EG01Z Search Results

EG01

Abstract: EG01Z
Contextual Info: EG01 - EG01Z ULTRA FAST RECOVERY RECTIFIER DIODES PRV : 200 - 400 Volts Io : 0.7 Ampere DO - 41 FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency

EG01A

Abstract: EG01Z
Contextual Info: SIYU R EG01Z / EG01 / EG01A / EG01C 塑封超快速整流二极管 Plastic Ultra-Fast Recover Rectifiers 反向电压 200 - 1000V 正向电流 0.5 - 0.7A Reverse Voltage 200 to 1000V Forward Current 0.5 to 0.7A 特征 Features DO-41 •反向漏电流低 Low reverse leakage

EG01Z

Contextual Info: SIYU R EG01Z / EG01 / EG01A / EG01C 塑封超快速整流二极管 Plastic Ultra-Fast Recover Rectifiers 反向电压 200 - 1000V 正向电流 0.5 - 0.7A Reverse Voltage 200 to 1000V Forward Current 0.5 to 0.7A 特征 Features DO-41 ・低的反向漏电流 Low reverse leakage

Contextual Info: EG01 - EG01Z ULTRA FAST RECOVERY RECTIFIER DIODES PRV : 200 - 400 Volts Io : 0.7 Ampere DO - 41 FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency

Contextual Info: Ultra-Fast-Recovery Rectifier Diodes Electrical Characteristics（Ta＝25℃） Absolute Maximum Ratings Parameter I F（ AV） （A） VRM （V） Type No. AG01Y 70 AG01Z 200 AG01 400 AG01A 600 EG01Y 70 EG01Z 200 EG01 400 EG01A 600 IFSM （A） Tstg Tj （℃） （℃）

EG01C

Abstract: EG01Z EG01 EG01A
Contextual Info: SIYU R EG01Z . EG01C Ultra-Fast Recovery Rectifier Reverse Voltage 200 to 1000 V Forward Current 0.5 to 0.7 A DO-41 Features 1.0 25.4 MIN .034(0.9) DIA .028(0.7) . Low reverse leakage . High forward surge capability . High temperature soldering guaranteed:

EG-01A

Contextual Info: SIYU R EG01Z / EG01 / EG01A / EG01C 塑封超快速整流二极管 Plastic Ultra-Fast Recover Rectifiers 反向电压 200 - 1000V 正向电流 0.5 - 0.7A Reverse Voltage 200 to 1000V Forward Current 0.5 to 0.7A 特征 Features DO-41 •低的反向漏电流 Low reverse leakage

EG01A V1

Abstract: CTB-34S
Contextual Info: Í SANKEN ELECTRI C U S A h e í I v ì i o ? 1 ! uüonaiä o | Ultra High Speed Rectifier Diodes • V rm:7 0 ~ 1 0 0 0 V ■ io :0 .5 ~ i.5 A T* —i* AG/AL/EGs.,«/EL/RG Absolute Maximum Rating Type No. AG01Y AG01Z AG01 AG01A AL01Y AL01Z EG01Y EG01Z EG01

FMX-G12S

Abstract: FMP-G12S FMPG12S
Contextual Info: ULTRA-FAST-RECOVERY RECTIFIER DIODES Type No. V rm lo If s m V (A) (A) VF Ir Max. @ lF trr (mA) (ns) Type No. V rm lo If s m (V) (A) (A) 1.5 (A) 25 1.0 10nA 50 RG 2Y 70 SFPL-52 200 0.9 SFPL-62 200 1.0 RG 2Z 200 AL01Z 200 1.0 25 0.98 1.0 0.1 50 RG 2 400 1.2

MN638S

Abstract: STA464C sk 3001s relay Re 04501 spf0001 sta509a Schottky Diode 80V 6A 2SD2633 sk 5151s SLA2403M
Contextual Info: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein

AG01Y

Abstract: AL01Z AG01A AG01 AG01Z EG01Y EG01Z SPX-62S SPX-G32S
Contextual Info: Part Number IFSM A Tj (°C) 50Hz IF V = V V = V R RM R RM (A) max max t rr IF / I FP (mA) 2 (ns) IF / I FP (mA) Rth (j- ) Mass Fig. (°C/W) (g) No. 1.0 25 –40 to +150 1.2 1.0 100 0.5 100 100 100/100 50 100/200 22 0.13 1.0 30 –40 to +150 1.2 1.0 100 0.5

FMPG2F

Abstract: marking RBV - 401 3f series surface mount transistor FMXA-2202S RBV-406M SJPM-H4 FMV-3HU DIODE diode eu02 rectifier rbv-606 marking RBV
Contextual Info: Diodes 4 ○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○ Taping Specifications . 176 Application Note . 179

AG01A

Abstract: fml-g16s EG01A FMC-26U FMD-G26S FMG-G26S FMG-G36S FMN-G16S FMX-G16S FMX-G26S
Contextual Info: VRM V Package Part Number Surface Mount MP3-306 Axial 600 Frame-2Pin IFSM (A) 50Hz Half-cycle Sinewave Single Shot Tj (°C) Tstg (°C) VF (V) max IR (µA) IR (H) (mA) IF V = V V = V R RM R RM (A) max max t rr Ta (°C) 1 2 : I F / I R (=I F) 90% Recovery Point

str TV SMPS

Abstract: A6159 Sanken STR STR-A6159 STR-A6100 Application a6151 A6169 PC123 Series STR-A6151 STR-A6169
Contextual Info: w tt N Neew uucc d d o o PPrr STR-A6100 Series PRC, Auto Burst Standby, Current-Mode Control Low Power Off-line SMPS Primary Switcher Features ● PRC 〔Pulse Ratio Control〕: 8µs fixed off-time, variable on-time The switching frequency varies within an optimum range of 63kHz to 120kHz, according to load

Ao6100

Contextual Info: SAN KEN E L E C T R IC CO L T » 35 E Ultra Fast Recovery Diodes 1 H h T IR O T M l .0 0 0 0 4 1 3 T B S A K J T p & J -o V Vrm: 70~1000V B io :0.4~5.0A '¿7' SFPL/AG/AL/EG/EL/RG/RL Rating/ Characteristics Absolute Maximum Ratings V rsm V) V rm (V) If s M

SJPL

Contextual Info: 4-3 Ultrafast Recovery Diodes ●Surface-Mount VRM V 200 IF (AV) (A) Values in parentheses are for the products with heatsinks 0.9 1.0 1.0 2.0 1.5 1.5 Package Surface-Mount (SFP) Surface-Mount (SFP) Surface-Mount (SJP) Surface-Mount (SFP) Surface-Mount (SJP)

AG01Z

Abstract: AL01Z EG01Z EN01Z MP2-202S MPL-102S SFPL-52 SFPL-62 SFPX-62 SPX-62S
Contextual Info: VRM V Package Part Number I F (AV) (A) IFSM (A) 50Hz Half-cycle Sinewave Single Shot Tj (°C) Tstg (°C) VF (V) max IR (µA) IR (H) (mA) IF V = V V = V R RM R RM (A) max max t rr Ta (°C) t rr 1 t rr 2 : I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point)

rl2z

Abstract: E83S FMP-G12S 1Z200 marking ag01 AG01 AG01A AG01Y AG01Z EG01
Contextual Info: SANKEN E L E C T R IC CO LT » 35E 1 H T IR O T M l .0 0 0 0 4 1 3 T B S A K J T p & J -o V Ultra Fast Recovery Diodes h Vrm:70~1000V Bio:0.4~5.0A '¿7' SFPL/AG/AL/EG/EL/RG/RL R ating/ Characteristics Absolute Maximum Ratings Vrsm V) V rm (V) SFPL-52 SFPL-62

diode 8603

Abstract: SOT23 1Z FMV-3HU RM2C RN4Z General FBT UX-F5B 3gu diode diode RBV-406M Part marking
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41

str-a6159 dip8

Abstract: pc123 AC264V STRA6159 str TV SMPS A6151 STR-A6159 a6169 smps 10w 5V STR-A6169
Contextual Info: w tt N Neew uucc d d o o PPrr STR-A6100 Series PRC, Auto Burst Standby, Current-Mode Control Low Power Off-line SMPS Primary Switcher 特长 采用 PRC（Pulse Ratio Control）动作模式 OFF 时间 Toff = 8 S 固定，ON时间可调。 根据负载的变化，开关频率在63kHz 〜120kHz 的范围内变化。

10zrl

Contextual Info: VRM V Package Part Number I F (AV) (A) IFSM (A) 50Hz Half-cycle Sinewave Single Shot Tj (°C) Tstg (°C) VF (V) max IR (µA) IR (H) (mA) IF V = V V = V R RM R RM (A) max max t rr Ta (°C) t rr 1 t rr 2 : I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point)

1106S

Contextual Info: 4-3 Ultrafast Recovery Diodes ●Surface-Mount VRM V 200 IF (AV) (A) Values in parentheses are for the products with heatsinks 0.9 1.0 1.0 2.0 1.5 1.5 Package Surface-Mount (SFP) Surface-Mount (SFP) Surface-Mount (SJP) Surface-Mount (SFP) Surface-Mount (SJP)

EG01Z

Contextual Info: BL GALAXY ELECTRICAL EG01Y Z -EG01C(Z) VOLTAGE RANGE: 70 - 1000 V CURRENT: 0.5 - 1.0 A HIGH EFFICIENCY RECTIFIER FEATURES DO - 41 Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with freon, alcohol, lsopropand and

alternator rectifier diode 50a

Abstract: EL 14v 4c STA509A equivalent sta509a smd diode marking A05 CTB-34M HALL SENSOR A 22L GENERAL SEMICONDUCTOR MARKING mJ SMA ED TRANSISTOR SMD MARKING CODE 12w Zener diode smd marking code 22h
Contextual Info: Bulletin No C01EA0 Jun., 1999 DEVICES for AUTOMOTIVE CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein