LP801 Search Results

Contextual Info: a s u s LP801 • LP812series . /'vy^r— v SMD Top View Package FEATU R ES O P T IC A L C H A R A C T E R IS T IC S ftftDV] a *e S m a ll SM D P a c k a g e » G ift Em itted Color 120deg L P 8 0 1 V ie w in g A n g le 1 2 0 d e g 115deg ( L P 8 1 2 )

TB203

Abstract: LP801
Contextual Info: Gain vs. Freq TB203 LP801 Vds=28Vdc Idq=0.5A 20 Gain in dB 15 Gain 10 Pout fixed at 17dBm 5 470 490 510 530 550 570 590 610 630 650 670 690 710 730 750 770 Freq in MHz Gain vs. Freq TB203 LP801 Vds=28Vdc Idq=1A 20 Gain in dB 15 Gain 10 Pout fixed at 17dBm

TB228

Abstract: c12 ph zener diode ph c15 zener c10 ph zener zener diode c16 ph
Contextual Info: March 6, 2014 TB228 Frequency=20-1000MHz Pout=1W Gain=13dB avg. Vds=28Vdc Idq=0.8A LP801 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com March 6, 2014 PH:(805)484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012

LP801

Contextual Info: polyfet rf devices LP801 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

TB231

Contextual Info: March 19, 2014 TB231 Frequency=100-470MHz Pout=10W Gain=13dB avg. Vds=28Vdc Idq=0.2A LP801 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com March 19, 2014 PH:(805)484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012

TB227

Abstract: LP801
Contextual Info: November 21, 2013 TB227 Frequency=10-100MHz Pout=10W Gain=13dB Vds=28Vdc Idq=0.2A Efficiency=55% Typical LP801 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com November 21, 2013 PH:(805)484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012

Contextual Info: polyfet rf devices LP801 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

LP801

Contextual Info: LP801 • LP812series . SMD Top View Package FEATU R ES O P T IC A L C H A R A C T E R IS T IC S ftftDV] a*e S m a ll SM D P a c k a g e » G ift Em itted Color 120deg L P 8 0 1 V ie w in g A n g le 1 2 0 d e g 115deg (L P 8 1 2 ) I I n d ic a t o r s mm

TB217

Abstract: PORCELAIN
Contextual Info: May 16, 2012 TB217#3 Frequency=30-512MHz Pout=10W Gain=10dB Vds=28Vdc Idq=0.2A Efficiency=30 to 55% LP801 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com May 16, 2012 TB217#3 Gain/Efficiency vs Frequency: Vds=28Vdc, Idq=0.2A, Pout=10W

LP801

Contextual Info: polyfet rf devices LP801 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

TB241

Contextual Info: Decem mber 3, 20144 T TB241 Frequenccy=1.5-1200MHz Poout=10W Gaain=16dB Vd ds=24Vdc Id dq=0.6A Efficciency=43% % LP801 PH: 8805 484-4210 FAX:(805)48 84-3393 1110 Avenida Acasso, Camarillo CA C 93012 ww ww.polyfet.com m December 3, 2014 TB241 P1dB/P3dB vs Freq: Vds = 24Vdc, Idq = 0.6A

B-3067

Abstract: ddc b-3067 TST 9007 TST-9017 TST-9002 LP-8018 TR 25679 TST-9000 Series Twin Stacked LM 9014 c TST-9007
Contextual Info: QQQ ILC DATA DEVICE CORPORATION*_ PULSE TRANSFORMERS MIL-STD-1553 TRANSFORMERS FEATURES DESCRIPTION AND APPLICATIONS • The military data bus specification, MIL-STD-1553, has brought about the need for versatile pulse transformers that meet all the electrical

LP801

Abstract: YCL isolation LP801-12S03 LP801-24S03 LP801-48S03
Contextual Info: 25 watts /3"x2.60"×0.45" Package LP 3.3V output series Feature: l l l l l l l YCL Low Cost 2:1 input range High efficiency Industry-standard package and pinout 500Vdc Input/Output Isolation On/0ff control and Vout trim 3.3V low voltage output Specifications: At 25°C

Contextual Info: MTT 2001 Vdmos vs. LDMOS How to Choose Polyfet Rf Devices S. K. Leong Tuesday, May 22, 2001 1 Vdmos vs Ldmos • Technology - Process Structure Differences. • DC Characteristics • RF Characteristics – Gain, Stability, Ruggedness • Applications – HF, VHF, Low UHF, High UHF, PCS

DTM180AA

Abstract: DT-408 STD8018A LP05018 LS1012 DTM180AB
Contextual Info: ZERO-BIAS SCHOTTKY DIODE DETECTORS 100 KHz - 50 GHz FEATURES • No Bias Required • Matched Input for Excellent VSWR* • Extremely Flat Frequency Response* • Very High Sensitivity DZ Series * (DZR & DZM Series) APPLICATIONS ENVIRONMENTAL RATINGS

Contextual Info: LONG STROKE LINEAR POTENTIOMETERS FOR DISPLACEMENT MEASUREMENT Shown with DP-41-E Meter, $545 See Section D Dimensions in mm in SHAFT EXTENSION, FOR USE w/ 6.00 mm (0.24") SHAFT 1/4 - 28 NF-2A THREAD 11 mm (7/16")ACROSS FLATS TYPICAL 6.4 mm (1/4") ACROSS FLATS