640M Search Results

GDF576

Contextual Info: EURO QUARTZ GDF576 LVDS VCXO 7 x 5 x 1.8mm SMD VCXO Frequency range 38MHz to 640MHz LVDS Output Supply Voltage 3.3 VDC Phase jitter 0.4ps typical Pull range from ±30ppm to ±150ppm DESCRIPTION GDF576 VCXOs are packaged in a 6 pad 7mm x 5mm SMD package. Typical phase jitter for GDF series VCXOs is 0.4 ps. Output is LVDS.

CBC2012T2R2M

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CBC2012T2R2M Features Item Summary 2.2 H(±20%), 530mA, 640mA, 0805 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 3000pcs Products characteristics table External Dimensions

crystal 20Mhz

Abstract: 20MHz Crystal PL580-68OC PL580-68OCL PL580-68OC-R
Contextual Info: Preliminary PL580-68/69 320-640MHz Low Phase Noise VCXO FEATURES 1 16 SEL0^ XIN 2 15 SEL1^ XOUT 3 14 GNDBUF SEL2^ 4 13 QBAR OE_CTRL 5 12 VDDBUF VCON 6 11 Q GNDANA 7 10 GNDBUF LP 8 9 LM 8 GNDBUF 7 QBAR 6 VDDBUF 5 Q OE_CTRL 15 VCON 16 9 PL580-6X 1 2 3 4 GNDBUF

Contextual Info: VFH240C Series XO Hi-Rel/COTS 5x7mm SMD, 2.5V, 3.3V LVPECL / LVDS Features           RoHS Status 9.5MHz to 640MHz frequency range Low <0.5ps RMS jitter over 12kHz-20MHz LVPECL or LVDS output with tristate SMD package 5x7 mm

Frequency multiplier 1mHz 100MHz

Contextual Info: EURO QUARTZ HPF8 LVPECL OSCILLATORS 8 pin Dual-in-Line DESCRIPTION HPF8 series LVPECL output oscillators cover the frequency range 38MHz to 640MHz. The part contains a high 'Q' fundamental crystal and utilizes a low jitter multiplier circuit. SPECIFICATION

2N7002K

Abstract: RG33
Contextual Info: 2N7002K N-Channel Enhancement Mode Power MOSFET 3 DRAIN P b Lead Pb -Free 1 GATE DRAIN CURRENT 640m AMPERES DRAIN SOURCE VOLTAGE 60 VOLTAGE * * Gate Pretection Diode SOURCE 2 Description: The 2N7002K utilized advanced processing techniques to achieve the lowest possible on-resistance,

G138K

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/04/27 REVISED DATE :2005/07/14B G138K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID 50V 2 640mA Description The G138K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely

GS138K

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/10/11 REVISED DATE : GS138K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID 50V 2 640mA Description The GS138K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely

G3018K

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/11/11 REVISED DATE : G3018K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID 30V 8 640mA Description The G3018K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely

G111K

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/04/27 REVISED DATE :2005/07/14B G 111 K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID 55V 2 640mA Description The G111K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely

2N7002K

Contextual Info: 2N7002K N-Channel Enhancement Mode Power MOSFET P b Lead Pb -Free 3 DRAIN 1 GATE * * Gate Pretection Diode Description: DRAIN CURRENT 640m AMPERES DRAIN SOURCE VOLTAGE 60 VOLTAGE SOURCE 2 The 2N7002K utilized advanced processing techniques to achieve the lowest possible on-resistance,

j569

Abstract: 1090MHz balun 1090Mhz LNA circuit for a signal blocker 1090mhz filter LTC5540 LTC5541 LTC5543 j182 LTC5542
Contextual Info: LTC5540 600MHz to 1.3GHz High Dynamic Range Downconverting Mixer Description Features n n n n n n n n n n n n n n Conversion Gain: 7.9dB at 900MHz IIP3: 25.9dBm at 900MHz Noise Figure: 9.9dB at 900MHz 16.2dB NF Under +5dBm Blocking High Input P1dB 3.3V Supply, 640mW Power Consumption

G301K

Contextual Info: Pb Free Plating Product ISSUED DATE :2006/01/19 REVISED DATE : G301K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID 30V 1 640mA Description The G301K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely

ABV8068

Abstract: ABV8068OC ABV8068OC-T ABV8069
Contextual Info: Preliminary ABV8068/69 320-640MHz Low Phase Noise VCXO FEATURES 1 16 SEL0^ XIN 2 15 SEL1^ XOUT 3 14 GNDBUF SEL2^ 4 13 QBAR OE_CTRL 5 12 VDDBUF VCON 6 11 Q GNDANA 7 10 GNDBUF LP 8 9 LM ABV806X The ABV806X is a monolithic low jitter and low phase noise VCXO, capable of 0.4ps RMS phase

Contextual Info: MAX805SMJA Linear ICs Battery/Power Supply Monitor Circuit status Military/High-RelN Output Voltage Nominal V Load Current Max. (A) Drop-Out Volt Max. P(D) Max. (W)640m Nom. Supp (V)3.3 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)125 Package StyleDIP

Contextual Info: MAX802RMJA Linear ICs Battery/Power Supply Monitor Circuit status Military/High-RelN Output Voltage Nominal V Load Current Max. (A) Drop-Out Volt Max. P(D) Max. (W)640m Nom. Supp (V)3 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)125 Package StyleDIP

Contextual Info: MAX806RMJA Linear ICs Battery/Power Supply Monitor Circuit status Military/High-RelN Output Voltage Nominal V Load Current Max. (A) Drop-Out Volt Max. P(D) Max. (W)640m Nom. Supp (V)3 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)125 Package StyleDIP

Contextual Info: LT1013MJ8 Linear ICs Dual General Purpose Op Amp status Military/High-RelN Input Bias Current Max. A 45n Unity Gain BW (Hz) V(io) Max. (V)550u I(io) Max. (A)5.0n Com Mode Inp Range (VICR)28.5 Input Resistance Typ. (Ohms)4GÂ Temp Coef. of VIO2.5u P(D) Max. (W)640m

Contextual Info: MAX861MJA Linear ICs dc-to-dc/Charge Pump Voltage Converter status Military/High-RelN Output Voltage Nominal V 10 Load Current Max. (A)60m Drop-Out Volt Max. P(D) Max. (W)640m Nom. Supp (V)5 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)125

Contextual Info: MAX690RMJA Linear ICs Battery/Power Supply Monitor Circuit status Military/High-RelN Output Voltage Nominal V Load Current Max. (A) Drop-Out Volt Max. P(D) Max. (W)640m Nom. Supp (V)3 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)125 Package StyleDIP

Contextual Info: MAX806SMJA Linear ICs Battery/Power Supply Monitor Circuit status Military/High-RelN Output Voltage Nominal V Load Current Max. (A) Drop-Out Volt Max. P(D) Max. (W)640m Nom. Supp (V)3.3 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)125 Package StyleDIP

Contextual Info: LM358D Linear ICs Dual General Purpose Op Amp status Military/High-RelN Input Bias Current Max. A 250n Unity Gain BW (Hz)1.0M V(io) Max. (V)7.0m I(io) Max. (A)150n Com Mode Inp Range (VICR)30 Input Resistance Typ. (Ohms) Temp Coef. of VIO7.0u P(D) Max. (W)640m

Contextual Info: MAX804SMJA Linear ICs Battery/Power Supply Monitor Circuit status Military/High-RelN Output Voltage Nominal V Load Current Max. (A) Drop-Out Volt Max. P(D) Max. (W)640m Nom. Supp (V)3.3 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)125 Package StyleDIP

Contextual Info: LT1013AMJ8 Linear ICs Dual General Purpose Op Amp status Military/High-RelN Input Bias Current Max. A 30n Unity Gain BW (Hz) V(io) Max. (V)300u I(io) Max. (A)2.5n Com Mode Inp Range (VICR)28.5 Input Resistance Typ. (Ohms)5GÂ Temp Coef. of VIO2.0u P(D) Max. (W)640m