AK0260
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AK Semiconductor
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AK0260 N-Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 60A continuous drain current, and 32mΩ maximum RDS(ON) at 10V gate-source voltage, featuring advanced trench technology for low gate charge and high switching efficiency. |
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AK0202ZA
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AK Semiconductor
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N-Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 2A continuous drain current, 580mΩ typical RDS(ON) at 10V VGS, and low gate charge for high-frequency switching applications. |
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AK0260T
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AK Semiconductor
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N-Channel Enhancement Mode Power MOSFET AK0260T with 200V drain-source voltage, 60A continuous drain current, and 32mΩ RDS(ON) at 10V VGS, featuring high cell density design, low gate charge, and TO-247 package for efficient power switching applications. |
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AK0202Z
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AK Semiconductor
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AK0202Z N-Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 2A continuous drain current, 580mΩ RDS(ON) at 10V VGS, and low gate charge for power switching applications. |
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AK0224D
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AK Semiconductor
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AK0224D N-Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 24A continuous drain current, and 64mΩ typical RDS(ON) at 10V VGS, utilizing trench technology for low gate charge and high efficiency in power switching applications. |
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AK0275T
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AK Semiconductor
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AK0275T N-Channel Enhancement Mode Power MOSFET with 200V VDSS, 75A ID, and RDS(ON) less than 20mΩ at VGS=10V, featuring high EAS, low gate charge, and 100% UIS and ΔVds tested. |
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AK0205IA
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AK Semiconductor
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N-Channel Enhancement Mode Power MOSFET AK0205IA with 200V drain-source voltage, 5A continuous drain current, RDS(ON) less than 580mΩ at VGS=10V, and low gate charge for high efficiency switching applications. |
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AK0224AF
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AK Semiconductor
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AK0224AF N-Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 24A continuous drain current, 80mΩ maximum RDS(ON) at 10V VGS, and 45W power dissipation in TO-220F package. |
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AK0218
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AK Semiconductor
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AK0218 N-Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 18A continuous drain current, and 64mΩ typical RDS(ON) at 10V VGS, featuring advanced trench technology for low gate charge and high switching efficiency. |
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AK02H10T
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AK Semiconductor
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N-Channel Enhancement Mode Power MOSFET AK02H10T with 200V drain-source voltage, 100A continuous drain current, 18mΩ RDS(ON) at 10V VGS, and TO-247 package for high-frequency switching applications. |
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AK0224A
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AK Semiconductor
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AK0224A N-Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 24A continuous drain current, and 80mΩ typical RDS(ON) at 10V VGS, featuring high cell density design and optimized for switching applications. |
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AK0275
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AK Semiconductor
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200V, 75A N-Channel Enhancement Mode Power MOSFET with RDS(ON) less than 20mΩ at VGS=10V, featuring high EAS, low gate charge, and 100% UIS and ΔVds tested for automotive and high-frequency applications. |
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AK0224
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AK Semiconductor
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AK0224 N-Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 24A continuous drain current, 80mΩ typical RDS(ON) at 10V VGS, advanced trench technology, low gate charge, and high ESD capability. |
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AK0208IA
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AK Semiconductor
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N-channel enhancement mode power MOSFET with 200V drain-source voltage, 8A continuous drain current, 260mΩ typical RDS(ON) at 10V VGS, and low gate charge, suitable for high-frequency switching applications. |
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AK0203S
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AK Semiconductor
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N-Channel Enhancement Mode Power MOSFET AK0203S with 200V drain-source voltage, 3.9A continuous drain current, and low RDS(ON) of 56mΩ typical at 10V gate-source voltage, suitable for high-frequency switching applications. |
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AK0260P
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AK Semiconductor
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AK0260P N-Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 60A continuous drain current, 32mΩ RDS(ON) at VGS=10V, and advanced trench technology for low gate charge and high switching performance. |
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AK0202M
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AK Semiconductor
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AK0202M N-Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 2A continuous drain current, RDS(ON) less than 580mΩ at VGS=10V, and low gate charge for high efficiency switching applications. |
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AK0240
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AK Semiconductor
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AK0240 N-Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 40A continuous drain current, RDS(ON) less than 41mΩ at VGS=10V, and advanced trench technology for low gate charge and high switching performance. |
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AK0224DA
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AK Semiconductor
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AK0224DA N-Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 24A continuous drain current, and 62mΩ typical RDS(ON) at 10V VGS, suitable for high-frequency switching applications. |
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AK0250D
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AK Semiconductor
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AK0250D N-Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 50A continuous drain current, 40mΩ max RDS(ON) at 10V VGS, and 270W power dissipation in TO-263-2L package. |
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AK0260
