AL01Z Search Results

FMX-G12S

Abstract: FMP-G12S FMPG12S
Contextual Info: ULTRA-FAST-RECOVERY RECTIFIER DIODES Type No. V rm lo If s m V (A) (A) VF Ir Max. @ lF trr (mA) (ns) Type No. V rm lo If s m (V) (A) (A) 1.5 (A) 25 1.0 10nA 50 RG 2Y 70 SFPL-52 200 0.9 SFPL-62 200 1.0 RG 2Z 200 AL01Z 200 1.0 25 0.98 1.0 0.1 50 RG 2 400 1.2

Contextual Info: SIYU R AL01Z 塑封超快速整流二极管 Plastic Ultra-Fast Recover Rectifier 反向电压 200 V 正向电流 1.0 A Reverse Voltage 200V Forward Current 1.0 A 特征 Features •反向漏电流低 Low reverse leakage DO-41 ·正向浪涌承受能力较强 High forward surge capability

AL01Z

Contextual Info: Ultra-Fast-Recovery Rectifier Diodes Electrical Characteristics Ta = 25°C Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) AL01Z 200 1.0 IFSM (A) Tj (°C) Tstg (°C) IR (µA) VF (V) 50Hz Half-cycle Sinewave Single Shot IF (A) max 25 200

RL10Z

Abstract: RL2Z
Contextual Info: ULTRA-FAST-RECOVERY RECTIFIER DIODES Absolute M axim um Ratings Type No. Elee. Char, at 25°C VF ip V rm lo If s m V (A) (A) S FPL-52 200 0.9 25 S FPL-62 200 1.0 AL01Z 200 1.0 25 0.98 1.0 0.1 EL1Z 200 1.5 20 0.98 1.5 Max. @ l F (V) (A) 0.98 1.0 (mA) Type No.

RL2Z

Abstract: RG1C RL3Z fmgg2c EP10C FMXG12 FMG-G26S AG01 AG01A AG01Z
Contextual Info: ULTRA-FAST-RECOVERY RECTIFIER DIODES Type No. V rm lo If s m V (A) (A) VF Ir Max. @ lF trr (mA) (ns) Type No. V rm lo If s m (V) (A) (A) 1.5 (A) 25 1.0 10nA 50 RG 2Y 70 SFPL-52 200 0.9 SFPL-62 200 1.0 RG 2Z 200 AL01Z 200 1.0 25 0.98 1.0 0.1 50 RG 2 400 1.2

diode AL01Z

Contextual Info: AL01Z ULTRA FAST RECOVERY RECTIFIER DIODE PRV : 200 Volts Io : 1.0 Ampere DO - 41 FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency

Contextual Info: Ultra-Fast-Recovery Rectifier Diodes Electrical Characteristics（Ta＝25℃） Absolute Maximum Ratings Parameter Type No. VRM （V） I F（ AV） （A） 200 1.0 AL01Z IFSM （A） Tj Tstg （℃） （℃） 50Hz Half-cycle Sinewave Single Shot 25 200

EG01A V1

Abstract: CTB-34S
Contextual Info: Í SANKEN ELECTRI C U S A h e í I v ì i o ? 1 ! uüonaiä o | Ultra High Speed Rectifier Diodes • V rm:7 0 ~ 1 0 0 0 V ■ io :0 .5 ~ i.5 A T* —i* AG/AL/EGs.,«/EL/RG Absolute Maximum Rating Type No. AG01Y AG01Z AG01 AG01A AL01Y AL01Z EG01Y EG01Z EG01

AL01Z

Abstract: diode al01
Contextual Info: SANKEN ELECTRIC CO., LTD. AL01Z 1. Scope The present specifications shall apply to Sanken silicon rectifier diode, AL01Z. 2. Outline Type Silicon Rectifier Diode Planar type Structure Resin Molded Applications High Frequency Rectification, etc. 3. Flammability

MN638S

Abstract: STA464C sk 3001s relay Re 04501 spf0001 sta509a Schottky Diode 80V 6A 2SD2633 sk 5151s SLA2403M
Contextual Info: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein

AG01Y

Abstract: AL01Z AG01A AG01 AG01Z EG01Y EG01Z SPX-62S SPX-G32S
Contextual Info: Part Number IFSM A Tj (°C) 50Hz IF V = V V = V R RM R RM (A) max max t rr IF / I FP (mA) 2 (ns) IF / I FP (mA) Rth (j- ) Mass Fig. (°C/W) (g) No. 1.0 25 –40 to +150 1.2 1.0 100 0.5 100 100 100/100 50 100/200 22 0.13 1.0 30 –40 to +150 1.2 1.0 100 0.5

FMPG2F

Abstract: marking RBV - 401 3f series surface mount transistor FMXA-2202S RBV-406M SJPM-H4 FMV-3HU DIODE diode eu02 rectifier rbv-606 marking RBV
Contextual Info: Diodes 4 ○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○ Taping Specifications . 176 Application Note . 179

3000PJA10

Abstract: 1600GXD21 3500PJA40 1603PJA300 1500PJLA20 1500PJLA40 3000PJA10 F 3500PJA10 TT 46 N 1600 1600EXD24
Contextual Info: 1500PJLA10 1500PJLA20 1500PJLA30 1500PJLA40 1600BXD24 o o o o o o o o o o . O ^ N O) ik 1600FD26 1600FXD24 1600GXD21 1603PJA250 I603PJA300 V V V V V 300QBD21 3000EXD21 3000PJA10 3000PJLA10 3000PJLA20 V V V V V H3EDIDII1ED m n n n i i i i ÿ ÿ ÿ ÿ ÿ '•*

AG01A

Abstract: fml-g16s EG01A FMC-26U FMD-G26S FMG-G26S FMG-G36S FMN-G16S FMX-G16S FMX-G26S
Contextual Info: VRM V Package Part Number Surface Mount MP3-306 Axial 600 Frame-2Pin IFSM (A) 50Hz Half-cycle Sinewave Single Shot Tj (°C) Tstg (°C) VF (V) max IR (µA) IR (H) (mA) IF V = V V = V R RM R RM (A) max max t rr Ta (°C) 1 2 : I F / I R (=I F) 90% Recovery Point

Ao6100

Contextual Info: SAN KEN E L E C T R IC CO L T » 35 E Ultra Fast Recovery Diodes 1 H h T IR O T M l .0 0 0 0 4 1 3 T B S A K J T p & J -o V Vrm: 70~1000V B io :0.4~5.0A '¿7' SFPL/AG/AL/EG/EL/RG/RL Rating/ Characteristics Absolute Maximum Ratings V rsm V) V rm (V) If s M

SJPL

Contextual Info: 4-3 Ultrafast Recovery Diodes ●Surface-Mount VRM V 200 IF (AV) (A) Values in parentheses are for the products with heatsinks 0.9 1.0 1.0 2.0 1.5 1.5 Package Surface-Mount (SFP) Surface-Mount (SFP) Surface-Mount (SJP) Surface-Mount (SFP) Surface-Mount (SJP)

STR W6251

Abstract: STRW6251 W6251 STRW-6251 smps circuit using str w6251 STR-w6251 STR-W62 smps schematic strw6251 ac cdi schematic diagram str-w6200
Contextual Info: Product Information Series STR-W6200D PWM Off-line Switching Regulators Introduction The STR-W6200D series are current-mode PWM ICs that incorporate controller chips, made by a high-voltage proprietary BCD process, and avalanche-guaranteed MOSFETs. These elements allow power supply systems designs

STR W6251

Abstract: STRW6251 W6251 STRW-6251 STR-w6251 smps schematic strw6251 STRW6200 smps circuit using str w6251 STRW625 str-w6200
Contextual Info: Product Information Series STR-W6200D PWM Off-line Switching Regulators INTRODUCTION The STR-W6200D series are current-mode PWM ICs that incorporate controller chips, made by a high-voltage proprietary BCD process, and avalanche-guaranteed MOSFETs. These elements allow power supply systems designs

AG01Z

Abstract: AL01Z EG01Z EN01Z MP2-202S MPL-102S SFPL-52 SFPL-62 SFPX-62 SPX-62S
Contextual Info: VRM V Package Part Number I F (AV) (A) IFSM (A) 50Hz Half-cycle Sinewave Single Shot Tj (°C) Tstg (°C) VF (V) max IR (µA) IR (H) (mA) IF V = V V = V R RM R RM (A) max max t rr Ta (°C) t rr 1 t rr 2 : I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point)

FMXG12

Abstract: FMX4202S fmng12 FML4202S FMXA2202S sjpl-d2 FMXA-2202S FMX-4202S SJPX-F2 FMXS-4202
Contextual Info: 4-3 Ultrafast Recovery Diodes ●Surface-Mount 1.0 1.5 2.0 Surface-Mount SJP Surface-Mount (SJP) Surface-Mount (SJP) SJPL-D2 SJPX-F2 3.0 3.0 Surface-Mount (SJP) Surface-Mount (D pack) SJPL-L2 SPX-G32S SPX-62S 60 80 -40 to +150 -40 to +150 0.98 0.98 trrq

rl2z

Abstract: E83S FMP-G12S 1Z200 marking ag01 AG01 AG01A AG01Y AG01Z EG01
Contextual Info: SANKEN E L E C T R IC CO LT » 35E 1 H T IR O T M l .0 0 0 0 4 1 3 T B S A K J T p & J -o V Ultra Fast Recovery Diodes h Vrm:70~1000V Bio:0.4~5.0A '¿7' SFPL/AG/AL/EG/EL/RG/RL R ating/ Characteristics Absolute Maximum Ratings Vrsm V) V rm (V) SFPL-52 SFPL-62

diode 8603

Abstract: SOT23 1Z FMV-3HU RM2C RN4Z General FBT UX-F5B 3gu diode diode RBV-406M Part marking
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41

STR-H2003

Abstract: STR-H2022 Sanken STR-H2022 STR-H2005 SEC165P2-24 seb80n2 led HG 740 nm STRH2022 SEB80N2-24 SEB100P2
Contextual Info: より明るく薄く、高効率に サンケン の ディスプレイ トータル ~CCFL（冷陰極蛍光放電管）からデバイス、 インバータ、電源モジュールまで∼ より大きく、明るく、そして鮮やかに、と日々進化するＴＶやモニタなどの液晶ディス

10zrl

Contextual Info: VRM V Package Part Number I F (AV) (A) IFSM (A) 50Hz Half-cycle Sinewave Single Shot Tj (°C) Tstg (°C) VF (V) max IR (µA) IR (H) (mA) IF V = V V = V R RM R RM (A) max max t rr Ta (°C) t rr 1 t rr 2 : I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point)