FMXG12 Search Results

FMX-G12S

Abstract: FMP-G12S FMPG12S
Contextual Info: ULTRA-FAST-RECOVERY RECTIFIER DIODES Type No. V rm lo If s m V (A) (A) VF Ir Max. @ lF trr (mA) (ns) Type No. V rm lo If s m (V) (A) (A) 1.5 (A) 25 1.0 10nA 50 RG 2Y 70 SFPL-52 200 0.9 SFPL-62 200 1.0 RG 2Z 200 AL01Z 200 1.0 25 0.98 1.0 0.1 50 RG 2 400 1.2

FMPG2F

Abstract: marking RBV - 401 3f series surface mount transistor FMXA-2202S RBV-406M SJPM-H4 FMV-3HU DIODE diode eu02 rectifier rbv-606 marking RBV
Contextual Info: Diodes 4 ○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○ Taping Specifications . 176 Application Note . 179

GM-3A

Abstract: GU-1F GH-1E FML-G14S FML-G16S FML-G22S FMP-G12S FMX-G12S GFB30B GFB30C
Contextual Info: - 66 AË B £ FML-G13S FML-G14S FML-G 1 6 S FML-G22S FMP-G 1 2 S FMP-G 3 F S FMP-G15FS FMX-G12S GFB30B GF B 3 0 C * * * GFB30E * GF B 3 0 G * GF D I O B * GF D I O C * GFDIOE a « y >r y ^ y*r y y >r y y *T y -tf- y *r y < fy> r y Vr s m V k r :m Vr IFM V

FMPG3F

Abstract: FMP-G3FS GH-1E FML-G14S FML-G16S FML-G22S FMP-G12S FMX-G12S GFB30B GFB30C
Contextual Info: - 66 AË B £ FML-G13S FML-G14S FML-G 1 6 S FML-G22S FMP-G 1 2 S * * * * * * * FMP-G 3 F S FMP-G15FS FMX-G12S GFB30B GF B 3 0 C GFB30E GF B 3 0 G GF D I O B GF D I O C GFDIOE a « y >r y ^ y*r y y >r y y *T y -tf- y *r y < fy> r y Vr s m V k r :m Vr IFM V

gu 81

Abstract: GM-3A GFB30B GFB30C GH-1E FML-G14S FML-G16S FML-G22S FMP-G12S FMX-G12S
Contextual Info: - 66 AË B £ FML-G13S FML-G14S FML-G 1 6 S FML-G22S FMP-G 1 2 S * * FMP-G 3 F S FMP-G15FS FMX-G12S GFB30B GF B 3 0 C GFB30E GF B 3 0 G GF D I O B * GF D I O C * GFDIOE a « y ^ y*r y y >r y y *T y -tf- y *r y < fy> r y = .& * * =m * * * * GFDIOG G H -IE G H -1F

SJPL

Contextual Info: 4-3 Ultrafast Recovery Diodes ●Surface-Mount VRM V 200 IF (AV) (A) Values in parentheses are for the products with heatsinks 0.9 1.0 1.0 2.0 1.5 1.5 Package Surface-Mount (SFP) Surface-Mount (SFP) Surface-Mount (SJP) Surface-Mount (SFP) Surface-Mount (SJP)

AG01Z

Abstract: AL01Z EG01Z EN01Z MP2-202S MPL-102S SFPL-52 SFPL-62 SFPX-62 SPX-62S
Contextual Info: VRM V Package Part Number I F (AV) (A) IFSM (A) 50Hz Half-cycle Sinewave Single Shot Tj (°C) Tstg (°C) VF (V) max IR (µA) IR (H) (mA) IF V = V V = V R RM R RM (A) max max t rr Ta (°C) t rr 1 t rr 2 : I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point)

FMXG12

Abstract: FMX4202S fmng12 FML4202S FMXA2202S sjpl-d2 FMXA-2202S FMX-4202S SJPX-F2 FMXS-4202
Contextual Info: 4-3 Ultrafast Recovery Diodes ●Surface-Mount 1.0 1.5 2.0 Surface-Mount SJP Surface-Mount (SJP) Surface-Mount (SJP) SJPL-D2 SJPX-F2 3.0 3.0 Surface-Mount (SJP) Surface-Mount (D pack) SJPL-L2 SPX-G32S SPX-62S 60 80 -40 to +150 -40 to +150 0.98 0.98 trrq

diode 8603

Abstract: SOT23 1Z FMV-3HU RM2C RN4Z General FBT UX-F5B 3gu diode diode RBV-406M Part marking
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

STR-H2003

Abstract: STR-H2022 Sanken STR-H2022 STR-H2005 SEC165P2-24 seb80n2 led HG 740 nm STRH2022 SEB80N2-24 SEB100P2
Contextual Info: より明るく薄く、高効率に サンケン の ディスプレイ トータル ~CCFL（冷陰極蛍光放電管）からデバイス、 インバータ、電源モジュールまで∼ より大きく、明るく、そして鮮やかに、と日々進化するＴＶやモニタなどの液晶ディス

10zrl

Contextual Info: VRM V Package Part Number I F (AV) (A) IFSM (A) 50Hz Half-cycle Sinewave Single Shot Tj (°C) Tstg (°C) VF (V) max IR (µA) IR (H) (mA) IF V = V V = V R RM R RM (A) max max t rr Ta (°C) t rr 1 t rr 2 : I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point)

1106S

Contextual Info: 4-3 Ultrafast Recovery Diodes ●Surface-Mount VRM V 200 IF (AV) (A) Values in parentheses are for the products with heatsinks 0.9 1.0 1.0 2.0 1.5 1.5 Package Surface-Mount (SFP) Surface-Mount (SFP) Surface-Mount (SJP) Surface-Mount (SFP) Surface-Mount (SJP)

Contextual Info: 4-3 Ultrafast Recovery Diodes ●Surface-Mount 1.0 1.5 2.0 Surface-Mount SJP Surface-Mount (SJP) Surface-Mount (SJP) SJPL-D2 SJPX-F2 3.0 3.0 Surface-Mount (SJP) Surface-Mount (D pack) SJPL-L2 SPX-G32S SPX-62S 60 80 -40 to +150 -40 to +150 0.98 0.98 IR(H)

B 2306 BARRIER RECTIFIER

Abstract: diode RU 3B FMQ2FU RBV-406 UX-F5B w 2206 schottky fmv -30j EZ0150 fmu 22 u FMP-3FU
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41

Contextual Info: FMX-G12S SANKEN ELECTRIC CO., LTD. 1. Scope The present specifications shall apply to an FMX-G12S 2. Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification Flammability : UL94V-0 Equivalent 3. Absolute maximum ratings

SK 18752

Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
Contextual Info: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,

AG01Z

Abstract: AL01Z EG01Z EL02Z EN01Z FML-G12S SFPL-52 SFPL-62 SFPX-62 SPX-62S
Contextual Info: VRM V Package Part Number I F (AV) (A) IFSM (A) 50Hz Half-cycle Sinewave Single Shot Tstg (°C) VF (V) max IR (µA) IR (H) (mA) IF V = V V = V R RM R RM (A) max max t rr Ta (°C) 1 t rr 2 : I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point)

Contextual Info: Index Type No. order Type No. Division Page AG01 Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01A Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01Y Ultra-Fast-Recovery Rectifier Diodes (Axial) AG01Z AK 03 Division Page Division Page EK 19 Schottky Barrier Diodes (Axial)

FMX-12S

Abstract: RBA-402L FMPG12
Contextual Info: 5-3. Ultra-Fast Recovery Rectifier Diodes Surface Mount Type Type No. VRM V IF (AV) (A) SFPL-52 0.9 -62 1.0 SPX-G32S 200 -62S* I FSM Tj (A) (Ta = 25°C) Tstg VF (V) IR (µA) max per max per element element (°C) trr1 (ns) trr2 (ns) max max 50 35 Fig. No.

UX-F5B

Abstract: UX-F5B diode RG-2A Diode shv-30j FMQ2FU axial package fmp2fur
Contextual Info: Selection Guide Rectifier Diodes ●1 in one-package VRM V 100 IF (A) I FSM (A) 1.0 45 3.0 200 0.9 30 45 35 1.0 45 45 200 50 1.2 100 80 1.5 120 3.0 200 0.9 30 45 50 1.0 35 45 45 400 50 80 1.2 150 100 80 2.5 150 3.0 200 35 1.0 45 45 50 80 600 150 1.2 100

SE012

Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

FMPG2F

Abstract: zener diode reference guide diode MARKING 30J MICROWAVE OVEN HIGH VOLTAGE RECTIFIER DIODE - HVR diode hvr 1x FMB-34M sot23 3F mark fmlg12 RBV SOT23 marking code RBV SOT23
Contextual Info: Bulletin No. D01ED0 Oct., 2000 SI LICON DIODES SILICON VARISTORS CAUTION / WARNING The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Sanken reserves the right to make changes without further notice to any products herein in

GFB30B

Abstract: HP1A FMPG3F fml-g16s GH-1E FML-G14S FML-G22S FMP-G12S FMX-G12S GFB30C
Contextual Info: - 66 - AË B £ FML-G13S FML-G14S FML-G 1 6 S FML-G22S FMP-G 1 2 S FMP-G 3 F S FMP-G15FS FMX-G12S GFB30B GF B 3 0 C * * * GFB30E * GF B 3 0 G * GF D I O B * GF D I O C * GFDIOE a « y >r y ^ y*r y y >r y y *T y -tf- y *r y < fy> r y Vr s m V k r :m Vr IFM