a low cost Gallium Arsenide Field Effect Transistor GaAs FET designed specifically for the VHF through 2500 MHz frequency range. The Agilent

ATF-13284

Contextual Info: HE ULE TT-PACKARD/ CUPNTS m blE ]> H EW LETT PACKARD • OOtHflTÖ 740 M H P A f T c ' X Ï 8? w • If1 .GHz Low Noise Gallium Arsenide FET 84 Plastic Package Features • • Low Noise Figure: 0.7 dB typical at 4 GHz High Associated Gain: 15.0 dB typical at 4 GHz

HRMA-0470B

Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
Contextual Info: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic

AN-G005

Abstract: transistor 1248 Toko inductor 20211 transistor tt 2206 transistor w1a 94 transistor rf m 9860 ST 9343 transistor bd 9262 ef Toko 20211 LT 7202
Contextual Info: r m HEW LETT mL'/LM P A C K A R D Low N oise and M oderate P ow er A m plifiers U sin g th e ATF-21186 Application Note 1064 In tro d u c tio n This application note describes the use of a low cost Gallium Arsenide Field Effect T ransistor GaAs FET designed specifically

phemt biasing ATF-36077

Abstract: atf-36077 low noise design ATF 10136 microstripline ATF-10136 ATF36077 thickness of microstripline AN-G004 D5880 amplifier lna low noise amplifier s-band
Contextual Info: Low Noise Amplifier for 2.3 GHz using the ATF-36077 Low Noise PHEMT Application Note 1129 Introduction Design The Avago Technologies ATF-36077 PHEMT device is described in a low noise amplifier for 2.3 GHz. The ATF36077 is characterized for use as a low noise amplifier in

AVANTEK transistor

Abstract: ATF 13284 AVANTEK
Contextual Info: AVANTEK Q INC EGE avantek îm n b b D ooobsso 4 ATF-13284 1*16 GHz Low Noise Gallium Arsenide FET ~T-Z\~Z.£ Avantek 84 Plastic Package Features • • • • • Low Noise Figure: 0.7 dB typical at 4 GHz High Associated Gain: 15.0 dB typical at 4 GHz High Output Power: 18.0 dBm typical Pi dB

ATF-13284

Abstract: ATF-13284-STR ATF-13284-TR1 ATF-13284-TR2 IS21I2
Contextual Info: w w w . D a ta s h e e t. i n H EW LETT PACKARD f T c ' X Ï 8? w • If1 .GHz Low Noise Gallium Arsenide FET 84 Plastic Package Features • • • Low Noise Figure: 0.7 dB typical at 4 GHz High Associated Gain: 15.0 dB typical at 4 GHz High Output Power: 18.0 dBm typical Pi dB

ATF-13484

Abstract: atf 36163 Low Noise Amplifier low noise design ATF 10136 A008 amplifier TRANSISTOR amplifier TRANSISTOR 12 GHZ ATF pHEMT ATF13484 A007 transistor atf Microwave GaAs FET catalogue
Contextual Info: Application Information The following application information is either published in this catalog or available from your local Hewlett-Packard sales office, authorized distributor, or representative. Technical information is also available on the WWW at: www.hp.com/go/rf

marking IAM transistor sot-23

Abstract: ATF-13170 transistor MARKING IAM IAM-XXX08 IAM-81008 HSMP 30XX HSMP 30XX ATF HSMS-282X HSMS-820X JESD22
Contextual Info: Quality Assurance Concepts and␣ Methodology Semiconductor Devices and Hybrid␣ Assemblies Reliability/Quality Philosophy Recognizing the increasing importance of microwave component reliability for the consumer, industrial, and military markets, the Components Group

Contextual Info: ¥ho% mL'fíMPHEWLETT a c k a rd ATF-13284 1-16 GHz Low Noise Gallium Arsenide FET 84 Plastic Package Features • • • Low Noise Figure: 0.7 dB typical at 4 GHz High Associated Gain: 15.0 dB typical at 4 GHz High Output Power: 18.0 dBm typical Pi dB at 4 GHz

phemt biasing ATF-36077

Abstract: D5880 AN-G004 microstripline ATF-10136 ATF-36077 low noise design ATF 10136 agilent atf10136 ATF13284 ATF36077
Contextual Info: Low Noise Amplifier for 2.3 GHz using the ATF-36077 Low Noise PHEMT Application Note 1129 Introduction The Agilent Technologies ATF36077 PHEMT device is described in a low noise amplifier for 2.3 GHz. The ATF-36077 is characterized for use as a low noise amplifier in 12 GHz DBS

ATF-35176

Abstract: ina10386 lnb downconverter schematic diagram ATF-35576 ATF35176 INA-10386 AN-A008 micro-X ceramic Package lna fet ATF13036 LNB down converter for Ku band
Contextual Info: Direct Broadcast Satellite Systems Application Note A009 NOTE: This publication is a reprint of a previously published Application Note and is for technical reference only. For more current information, see the following publications: • AN1091, 1 and 2 Stage 10.7 to 12.7 GHz Amplifiers Using the

phemt biasing ATF-36077

Abstract: ATF-13284 5964-3854E D5880 amplifier lna low noise amplifier s-band ATF-36077 low noise design ATF 10136
Contextual Info: Low Noise Amplifier for 2.3 GHz using the ATF-36077 Low Noise PHEMT Application Note 1129 Introduction The Hewlett-Packard ATF-36077 PHEMT device is described in a low noise amplifier for 2.3 GHz. The ATF-36077 is characterized for use as a low noise amplifier in

ATF-35176

Abstract: ATF-3507 ATF-35076 ATF-21170 ATF-44100 ATF26550 ATF-13036 ATF-10170 ATF-35576 ATF-35376
Contextual Info: Gallium Arsenide GaAs Field Effect Transistors (FETs) Low Noise GaAs FETs (Typical Specifications at +25°C Case Temperature) Part Number Gate Width Optimum Freq. Range (GHz) Test Freq. (GHz) NF. (dB) (dB) PldB (dBm) 0.5-12 2-18 0.5-6 0.5-10 4 12 4 4 0.5