AG01 Search Results

Contextual Info: DX21TFAG02 • AG01 Terminal Conversion 1. Dimension & Terminal Configuration T L ⑤ ① ② Low Band Dimension mm ④ Port1_ANT W ⑥ 3. Frequency Characteristics L 2.00 ± 0.15 W 1.25 ± 0.15 T 0.95 ± 0.15 Port2_ Low S22 Terminal ③ S21 -10 -20 Common

C102 M

Abstract: c102 diode c102 CLA65 c 102 C-102-A C-102-B CLA65AA clairex C102B
Contextual Info: 40E D 34=n?3fl aG0124fl 4 S E N I FASCO INDS/ SENISYS Features Absolute M axim um Ratings Ta = 25°C unless otherwise stated. • • • • • Storage and Operating to + 100*0

oneDRAM

Abstract: 133MHz 640M 111MHz KJXX
Contextual Info: One-DRAMTM Code Information 1/2 Last Updated : August 2009 KJXXXXXXXX - XXXXXXX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 12. Package (AG01000 PKG SPEC Reference) A : FBGA (Lead-Free, Halogen-Free) S : FBGA (Lead-Free) 1. Memory (K) 2. OneDRAMTM : J 13. Temp, Power

AG01Y-AG01

Contextual Info: AG01Y-AG01A High Efficiency Rectifiers VOLTAGE RANGE: 70- 600 V CURRENT: 0.5-1.0 A DO-41 Features Low cost Diffused junction Low leakage Low forward voltage drop High crrent capability Easily cleaned with freon, alcohol, lsopropand and similar solvents

AG01

Abstract: AG01Z
Contextual Info: AG01Z - AG01 ULTRA FAST RECOVERY RECTIFIER DIODES PRV : 200 - 400 Volts Io : 0.7 Ampere DO - 41 FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency

fp1102

Abstract: M32R RTD MSD-32170-AG01-B0009 PSC02 525CS fd110 M32R mitsubishi
Contextual Info: 技術がつくる高度なふれあい SOCIO-TECH MSD-32170-AG01-B0009 三菱32 ビットRISC シングルチップマイクロコンピュータ M32R ファミリ M32R/E シリーズ 32170/32171 グ ル ー プ アプリケーションノート 参考プログラム集

AG01A

Contextual Info: SANKEN ELECTRIC CO., LTD. AG01A 1. Scope The present specifications shall apply to Sanken silicon rectifier diode, AG01A. 2. Outline Type Silicon Rectifier Diode Mesa type Structure Resin Molded Applications High Frequency Rectification, etc. 3. Flammability

Contextual Info: Index Type No. order Type No. Division Page AG01 Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01A Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01Y Ultra-Fast-Recovery Rectifier Diodes (Axial) AG01Z AK 03 Division Page Division Page EK 19 Schottky Barrier Diodes (Axial)

AG01

Contextual Info: SANKEN ELECTRIC CO., LTD. AG01 １ Scope The present specifications shall apply to an AG01. ２ Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification ３ Flammability UL94V-0 Equivalent 040512 1／5 61426-01 SANKEN ELECTRIC CO., LTD.

EBW-PK23-P010L2-3Z

Abstract: block diagram of paper scanner circuits barcode scanner Scanner CMOS imaging sensors barcode sensor led for CIS scanner EBW-PK23 Contact Image Sensor
Contextual Info: NOM02A4-AG01G 200DPI Contact Image Sensor Module Description The NOM02A4−AG01G contact image sensor CIS module integrates a green LED light source, lens and image sensor in a compact housing. The module is designed for document scanning, mark reading, gaming and office automation equipment applications

Contextual Info: Ultra-Fast-Recovery Rectifier Diodes Electrical Characteristics（Ta＝25℃） Absolute Maximum Ratings Parameter I F（ AV） （A） VRM （V） Type No. AG01Y 70 AG01Z 200 AG01 400 AG01A 600 EG01Y 70 EG01Z 200 EG01 400 EG01A 600 IFSM （A） Tstg Tj （℃） （℃）

AG01A

Abstract: AG01 AG01Y AG01Z EG01 EG01A EG01Y EG01Z
Contextual Info: Ultra-Fast-Recovery Rectifier Diodes Electrical Characteristics Ta = 25°C t rr ➁ t rr ➀ (ns) (ns) Absolute Maximum Ratings Parameter VRM (V) Type No. IFSM (A) I F (AV) (A) AG01Y 70 AG01Z 200 AG01 400 AG01A 600 Tj (°C) Tstg (°C) VF (V) 50Hz Half-cycle Sinewave

AG01A

Contextual Info: AG01A ULTRA FAST RECOVERY RECTIFIER DIODE PRV : 600 Volts Io : 0.5 Ampere DO - 41 FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency

fmgg2c

Abstract: 10zrl RG10Z FMX-G16S fmng12 FMX-G26S FMCG28 FMXG16S fmxg16 FMPG12
Contextual Info: Ultra-Fast Recovery Rectifier Diodes 4-3 4-3-1 Part No. 1 Chip VRM IF IFSM trrq trrw V (A) (A) (nS) (nS) 25 100 50 Axial(A0) 3 EG01A 30 100 50 Axial(E0) 4 AG01A 30 100 50 Axial(E1) 5 EG 1A 50 100 50 Axial(R1) 6 RG 10A 50 100 50 Axial(R2) 7 RG 2A AG01Y 1.0

AG01Z

Abstract: AG01A AG01 AG01Y
Contextual Info: BL GALAXY ELECTRICAL AG01Y Z - AG01A(Z) VOLTAGE RANGE: 70- 600 V CURRENT: 0.5-1.0 A HIGH EFFICIENCY RECTIFIERS FEATURES DO - 41 Low cost Diffused junction Low leakage Low forward voltage drop High crrent capability Easily cleaned with freon, alcohol, lsopropand

C2M100-28

Abstract: C2M-100-28 25CC UMIL100 UMIL60 Scans-00115694
Contextual Info: 0182998 ACRI AN INC jjfTJoifl 2 ^ 0 aG01212 ñ ^~D T-33-15 AN UMIL100 GENERAL DESCRIPTION 100 WATTS - 28 VOLTS 225-400 MHz The UMIL100 is a double input matched broadband transistor specifically intended for use in the 225-400MHz frequency band. It may be operated in Class A, AB, or C.

Contextual Info: NOM02A4-AG01G 200DPI Contact Image Sensor Module Description The NOM02A4−AG01G contact image sensor CIS module integrates a green LED light source, lens and image sensor in a compact housing. The module is designed for document scanning, mark reading, gaming and office automation equipment applications

Contextual Info: CASCADABLE SMALL SIZE LOW CURRENT .068 .035 hu FT CASE IS GROUND Pacific Monolithics’ PM-AG0101-A is a. GaAs MMIC gain-control amplifier designed for applications from 20 to 1000 MHz. However, with some gain-control reduction, frequency can be extended to 1500 MHz. The effective gain control is 20 dB, using an input negative

package tsop1

Abstract: 16G nand AG01000 NCE 6G memory 4g onenand
Contextual Info: One-NAND Code Information 1/2 Last Updated : August 2009 KFXXXXXXXX - XXXXXXX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 12. Package (AG01000 PKG SPEC Reference) A : FBGA (Lead-Free, Halogen-Free) B : FBGA (Lead-Free, Halogen-Free, OSP) D : FBGA (Lead-Free)

EG01A V1

Abstract: CTB-34S
Contextual Info: Í SANKEN ELECTRI C U S A h e í I v ì i o ? 1 ! uüonaiä o | Ultra High Speed Rectifier Diodes • V rm:7 0 ~ 1 0 0 0 V ■ io :0 .5 ~ i.5 A T* —i* AG/AL/EGs.,«/EL/RG Absolute Maximum Rating Type No. AG01Y AG01Z AG01 AG01A AL01Y AL01Z EG01Y EG01Z EG01

M32102S6FP

Abstract: MFT4 H00FFFFFF H 233 BPC CC32R M32102
Contextual Info: MSD-M32102-AG01-011023 三菱32ビットRISCシングルチップマイクロコンピュータ M32Rファミリ ／ M32R/Eシリーズ 32102 グ ル ー プ プログラミングマニュアル 本資料ご利用に関しての注意 ・記載事項につきましては予告なく変更されることがあります。

Contextual Info: AG01Z - AG01 ULTRA FAST RECOVERY RECTIFIER DIODES PRV : 200 - 400 Volts Io : 0.7 Ampere DO - 41 FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency

dSMC

Abstract: WinChip-2 Phoenix BIOS manual f.34 cyrix Cyrix 6x86mx AK-02 diode T35 12H P54C P55C TR12
Contextual Info: Preliminary Information PROCESSOR Data Sheet Preliminary Information April 1999 IDT WINCHIPTM 3 PROCESSOR DATA SHEET This is Version 0.9 of the IDT WinChip 3 Processor data sheet. The latest versions of this data sheet may be obtained from www.winchip.com

UltraSPARC-IIIi

Abstract: NVRAM for Sun UltraSparc IIi UltraSPARC-III STP2003QFP 4900 H02 gigabyte MOTHERBOARD CIRCUIT diagram A27 639 SME2411 SME1430LGA-360 SME1430LGA-440
Contextual Info: SME1430LGA-360 SME1430LGA-440 SME1430LGA-480 May 1999 UltraSPARC -IIi CPU DATA SHEET Highly Integrated 64-Bit RISC; L2-Cache, DRAM, PCI Interfaces DESCRIPTION The SME1430LGA CPU UltraSPARC-IIi microprocessor is a highly-integrated, 64-bit, SPARC V9 superscalar